专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2010077418A1 TECHNIQUES FOR INDEPENDENTLY CONTROLLING DEFLECTION, DECELERATION, AND FOCUS OF AN ION BEAM 审中-公开
标题翻译：用于独立控制离子束的偏转，减弱和聚焦的技术
公开(公告)号：WO2010077418A1
公开(公告)日：2010-07-08
申请号：PCT/US2009/062031
申请日：2009-10-26
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES , KELLERMAN, Peter, L. , RADOVANOV, Svetlana , SINCLAIR, Frank , BENVENISTE, Victor, M.
发明人： KELLERMAN, Peter, L. , RADOVANOV, Svetlana , SINCLAIR, Frank , BENVENISTE, Victor, M.
IPC分类号： H01L21/265
CPC分类号： H01J37/1471 , H01J37/12 , H01J37/3171
摘要： Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied a long the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.
摘要翻译：公开了用于独立地控制离子束的偏转，减速和聚焦的技术。在一个特定的示例性实施例中，这些技术可以被实现为用于独立地控制离子束的偏转，减速和聚焦的装置。该装置可以包括电极配置，其包括设置在离子束上方的一组上电极和设置在离子束下方的一组下电极。所述上电极组和下电极组可以围绕离子束的中心射线轨迹对称地定位。在上部电极组和下部电极组之间的电位差也可以改变长的中心射线轨迹，以反映沿着中心射线轨迹的每个点的离子束的能量，以独立地控制偏转，减速和离子束的焦点。

2. 发明申请

WO2009064871A2 TECHNIQUES FOR MEASURING AND CONTROLLING ION BEAM ANGLE AND DENSITY UNIFORMITY 审中-公开
标题翻译：测量和控制离子束角度和密度均匀性的技术
公开(公告)号：WO2009064871A2
公开(公告)日：2009-05-22
申请号：PCT/US2008/083386
申请日：2008-11-13
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , KELLERMAN, Peter, L. , PURSER, Kenneth , RADOVANOV, Svetlana , SINCLAIR, Frank , SLOCUM, John , BENVENISTE, Victor, M.
发明人： KELLERMAN, Peter, L. , PURSER, Kenneth , RADOVANOV, Svetlana , SINCLAIR, Frank , SLOCUM, John , BENVENISTE, Victor, M.
IPC分类号： H01L21/265 , H01L21/66
CPC分类号： H01J37/3171 , H01J37/244 , H01J37/304 , H01J2237/024 , H01J2237/24405 , H01J2237/24507 , H01J2237/24528 , H01J2237/30472 , H01J2237/31703
摘要： Techniques for measuring and controlling ion beam angle and density uniformity are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for measuring and controlling ion beam angle and density uniformity. The apparatus may include a measuring assembly having an opening, a cup, and at least one collector at the rear of the cup. The apparatus may further include an actuator to move the measuring assembly along an actuation path to scan an ion beam to measure and control ion beam uniformity.
摘要翻译：公开了用于测量和控制离子束角度和密度均匀性的技术。在一个特定的示例性实施例中，可以将这些技术实现为用于测量和控制离子束角度和密度均匀性的装置。该设备可以包括具有开口，杯子和杯子后部的至少一个收集器的测量组件。该设备还可以包括致动器，以沿着致动路径移动测量组件以扫描离子束以测量和控制离子束均匀性。

3. 发明申请

WO2011060258A1 SYSTEM AND METHOD FOR MANIPULATING AN ION BEAM 审中-公开
标题翻译：用于操纵离子束的系统和方法
公开(公告)号：WO2011060258A1
公开(公告)日：2011-05-19
申请号：PCT/US2010/056531
申请日：2010-11-12
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , SINCLAIR, Frank , BENVENISTE, Victor, M. , RADOVANOV, Svetlana , BUFF, James, S.
发明人： SINCLAIR, Frank , BENVENISTE, Victor, M. , RADOVANOV, Svetlana , BUFF, James, S.
IPC分类号： H01J37/153 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/153 , H01J2237/1532
摘要： A system for manipulating an ion beam (104) having a principal axis (7) Includes an upper member having a first and a second coil generally disposed in different regions of the upper member and configured to conduct, independently of each other, a first (in 808 or 810) and a second current (in 808 or 810), respectively. A lower member includes a third and a fourth coil that are generally disposed opposite to respective first and second coils and are configured to conduct, independently of each other, a third (in 812 or 814) and a fourth (in 814 or 812, respectively) current, respectively, A lens gap (306) Is defined between the upper and lower members, and configured to transmit the ion beam, wherein the first through fourth currents produce a 45 degree quadrupole field that exerts a rotational force (F5, F6) on the ion beam about its principal axis.
摘要翻译：一种用于操纵具有主轴线（7）的离子束（104）的系统包括具有第一和第二线圈的上部构件，该第一和第二线圈通常设置在上部构件的不同区域中，并且被配置为相互独立地导通第一（在808或810）和第二电流（在808或810中）。下部构件包括通常与相应的第一和第二线圈相对设置的第三和第四线圈，并且被配置为彼此独立地导通第三（在812或814）和第四（在814或812中））电流，分别在上部构件和下部构件之间限定透镜间隙（306），并且构造成透射离子束，其中第一至第四电流产生施加旋转力（F5，F6）的45度四极场，在其主轴上的离子束上。

