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1. 发明申请

US20070034853A1 Structures for reducing operating voltage in a semiconductor device 失效
标题翻译：用于降低半导体器件中的工作电压的结构
公开(公告)号：US20070034853A1
公开(公告)日：2007-02-15
申请号：US11203917
申请日：2005-08-15
申请人： Virginia Robbins , Steven Lester , Jeffrey Miller , David Bour
发明人： Virginia Robbins , Steven Lester , Jeffrey Miller , David Bour
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01S5/305
摘要： A light-emitting device comprises an active region configured to generate light in response to injected charge, and an n-type material layer and a p-type material layer, wherein at least one of the n-type material layer and the p-type material layer is doped with at least two dopants, at least one of the dopants having an ionization energy higher than the ionization energy level of the other dopant.
摘要翻译：发光装置包括响应于注入的电荷而被配置为产生光的有源区，以及n型材料层和p型材料层，其中n型材料层和p型材料层中的至少一种材料层掺杂有至少两种掺杂剂，所述掺杂剂中的至少一种具有高于另一种掺杂剂的电离能级的电离能。

2. 发明申请

US20070069380A1 Ohmic contact on p-type GaN 失效
标题翻译： p型GaN上的欧姆接触
公开(公告)号：US20070069380A1
公开(公告)日：2007-03-29
申请号：US11234993
申请日：2005-09-26
申请人： Jeffrey Miller , David Bour , Virginia Robbins , Steven Lester
发明人： Jeffrey Miller , David Bour , Virginia Robbins , Steven Lester
IPC分类号： H01L23/48
CPC分类号： H01L21/28575 , H01L33/14 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.
摘要翻译：根据本发明的欧姆接触包括一层p型GaN基材料。 II-VI族化合物半导体的第一层位于邻近p型GaN基材料层的位置。欧姆接触还包括提供金属接触的金属层。不同的II-VI化合物半导体的第二层位于金属层附近。

3. 发明申请

US20070029555A1 Edge-emitting LED light source 审中-公开
标题翻译：边缘发光LED光源
公开(公告)号：US20070029555A1
公开(公告)日：2007-02-08
申请号：US11197010
申请日：2005-08-04
申请人： Steven Lester , Virginia Robbins , Jeffrey Miller , Scott Corzine
发明人： Steven Lester , Virginia Robbins , Jeffrey Miller , Scott Corzine
IPC分类号： H01L33/00
CPC分类号： H01L25/0756 , H01L25/075 , H01L33/02 , H01L33/08 , H01L33/64 , H01L2924/0002 , H01L2924/00
摘要： Edge-emitting LED light source, and method for fabricating an edge-emitting LED light source. The edge-emitting LED light source has a plurality of edge-emitting LEDs arranged in close proximity to one another to define an array of edge-emitting LEDs. Light beams separately emitted by each of the plurality of edge-emitting LEDs in the array together form a single light beam that has a generally two-dimensional cross-sectional shape, for example, a square or other rectangular shape, and an increased overall light flux.
摘要翻译：边缘发光LED光源，以及制造边缘发光LED光源的方法。边缘发射LED光源具有彼此靠近布置的多个边缘发射LED，以限定边缘发射LED的阵列。阵列中的多个边缘发光LED中的每一个单独发射的光束一起形成具有大致二维横截面形状的单个光束，例如正方形或其它矩形形状，以及增加的整体光线助焊剂

4. 发明申请

US20070069228A1 Edge-emitting LED assembly 有权
标题翻译：边缘发光LED组件
公开(公告)号：US20070069228A1
公开(公告)日：2007-03-29
申请号：US11235592
申请日：2005-09-26
申请人： Jeffrey Miller , Steven Lester , Virginia Robbins
发明人： Jeffrey Miller , Steven Lester , Virginia Robbins
IPC分类号： H01L33/00
CPC分类号： H01L33/46
摘要： A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.
摘要翻译：根据本发明的发光二极管（LED）包括具有发射光的外部发射表面的边缘发射LED堆叠以及与LED堆叠的至少一个外表面相邻的反射元件比外部发光面。反射元件接收在LED堆叠内产生的光并将接收的光反射回LED堆叠。反射光的至少一部分然后从外部发射表面发射。

5. 发明申请

US20070019699A1 Light emitting device and method of manufacture 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20070019699A1
公开(公告)日：2007-01-25
申请号：US11187469
申请日：2005-07-22
申请人： Virginia Robbins , Steven Lester
发明人： Virginia Robbins , Steven Lester
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： H01S5/32341 , H01L33/0079 , H01L33/465 , H01S5/0216 , H01S5/0217 , H01S5/18388 , H01S2304/04
摘要： A light emitting device is manufactured by forming a light emitting structure upon a buffer layer formed on a substrate. The light emitting structure is then separated from the buffer layer and the substrate. A light-directing element such as a mirror or a lens is then attached to the light emitting structure using a bonding agent.
摘要翻译：通过在形成在基板上的缓冲层上形成发光结构来制造发光器件。然后将发光结构与缓冲层和基板分离。然后使用粘合剂将诸如反射镜或透镜的导光元件附接到发光结构。

