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    • 8. 发明申请
    • Device and method for generating images
    • 用于生成图像的设备和方法
    • US20060257140A1
    • 2006-11-16
    • US10544406
    • 2003-11-08
    • Ulrich SegerUwe ApelJens SchickBjorn AbelMichael BurgJoerg Heerlein
    • Ulrich SegerUwe ApelJens SchickBjorn AbelMichael BurgJoerg Heerlein
    • G03B19/00
    • H04N7/18B60Q1/14H04N5/33
    • A method and a device for generating images in a motor vehicle. An infrared-sensitive camera generates images of the surroundings of the motor vehicle, line by line in scanning lines. The image recording region of the infrared-sensitive camera is illuminated in pulsed fashion by at least one emission source that radiates in the infrared spectral region. The recording of the scanning lines is carried out synchronized in time with the pulsed illumination. In a first example embodiment, the recording of scanning lines of an infrared-sensitive CMOS camera is synchronized in time with a laser diode emitting in the near infrared spectral region. In a second example embodiment, the synchronization in time of the recording of scanning lines of the infrared-sensitive CMOS camera with the pulsed illumination is performed autonomously by the CMOS camera by evaluation of at least one recorded scanning line.
    • 一种用于在机动车辆中产生图像的方法和装置。 红外线敏感摄像机在扫描线上逐行生成机动车辆周围的图像。 红外线敏感照相机的图像记录区域以脉冲的方式通过辐射在红外光谱区域中的至少一个发射源照射。 扫描线的记录与脉冲照明在时间上同步进行。 在第一示例性实施例中,红外敏感CMOS照相机的扫描线的记录与在近红外光谱区域中发射的激光二极管的时间同步。 在第二示例性实施例中,通过评估至少一条记录的扫描线,通过CMOS照相机自主地执行用脉冲照明记录红外线敏感CMOS照相机的扫描线的时间同步。
    • 9. 发明授权
    • Circuit and method for rapid reading of an image cell
    • 用于快速读取图像单元的电路和方法
    • US06665011B1
    • 2003-12-16
    • US09147945
    • 1999-06-08
    • Ulrich SegerUwe ApelBernd HofflingerHeinz-Gerd Graf
    • Ulrich SegerUwe ApelBernd HofflingerHeinz-Gerd Graf
    • H04N5335
    • H04N9/045H04N5/374
    • A circuitry for high-speed reading of a video cell for a video pickup chip including a plurality of such video cells disposed in the form of a two-dimensional array, and a read-out logic designed for imaging a high input signal dynamic volume onto a reduced output signal dynamic volume, wherein the photosensitive element of the video cell is connected to the first main electrode of a first MOS transistor (M0) and to the gate of a second MOS transistor (M1) such that the gate and the other main electrode of the first MOS transistor (M0) are short-circuited and applied to an invariable potential (Vpp) so as to achieve a logarithmic characteristic line, and that an output signal amplifier is connected to the second main electrode of the second MOS transistor (M1). Moreover, a method of high speed reading of this video cell is described. The invention excels itself by the provision that a further MOS transistor (Mr1) of the same charge carrier type, which is connected in parallel with the first MOS transistor (M0), is provided and has a main electrode short-circuited to the first main electrode of the first MOS transistor (M0), and that a reset voltage pulse is applicable to the gate electrode of this further MOS transistor (Mr1).
    • 一种用于高速读取用于视频拾取芯片的视频单元的电路,包括以二维阵列的形式设置的多个这样的视频单元,以及设计用于将高输入信号动态体积成像到 减小的输出信号动态音量,其中视频单元的感光元件连接到第一MOS晶体管(M0)的第一主电极并连接到第二MOS晶体管(M1)的栅极,使得栅极和另一个主体 第一MOS晶体管(M0)的电极短路并施加到不变电位(Vpp),以实现对数特性线,并且输出信号放大器连接到第二MOS晶体管的第二主电极( M1)。 此外,描述了该视频单元的高速读取的方法。 本发明的优点在于提供了与第一MOS晶体管(M0)并联连接的另一个同样的载流子型的MOS晶体管(Mr1),并且具有与第一主体短路的主电极 第一MOS晶体管(M0)的电极,并且复位电压脉冲可应用于该另一MOS晶体管(Mr1)的栅电极。
    • 10. 发明授权
    • MOS-transistor for a photo cell
    • 用于光电池的MOS晶体管
    • US06489658B2
    • 2002-12-03
    • US09337032
    • 1999-06-28
    • Harald RichterBernd HöfflingerUwe ApelUlrich Seger
    • Harald RichterBernd HöfflingerUwe ApelUlrich Seger
    • H01L2976
    • H01L27/14609
    • The invention relates to a MOS transistor for a photo cell, comprising a semiconductor substrate on which a gate electrode, a drain electrode and a photosensitive source region are configured. An oxide layer is arranged between the gate electrode and the substrate, and in the active region of the MOS transistor this oxide layer is formed as thin oxide film while it is configured as thick oxide film in a passive region. The inventive transistor is distinguished by the provisions that the gate electrode comprises a closed annular section in the active region of the MOS transistor, and that either the drain electrode or the photosensitive source region is arranged within the annular section of the gate electrode so that current will only flow in the active region.
    • 本发明涉及一种用于光电池的MOS晶体管,包括其上配置有栅电极,漏电极和感光源区的半导体衬底。 在栅电极和衬底之间设置氧化物层,在MOS晶体管的有源区中,氧化物层形成为氧化薄膜,同时被配置为被动区域中的厚氧化膜。 本发明的晶体管的特征在于栅电极包括在MOS晶体管的有源区中的封闭环形部分,漏极电极或光敏源区域设置在栅电极的环形部分内,使得电流 只会流入活跃区域。