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1. 发明申请

WO2016001365A1 NANOSCALE DEVICE COMPRISING AN ELONGATED CRYSTALLINE NANOSTRUCTURE 审中-公开
标题翻译：纳米结构纳米结构纳米结构
公开(公告)号：WO2016001365A1
公开(公告)日：2016-01-07
申请号：PCT/EP2015/065110
申请日：2015-07-02
申请人： UNIVERSITY OF COPENHAGEN
发明人： KROGSTRUP, Peter , JESPERSEN, Thomas Sand , MARCUS, Charles M. , NYGÅRD, Jesper
IPC分类号： H01L39/22 , H01L39/24 , H01L39/06 , H01L29/06 , H01L29/66 , B82Y10/00 , B82Y40/00 , H01L29/41 , H01L29/43 , H01L29/45
CPC分类号： H01L39/02 , B82Y10/00 , B82Y40/00 , C23C14/28 , C30B11/12 , C30B23/025 , C30B23/066 , C30B29/62 , H01L29/0673 , H01L29/413 , H01L29/437 , H01L29/66469 , H01L39/025 , H01L39/125 , H01L39/221 , H01L39/223 , H01L39/228 , H01L39/2432 , H01L39/2493 , Y10S977/762 , Y10S977/81 , Y10S977/891 , Y10S977/938 , Y10S977/943
摘要： The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), preferably made of Indium Arsenide, having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material, preferably Aluminium, covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material, preferably Vanadium, covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.
摘要翻译：本公开内容涉及包括细长结晶纳米结构的纳米级器件，例如纳米线晶体，纳米晶须晶体或纳米棒晶体及其制造方法。一个实施方案涉及纳米级装置，其包括细长结晶半导体纳米结构，例如纳米线（晶体）或纳米晶须（晶体）或纳米棒（晶体），优选由砷化铟制成，具有多个基本平面的侧面，结晶结构覆盖至少一部分一个或多个所述侧面的超导体材料的第一小面层，优选为铝，以及覆盖第一小面层的至少一部分的超导材料，优选为钒的第二小面层，所述第二刻面层的超导体材料与所述第一刻面层的超导体材料不同，其中所述半导体纳米结构的晶体结构与所述两个晶体结构之间的界面上的所述第一刻面层的晶体结构外延匹配。

2. 发明申请

WO2016000836A1 A SEMICONDUCTOR JOSEPHSON JUNCTION AND A TRANSMON QUBIT RELATED THERETO 审中-公开
标题翻译：一个SEMICONDUCTOR JOSEPHSON JUNCTION AND A TRANSMON QUBIT RELATED THERETO
公开(公告)号：WO2016000836A1
公开(公告)日：2016-01-07
申请号：PCT/EP2015/054522
申请日：2015-03-04
申请人： UNIVERSITY OF COPENHAGEN
发明人： MARCUS, Charles , KROGSTRUP, Peter , JESPERSEN, Thomas Sand , NYGÅRD, Jesper , PETERSSON, Karl , LARSEN, Thorvald , KUEMMETH, Ferdinand
IPC分类号： H01L29/41 , H01L29/66 , H01L29/06 , H01L29/43 , H01L29/45 , H01L39/22 , H01L39/24 , H01L39/06 , B82Y10/00 , B82Y40/00 , H01L39/02 , H01L39/08
CPC分类号： H01L39/02 , B82Y10/00 , B82Y40/00 , C23C14/28 , C30B11/12 , C30B23/025 , C30B23/066 , C30B29/62 , H01L29/0673 , H01L29/413 , H01L29/437 , H01L29/66469 , H01L39/025 , H01L39/125 , H01L39/221 , H01L39/223 , H01L39/228 , H01L39/2432 , H01L39/2493 , Y10S977/762 , Y10S977/81 , Y10S977/891 , Y10S977/938 , Y10S977/943
摘要： The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor (Al) and semiconductor (InAs) materials and a weak link, wherein the semiconductor weak link is formed by a semiconductor segment of the elongated hybrid nanostructure where the superconductor material has been removed.
摘要翻译：本公开内容涉及基于半导体的约瑟夫逊结及其在量子计算领域中的应用，特别是可调谐的约瑟夫逊结装置已经被用于构建可门控的跨越量子比特。一个实施方案涉及包含包含超导体（Al）和半导体（InAs）材料的细长混合纳米结构和弱连接的约瑟夫逊结，其中半导体弱连接由超导材料已经被延伸的混合纳米结构的半导体部分形成除去。