6. 发明申请

US20070278622A1 Gallium Nitride Device Substrate Contaning A Lattice Parameter Altering Element 有权
标题翻译：氮化镓装置基板，用于布置晶格参数改变元件
公开(公告)号：US20070278622A1
公开(公告)日：2007-12-06
申请号：US11838467
申请日：2007-08-14
申请人： Steven Lester , Virginia Robbins , Scott Corzine
发明人： Steven Lester , Virginia Robbins , Scott Corzine
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/2007 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/007 , H01L33/0079
摘要： A gallium nitride device substrate comprises a layer of gallium nitride containing an additional lattice parameter altering element located over a substitute substrate.
摘要翻译：氮化镓器件衬底包括含有位于替代衬底上的附加晶格参数改变元件的氮化镓层。

7. 发明申请

US20070032041A1 Gallium nitride device substrate containing a lattice parameter altering element 有权
标题翻译：含有晶格参数改变元件的氮化镓器件衬底
公开(公告)号：US20070032041A1
公开(公告)日：2007-02-08
申请号：US11194237
申请日：2005-08-01
申请人： Steven Lester , Virginia Robbins , Scott Corzine
发明人： Steven Lester , Virginia Robbins , Scott Corzine
IPC分类号： H01L21/30 , H01L21/00
CPC分类号： H01L21/2007 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/007 , H01L33/0079
摘要： A gallium nitride device substrate comprises a layer of gallium nitride containing an additional lattice parameter altering element located over a substitute substrate.
摘要翻译：氮化镓器件衬底包括含有位于替代衬底上的附加晶格参数改变元件的氮化镓层。

8. 发明申请

US20060262243A1 Display system and method using a solid state laser 审中-公开
标题翻译：显示系统和使用固态激光的方法
公开(公告)号：US20060262243A1
公开(公告)日：2006-11-23
申请号：US11132943
申请日：2005-05-19
申请人： Steven Lester , David Bour , Scott Corzine
发明人： Steven Lester , David Bour , Scott Corzine
IPC分类号： G02F1/1335
CPC分类号： G02F2/02 , G02B26/101 , G09G3/02 , G09G3/3406 , G09G3/342 , G09G3/3611 , G09G2310/0224 , H04N9/3129 , H04N9/3141
摘要： A display system in accordance with the present invention includes a display screen having a phosphor that emits light in a wavelength range from about 450 nm to about 650 nm when excited by a laser beam. The laser beam is generated by a solid-state laser having an operating wavelength range from about 330 nm to about 440 nm.
摘要翻译：根据本发明的显示系统包括具有荧光体的显示屏，该荧光体当被激光束激发时发射在约450nm至约650nm的波长范围内的光。激光束由具有约330nm至约440nm的工作波长范围的固态激光器产生。

9. 发明申请

US20070030690A1 Laser light source adapted for LCD back-lit displays 有权
标题翻译：适用于LCD背光显示的激光光源
公开(公告)号：US20070030690A1
公开(公告)日：2007-02-08
申请号：US11198474
申请日：2005-08-04
申请人： Steven Lester
发明人： Steven Lester
IPC分类号： G02B6/04
CPC分类号： G02F1/133615 , G02F1/133603 , G02F1/133621 , G02F2201/02
摘要： A light source and a display utilizing the same are disclosed. The light source includes a laser, a light pipe, and an optical fiber. The light pipe includes a layer of transparent material having a top surface, a bottom surface, and a first edge. The first optical fiber couples light from the laser to the first edge at a first location. The light is injected into the light pipe such that the light is reflected from the top surface and the light pipe includes a plurality of scattering centers that scatter the light through the top surface. The laser can be in thermal contact with a heat sink placed at a location that is adapted for dissipating heat. The light source can include a plurality of lasers in a color display. The light from the various lasers can be mixed before it reaches the light pipe or in the light pipe.
摘要翻译：公开了一种光源和使用该光源的显示器。光源包括激光器，光管和光纤。光管包括具有顶表面，底表面和第一边缘的透明材料层。第一光纤在第一位置将来自激光器的光耦合到第一边缘。光被注入到光管中，使得光从顶表面反射，并且光管包括使光通过顶表面散射的多个散射中心。激光器可以与放置在适于散热的位置处的散热器热接触。光源可以包括彩色显示器中的多个激光器。来自各种激光器的光可以在到达光管或光管之前混合。

10. 发明申请

US20110121357A1 LED with Improved Injection Efficiency 有权
标题翻译： LED提高注射效率
公开(公告)号：US20110121357A1
公开(公告)日：2011-05-26
申请号：US12626474
申请日：2009-11-25
申请人： Steven Lester , Jeff Ramer , Jun Wu , Ling Zhang
发明人： Steven Lester , Jeff Ramer , Jun Wu , Ling Zhang
IPC分类号： H01L33/30 , H01L21/20 , H01L21/302
CPC分类号： H01L33/22 , H01L21/0237 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/0004 , H01L33/007 , H01L33/025 , H01L33/06 , H01L33/20 , H01L33/32
摘要： A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits light when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括夹在p型半导体层和n型半导体层之间的有源层。当来自p型半导体层的孔与其中的n型半导体层的电子结合时，有源层发光。有源层包括多个子层，并且具有多个凹坑，其中多个子层的侧表面与p型半导体材料接触，使得来自p型半导体材料的孔为通过暴露的侧表面注入到这些子层中，而不通过另一个子层。可以通过利用n型半导体层中的位错并且使用在用于沉积半导体层的相同室中的蚀刻气氛来蚀刻有源层而不去除部分制造的器件来形成凹坑。

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