4. 发明申请

WO2012091851A2 SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM 审中-公开
标题翻译：用于生产质量分析离子束的系统和方法
公开(公告)号：WO2012091851A2
公开(公告)日：2012-07-05
申请号：PCT/US2011/063095
申请日：2011-12-02
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , BENVENISTE, Victor, M. , SINCLAIR, Frank , RADOVANOV, Svetlana , KOO, Bon, Woong
发明人： BENVENISTE, Victor, M. , SINCLAIR, Frank , RADOVANOV, Svetlana , KOO, Bon, Woong
IPC分类号： H01J37/317 , H01J37/08 , H01J27/02
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/20 , H01J49/30 , H01J2237/055 , H01J2237/057 , H01J2237/20221
摘要： An implantation system includes an ion extraction plate having a set of apertures configured to extract ions from an ion source to form a plurality of beamlets. A magnetic analyzer is configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to a principle axis of the beamlets. A mass analysis plate includes a set of apertures wherein first ion species having a first mass/charge ratio are transmitted through the mass analysis plate and second ion species having a second mass/charge ratio are blocked by the mass analysis plate. A workpiece holder is configured to move with, respect to the mass analysis plate in a second direction perpendicular to the first direction, wherein a pattern of ions transmitted through the mass analysis plate forms a continuous ion beam current along the first direction at the substrate.
摘要翻译：植入系统包括具有一组孔口的离子提取板，其被配置为从离子源提取离子以形成多个子束。磁分析器被配置为提供磁场，以在大体上垂直于子束的主轴的第一方向上偏转子束中的离子。质量分析板包括一组孔，其中具有第一质量/荷率的第一离子种类通过质量分析板传输，具有第二质量/荷重比的第二离子种被质量分析板阻挡。工件保持器构造成在垂直于第一方向的第二方向上相对于质量分析板移动，其中透过质量分析板的离子图案在衬底处沿着第一方向形成连续的离子束电流。

5. 发明申请

WO2010093871A2 TECHNIQUES FOR IMPROVING EXTRACTED ION BEAM QUALITY USING HIGH TRANSPARENCY ELECTRODES 审中-公开
标题翻译：使用高透明电极改善提取离子束质量的技术
公开(公告)号：WO2010093871A2
公开(公告)日：2010-08-19
申请号：PCT/US2010/024025
申请日：2010-02-12
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES , BUFF, James, S. , RADOVANOV, Svetlana , KOO, John (Bon Woong) , PLATOW, Wilhelm, P. , SINCLAIR, Frank , LISCHER, D., Jeffrey , CHANEY, Craig, R. , BORICHEVSKY, Steven, C. , JAGTAP, Mayur , COBB, Eric, R. , PURSER, Kenneth, H. , PATEL, Shardul , BENVENISTE, Victor, M.
发明人： BUFF, James, S. , RADOVANOV, Svetlana , KOO, John (Bon Woong) , PLATOW, Wilhelm, P. , SINCLAIR, Frank , LISCHER, D., Jeffrey , CHANEY, Craig, R. , BORICHEVSKY, Steven, C. , JAGTAP, Mayur , COBB, Eric, R. , PURSER, Kenneth, H. , PATEL, Shardul , BENVENISTE, Victor, M.
IPC分类号： H01L21/265
CPC分类号： H01J37/3171 , H01J27/024 , H01J37/08 , H01J37/09 , H01J37/304 , H01J2237/0453 , H01J2237/0458 , H01J2237/083 , H01J2237/24542
摘要： Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.
摘要翻译：公开了使用高透明电极提高离子束质量的技术。在一个特定的示例性实施例中，技术可以被实现为用于离子注入的装置。该装置可以包括用于产生离子束的离子源，其中离子源包括具有离子束穿过其中的孔的面板。该装置还可以包括至少包括抑制电极和高透明度接地电极的一组提取电极，其中所述提取电极组可以经由面板从离子源提取离子束，并且其中高透明度接地电极可以被配置为优化抑制电极和高透明度接地电极之间的气体传导，以改善提取的离子束质量。

