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1. 发明申请

WO2007109252A2 METHOD OF PLASMA PROCESSING WITH IN-SITU MONITORING AND PROCESS PARAMETER TUNING 审中-公开
标题翻译：用现场监测和过程参数调谐进行等离子体处理的方法
公开(公告)号：WO2007109252A2
公开(公告)日：2007-09-27
申请号：PCT/US2007/006879
申请日：2007-03-20
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , RENAU, Anthony , SINGH, Vikram , GUPTA, Atul , MILLER, Timothy , AREVALO, Edwin , PAPASOULIOTIS, George , JEON, Yong Bae
发明人： RENAU, Anthony , SINGH, Vikram , GUPTA, Atul , MILLER, Timothy , AREVALO, Edwin , PAPASOULIOTIS, George , JEON, Yong Bae
CPC分类号： H01J37/32935 , H01J37/32412 , H01J37/3299 , H01L22/20
摘要： A method of selecting plasma doping process parameters includes determining a recipe parameter database for achieving at least one plasma doping condition. The initial recipe parameters are determined from the recipe parameter database. In-situ measurements of at least one plasma doping condition are performed. The in-situ measurements of the at least one plasma doping condition are correlated to at least one plasma doping result. At least one recipe parameter is changed in response to the correlation so as to improve at least one plasma doping process performance metric.
摘要翻译：选择等离子体掺杂工艺参数的方法包括确定用于实现至少一种等离子体掺杂条件的配方参数数据库。从配方参数数据库确定初始配方参数。进行至少一个等离子体掺杂条件的原位测量。至少一种等离子体掺杂条件的原位测量与至少一种等离子体掺杂结果相关。响应于相关性改变至少一个配方参数，以便改进至少一个等离子体掺杂工艺性能度量。

2. 发明申请

WO2006002138A2 ETCH AND DEPOSITION CONTROL FOR PLASMA IMPLANTATION 审中-公开
标题翻译：等离子体注入的蚀刻和沉积控制
公开(公告)号：WO2006002138A2
公开(公告)日：2006-01-05
申请号：PCT/US2005/021883
申请日：2005-06-21
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , SINGH, Vikram , PERSING, Harold , MILLER, Timothy , GUPTA, Atul , FANG, Ziwei
发明人： SINGH, Vikram , PERSING, Harold , MILLER, Timothy , GUPTA, Atul , FANG, Ziwei
IPC分类号： H01J37/00
CPC分类号： H01L21/2236 , H01J37/32412
摘要： A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surfacemodifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.
摘要翻译：一种用于衬底的离子注入的方法包括：从包括至少一种注入物种的至少一种注入材料形成等离子体;将所述至少一种注入物种注入到所述衬底的表面中;以及引导至少一个表面和害羞;在表面修饰物质以减少与等离子体相关的表面损伤。一种用于离子注入的装置被配置为实施该方法。

3. 发明申请

WO2005093780A2 RF PLASMA SOURCE WITH CONDUCTIVE TOP SECTION 审中-公开
标题翻译： RF等离子体源与导电顶部
公开(公告)号：WO2005093780A2
公开(公告)日：2005-10-06
申请号：PCT/US2005/008709
申请日：2005-03-16
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , SINGH, Vikram , PERSING, Harold , MILLER, Timothy
发明人： SINGH, Vikram , PERSING, Harold , MILLER, Timothy
IPC分类号： H01J37/32
CPC分类号： H01J37/32412
摘要： A plasma source includes a chamber that contains a process gas. The chamber has a chamber top comprising a first section formed of a dielectric material that extends in a horizontal direction. A second section of the chamber top is formed of a dielectric material that extends a height from the first section in a vertical direction. A top section of the chamber top is formed of a conductive material that extends a length across the second section in the horizontal direction. A radio frequency antenna is positioned proximate to at least one of the first section and the second section. The radio frequency antenna induces radio frequency currents into the chamber that excite and ionize the process gas so as to generate a plasma in the chamber.
摘要翻译：等离子体源包括含有工艺气体的腔室。所述腔室具有包括由在水平方向上延伸的电介质材料形成的第一部分的腔室顶部。腔室顶部的第二部分由在垂直方向上从第一部分延伸高度的电介质材料形成。腔室顶部的顶部由导电材料形成，该导电材料在水平方向上延伸穿过第二部分的长度。无线电频率天线位于第一部分和第二部分中的至少一个附近。射频天线将射频电流引入腔室中，激发和离子化工艺气体，以便在腔室中产生等离子体。