3. 发明公开

EP3314045A1 NETWORK OF NANOSTRUCTURES AS GROWN ON A SUBSTRATE 审中-公开
标题翻译：在衬底上生长的纳米结构网络
公开(公告)号：EP3314045A1
公开(公告)日：2018-05-02
申请号：EP16732600.8
申请日：2016-06-27
申请人： The University of Copenhagen
发明人： KROGSTRUP, Peter , MARCUS, Charles , JESPERSEN, Thomas Sand , NYGÅRD, Jesper
IPC分类号： C30B11/12 , C30B29/60
CPC分类号： C30B11/12 , C30B29/60 , C30B29/66 , H01L21/02603
摘要： The present disclosure relates to a method for producing a network of interconnected nanostructures comprising the steps of: providing a substantially plane substrate; growing a plurality of elongated nanostructures from the substrate; kinking the growth direction of at least a part of the nanostructures such that at least part of the kinked nanostructures are growing in a network plane parallel to the substrate, and creating one or more network(s) of interconnected kinked nanostructures in the network plane, wherein a dielectric support layer is provided below the network plane to support said network(s) of interconnected nanostructures.

4. 发明申请

WO2017153388A1 A MANUFACTURING METHOD FOR A NANOSTRUCTURED DEVICE USING A SHADOW MASK 审中-公开
标题翻译：一种使用阴影掩模的纳米结构器件的制造方法
公开(公告)号：WO2017153388A1
公开(公告)日：2017-09-14
申请号：PCT/EP2017/055291
申请日：2017-03-07
申请人： UNIVERSITY OF COPENHAGEN
发明人： KROGSTRUP, Peter , MARCUS, Charles
IPC分类号： H01L39/22 , B82Y40/00 , C23C14/14 , C30B29/60 , H01L39/24 , G06N99/00
摘要： The present disclosure relates to a device and method for forming efficient quantum devices, in particular quantum devices that have not been contaminated in ex-situ processes. In particular the presently disclosed method can be applied for manufacturing of a Josephson junction which is an element in a tuneable superconducting qubit. One embodiment relates to a method for in-situ production of a barrier/gap in the surface layer(s) of an elongated nanostructure, the method comprising the steps of providing at least one elongated device nanostructure on a substrate in a vacuum chamber having at least one deposition source, providing at least one elongated shadow nanostructure in said vacuum chamber, and depositing at least a first facet layer on at least a part of the device nanostructure(s) and the shadow nanostructure(s) by means of said deposition source, wherein the deposition source, the device nanostructure and the shadow nanostructure during deposition are arranged such that the shadow nanostructure covers and forms a shadow mask on at least a part of the device nanostructure thereby forming a gap in the first facet layer deposited on the device nanostructure.
摘要翻译：本公开涉及用于形成高效量子器件的器件和方法，特别是在异位过程中尚未被污染的量子器件。具体地说，目前公开的方法可以用于制造作为可调超导量子位元件的约瑟夫森结。一个实施例涉及一种用于原位产生细长纳米结构的表面层中的阻挡层/间隙的方法，所述方法包括以下步骤：在真空室中的衬底上提供至少一个细长器件纳米结构，至少一个沉积源，在所述真空室中提供至少一个细长阴影纳米结构，以及借助于所述沉积源在所述器件纳米结构和所述阴影纳米结构的至少一部分上沉积至少第一小面层，，其中在沉积过程中沉积源，器件纳米结构和阴影纳米结构被布置成使得阴影纳米结构覆盖并在器件纳米结构的至少一部分上形成阴影掩模，从而在沉积在器件上的第一小面层中形成间隙纳米结构。

