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    • 1. 发明申请
    • ELECTRON TUNNELING DEVICE
    • 电子隧道设备
    • WO2002095920A1
    • 2002-11-28
    • PCT/US2002/015417
    • 2002-05-17
    • UNIVERSITY TECHNOLOGY CORPORATIONELIASSON, Blake, J.MODDEL, Garret
    • ELIASSON, Blake, J.MODDEL, Garret
    • H02N6/00
    • H01L31/06B82Y20/00H01L31/035236H01L31/101H01L45/00Y02E10/50
    • The electron tunneling device (110) includes first and second non-insulating layers (112 and 114) spaced apart such that a given voltage can be provided therebetween. The device also includes an arrangement disposed between the non-insulating layers and configured to serve as a transport of electrons between the non-insulating layers. This arrangement includes a first layer (116) of an amorphous material such that using only the first layer of amorphous material in the arrangement would result in a given value of a parameter in the transport of electrons, with respect to the given voltage. The arrangement further includes a second layer (118) of material, which is configured to cooperate with the first layer (116) of amorphous material such that the transport of electrons includes, at least in part, transport by tunneling, and such that the parameter, with respect to the given voltage, is increased above the given value of the parameter.
    • 电子隧穿装置(110)包括间隔开的第一和第二非绝缘层(112和114),使得可以在其间提供给定的电压。 该装置还包括设置在非绝缘层之间并被配置为用作非绝缘层之间的电子传输的布置。 这种布置包括非晶材料的第一层(116),使得仅使用该布置中的第一非晶材料层将导致相对于给定电压的电子传输中的参数的给定值。 该装置还包括材料的第二层(118),其被配置为与非晶材料的第一层(116)协作,使得电子的传输至少部分地包括通过隧道传输,并且使得参数 ,相对于给定的电压,增加到高于参数的给定值。
    • 2. 发明申请
    • APPLICATIONS FOR AND TUNNELING DEVICE
    • 应用和隧道装置
    • WO2002095832A2
    • 2002-11-28
    • PCT/US2002/015461
    • 2002-05-16
    • UNIVERSITY TECHNOLOGY CORPORATIONMODDEL, GarretELIASSON, Blake, J.
    • MODDEL, GarretELIASSON, Blake, J.
    • H01L29/205
    • H01L27/1446B82Y10/00B82Y15/00B82Y20/00H01L29/7311H01L29/7606H01L29/82H01L31/08H01L31/101H01L33/0004H01L33/0037H01L39/22H01L45/00
    • A detector for detecting electromagnetic radiation incident thereon over a desired range of frequencies exhibits a given responsivity and includes an output and first and second non-insulating layers, which layers are spaced apart such that a given voltage can be applied there across. The first non-insulating layer is formed of a metal, and the first and second non-insulating layers are configured to form an antenna structure for receiving electromagnetic radiation over the desired range of frequencies. The detector further includes an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between the first and second non-insulating layers as a result of the electromagnetic radiation being received at the antenna structure. The arrangement includes at least a first layer of an amorphous material such that the transport of electrons includes, at least in part, transport by means of resonant tunneling, and such that at least a portion of the electromagnetic radiation incident on the antenna is converted at the output to an electrical signal having an intensity which depends on the give responsivity.
    • 用于检测在期望频率范围上入射到其上的电磁辐射的检测器具有给定的响应性,并且包括输出和第一和第二非绝缘层,这些层被间隔开,使得可以在其上施加给定的电压。 第一非绝缘层由金属形成,并且第一和第二非绝缘层被配置为形成用于在期望的频率范围上接收电磁辐射的天线结构。 检测器还包括设置在第一和第二非绝缘层之间并且被配置为作为电磁辐射在天线结构处被接收的结果而在第一和第二非绝缘层之间的电子传输的布置。 该装置包括至少第一层非晶材料,使得电子的传输至少部分地通过谐振隧道传输,并且使得入射在天线上的至少一部分电磁辐射被转换为 输出到具有取决于给出响应度的强度的电信号。
    • 4. 发明申请
    • HOT ELECTRON TRANSISTOR
    • 热电子晶体管
    • WO2005106927A2
    • 2005-11-10
    • PCT/US2005/014249
    • 2005-04-25
    • ESTES, Michael, J.ELIASSON, Blake, J.
    • ESTES, Michael, J.ELIASSON, Blake, J.
    • H01L21/00
    • H01L45/00H01L29/7606
    • A hot electron transistor includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the emitter and base electrodes. The first tunneling structure includes at least a first amorphous insulating layer and a different, second insulating layer such that the transport of electrons includes transport by means of tunneling. The transistor further includes a second tunneling structure disposed between the base and collector electrodes. The second tunneling structure serves as a transport of at least a portion of the previously mentioned electrons between the base and collector electrodes by means of ballistic transport such that the portion of the electrons is collected at the collector electrode. An associated method for reducing electron reflection at interfaces in a thin-film transistor is also disclosed.
    • 热电子晶体管包括发射极,基极,集电极和第一隧道结构,其布置并用作发射极和基极之间的电子传输。 第一隧道结构包括至少第一非晶绝缘层和不同的第二绝缘层,使得电子的传输包括通过隧道传输。 晶体管还包括设置在基极和集电极之间的第二隧道结构。 第二隧道结构用作通过弹道传输使得电子部分在集电极处收集的基极和集电极之间的至少一部分前述电子的传输。 还公开了一种用于在薄膜晶体管的界面处减少电子反射的相关方法。