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    • 1. 发明申请
    • METHOD FOR WELDING AT LEAST TWO LAYERS
    • 用于焊接至少两层的方法
    • WO2013164294A1
    • 2013-11-07
    • PCT/EP2013/058844
    • 2013-04-29
    • UNIVERSITE CATHOLIQUE DE LOUVAIN
    • JACQUES, PascalVAN DER REST, CamilleSIMAR, Aude
    • B23K20/12B23K20/227B23K20/26
    • B23K20/2275B23K20/125B23K20/1265B23K20/1275B23K20/26
    • The method of the invention relates to a method for welding a first (20) and a second (30) layers together. The second melting temperature of the second layer (30), T m,2 , is lower than the first melting temperature of the first layer (20), T m,1 . After having formed a layup (50) by placing the first layer (20) on top of the second layer (30), a rotating tool (70) is pressed and translated over at least a friction portion (15) of the upper surface (20u) of the first layer (20) such that the temperature reached by at least a portion of the upper surface (30u) of the second layer (30) is higher than the second melting temperature, T m,2 . Restraining means allow preventing molten second material from flowing out of the layup (50). Materials of first (20) and second (30) layers are chosen among the following materials: metals, semi-metals, or semiconductors.
    • 本发明的方法涉及将第一(20)和第二(30)层焊接在一起的方法。 第二层(30)的第二熔融温度Tm,2低于第一层(20)的第一熔融温度Tm,1。 在通过将第一层(20)放置在第二层(30)的顶部上形成叠层(50)之后,旋转工具(70)被压制并平移至少上表面的摩擦部分(15) 20u),使得由第二层(30)的上表面(30u)的至少一部分达到的温度高于第二熔融温度Tm,2。 限制装置允许防止熔融的第二材料流出叠层(50)。 第一层(20)和第二层(30)的材料选自以下材料:金属,半金属或半导体。