5. 发明申请

WO2016207415A1 NETWORK OF NANOSTRUCTURES AS GROWN ON A SUBSTRATE 审中-公开
标题翻译：在基底上形成的纳米结构网络
公开(公告)号：WO2016207415A1
公开(公告)日：2016-12-29
申请号：PCT/EP2016/064787
申请日：2016-06-27
申请人： UNIVERSITY OF COPENHAGEN
发明人： KROGSTRUP, Peter , MARCUS, Charles , JESPERSEN, Thomas Sand , NYGÅRD, Jesper
IPC分类号： C30B11/12 , C30B29/60
CPC分类号： C30B11/12 , C30B29/60 , C30B29/66 , H01L21/02603
摘要： The present disclosure relates to a method for producing a network of interconnected nanostructures comprising the steps of: providing a substantially plane substrate; growing a plurality of elongated nanostructures from the substrate; kinking the growth direction of at least a part of the nanostructures such that at least part of the kinked nanostructures are growing in a network plane parallel to the substrate, and creating one or more network(s) of interconnected kinked nanostructures in the network plane, wherein a dielectric support layer is provided below the network plane to support said network(s) of interconnected nanostructures.
摘要翻译：本公开涉及一种用于生产互连纳米结构网络的方法，包括以下步骤：提供基本上平面的基底; 从衬底生长多个细长的纳米结构; 使得至少部分纳米结构的生长方向扭结，使得至少部分扭结的纳米结构在平行于衬底的网络平面中生长，并且在网络平面中创建互连的扭结的纳米结构的一个或多个网络，其中介质支撑层设置在所述网络平面下方以支撑所述互连的纳米结构的网络。

6. 发明公开

EP3427311A1 A MANUFACTURING METHOD FOR A NANOSTRUCTURED DEVICE USING A SHADOW MASK 有权
公开(公告)号：EP3427311A1
公开(公告)日：2019-01-16
申请号：EP17708537.0
申请日：2017-03-07
申请人： The University of Copenhagen
发明人： KROGSTRUP, Peter , MARCUS, Charles
IPC分类号： H01L39/22 , B82Y40/00 , C23C14/14 , C30B29/60 , H01L39/24 , G06N99/00
摘要： The present disclosure relates to a device and method for forming efficient quantum devices, in particular quantum devices that have not been contaminated in ex-situ processes. In particular the presently disclosed method can be applied for manufacturing of a Josephson junction which is an element in a tunable superconducting qubit. One embodiment relates to a method for in-situ production of a barrier/gap in the surface layer(s) of an elongated nanostructure, the method comprising the steps of providing at least one elongated device nanostructure on a substrate in a vacuum chamber having at least one deposition source, providing at least one elongated shadow nanostructure in said vacuum chamber, and depositing at least a first facet layer on at least a part of the device nanostructure(s) and the shadow nanostructure(s) by means of said deposition source, wherein the deposition source, the device nanostructure and the shadow nanostructure during deposition are arranged such that the shadow nanostructure covers and forms a shadow mask on at least a part of the device nanostructure thereby forming a gap in the first facet layer deposited on the device nanostructure.

