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1. 发明申请

US20110061812A1 Apparatus and Methods for Cyclical Oxidation and Etching 审中-公开
公开(公告)号：US20110061812A1
公开(公告)日：2011-03-17
申请号：US12720926
申请日：2010-03-10
申请人： Udayan Ganguly , Yoshitaka Yokota , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Wei Liu , Johanes F. Swenberg , Jose A. Marin , Aijit Balakrishna , Jacob Newman , Stephen C. Hickerson
发明人： Udayan Ganguly , Yoshitaka Yokota , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Wei Liu , Johanes F. Swenberg , Jose A. Marin , Aijit Balakrishna , Jacob Newman , Stephen C. Hickerson
IPC分类号： H01L21/465
CPC分类号： H01L21/0223 , H01L21/67109 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L21/76232 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

2. 发明申请

US20110061810A1 Apparatus and Methods for Cyclical Oxidation and Etching 审中-公开
标题翻译：循环氧化和蚀刻的装置和方法
公开(公告)号：US20110061810A1
公开(公告)日：2011-03-17
申请号：US12720957
申请日：2010-03-10
申请人： Udayan Ganguly , Joseph M. Ranish , Aaron M. Hunter , Jing Tang , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Johanes F. Swenberg , Anchuan Wang , Nitin K. Ingle , Manish Hemkar , Jose A. Marin
发明人： Udayan Ganguly , Joseph M. Ranish , Aaron M. Hunter , Jing Tang , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Johanes F. Swenberg , Anchuan Wang , Nitin K. Ingle , Manish Hemkar , Jose A. Marin
IPC分类号： H01L21/3065
CPC分类号： H01L21/67115 , H01L21/0223 , H01L21/67109 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L21/76232 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
摘要翻译：本文描述了用于制造适用于窄间距应用的半导体器件的装置和方法及其制造方法。公开了通过氧化材料层的表面以形成氧化物层来形成和/或形成材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并周期性地重复氧化和去除工艺，直到材料层形成所需的形状。在一些实施例中，材料层可以是半导体器件的浮置栅极。

3. 发明申请

US20110065276A1 Apparatus and Methods for Cyclical Oxidation and Etching 审中-公开
公开(公告)号：US20110065276A1
公开(公告)日：2011-03-17
申请号：US12720942
申请日：2010-03-10
申请人： Udayan Ganguly , Joseph M. Ranish , Aaron M. Hunter , Jing Tang , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Wei Liu , Johanes F. Swenberg , Shiyu Sun
发明人： Udayan Ganguly , Joseph M. Ranish , Aaron M. Hunter , Jing Tang , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Wei Liu , Johanes F. Swenberg , Shiyu Sun
IPC分类号： H01L21/311 , H01L21/3065
CPC分类号： H01L21/76232 , H01L21/0223 , H01L21/67109 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

4. 发明授权

US08871645B2 Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof 有权
标题翻译：适用于窄间距应用的半导体器件及其制造方法
公开(公告)号：US08871645B2
公开(公告)日：2014-10-28
申请号：US12558370
申请日：2009-09-11
申请人： Udayan Ganguly , Yoshita Yokota , Jing Tang , Sunderraj Thirupapuliyur , Christopher Sean Olsen , Shiyu Sun , Tze Wing Poon , Wei Liu , Johanes Swenberg , Vicky U. Nguyen , Swaminathan Srinivasan , Jacob Newman
发明人： Udayan Ganguly , Yoshita Yokota , Jing Tang , Sunderraj Thirupapuliyur , Christopher Sean Olsen , Shiyu Sun , Tze Wing Poon , Wei Liu , Johanes Swenberg , Vicky U. Nguyen , Swaminathan Srinivasan , Jacob Newman
IPC分类号： H01L21/311 , H01L27/115 , H01L21/67 , H01L21/762
CPC分类号： H01L29/788 , H01L21/67167 , H01L21/67207 , H01L21/76232 , H01L27/11521
摘要： Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
摘要翻译：适用于窄间距应用的半导体器件及其制造方法在本文中描述。在一些实施例中，半导体器件可以包括具有接近浮动栅极的基极的第一宽度的浮动栅极，该第一宽度大于靠近浮动栅极顶部的第二宽度。在一些实施例中，成形材料层的方法可以包括（a）氧化材料层的表面以以初始速率形成氧化物层; （b）当氧化速率为初始速率的约90％或更低时终止氧化物层的形成; （c）通过蚀刻工艺去除至少一些氧化物层; 和（d）重复（a）到（c）直到材料层形成所需的形状。在一些实施例中，材料层可以是半导体器件的浮置栅极。

