会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明申请
    • METHOD FOR TREATING TUNGSTEN CARBIDE PARTICLES
    • 用于处理碳化钨颗粒的方法
    • WO2004085690A1
    • 2004-10-07
    • PCT/CA2004/000391
    • 2004-03-15
    • INVEGYRE INC.CARON, PaulTREMBLAY, Alain
    • CARON, PaulTREMBLAY, Alain
    • C22C29/08
    • C01B32/949
    • A method for the treatment of tungsten carbide is provided. The starting material contains tungsten carbide particles of a W-C system represented on a phase diagram showing a monophasic domain of a γ phase having a face-centered cubic structure, upwardly delimited by a liquidus line. The particles are subjected to a homogenization treatment in the monophasic domain, and may be subsequently melted to be spheroidized. They are then quenched to freeze at ambient temperature the monophased structure. Optionally, at least one alloying element may be added to the starting material to enlarge the monophasic domain, thereby increasing the hardenability of the monophased particles.
    • 提供了一种用于处理碳化钨的方法。 起始材料包含W-C系统的碳化钨颗粒,在相图上表示,显示由液相线向上界定的具有面心立方结构的γ相的单相区域。 颗粒在单相区域进行均质处理,随后可以熔化成球化。 然后将它们淬灭以在环境温度下冻结单相结构。 任选地,可以将至少一种合金元素添加到原料中以扩大单相结构域,从而提高单相颗粒的淬透性。