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1. 发明申请

WO2014015285A3 FIELD-SHAPING MULTI-WELL AVALANCHE DETECTOR FOR DIRECT CONVERSION AMORPHOUS SELENIUM 审中-公开
标题翻译：用于直接转换非线性SELENI的场成形多层差动探测器
公开(公告)号：WO2014015285A3
公开(公告)日：2014-03-13
申请号：PCT/US2013051351
申请日：2013-07-19
申请人： UNIV NEW YORK STATE RES FOUND
发明人： GOLDAN AMIRHOSSEIN , ZHAO WEI
IPC分类号： H01L31/107 , G01D5/30
CPC分类号： H01L31/0272 , H01L27/14603 , H01L31/0376 , H01L31/107 , H01L31/115
摘要： A field shaping multi-well avalanche detector and method for fabrication thereof are disclosed. The field shaping multi-well avalanche detector provides stable avalanche multiplication gain in direct conversion amorphous selenium radiation detectors. The detector provides stable avalanche multiplication gain by eliminating field hot-spots using high- density avalanche wells with insulated wells and field-shaping within each well.
摘要翻译：公开了一种场成形多井雪崩探测器及其制造方法。场成形多井雪崩检测器在直接转换非晶硒辐射探测器中提供稳定的雪崩倍增益。检测器通过使用具有绝缘阱的高密度雪崩井和每个井内的场成形来消除场热点，提供稳定的雪崩倍增益。

2. 发明专利

CA3080643C FLAT PANEL X-RAY IMAGER WITH SCINTILLATING GLASS SUBSTRATE 未知
公开(公告)号：CA3080643C
公开(公告)日：2021-06-15
申请号：CA3080643
申请日：2019-05-23
申请人： UNIV NEW YORK STATE RES FOUND
发明人： LUBINSKY ANTHONY , HOWANSKY ADRIAN , ZHAO WEI
IPC分类号： G01T1/20
摘要： Structures operable to detect radiation are described. An imaging system is also described having the structures. For example, a structure may include two screens and a photosensor array between the two screens. One of the screens is comprised of a scintillating glass substrate. The scintillating glass substrate may serve two purposes. The scintillating glass substrate converts incident x-rays into light photons. Additionally, the scintillating glass substrate is a substrate for the photosensor array. The photosensor array is configured to detect light photons that reach the photosensor array from both screens.

3. 发明专利

CA3153087A1 HIGH-GAIN AMORPHOUS SELENIUM PHOTOMULTIPLIER 未知
公开(公告)号：CA3153087A1
公开(公告)日：2021-03-18
申请号：CA3153087
申请日：2020-09-11
申请人： UNIV NEW YORK STATE RES FOUND , UNIV NEW YORK
发明人： GOLDAN AMIRHOSSEIN , ZHAO WEI , SAHU AYASKANTA
IPC分类号： H01L31/0272
摘要： A photomultiplier containing a solid-state photoconductive film composed of amorphous selenium (a-Se) is provided. In the a-Se containing photomultiplier, a hole-blocking layer is provided that maximizes gain and maintains low dark conductivity. Also, the hole-blocking layer achieves reliable and repeatable impact ionization without irreversible breakdown. The hole-blocking layer is a non-insulating metal oxide having a dielectric constant (k) of greater than 10.

4. 发明专利

CA3080643A1 FLAT PANEL X-RAY IMAGER WITH SCINTILLATING GLASS SUBSTRATE 未知
公开(公告)号：CA3080643A1
公开(公告)日：2019-11-28
申请号：CA3080643
申请日：2019-05-23
申请人： UNIV NEW YORK STATE RES FOUND
发明人： LUBINSKY ANTHONY , HOWANSKY ADRIAN , ZHAO WEI
IPC分类号： G01T1/20
摘要： Structures operable to detect radiation are described. An imaging system is also described having the structures. For example, a structure may include two screens and a photosensor array between the two screens. One of the screens is comprised of a scintillating glass substrate. The scintillating glass substrate may serve two purposes. The scintillating glass substrate converts incident x-rays into light photons. Additionally, the scintillating glass substrate is a substrate for the photosensor array. The photosensor array is configured to detect light photons that reach the photosensor array from both screens.

5. 发明专利

AU2017367615A1 Hybrid active matrix flat panel detector system and method 未知
公开(公告)号：AU2017367615A1
公开(公告)日：2019-04-04
申请号：AU2017367615
申请日：2017-11-30
申请人： UNIV NEW YORK STATE RES FOUND
发明人： ZHAO WEI , SCHEUERMANN JAMES , HOWANSKY ADRIAN , LUBINSKY RICK , GOLDAN AMIRHOSSEIN , STAVRO JANN
IPC分类号： H01L27/14 , G01T1/20 , H01L27/146
摘要： A hybrid radiation imaging sensor includes a low x-ray attenuating substrate, a photoconductor disposed over the substrate, and a scintillator disposed over the photoconductor. By combining direct x-ray conversion to electron-hole pairs in the photoconductor with indirect conversion of x-rays downstream of the photoconductor within the scintillator, improved x-ray imaging can be attained through an electronic readout located upstream of both the photoconductor and the scintillator without the need for excessive x-ray dosing.