5. 发明申请

US20100062603A1 SEMICONDUCTOR DEVICES SUITABLE FOR NARROW PITCH APPLICATIONS AND METHODS OF FABRICATION THEREOF 有权
标题翻译：适用于窄幅倾斜应用的半导体器件及其制造方法
公开(公告)号：US20100062603A1
公开(公告)日：2010-03-11
申请号：US12558370
申请日：2009-09-11
申请人： Udayan Ganguly , Yoshita Yokota , Jing Tang , Sunderraj Thirupapuliyur , Christopher Sean Olsen , Shiyu Sun , Tze Wing Poon , Wei Liu , Johanes Swenberg , Vicky U. Nguyen , Swaminathan Srinivasan , Jacob Newman
发明人： Udayan Ganguly , Yoshita Yokota , Jing Tang , Sunderraj Thirupapuliyur , Christopher Sean Olsen , Shiyu Sun , Tze Wing Poon , Wei Liu , Johanes Swenberg , Vicky U. Nguyen , Swaminathan Srinivasan , Jacob Newman
IPC分类号： H01L21/311 , H01L21/28
CPC分类号： H01L29/788 , H01L21/67167 , H01L21/67207 , H01L21/76232 , H01L27/11521
摘要： Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
摘要翻译：适用于窄间距应用的半导体器件及其制造方法在本文中描述。在一些实施例中，半导体器件可以包括具有接近浮动栅极的基极的第一宽度的浮动栅极，该第一宽度大于靠近浮动栅极顶部的第二宽度。在一些实施例中，成形材料层的方法可以包括（a）氧化材料层的表面以以初始速率形成氧化物层; （b）当氧化速率为初始速率的约90％或更低时终止氧化物层的形成; （c）通过蚀刻工艺去除至少一些氧化物层; 和（d）重复（a）到（c）直到材料层形成所需的形状。在一些实施例中，材料层可以是半导体器件的浮置栅极。

6. 发明授权

US6091752A Quantum well laser with a composition-graded interface at the quantum well 失效
标题翻译：量子阱中具有组成梯度界面的量子阱激光器
公开(公告)号：US6091752A
公开(公告)日：2000-07-18
申请号：US40052
申请日：1998-03-17
申请人： Xiaoquang He , Swaminathan Srinivasan
发明人： Xiaoquang He , Swaminathan Srinivasan
IPC分类号： H01S5/34 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/3413
摘要： Quantum well lasers are herein made with purposely-graded interfaces which control the interdiffusion of atoms during high temperature processing. The result is a predictably-graded, large interface between the quantum well and the waveguide layers to either side thereof. The process is highly controllable and produces unique structures which exhibit surprisingly high power in a repeatable manner.
摘要翻译：量子阱激光器在此制成具有预定梯度的界面，其控制在高温处理期间原子的相互扩散。结果是量子阱和波导层的任一侧之间的可预测梯度的大的界面。该方法是高度可控的并且以可重复的方式产生出惊人的高功率的独特结构。

