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    • 7. 发明申请
    • LIGHT EMITTING DIODE COMPRISING SEMICONDUCTOR NANOCRYSTAL COMPLEXES
    • 包含半导体纳米晶体复合物的发光二极管
    • WO2007009011A2
    • 2007-01-18
    • PCT/US2006/027125
    • 2006-07-13
    • EVIDENT TECHNOLOGIES, INC.CHEON, Kwang-Ohk
    • CHEON, Kwang-Ohk
    • H01L33/00H01L21/00
    • H01L33/502B82Y20/00H01L33/56H01L33/644
    • A light emitting diode (LED) formed by depositing an LED chip and coupling a stability layer to the LED chip. Semiconductor nanocrystals are placed in a first matrix material to form a nanocrystal complex layer. The nanocrystal complex layer is deposited on top of the stability layer. A thickness of the stability layer is chosen to maximizes a power of a light output by the nanocrystal complex layer. The matrix material and the stability layer can be of the same type of material. Additional layers of matrix material can be deposited on top of the nanocrystal complex layer. These additional layers can comprise matrix material only or can comprise matrix material and semiconductor nanocrystals to form another nanocrystal complex layer.
    • 通过沉积LED芯片并将稳定层耦合到LED芯片而形成的发光二极管(LED)。 将半导体纳米晶体置于第一基体材料中以形成纳米晶复合物层。 纳米晶体复合物层沉积在稳定层的顶部。 选择稳定层的厚度以最大化纳米晶体复合物层输出的光的功率。 基质材料和稳定层可以是相同类型的材料。 额外的基质材料层可以沉积在纳米晶复合物层的顶部。 这些附加层可以仅包含基体材料,或者可以包含基体材料和半导体纳米晶体以形成另一纳米晶体复合物层。