7. 发明公开

EP3164889A1 A SEMICONDUCTOR JOSEPHSON JUNCTION AND A TRANSMON QUBIT RELATED THERETO 有权
标题翻译：一个半导体JOSEPHSON JUNCTION和一个TRANSMON QUBIT相关的
公开(公告)号：EP3164889A1
公开(公告)日：2017-05-10
申请号：EP15707943.5
申请日：2015-03-04
申请人： University of Copenhagen
发明人： MARCUS, Charles , KROGSTRUP, Peter , JESPERSEN, Thomas Sand , NYGÅRD, Jesper , PETERSSON, Karl , LARSEN, Thorvald , KUEMMETH, Ferdinand
IPC分类号： H01L29/41 , H01L29/66 , H01L29/06 , H01L29/43 , H01L29/45 , H01L39/22 , H01L39/24 , H01L39/06 , B82Y10/00 , B82Y40/00 , H01L39/02 , H01L39/08
CPC分类号： H01L39/02 , B82Y10/00 , B82Y40/00 , C23C14/28 , C30B11/12 , C30B23/025 , C30B23/066 , C30B29/62 , H01L29/0673 , H01L29/413 , H01L29/437 , H01L29/66469 , H01L39/025 , H01L39/125 , H01L39/221 , H01L39/223 , H01L39/228 , H01L39/2432 , H01L39/2493 , Y10S977/762 , Y10S977/81 , Y10S977/891 , Y10S977/938 , Y10S977/943
摘要： The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.
摘要翻译：本公开涉及纳米级装置及其制造方法，所述纳米级装置包括细长晶体纳米结构，例如纳米线晶体，纳米晶须晶体或纳米棒晶体。一个实施方案涉及纳米尺度装置，其包含细长晶体半导体纳米结构，例如优选由砷化铟制成的纳米线（晶体）或纳米晶须（晶体）或纳米棒（晶体），其具有多个基本平面的侧面，晶体结构覆盖一个或多个所述侧面的至少一部分的超导材料（优选铝）的第一小面层，以及覆盖第一小面层的至少一部分的超导材料（优选钒）的第二小面层，所述第一小面层所述第二小面层的超导材料不同于所述第一小面层的超导材料，其中所述半导体纳米结构的晶体结构与所述两个晶体结构之间的界面上的所述第一小面层的晶体结构外延匹配。

8. 发明授权

EP3427311B1 A MANUFACTURING METHOD FOR A NANOSTRUCTURED DEVICE USING A SHADOW MASK 有权
公开(公告)号：EP3427311B1
公开(公告)日：2020-07-22
申请号：EP17708537.0
申请日：2017-03-07
申请人： The University of Copenhagen
发明人： KROGSTRUP, Peter , MARCUS, Charles
IPC分类号： H01L39/22 , B82Y40/00 , C23C14/04 , C30B29/60 , H01L39/24 , G06N10/00 , C23C14/28 , C30B11/12 , C30B23/02 , C30B23/04 , C30B29/02 , C30B29/40 , C30B29/62

9. 发明公开

EP3164897A1 NANOSCALE DEVICE COMPRISING AN ELONGATED CRYSTALLINE NANOSTRUCTURE 有权
标题翻译：纳米级装置包含一个延长的结晶纳米结构
公开(公告)号：EP3164897A1
公开(公告)日：2017-05-10
申请号：EP15735666.8
申请日：2015-07-02
申请人： University of Copenhagen
发明人： KROGSTRUP, Peter , JESPERSEN, Thomas Sand , MARCUS, Charles M. , NYGÅRD, Jesper
IPC分类号： H01L39/22 , H01L39/24 , H01L39/06 , H01L29/06 , H01L29/66 , B82Y10/00 , B82Y40/00 , H01L29/41 , H01L29/43 , H01L29/45
CPC分类号： H01L39/02 , B82Y10/00 , B82Y40/00 , C23C14/28 , C30B11/12 , C30B23/025 , C30B23/066 , C30B29/62 , H01L29/0673 , H01L29/413 , H01L29/437 , H01L29/66469 , H01L39/025 , H01L39/125 , H01L39/221 , H01L39/223 , H01L39/228 , H01L39/2432 , H01L39/2493 , Y10S977/762 , Y10S977/81 , Y10S977/891 , Y10S977/938 , Y10S977/943
摘要： The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.
摘要翻译：本公开涉及纳米级装置及其制造方法，所述纳米级装置包括细长晶体纳米结构，例如纳米线晶体，纳米晶须晶体或纳米棒晶体。一个实施方案涉及纳米尺度装置，其包含细长晶体半导体纳米结构，例如优选由砷化铟制成的纳米线（晶体）或纳米晶须（晶体）或纳米棒（晶体），其具有多个基本平面的侧面，晶体结构覆盖一个或多个所述侧面的至少一部分的超导材料（优选铝）的第一小面层，以及覆盖第一小面层的至少一部分的超导材料（优选钒）的第二小面层，所述第一小面层所述第二小面层的超导材料不同于所述第一小面层的超导材料，其中所述半导体纳米结构的晶体结构与所述两个晶体结构之间的界面上的所述第一小面层的晶体结构外延匹配。

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