7. 发明授权

US08802522B2 Methods to adjust threshold voltage in semiconductor devices 有权
标题翻译：调整半导体器件中阈值电压的方法
公开(公告)号：US08802522B2
公开(公告)日：2014-08-12
申请号：US13190012
申请日：2011-07-25
申请人： Michael G. Ward , Igor V. Peidous , Sunny Chiang , Yen B. Ta , Andrew Darlak , Peter I. Porshnev , Swaminathan Srinivasan
发明人： Michael G. Ward , Igor V. Peidous , Sunny Chiang , Yen B. Ta , Andrew Darlak , Peter I. Porshnev , Swaminathan Srinivasan
IPC分类号： H01L29/94
CPC分类号： H01L21/823842 , H01J37/32412 , H01L21/28088 , H01L21/28202 , H01L21/28229 , H01L29/78
摘要： Methods for forming a device on a substrate are provided herein. In some embodiments, a method of forming a device on a substrate may include providing a substrate having a partially fabricated first device disposed on the substrate, the first device including a first film stack comprising a first dielectric layer and a first high-k dielectric layer disposed atop the first dielectric layer; depositing a first metal layer atop the first film stack; and modifying a first upper surface of the first metal layer to adjust a first threshold voltage of the first device, wherein the modification of the first upper surface does not extend through to a first lower surface of the first metal layer.
摘要翻译：本文提供了在基板上形成器件的方法。在一些实施例中，在衬底上形成器件的方法可以包括提供具有设置在衬底上的部分制造的第一器件的衬底，第一器件包括第一膜堆叠，其包括第一介电层和第一高k电介质层设置在第一电介质层的顶部; 在第一薄膜叠层顶上沉积第一金属层; 以及修改所述第一金属层的第一上表面以调整所述第一器件的第一阈值电压，其中所述第一上表面的修改不延伸穿过所述第一金属层的第一下表面。

8. 发明申请

US20130243971A1 Apparatus and Process for Atomic Layer Deposition with Horizontal Laser 审中-公开
标题翻译：用水平激光原子层沉积的装置和工艺
公开(公告)号：US20130243971A1
公开(公告)日：2013-09-19
申请号：US13420164
申请日：2012-03-14
申请人： David Thompson , Pravin K. Narwankar , Swaminathan Srinivasan , Sukti Chatterjee , Abhilash Mayur , Kashif Maqsood
发明人： David Thompson , Pravin K. Narwankar , Swaminathan Srinivasan , Sukti Chatterjee , Abhilash Mayur , Kashif Maqsood
IPC分类号： C23C16/455 , C23C16/56
CPC分类号： C23C16/45551 , C23C16/45548 , C23C16/483
摘要： Provided are atomic layer deposition apparatus and methods including a gas distribution plate and at least one laser source emitting a laser beam adjacent the gas distribution plate to activate gaseous species from the gas distribution plate. Also provided are gas distribution plates with elongate gas injector ports where the at least one laser beam is directed along the length of the elongate gas injectors.
摘要翻译：提供了原子层沉积装置和方法，包括气体分配板和发射与气体分配板相邻的激光束的至少一个激光源，以激活来自气体分配板的气态物质。还提供了具有细长气体注入器端口的气体分配板，其中至少一个激光束沿着细长气体喷射器的长度被引导。

9. 发明授权

US06178189B1 Multi-layer semiconductor devices with stress-relief profiles 失效
标题翻译：具有应力释放特性的多层半导体器件
公开(公告)号：US06178189B1
公开(公告)日：2001-01-23
申请号：US09304441
申请日：1999-05-03
申请人： Swaminathan Srinivasan , Rushikesh M. Patel
发明人： Swaminathan Srinivasan , Rushikesh M. Patel
IPC分类号： H01S5024
CPC分类号： H01S5/4031 , H01S5/0207 , H01S5/02256 , H01S5/22 , H01S5/3201
摘要： Multi-layer, semiconductor devices are configured to reduce stress by the removal of much of the structure which does not actually contribute to device performance. In one embodiment, trough between mesas which define light emitting facets in a laser diode bar are etched well into the substrate to remove all layers of different compositions there. In another embodiment, troughs are also etched in the backside of the substrate of a laser diode structure where the troughs are aligned along axes perpendicular to the axes of the mesas. The removal of stress permits more accurate alignment of the multiple facets along a single axis when the laser bar is bonded to a heat sink. The accurate alignment minimizes the placement constraints on the position of a microlens for achieving maximum power output and coupling efficiency for optical fibers coupled to the microlens.
摘要翻译：多层半导体器件被配置为通过去除实际上对器件性能没有贡献的结构的大部分来减少应力。在一个实施例中，在激光二极管条中限定光发射小面的台面之间的槽被很好地蚀刻到衬底中以去除其中不同组成的所有层。在另一个实施例中，还在激光二极管结构的衬底的背面蚀刻槽，其中槽沿着与台面的轴线垂直的轴线对齐。当激光条被接合到散热器时，去除应力允许沿着单个轴的多个面的更准确的对准。准确的对准使得微透镜的位置上的放置约束最小化，以实现耦合到微透镜的光纤的最大功率输出和耦合效率。

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