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1. 发明申请

US20120304926A1 HEATED WAFER CARRIER PROFILING 有权
标题翻译：加热滚筒载体轮廓
公开(公告)号：US20120304926A1
公开(公告)日：2012-12-06
申请号：US13483354
申请日：2012-05-30
申请人： Vadim Boguslavskiy , Joshua Mangum , Matthew King , Earl Marcelo , Eric A. Armour , Alexander I. Gurary , William E. Quinn , Guray Tas
发明人： Vadim Boguslavskiy , Joshua Mangum , Matthew King , Earl Marcelo , Eric A. Armour , Alexander I. Gurary , William E. Quinn , Guray Tas
IPC分类号： C23C16/52 , G01H1/00 , G01J5/00 , G01N21/956 , G01J5/02
CPC分类号： H01L21/68764 , C23C16/4584 , C23C16/46 , C23C16/52 , G01N21/71 , G01N21/75 , G01N23/20033 , G01N2021/1731 , G01N2021/745 , H01L21/67109 , H01L21/68771
摘要： An apparatus includes a carrier rotatable about an axis of rotation where the carrier has a top surface adapted to hold at least one semiconductor wafer and a surface characterization tool which is operative to move over a plurality of positions relative to the top surface of the carrier and/or the wafer transverse to the axis of rotation. The surface characterization tool is operative to move over a plurality of positions relative to the top surface of the carrier and/or the wafer transverse to the axis of rotation and is further adapted to produce characterization signals over the plurality of positions on at least a portion of the carrier and/or on at least a portion of said major surface of the wafer as the carrier rotates.
摘要翻译：一种装置包括可围绕旋转轴线旋转的载体，其中载体具有适于保持至少一个半导体晶片的顶表面和可操作以相对于载体的顶表面在多个位置上移动的表面表征工具，以及 /或横向于旋转轴线的晶片。表面表征工具可操作以相对于载体的横向于旋转轴线的载体和/或晶片的顶表面在多个位置上移动，并且还适于在至少一部分上的多个位置上产生表征信号和/或在载体旋转时在晶片的所述主表面的至少一部分上。

2. 发明授权

US09653340B2 Heated wafer carrier profiling 有权
公开(公告)号：US09653340B2
公开(公告)日：2017-05-16
申请号：US13483354
申请日：2012-05-30
申请人： Vadim Boguslavskiy , Joshua Mangum , Matthew King , Earl Marcelo , Eric A. Armour , Alexander I. Gurary , William E. Quinn , Guray Tas
发明人： Vadim Boguslavskiy , Joshua Mangum , Matthew King , Earl Marcelo , Eric A. Armour , Alexander I. Gurary , William E. Quinn , Guray Tas
IPC分类号： C23C16/52 , G01N21/71 , H01L21/687 , G01N21/75 , G01N23/20 , H01L21/67 , C23C16/458 , C23C16/46 , G01N21/74 , G01N21/17
CPC分类号： H01L21/68764 , C23C16/4584 , C23C16/46 , C23C16/52 , G01N21/71 , G01N21/75 , G01N23/20033 , G01N2021/1731 , G01N2021/745 , H01L21/67109 , H01L21/68771
摘要： An apparatus includes a carrier rotatable about an axis of rotation where the carrier has a top surface adapted to hold at least one semiconductor wafer and a surface characterization tool which is operative to move over a plurality of positions relative to the top surface of the carrier and/or the wafer transverse to the axis of rotation. The surface characterization tool is operative to move over a plurality of positions relative to the top surface of the carrier and/or the wafer transverse to the axis of rotation and is further adapted to produce characterization signals over the plurality of positions on at least a portion of the carrier and/or on at least a portion of said major surface of the wafer as the carrier rotates.