4. 发明申请

WO2005104175A1 FARADAY DOSE AND UNIFORMITY MONITOR FOR PLASMA BASED ION IMPLANTATION 审中-公开
标题翻译：用于基于等离子体离子植入的非离子剂量和均匀性监测器
公开(公告)号：WO2005104175A1
公开(公告)日：2005-11-03
申请号：PCT/US2005/006973
申请日：2005-03-04
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , WALTHER, Steven, R. , DORAI, Rajesh , PERSING, Harold , SCHEUER, Jay , KOO, Bon-Woong , PEDERSEN, Bjorn, O. , LEAVITT, Chris , MILLER, Timothy
发明人： WALTHER, Steven, R. , DORAI, Rajesh , PERSING, Harold , SCHEUER, Jay , KOO, Bon-Woong , PEDERSEN, Bjorn, O. , LEAVITT, Chris , MILLER, Timothy
IPC分类号： H01J37/32
CPC分类号： H01J37/32963 , H01J37/32935 , H01J37/3299 , H01J2237/24405
摘要： A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup (80) surrounding a target wafer (20). A narrow aperture can reduce discharges within Faraday cup opening (60). The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.
摘要翻译：法拉第剂量和均匀性监测器可以包括围绕目标晶片（20）的磁抑制环形法拉第杯（80）。狭窄的孔径可以减少法拉第杯开口（60）内的排放。环形法拉第杯可以具有连续的横截面，以消除由于断裂引起的排放。多个不同半径的环形法拉第杯可以独立地测量电流密度以监测等离子体均匀性的变化。磁场抑制场可以被配置为具有随着距离的场强非常快速的降低，以使等离子体和植入物扰动最小化，并且可以包括径向和方位角分量，或者主要包括方位角分量。方位角分量可以由交替极性的多个垂直取向的磁体或通过使用磁场线圈来产生。此外，剂量电子学可以提供高电压脉冲电流的集成，并且可以将积分电荷转换成光耦合到剂量控制器的一系列光脉冲。

5. 发明申请

WO2014058642A1 INDUCTIVELY COUPLED PLASMA ION SOURCE CHAMBER WITH DOPANT MATERIAL SHIELD 审中-公开
标题翻译：电感耦合等离子体离子源室
公开(公告)号：WO2014058642A1
公开(公告)日：2014-04-17
申请号：PCT/US2013/062652
申请日：2013-09-30
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： BILOIU, Costel , KOO, Bon-Woong , MILLER, Timothy , RENAU, Anthony
IPC分类号： H01J37/32 , H01J27/02 , H01J27/16 , H01J27/26 , H01J49/10 , H01J37/08
CPC分类号： H01J37/32119 , H01J27/16 , H01J37/32477 , H01J37/32651 , H01J49/105 , H01J2237/0815
摘要： A plasma ion source including a plasma chamber, gas inlets, an RF antenna, an RF window, an extraction plate, a window shield, and a chamber liner. The RF window may be positioned intermediate the RF antenna and the plasma chamber. The window shield may be disposed intermediate the RF widow and the interior of the plasma chamber and the chamber liner may cover the interior surface of the plasma chamber. During operation of the ion source, the window shield sustains ionic bombardment that would otherwise be sustained by the RF window. Fewer impurity ions are therefore released into the plasma chamber. Simultaneously, additional dopant atoms are released from the window shield into the plasma chamber. Ionic bombardment is also sustained by the chamber liner, which also contributes a quantity of dopant atoms to the plasma chamber. Dopant ion production within the plasma chamber is thereby increased while impurities are minimized.
摘要翻译：一种等离子体离子源，包括等离子体室，气体入口，RF天线，RF窗，提取板，窗户屏蔽和室衬垫。 RF窗口可以位于RF天线和等离子体室之间。窗口屏蔽件可以设置在RF寡围和等离子体室的内部之间，并且腔室衬套可以覆盖等离子体室的内表面。在离子源操作期间，窗口屏蔽件维持否则由RF窗口维持的离子轰击。因此，较少的杂质离子被释放到等离子体室中。同时，另外的掺杂剂原子从窗口屏蔽释放到等离子体室中。离子轰击也由腔室衬垫维持，这也有助于等离子体室的掺杂剂原子的量。因此，等离子体室内的掺杂离子产生增加，同时使杂质最小化。