6. 发明申请

WO2011082163A1 SYSTEM AND METHOD FOR CONTROLLING DEFLECTION OF A CHARGED PARTICLE BEAM WITHIN A GRADED ELECTROSTATIC LENS 审中-公开
标题翻译：控制抛光静电镜中带电粒子束的偏移的系统和方法
公开(公告)号：WO2011082163A1
公开(公告)日：2011-07-07
申请号：PCT/US2010/062225
申请日：2010-12-28
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , KELLERMAN, Peter, L. , SINCLAIR, Frank , BENVENISTE, Victor, M. , LU, Jun
发明人： KELLERMAN, Peter, L. , SINCLAIR, Frank , BENVENISTE, Victor, M. , LU, Jun
IPC分类号： H01J37/12 , H01J37/147 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/1477 , H01J2237/053 , H01J2237/12 , H01J2237/24514
摘要： A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/decleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of "virtual knobs" that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine timing of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF. In another embodiment, this is done by fine tuning beam deflection while measuring the beam position and angle at the wafer plane. In a further embodiment, this is done by tuning a deflection factor to achieve a centered beam at the wafer plane.
摘要翻译：公开了一种用于控制离子束的偏转，减速和聚焦的方法和装置。该装置可以包括分级偏转/去晶化透镜，其包括设置在离子束的相对侧上的多个上下电极，以及用于调整施加到电极的电压的控制系统。使用一组“虚拟旋钮”来改变上下电极对之间的电位差，可以独立地控制离子束的偏转和减速。虚拟旋钮包括光束聚焦和剩余能量污染的控制，上游电子抑制的控制，光束偏转的控制以及光束的最终偏转角的精细定时，同时约束光束在透镜出射处的位置。在一个实施例中，这是通过微调光束偏转来实现的，同时约束在VEEF的出口处的光束位置。在另一个实施例中，这是通过在测量晶片平面处的光束位置和角度的同时微调光束偏转来完成的。在另一个实施例中，这通过调整偏转因子来实现在晶圆平面处的中心束。

7. 发明申请

WO2012091908A3 METHOD AND APPARATUS FOR CONTROLLING AN ELECTROSTATIC LENS ABOUT A CENTRAL RAY TRAJECTORY OF AN ION BEAM 审中-公开
公开(公告)号：WO2012091908A3
公开(公告)日：2012-07-05
申请号：PCT/US2011/064413
申请日：2011-12-12
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , RADOVANOV, Svetlana , KELLERMAN, Peter, L. , SINCLAIR, Frank , LINDBERG, Robert, C.
发明人： RADOVANOV, Svetlana , KELLERMAN, Peter, L. , SINCLAIR, Frank , LINDBERG, Robert, C.
IPC分类号： H01J37/12 , H01J37/15 , H01J37/317
摘要： A method of controlling deflection of a charged particle beam in an electrostatic lens (700) includes establishing a symmetrical electrostatic lens configuration comprising a plurality of electrodes (714, 716) disposed at unadjusted positions (L1) that are symmetric with respect to the central ray trajectory (702) with applied unadjusted voltages that create fields symmetric with respect to the central ray trajectory. A symmetric electric field is calculated corresponding to the set of unadjusted voltages. A plurality of lower electrodes (716) is arranged at adjusted positions (L2) that are asymmetric with respect to the central ray trajectory. A set of adjusted voltages is obtained for the plurality of lower electrodes, wherein the set of adjusted voltages corresponds to a set of respective potentials of the symmetric electric field at respective adjusted asymmetric positions. The adjusted voltages are applied to the asymmetric lens configuration when the charged particle beam passes therethrough.

