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    • 6. 发明申请
    • OPTICALLY PUMPED SOLID-STATE LASER AND LIGHTING SYSTEM COMPRISING SAID SOLID-STATE LASER
    • 包括固体激光器的光学抽吸固体激光和照明系统
    • US20120020073A1
    • 2012-01-26
    • US13258618
    • 2010-03-15
    • Ulrich WeichmannCornelis Reinder RondaJoachim OpitzPeter Josef Schmidt
    • Ulrich WeichmannCornelis Reinder RondaJoachim OpitzPeter Josef Schmidt
    • F21V9/00H01S5/02
    • H01S3/16H01S3/1605H01S3/1606H01S3/1613H01S3/1615H01S3/1616H01S3/163H01S3/164
    • The invention relates to a solid-state laser device (1) comprising a gain medium (10) essentially having a main phase of a solid state host material (15) which is doped with rare-earth ions. According to the invention at least a portion of the rare-earth ions are Ce3+-ions (19) with at least one 4f-state (16, 17) and at least one 5d-band (18) energetically between the highest valence state and the lowest conduction state of the host material (15), wherein the highest 4f-state (17) and the bottom edge of the 5d-band (18) have a first energy-level distance (Δ1) and the lowest 4f-state (16) and the upper edge of the 5d-band (18) have a second energy-level distance (Δ2), wherein the host material (15) is selected such that the resulting gain medium (10) has an energy range (20) devoid of unoccupied states for disabling excited state absorption, the energy range (20) is located between a lower energy (21) which is by the value of the first energy level distance (Δ1) above the bottom edge of the 5d-band (18) and a higher energy (22) which is by the value of the second energy level distance (Δ2) above the upper edge of the 5d-band (18). The invention further relates to a corresponding lighting system comprising at least one solid-state laser device (1).
    • 本发明涉及一种固态激光器件(1),其包括基本上具有掺杂有稀土离子的固态主体材料(15)的主相的增益介质(10)。 根据本发明,稀土离子的至少一部分是Ce 3+(19),其具有至少一个4f状态(16,17)和至少一个5d带(18),其处于最高价态和 主体材料(15)的最低导通状态,其中最高4f状态(17)和5d带(18)的底边具有第一能级距离(&Dgr; 1)和最低4f- 状态(16)和5d带(18)的上边缘具有第二能级距离(&Dgr; 2),其中选择主体材料(15)使得所得增益介质(10)具有能量 (20)不具有用于禁用激发态吸收的未占用状态,所述能量范围(20)位于较低能量(21)之间,所述较低能量(21)是所述第一能量级距离(&Dgr; 1) 5d带(18)和较高能量(22),其以5d带(18)的上边缘之上的第二能级距离(&Dgr; 2)的值。 本发明还涉及一种包括至少一个固体激光装置(1)的对应照明系统。
    • 9. 发明申请
    • SYSTEM FOR AND METHOD OF HEATING OBJECTS IN A PRODUCTION LINE
    • 在生产线上加热物体的系统和方法
    • US20100230863A1
    • 2010-09-16
    • US12518903
    • 2007-12-17
    • Holger MoenchJohannes BaierJaione Bengoechea ApezteguiaUlrich WeichmannSerge Monteix
    • Holger MoenchJohannes BaierJaione Bengoechea ApezteguiaUlrich WeichmannSerge Monteix
    • H05B6/00B29B13/02
    • B29B13/024B29C49/06B29C49/68B29C2035/0822B29C2035/0838B29K2067/00B29K2105/258H01S5/18388H01S5/426
    • A system and method (10) for heating objects (O) during a thermal treatment process in a production line (P) is described. The system (10) comprises a transport system (11), a minor arrangement (201, 202, 203, 204, 205, 206) comprising a first mirror surface (21, 21′, 21″) and a second minor surface (22, 22′, 22″) arranged at opposite sides, so that the objects (O) may be transported between the minor surfaces (21, 22, 21′, 22′, 21″, 22″) along the production line and a radiation device (30) comprising a number of lasers for generating light (L). The radiation device (30) and the mirror arrangement (201, 202, 203, 204, 205, 206) are constructed such that the main direction (R) of light (L) that enters the mirror arrangement (201, 202, 203, 204, 205, 206) is directed towards the first mirror surface (21, 21′, 21″) at an angle to the production line (P), and the light (L) subsequently undergoes multiple reflections between the mirror surfaces (21, 22, 21′, 22′, 21″, 22″) so that a series of multiple reflections of the light (L) travels in the transport direction (OT) along at least a section of the minor surface (21, 22, 21′, 22′, 21″, 22″) or travels against the transport direction (OT) along at least a section of the minor surface (21, 22, 21′, 22′, 21″, 22″) and heats the objects (O) being transported between the minor surfaces (21, 22, 21′, 22′, 21″, 22″).
    • 描述了用于在生产线(P)中的热处理过程期间加热物体(O)的系统和方法(10)。 所述系统(10)包括运输系统(11),包括第一镜面(21,21',21“)和第二次表面(22)的小布置(201,202,203,204,205,206) ,22',22“),使得物体(O)可沿着生产线在小表面(21,22,21',22',21”,22“)之间输送,并且辐射 装置(30)包括多个用于产生光(L)的激光器。 辐射装置(30)和反射镜装置(201,202,203,204,205,206)被构造为使得进入反射镜装置(201,202,205,206)的光(L)的主方向(R) 204,205,206)以与生产线(P)成一定角度指向第一镜面(21,21',21“),并且光(L)随后在镜面(21,21',21”)之间经历多次反射, 22,21',22“,21”,22“),使得光(L)的一系列多次反射沿着所述次表面(21,22,21)的至少一部分在输送方向(OT) ',22',21“,22”)或沿着所述小表面(21,22,21',22',21“,22”)的至少一部分沿着输送方向(OT)行进并加热物体 (21,22,21',22“,21”,22“)之间输送(O)。
    • 10. 发明申请
    • All-Solid State Uv Laser System
    • 全固态激光系统
    • US20080159339A1
    • 2008-07-03
    • US11816285
    • 2006-02-07
    • Ulrich WeichmannHolger Moench
    • Ulrich WeichmannHolger Moench
    • H01S5/06
    • H01S5/183B82Y20/00G03F7/7005H01S3/109H01S5/141H01S5/34333H01S5/423
    • The present invention relates to an all-solid state UV laser system comprising at least one semiconductor laser (10) in a VECSEL configuration. The gain structure (3) in this semiconductor laser (10) emits fundamental radiation in a wavelength range which can be frequency doubled to wavelengths in the UV region. The frequency doubling is achieved with a nonlinear optical crystal (6) for second harmonic generation arranged inside the extended cavity of the semiconductor laser (10). By electrically pumping of the semiconductor laser wavelengths below 200 nm can be efficiently generated with already known semiconductor materials like GaN. The proposed UV laser system is compact and can be fabricated and operated at low costs compared to UV excimer lasers.
    • 本发明涉及一种全固态UV激光系统,其包括VECSEL配置中的至少一个半导体激光器(10)。 该半导体激光器(10)中的增益结构(3)发射波长范围内的基本辐射,该波长范围可以被倍频到UV区域中的波长。 利用布置在半导体激光器(10)的扩展腔内部的用于二次谐波产生的非线性光学晶体(6)来实现倍频。 通过电泵浦半导体激光器,可以利用已知的诸如GaN的半导体材料有效地产生低于200nm的波长。 所提出的紫外激光系统是紧凑的,并且与UV准分子激光器相比可以以低成本制造和操作。