6. 发明申请

WO2016043987A1 ACTIVE SUBSTRATE ALIGNMENT SYSTEM AND METHOD 审中-公开
标题翻译：主动基板对准系统及方法
公开(公告)号：WO2016043987A1
公开(公告)日：2016-03-24
申请号：PCT/US2015/048463
申请日：2015-09-04
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： WEBB, Aaron , MILLER, Timothy , PRIDE, Tammy Jo , GRANT, Christopher N. , STRASSNER, James D. , CARLSON, Charles T.
IPC分类号： H01L21/68
CPC分类号： H01L21/681 , C23C14/48 , G06K9/6202 , G06T7/001 , G06T7/74 , G06T2207/30148 , H01J37/20 , H01J37/22 , H01J37/3045 , H01J37/3171
摘要： An active substrate alignment system for an ion implanter, the system including a platen, a registration device adapted to selectively move a substrate engagement surface disposed adjacent the platen for limiting movement of a substrate disposed on the platen, a camera configured to capture an image of the substrate before the substrate is disposed on the platen, and a controller in communication with the camera and the registration device, the controller configured to command the registration device to move the substrate engagement surface based on the image to limit movement of the substrate in a predetermined manner.
摘要翻译：一种用于离子注入机的有源衬底对准系统，该系统包括压板，配准装置，其适于选择性地移动邻近压板设置的衬底接合表面，以限制设置在压板上的衬底的运动;照相机，在基板之前的基板设置在压板上，以及控制器，其与相机和配准装置通信，所述控制器被配置为基于图像来命令对准装置移动基板接合表面以限制基板的运动预定方式。

7. 发明申请

WO2014018340A1 BEAMLINE ELECTRODE VOLTAGE MODULATION FOR ION BEAM GLITCH RECOVERY 审中-公开
标题翻译：光束电极电压调制用于离子束玻璃回收
公开(公告)号：WO2014018340A1
公开(公告)日：2014-01-30
申请号：PCT/US2013/050891
申请日：2013-07-17
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： LUBICKI, Piotr , LEAVITT, Christopher , MILLER, Timothy , KOO, Bon-Woong
IPC分类号： H01J37/02 , H01J37/24 , H01J37/304 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/026 , H01J37/241 , H01J37/304 , H01J2237/24564
摘要： An ion implantation system and method are disclosed in which glitches in voltage are minimized by use of a modulated power supply system (230) in the implanter. The modulated power supply system includes a traditional power supply (300) and a control unit (310) associated with each power supply, where the control unit is used to isolate the power supply from an electrode by opening a source switch (321) if a glitch or arc is detected, and to quickly dissipate any charge on the electrode to ground by closing a discharge switch (331). The control unit then restores connectivity between power supply and electrode after the glitch condition has been rectified.
摘要翻译：公开了一种离子注入系统和方法，其中通过使用注入机中的调制供电系统（230）将电压中的毛刺最小化。调制电源系统包括与每个电源相关联的传统电源（300）和控制单元（310），其中，如果控制单元用于通过打开源开关（321）来将电源与电极隔离，如果检测到毛刺或电弧，并通过关闭放电开关（331）将电极上的任何电荷快速耗散到地面上。控制单元在毛刺状态纠正完毕后恢复电源和电极之间的连接。

8. 发明申请

WO2012047837A2 REMOTELY CONTROLLED APPARATUS FOR DOWNHOLE APPLICATIONS, COMPONENTS FOR SUCH APPARATUS, REMOTE STATUS INDICATION DEVICES FOR SUCH APPARATUS, AND RELATED METHODS 审中-公开
标题翻译：用于井下应用的远程控制装置，这种装置的组件，用于这种装置的远程状态指示装置及相关方法
公开(公告)号：WO2012047837A2
公开(公告)日：2012-04-12
申请号：PCT/US2011/054692
申请日：2011-10-04
申请人： BAKER HUGHES INCORPORATED , RADFORD, Steven, R. , JURICA, Chad, T. , LI, Li , MILLER, Timothy , OESTERBERG, Marcus , TRINH, Khoi, Q.
发明人： RADFORD, Steven, R. , JURICA, Chad, T. , LI, Li , MILLER, Timothy , OESTERBERG, Marcus , TRINH, Khoi, Q.
IPC分类号： E21B34/06 , E21B23/04 , E21B10/32 , E21B44/00 , E21B7/00
CPC分类号： E21B10/322 , E21B10/60 , E21B23/006 , E21B23/04 , E21B34/10
摘要： An expandable apparatus may comprise a tubular body, a valve piston and a push sleeve. The tubular body may comprise a fluid passageway extending therethrough, and the valve piston may be disposed within the tubular body, the valve piston configured to move axially within the tubular body responsive to a pressure of drilling fluid passing through the fluid passageway and configured to selectively control a flow of fluid into an annular chamber. The push sleeve may be disposed within the tubular body and coupled to at least one expandable feature, the push sleeve configured to move axially responsive to the flow of fluid into the annular chamber extending the at least one expandable feature. Additionally, the expandable apparatus may be configured to generate a signal indicating the extension of the at least one expandable feature.
摘要翻译：可扩张装置可以包括管状主体，阀活塞和推动套筒。管状体可以包括延伸穿过其中的流体通道，并且阀活塞可以设置在管状体内，阀活塞构造成响应于穿过流体通道的钻井流体的压力在管状体内轴向移动并且被配置为选择性地控制流体流入环形室。推动套筒可以设置在管状主体内并且联接到至少一个可扩张特征，推动套筒配置成轴向响应于流入环形室的流体而延伸至少一个可扩张特征。另外，可扩展装置可以被配置为产生指示所述至少一个可扩展特征的扩展的信号。

