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1. 发明申请

US20110147589A1 ROOM TEMPERATURE ALUMINUM ANTIMONIDE RADIATION DETECTOR AND METHODS THEREOF 有权
标题翻译：室温铝氧化物辐射检测器及其方法
公开(公告)号：US20110147589A1
公开(公告)日：2011-06-23
申请号：US12774388
申请日：2010-05-05
申请人： Vincenzo Lordi , Kuang Jen J. Wu , Daniel Aberg , Paul Erhart , Arthur W. Coombs, III , Benjamin W. Sturm
发明人： Vincenzo Lordi , Kuang Jen J. Wu , Daniel Aberg , Paul Erhart , Arthur W. Coombs, III , Benjamin W. Sturm
IPC分类号： G01T1/00 , C30B11/00 , H01L21/322 , C30B15/00
CPC分类号： C30B29/40 , C30B11/04 , C30B15/04 , H01L21/02549 , H01L21/02573
摘要： In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal of AlSb in the growing environment which comprises hydrogen (H2) gas to reduce oxide formation and subsequent incorporation of oxygen impurities in the crystal, and adding a controlled amount of at least one impurity to the growing environment to effectively incorporate at least one dopant into the crystal. In another embodiment, a high energy radiation detector includes a single high-purity crystal of AlSb, a supporting structure for the crystal, and logic for interpreting signals obtained from the crystal which is operable as a radiation detector at a temperature of about 25° C. In one embodiment, a high-purity single crystal of AlSb includes AlSb and at least one dopant selected from a group consisting of selenium (Se), tellurium (Te), and tin (Sn).
摘要翻译：在一个实施方案中，用于制备锑化锑（AlSb）的高纯度单晶的方法包括提供生长环境以生长晶体，在包括氢（H 2）气体的生长环境中生长AlSb的单晶，减少氧化物形成并随后在晶体中引入氧杂质，并向生长环境中添加受控量的至少一种杂质以有效地将至少一种掺杂剂掺入到晶体中。在另一个实施例中，高能量辐射检测器包括AlSb的单个高纯度晶体，晶体的支撑结构，以及用于解释从晶体获得的信号的逻辑，该晶体在约25℃的温度下可用作辐射探测器在一个实施方案中，AlSb的高纯度单晶包括AlSb和选自由硒（Se），碲（Te）和锡（Sn）组成的组中的至少一种掺杂剂。

2. 发明授权

US08969803B2 Room temperature aluminum antimonide radiation detector and methods thereof 有权
标题翻译：室温铝锑辐射探测器及其方法
公开(公告)号：US08969803B2
公开(公告)日：2015-03-03
申请号：US12774388
申请日：2010-05-05
申请人： Vincenzo Lordi , Kuang Jen J. Wu , Daniel Aberg , Paul Erhart , Arthur W. Coombs, III , Benjamin W. Sturm
发明人： Vincenzo Lordi , Kuang Jen J. Wu , Daniel Aberg , Paul Erhart , Arthur W. Coombs, III , Benjamin W. Sturm
IPC分类号： G01T1/00 , C30B29/40 , C30B11/04 , C30B15/04 , H01L21/02
CPC分类号： C30B29/40 , C30B11/04 , C30B15/04 , H01L21/02549 , H01L21/02573
摘要： In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal of AlSb in the growing environment which comprises hydrogen (H2) gas to reduce oxide formation and subsequent incorporation of oxygen impurities in the crystal, and adding a controlled amount of at least one impurity to the growing environment to effectively incorporate at least one dopant into the crystal. In another embodiment, a high energy radiation detector includes a single high-purity crystal of AlSb, a supporting structure for the crystal, and logic for interpreting signals obtained from the crystal which is operable as a radiation detector at a temperature of about 25° C. In one embodiment, a high-purity single crystal of AlSb includes AlSb and at least one dopant selected from a group consisting of selenium (Se), tellurium (Te), and tin (Sn).
摘要翻译：在一个实施方案中，用于制备锑化锑（AlSb）的高纯度单晶的方法包括提供生长环境以生长晶体，在包括氢（H 2）气体的生长环境中生长AlSb的单晶，减少氧化物形成并随后在晶体中引入氧杂质，并向生长环境中添加受控量的至少一种杂质以有效地将至少一种掺杂剂掺入到晶体中。在另一个实施例中，高能量辐射检测器包括AlSb的单个高纯度晶体，晶体的支撑结构，以及用于解释从晶体获得的信号的逻辑，该晶体在约25℃的温度下可用作辐射探测器在一个实施方案中，AlSb的高纯度单晶包括AlSb和选自由硒（Se），碲（Te）和锡（Sn）组成的组中的至少一种掺杂剂。