3. 发明授权

US08958061B2 Heated wafer carrier profiling 有权
标题翻译：加热晶片载体轮廓
公开(公告)号：US08958061B2
公开(公告)日：2015-02-17
申请号：US13483491
申请日：2012-05-30
申请人： Vadim Boguslavskiy , Joshua Mangum , Matthew King , Earl Marcelo , Eric A. Armour , Alexander I. Gurary , William E. Quinn , Guray Tas
发明人： Vadim Boguslavskiy , Joshua Mangum , Matthew King , Earl Marcelo , Eric A. Armour , Alexander I. Gurary , William E. Quinn , Guray Tas
IPC分类号： G01N21/00 , H01L21/687 , H01L21/67 , C23C16/458 , C23C16/46 , C23C16/52
CPC分类号： H01L21/68764 , C23C16/4584 , C23C16/46 , C23C16/52 , G01N21/71 , G01N21/75 , G01N23/20033 , G01N2021/1731 , G01N2021/745 , H01L21/67109 , H01L21/68771
摘要： A method for characterizing a surface comprises rotating a carrier about an axis of rotation where the carrier has a top surface adapted to hold at least one semiconductor wafer with a major surface of the wafer extending generally transverse to the axis of rotation. A surface characterization tool is moved over a plurality of positions relative to the top surface of the carrier, where a measurement location over the top surface of the carrier is changed while said top surface of the carrier is heated to a predetermined temperature. Characterization signals over the plurality of positions with the surface characterization tool are produced and contain information about the heated top surface of the carrier, or when semiconductor wafers are held on the carrier, information about the semiconductor wafer can also be obtained.
摘要翻译：用于表征表面的方法包括围绕旋转轴旋转载体，其中载体具有适于保持至少一个半导体晶片的顶表面，其中晶片的主表面大致横向于旋转轴线延伸。表面表征工具相对于载体的顶表面在多个位置上移动，其中载体顶表面上的测量位置改变，同时载体的顶表面被加热到预定温度。产生具有表面表征工具的多个位置上的表征信号，并且包含关于载体的加热的顶表面的信息，或者当半导体晶片被保持在载体上时，也可以获得关于半导体晶片的信息。

4. 发明申请

US20120307233A1 HEATED WAFER CARRIER PROFILING 有权
标题翻译：加热滚筒载体轮廓
公开(公告)号：US20120307233A1
公开(公告)日：2012-12-06
申请号：US13483491
申请日：2012-05-30
申请人： Vadim Boguslavskiy , Joshua Mangum , Matthew King , Earl Marcelo , Eric A. Armour , Alexander I. Gurary , William E. Quinn , Guray Tas
发明人： Vadim Boguslavskiy , Joshua Mangum , Matthew King , Earl Marcelo , Eric A. Armour , Alexander I. Gurary , William E. Quinn , Guray Tas
IPC分类号： G01J5/48
CPC分类号： H01L21/68764 , C23C16/4584 , C23C16/46 , C23C16/52 , G01N21/71 , G01N21/75 , G01N23/20033 , G01N2021/1731 , G01N2021/745 , H01L21/67109 , H01L21/68771
摘要： A method for characterizing a surface comprises rotating a carrier about an axis of rotation where the carrier has a top surface adapted to hold at least one semiconductor wafer with a major surface of the wafer extending generally transverse to the axis of rotation. A surface characterization tool is moved over a plurality of positions relative to the top surface of the carrier, where a measurement location over the top surface of the carrier is changed while said top surface of the carrier is heated to a predetermined temperature. Characterization signals over the plurality of positions with the surface characterization tool are produced and contain information about the heated top surface of the carrier, or when semiconductor wafers are held on the carrier, information about the semiconductor wafer can also be obtained.
摘要翻译：用于表征表面的方法包括围绕旋转轴旋转载体，其中载体具有适于保持至少一个半导体晶片的顶表面，其中晶片的主表面大致横向于旋转轴线延伸。表面表征工具相对于载体的顶表面在多个位置上移动，其中载体顶表面上的测量位置改变，同时载体的顶表面被加热到预定温度。产生具有表面表征工具的多个位置上的表征信号，并且包含关于载体的加热的顶表面的信息，或者当半导体晶片被保持在载体上时，也可以获得关于半导体晶片的信息。

5. 发明申请

US20100087050A1 Chemical vapor deposition with energy input 有权
标题翻译：化学气相沉积与能量输入
公开(公告)号：US20100087050A1
公开(公告)日：2010-04-08
申请号：US12587228
申请日：2009-10-02
申请人： Eric A. Armour , William E. Quinn , Joshua Mangum
发明人： Eric A. Armour , William E. Quinn , Joshua Mangum
IPC分类号： H01L21/363
CPC分类号： C23C16/511 , C23C16/303 , C23C16/45551 , C23C16/483 , C30B25/105 , C30B29/403 , C30B29/406
摘要： Methods of depositing compound semiconductors onto substrates are disclosed, including directing gaseous reactants into a reaction chamber containing the substrates, selectively supplying energy to one of the gaseous reactants in order to impart sufficient energy to activate that reactant but insufficient to decompose the reactant, and then decomposing the reactant at the surface of the substrate in order to react with the other reactants. The preferred energy source is microwave or infrared radiation, and reactors for carrying out these methods are also disclosed.
摘要翻译：公开了将化合物半导体沉积到基底上的方法，包括将气态反应物导入含有底物的反应室中，选择性地向气体反应物之一供应能量，以赋予足够的能量来活化该反应物但不足以分解反应物，然后在基材的表面分解反应物以与其它反应物反应。优选的能量源是微波或红外辐射，还公开了用于实施这些方法的反应器。