9. 发明申请

WO2013134501A1 COLD PLANER ANTI-SLABBING MECHANISM 审中-公开
标题翻译：冷平板防滑机构
公开(公告)号：WO2013134501A1
公开(公告)日：2013-09-12
申请号：PCT/US2013/029599
申请日：2013-03-07
申请人： CATERPILLAR PAVING PRODUCTS INC. , JEEVANANTHAM, Gnanasekar , MILLER, Timothy
发明人： JEEVANANTHAM, Gnanasekar , MILLER, Timothy
IPC分类号： E01C23/12
CPC分类号： E01C23/088 , E01C23/127
摘要： A cold planer (10) includes a frame (12) and a cutting mechanism (24) having a rotatable cutter (32) configured to cut material of a substrate (100). An anti-slabbing mechanism (34) is coupled to the frame (12) and includes an upwardly oriented base plate (36), and a plurality of skids (42). The skids (42) are arranged in a first subset (44) and a second subset (46) positioned upon opposite outboard sides of a forwardly projecting plow (40), and downwardly depend from a base plate (36) of the anti-slabbing mechanism (34), for applying a slabbing opposition force to uncut material of the substrate (100).
摘要翻译：冷刨机（10）包括框架（12）和切割机构（24），切割机构（24）具有被切割成基材（100）的材料的可旋转切割器（32）。防板机构（34）联接到框架（12）并且包括向上定向的底板（36）和多个滑板（42）。滑板（42）布置在第一子组（44）和第二子组（46）中，第二子组（46）定位在向前突出的犁（40）的相对的外侧上，并且从防板的底板（36）向下机构（34），用于对未切割的基板（100）的材料施加平铺的相对力。

10. 发明申请

WO2018039482A1 NETWORK-ENABLED GRAPHICS PROCESSING MODULE 审中-公开
标题翻译：网络启用的图形处理模块
公开(公告)号：WO2018039482A1
公开(公告)日：2018-03-01
申请号：PCT/US2017/048473
申请日：2017-08-24
申请人： RADUCHEL, William J. , MCLOUGHLIN, Ian , MILLER, Timothy
发明人： RADUCHEL, William J. , MCLOUGHLIN, Ian , MILLER, Timothy
IPC分类号： G06T1/20 , G06F9/00 , H04N7/15
摘要： A system disclosed within this document is capable of improving performance in virtual computing environments, e.g., by reducing latency associated with streaming video data between a client device and an associated server system over a network. As discussed in detail below, such performance improvements can be achieved using techniques that avoid, reduce and/or overlap operations that are executed by the server system in order to render, encode, and/or transmit video data to a client device over a network. Such techniques can be used to reduce propagation and/or processing delays imposed by, for example, the server system's CPU operations, input/output (I/O), infrastructure, NIC, OS processes, among other types of hardware and software-based overheads. In various implementations, the performance enhancements can be realized at the rendering, encoding, or transmission operations performed by the server system.
摘要翻译：本文中所公开的系统能够例如通过减少与在客户端设备和相关联的服务器系统之间经由网络流式传输视频数据相关联的等待时间来提高虚拟计算环境中的性能。如以下详细讨论的，可以使用避免，减少和/或重叠由服务器系统执行的操作以便通过网络呈现，编码和/或传输视频数据到客户端设备的技术来实现这样的性能改进。这种技术可以用于减少由例如服务器系统的CPU操作，输入/输出（I / O），基础设施，NIC，OS处理以及其他类型的基于硬件和软件的处理所实施的传播和/或处理延迟开销。在各种实现中，性能增强可以在由服务器系统执行的渲染，编码或传输操作中实现。

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