8. 发明申请

WO2010065718A2 EXCITED GAS INJECTION FOR ION IMPLANT CONTROL 审中-公开
标题翻译：激发气体注入进行离子注入控制
公开(公告)号：WO2010065718A2
公开(公告)日：2010-06-10
申请号：PCT/US2009/066549
申请日：2009-12-03
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES , KOO, Bon-Woong , BENVENISTE, Victor, M. , ROWLAND, Christopher, A. , CHANEY, Craig, R. , SINCLAIR, Frank , BASSOM, Neil, J.
发明人： KOO, Bon-Woong , BENVENISTE, Victor, M. , ROWLAND, Christopher, A. , CHANEY, Craig, R. , SINCLAIR, Frank , BASSOM, Neil, J.
IPC分类号： H01L21/265
CPC分类号： H01J27/022 , H01J37/08 , H01J37/3171 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J2237/006 , H01J2237/061 , H01J2237/0815 , H01J2237/24514
摘要： An ion source that utilizes exited and/or atomic gas injection is disclosed- In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.
摘要翻译：公开了利用离开和/或原子气体注入的离子源。在离子束应用中，可以直接使用源气体，正如其通常提供的那样。可替代地或另外地，源气体在被引入到离子源室之前可以通过使其穿过远程等离子体源而被改变。这可用于创建激发态中性粒子，重离子，亚稳态分子或多电荷离子。在另一个实施例中，使用多种气体，其中一种或多种气体通过远程等离子体发生器。在某些实施例中，气体在被供应到离子源室之前在单个等离子体发生器中组合。在等离子体浸没应用中，通过一个或多个额外的气体注入位置将等离子体注入到处理室中。这些注入位置允许由处理室外部的远程等离子体源产生的额外等离子体的流入。

9. 发明申请

WO2010056823A2 MASS ANALYSIS MAGNET FOR A RIBBON BEAM 审中-公开
标题翻译：质量分析磁铁用于带状光束
公开(公告)号：WO2010056823A2
公开(公告)日：2010-05-20
申请号：PCT/US2009/064159
申请日：2009-11-12
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES , BENVENISTE, Victor, M. , BUFF, James, S. , SINCLAIR, Frank , OLSON, Joseph, C.
发明人： BENVENISTE, Victor, M. , BUFF, James, S. , SINCLAIR, Frank , OLSON, Joseph, C.
IPC分类号： H01L21/265
CPC分类号： H01J37/05 , H01J37/08 , H01J37/3171 , H01J49/30 , H01J2237/022 , H01J2237/055 , H01J2237/057 , H01J2237/083 , H01J2237/31705
摘要： A ribbon beam mass analyzer having a first and second solenoid coils and steel yoke arrangement. Each of the solenoid coils have a substantially "racetrack" configuration defining a space through which an ion ribbon beam travels. The solenoid coils are spaced apart along the direction of travel of the ribbon beam. Each of the solenoid coils generates a uniform magnetic field to accommodate mass resolution of wide ribbon beams to produce a desired image of ions generated from an ion source.
摘要翻译：具有第一和第二螺线管线圈以及钢轭装置的带状梁质量分析仪。每个电磁线圈具有基本上“跑道” 限定离子带束行进通过的空间的配置。螺线管线圈沿带状束的行进方向间隔开。每个螺线管线圈产生均匀的磁场以适应宽带状光束的质量分辨率，从而产生由离子源产生的离子的期望图像。

10. 发明申请

WO2008079921A1 ION IMPLANTATION WITH A COLLIMATOR MAGNET AND A NEUTRAL FILTER MAGNET 审中-公开
标题翻译：带有胶卷磁铁和中性滤芯的离子注入
公开(公告)号：WO2008079921A1
公开(公告)日：2008-07-03
申请号：PCT/US2007/088274
申请日：2007-12-20
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , BENVENISTE, Victor, M. , CAMPBELL, Christopher, W. , SINCLAIR, Frank
发明人： BENVENISTE, Victor, M. , CAMPBELL, Christopher, W. , SINCLAIR, Frank
IPC分类号： H01J37/317 , H01J37/147
CPC分类号： H01J37/3171 , H01J37/05 , H01J2237/0475 , H01J2237/04922
摘要： This disclosure describes an ion implanter having a collimator magnet that is configured to shape an ion beam. A first deceleration stage is configured to manipulate energy of the ion beam shaped by the collimator magnet. A neutral filter magnet is configured to filter neutral atoms from the ion beam passing through the first deceleration stage.
摘要翻译：本公开描述了具有准直器磁体的离子注入机，其被配置成使离子束成形。第一减速阶段被配置为操纵由准直器磁体成形的离子束的能量。中性滤波器磁体被配置为从穿过第一减速阶段的离子束中滤出中性原子。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式