3. 发明授权

US07224041B1 Design and fabrication of 6.1-Å family semiconductor devices using semi-insulating A1Sb substrate 有权
标题翻译：使用半绝缘AlSb衬底的6.1Å族半导体器件的设计和制造
公开(公告)号：US07224041B1
公开(公告)日：2007-05-29
申请号：US10856175
申请日：2004-05-28
申请人： John W. Sherohman , Arthur W. Coombs, III , Jick Hong Yee , Kuang Jen J. Wu
发明人： John W. Sherohman , Arthur W. Coombs, III , Jick Hong Yee , Kuang Jen J. Wu
IPC分类号： H01L29/12 , H01L31/0328
CPC分类号： H01L31/0328 , H01L21/02398 , H01L21/02466 , H01L21/02538 , H01L21/02546 , H01L21/02549 , H01L21/02551 , H01L21/0256 , H01L21/02562 , H01L21/02631 , H01L31/036 , H01L31/109
摘要： For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-Å family heterostructure devices.
摘要翻译：首次使用锑酸铝（AlSb）单晶衬底与上层半导体层进行晶格匹配。 AlSb衬底建立了一种新的设计和制造方法来构建高速，低功耗电子器件，同时建立器件间隔离。衬底和上覆半导体层之间的这种晶格匹配使形成缺陷（例如螺纹位错）最小化，这可以降低6.1族家族异质结构器件的产量和使用寿命。

4. 发明授权

US06887441B2 High resistivity aluminum antimonide radiation detector 失效
公开(公告)号：US06887441B2
公开(公告)日：2005-05-03
申请号：US10260141
申请日：2002-09-30
申请人： John W. Sherohman , Arthur W. Coombs, III , Jick H. Yee
发明人： John W. Sherohman , Arthur W. Coombs, III , Jick H. Yee
IPC分类号： C30B15/00 , C30B33/00 , C30B29/40
CPC分类号： C30B15/00 , C30B29/40 , C30B33/00 , Y10T117/1004 , Y10T117/1024
摘要： Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.

5. 发明授权

US07309393B2 High resistivity aluminum antimonide radiation detector 失效
标题翻译：高电阻铝锑射线探测器
公开(公告)号：US07309393B2
公开(公告)日：2007-12-18
申请号：US11040573
申请日：2005-01-21
申请人： John W. Sherohman , Arthur W. Coombs, III , Jick H. Yee
发明人： John W. Sherohman , Arthur W. Coombs, III , Jick H. Yee
IPC分类号： C30B15/20
CPC分类号： C30B15/00 , C30B29/40 , C30B33/00 , Y10T117/1004 , Y10T117/1024
摘要： Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.
摘要翻译：已经制备了基于大量铝锑（AlSb）的单晶材料用作环境（室温）X射线和γ射线辐射检测。

6. 发明授权

US5412180A Ultra high vacuum heating and rotating specimen stage 失效
标题翻译：超高真空加热和旋转样品台
公开(公告)号：US5412180A
公开(公告)日：1995-05-02
申请号：US160263
申请日：1993-12-02
申请人： Arthur W. Coombs, III
发明人： Arthur W. Coombs, III
IPC分类号： H01J37/20 , C23C16/46 , H05B3/68
CPC分类号： H01J37/20 , H01J2237/2001 , H01J2237/20214
摘要： A heating and rotating specimen stage provides for simultaneous specimen heating and rotating. The stage is ideally suited for operation in ultrahigh vacuum (1.times.10.sup.-9 torr or less), but is useful at atmosphere and in pressurized systems as well. A specimen is placed on a specimen holder that is attached to a heater that, in turn, is attached to a top housing. The top housing is rotated relative to a bottom housing and electrically connected thereto by electrically conductive brushes. This stage is made of materials that are compatible with UHV, able to withstand high temperatures, possess low outgassing rates, are gall and seize resistant, and are able to carry substantial electrical loading without overheating.
摘要翻译：加热和旋转的样品台提供同时的样品加热和旋转。该阶段非常适用于超高真空（1×10 -9 torr或更低）的操作，但在大气和加压系统中也是有用的。将样品放置在附接到加热器的样品保持器上，加热器又附接到顶部壳体。顶部壳体相对于底部壳体旋转并通过导电刷与其电连接。该阶段由与特高压兼容的材料制成，能够承受高温，具有低的除气速率，耐腐蚀性和抗咬合性，并且能够承载大量的电荷而不会过热。

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