6. 发明申请

US20110174213A1 Vapor Phase Epitaxy System 审中-公开
标题翻译：气相外延系统
公开(公告)号：US20110174213A1
公开(公告)日：2011-07-21
申请号：US13121371
申请日：2009-10-01
申请人： Joshua Mangum , William E. Quinn , Eric A. Armour
发明人： Joshua Mangum , William E. Quinn , Eric A. Armour
IPC分类号： C30B25/02 , C23C16/455
CPC分类号： C23C16/511 , C23C16/303 , C23C16/45551 , C23C16/483 , C30B25/105 , C30B29/403 , C30B29/406
摘要： A vapor phase epitaxy system includes a platen that supports substrates for vapor phase epitaxy and a gas injector. The gas injector injects a first precursor gas into a first region and injects a second precursor gas into a second region. At least one electrode is positioned in the first region so that first precursor gas molecules flow proximate to the electrode. The at least one electrode is positioned to be substantially isolated from a flow of the second precursor gas. A power supply is electrically connected to the at least one electrode. The power supply generates a current that heats the at least one electrode so as to thermally activate at least some of the first precursor gas molecules flowing proximate to the at least one electrode, thereby activating first precursor gas molecules.
摘要翻译：气相外延系统包括支撑用于气相外延的衬底的压板和气体注入器。气体喷射器将第一前体气体注入第一区域并将第二前体气体注入第二区域。至少一个电极位于第一区域中，使得第一前体气体分子流到电极附近。至少一个电极定位成与第二前体气体的流动基本隔离。电源电连接到至少一个电极。电源产生加热至少一个电极的电流，以便热激活靠近至少一个电极流动的至少一些第一前体气体分子，由此激活第一前体气体分子。

7. 发明授权

US08815709B2 Chemical vapor deposition with energy input 有权
标题翻译：化学气相沉积与能量输入
公开(公告)号：US08815709B2
公开(公告)日：2014-08-26
申请号：US12587228
申请日：2009-10-02
申请人： Joshua Mangum , Eric A. Armour , William E. Quinn
发明人： Joshua Mangum , Eric A. Armour , William E. Quinn
IPC分类号： H01L21/20
CPC分类号： C23C16/511 , C23C16/303 , C23C16/45551 , C23C16/483 , C30B25/105 , C30B29/403 , C30B29/406
摘要： Methods of depositing compound semiconductors onto substrates are disclosed, including directing gaseous reactants into a reaction chamber containing the substrates, selectively supplying energy to one of the gaseous reactants in order to impart sufficient energy to activate that reactant but insufficient to decompose the reactant, and then decomposing the reactant at the surface of the substrate in order to react with the other reactants. The preferred energy source is microwave or infrared radiation, and reactors for carrying out these methods are also disclosed.
摘要翻译：公开了将化合物半导体沉积到基底上的方法，包括将气态反应物导入含有底物的反应室中，选择性地向气体反应物之一供应能量，以赋予足够的能量来活化该反应物但不足以分解反应物，然后在基材的表面分解反应物以与其它反应物反应。优选的能量源是微波或红外辐射，还公开了用于实施这些方法的反应器。

