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1. 发明授权

US06707110B2 Layout configurable electrostatic discharge device for integrated circuits 有权
标题翻译：用于集成电路的布局可配置静电放电装置
公开(公告)号：US06707110B2
公开(公告)日：2004-03-16
申请号：US10131924
申请日：2002-04-25
申请人： Vincent De Heyn , Guido Groeseneken , Louis Vacaresse , Geert Gallopyn , Hugo Van Hove
发明人： Vincent De Heyn , Guido Groeseneken , Louis Vacaresse , Geert Gallopyn , Hugo Van Hove
IPC分类号： H01L2362
CPC分类号： H01L27/0259 , H01L29/7322 , H01L29/735
摘要： Electrostatic discharge protection device comprising a first highly p-doped region with a base contact, a first highly n-doped region with a collector contact, a second highly n-doped region with an emitter contact and located between the first highly p-doped region and the second highly n-doped region, the first highly p-doped region and the second highly n-doped region being applied in a weakly p-doped region which a has a lateral overlap extending towards the first highly n-doped region, the lateral overlap having a width, the first highly n-doped region being applied in a weakly n-doped region, the weakly p-doped region and the weakly n-doped region being applied in a more weakly n-doped region, and a highly n-doped buried layer located underneath the more weakly n-doped region and extending below at least a portion of the weakly n-doped region and at least a portion of the weakly p-doped region. The device enables a lateral current component from the first highly n-doped region in the direction of the second highly n-doped region and a vertical current component from the first highly n-doped region via the buried layer in the direction of the second highly n-doped region. The width of the lateral overlap of the weakly p-doped region is determined in function of the predetermined ratio between the lateral current component and the vertical current component.
摘要翻译： 1.一种静电放电保护装置，包括具有基极接触的第一高p掺杂区域，具有集电极触点的第一高度n掺杂区域，具有发射极接触的第二高度n掺杂区域，并且位于第一高度p掺杂区域之间和第二高度n掺杂区域，第一高p掺杂区域和第二高度n掺杂区域被施加在弱p掺杂区域中，其具有向第一高度n掺杂区域延伸的横向重叠区域，具有宽度的横向重叠，第一高度n掺杂区域施加在弱n掺杂区域中，弱p掺杂区域和弱n掺杂区域被施加在更弱的n掺杂区域中，并且高度 n掺杂掩埋层位于较弱的n掺杂区域下方并在弱n掺杂区域的至少一部分和弱p掺杂区域的至少一部分的下方延伸。该器件能够在第二高度n掺杂区域的方向上产生来自第一高度n掺杂区域的横向电流分量，以及在第二高度n掺杂区域的方向上经由掩埋层从第一高度n掺杂区域的垂直电流分量 n掺杂区域。根据横向电流分量和垂直电流分量之间的预定比例来确定弱p掺杂区域的横向重叠的宽度。

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