8. 发明申请

US20100086703A1 Vapor Phase Epitaxy System 审中-公开
标题翻译：气相外延系统
公开(公告)号：US20100086703A1
公开(公告)日：2010-04-08
申请号：US12572245
申请日：2009-10-01
申请人： Joshua Mangum , William E. Quinn , Eric Armour
发明人： Joshua Mangum , William E. Quinn , Eric Armour
IPC分类号： C23C16/50 , C23C16/00 , H05H1/24
CPC分类号： C23C16/511 , C23C16/303 , C23C16/45551 , C23C16/483 , C30B25/105 , C30B29/403 , C30B29/406
摘要： A vapor phase epitaxy system includes a platen that supports substrates for vapor phase epitaxy and a gas injector. The gas injector injects a first precursor gas into a first region and injects a second precursor gas into a second region. At least one electrode is positioned in the first region so that first precursor gas molecules flow proximate to the electrode. The at least one electrode is positioned to be substantially isolated from a flow of the second precursor gas. A power supply is electrically connected to the at least one electrode. The power supply generates a current that heats the at least one electrode so as to thermally activate at least some of the first precursor gas molecules flowing proximate to the at least one electrode.
摘要翻译：气相外延系统包括支撑用于气相外延的衬底的压板和气体注入器。气体喷射器将第一前体气体注入第一区域并将第二前体气体注入第二区域。至少一个电极位于第一区域中，使得第一前体气体分子流到电极附近。至少一个电极定位成与第二前体气体的流动基本隔离。电源电连接到至少一个电极。电源产生加热至少一个电极的电流，以便热激活靠近至少一个电极流动的至少一些第一前体气体分子。

9. 发明授权

US08486726B2 Method for improving performance of a substrate carrier 有权
标题翻译：改善衬底载体性能的方法
公开(公告)号：US08486726B2
公开(公告)日：2013-07-16
申请号：US12629467
申请日：2009-12-02
申请人： Joshua Mangum , William E. Quinn
发明人： Joshua Mangum , William E. Quinn
IPC分类号： G01R31/26 , C23C16/00
CPC分类号： H01L21/67383 , C23C16/44 , H01L21/02104 , H01L21/67366 , H01L21/68735 , H01L21/68771 , H01L22/12 , H01L22/20
摘要： A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter of at least some devices fabricated on the substrate or a property of the deposited layers is related to a physical characteristic of substrate carrier to obtain a plurality of physical characteristics of the substrate carrier corresponding to a plurality of positions on the substrate carrier. The physical characteristic of the substrate carrier is then modified at one or more of the plurality of corresponding positions on the substrate carrier to obtain desired parameters of the deposited layers or fabricated devices as a function of position on the substrate carrier.
摘要翻译：改进衬底载体以改善工艺性能的方法包括在由衬底载体支撑的衬底上沉积材料或制造器件。然后根据其在衬底载体上的对应位置来测量沉积在衬底上的层的参数。在衬底上制造的至少一些器件的测量参数或沉积层的性质与衬底载体的物理特性相关，以获得对应于衬底载体上的多个位置的衬底载体的多个物理特性。然后在衬底载体上的多个对应位置中的一个或多个位置修改衬底载体的物理特性，以获得作为衬底载体上的位置的函数的沉积层或制造器件的期望参数。

10. 发明申请

US20110215071A1 WAFER CARRIER WITH SLOPED EDGE 有权
标题翻译：带边坡的拖车
公开(公告)号：US20110215071A1
公开(公告)日：2011-09-08
申请号：US13037770
申请日：2011-03-01
申请人： Bojan Mitrovic , Joshua Mangum , William E. Quinn
发明人： Bojan Mitrovic , Joshua Mangum , William E. Quinn
IPC分类号： C23F1/00 , C23C16/455 , C23C16/458 , C23C16/46 , C23F1/08 , B25B11/00
CPC分类号： H01L21/68764 , C23C16/303 , C23C16/45563 , C23C16/45587 , C23C16/4584 , C23C16/4585 , H01L21/68735 , H01L21/68771
摘要： A wafer carrier includes a body defining a central axis, a generally planar top surface perpendicular to the central axis, and pockets recessed below the top surface for receiving wafers. The body can include a lip projecting upwardly around the periphery of the top surface. The lip can define a lip surface sloping upwardly from the planar top surface in a radially outward direction away from the central axis. The body can be adapted for mounting on a spindle of a processing apparatus so that the central axis of the body is coaxial with the spindle. The lip can improve the pattern of gas flow over the top surface of the wafer carrier.
摘要翻译：晶片载体包括限定中心轴线的主体，垂直于中心轴线的大致平面的顶表面，以及凹陷在顶表面下方的用于接收晶片的凹槽。身体可以包括围绕顶表面的周边向上突出的唇缘。唇缘可以限定从平面顶表面向远离中心轴线的径向向外的方向向上倾斜的唇表面。主体可适于安装在处理装置的主轴上，使得主体的中心轴线与主轴同轴。唇缘可以改善在晶片载体的顶表面上的气流的图案。

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