6. 发明专利

CA2910922C NANO-ELECTRODE MULTI-WELL HIGH-GAIN AVALANCHE RUSHING PHOTOCONDUCTOR 未知
公开(公告)号：CA2910922C
公开(公告)日：2018-07-24
申请号：CA2910922
申请日：2014-05-29
申请人： UNIV NEW YORK STATE RES FOUND
发明人： GOLDAN AMIRHOSSEIN , ZHAO WEI , ROWLANDS JOHN A
IPC分类号： G01T1/20 , G01T1/29
摘要： Provided is a detector that includes a scintillator, a common electrode, a pixel electrode, and a plurality of insulating layers, with a plurality of nano-pillars formed in the plurality of insulating layers, a nano-scale well structure between adjacent nano-pillars, with a-Se separating the adjacent nano-pillars, and a method for operation thereof.

7. 发明专利

CA3010852A1 MULTI-WELL SELENIUM DEVICE AND METHOD FOR FABRICATION THEREOF 未知
公开(公告)号：CA3010852A1
公开(公告)日：2017-07-13
申请号：CA3010852
申请日：2017-01-09
申请人： UNIV NEW YORK STATE RES FOUND
发明人： GOLDAN AMIRHOSSEIN , ZHAO WEI
IPC分类号： H01L31/08 , H01L27/146 , H01L31/0224 , H01L31/0392 , H01L31/107
摘要： Provided is a field shaping multi-well detector and method of fabrication thereof. The detector is configured by depositing a pixel electrode on a substrate, depositing a first dielectric layer, depositing a first conductive grid electrode layer on the first dielectric layer, depositing a second dielectric layer on the first conductive grid electrode layer, depositing a second conductive grid electrode layer on the second dielectric layer, depositing a third dielectric layer on the second conductive grid electrode layer, depositing an etch mask on the third dielectric layer. Two pillars are formed by etching the third dielectric layer, the second conductive grid electrode layer, the second dielectric layer, the first conductive grid electrode layer, and the first dielectric layer. A well between the two pillars is formed by etching to the pixel electrode, without etching the pixel electrode, and the well is filled with a-Se.

8. 发明专利

AU2017367615B2 Hybrid active matrix flat panel detector system and method 未知
公开(公告)号：AU2017367615B2
公开(公告)日：2022-05-26
申请号：AU2017367615
申请日：2017-11-30
申请人： UNIV NEW YORK STATE RES FOUND
发明人： ZHAO WEI , SCHEUERMANN JAMES , HOWANSKY ADRIAN , LUBINSKY RICK , GOLDAN AMIRHOSSEIN , STAVRO JANN
IPC分类号： H01L27/14 , G01T1/20 , H01L27/146
摘要： A hybrid radiation imaging sensor includes a low x-ray attenuating substrate, a photoconductor disposed over the substrate, and a scintillator disposed over the photoconductor. By combining direct x-ray conversion to electron-hole pairs in the photoconductor with indirect conversion of x-rays downstream of the photoconductor within the scintillator, improved x-ray imaging can be attained through an electronic readout located upstream of both the photoconductor and the scintillator without the need for excessive x-ray dosing.

9. 发明专利

AU2017205654B9 Selenium photomultiplier and method for fabrication thereof 未知
公开(公告)号：AU2017205654B9
公开(公告)日：2021-12-09
申请号：AU2017205654
申请日：2017-01-09
申请人： UNIV NEW YORK STATE RES FOUND
发明人： GOLDAN AMIRHOSSEIN , ZHAO WEI
IPC分类号： H01L31/107 , H01L31/0376 , H01L31/054
摘要： Provided is a field shaping multi-well photomultiplier and method for fabrication thereof. The photomultiplier includes a field-shaping multi-well avalanche detector, including a lower insulator, an a-Se photoconductive layer and an upper insulator. The a-Se photoconductive layer is positioned between the lower insulator and the upper insulator. A light interaction region, an avalanche region, and a collection region are provided along a length of the photomultiplier, and the light interaction region and the collection region are positioned on opposite sides of the avalanche region.

10. 发明专利

ES2858089T3 Fotomultiplicador de selenio 未知
公开(公告)号：ES2858089T3
公开(公告)日：2021-09-29
申请号：ES17736512
申请日：2017-01-09
申请人： UNIV NEW YORK STATE RES FOUND
发明人： GOLDAN AMIRHOSSEIN , ZHAO WEI
IPC分类号： H01L31/107 , G01T1/24 , H01L31/0272
摘要： Un fotomultiplicador con un detector de radiación, que comprende: un aislante inferior (112); una capa fotoconductora de a-Se (130); y un aislante superior (114), en EL Que la capa fotoconductora de a-Se (130) se encuentra entre el aislante inferior (112) y el superior (114), caracterizado porque una región de interacción de luz (140), una región de avalancha (150) y una región de recolección (180) se encuentran a lo largo de una longitud del detector de radiación, en la que la región de interacción de luz (140) y la región de recolección (180) están situadas en lados opuestos de la región de la avalancha (150), en la que la región de interacción de luz (140) tiene una ventana óptica superior (141) y una ventana óptica inferior (142), para la entrada de primera luz (144) y segunda luz (146), desde arriba y abajo del detector de radiación, respectivamente, el fotomultiplicador que comprende además: a) una fuente de alta tensión (149) situada en un extremo distal de la región de interacción de luz (140); y b) un colector (182) situado en un extremo distal de la región de recolección (180), en el que la fuente de alta tensión (149) y el colector (182) están situados en extremos horizontales opuestos del detector de radiación, c) una pluralidad de rejillas (152, 154, 156, 158) que forman una pluralidad de rejillas de Frisch laterales colocadas a intervalos predeterminados a lo largo de una longitud horizontal de la región de avalancha (150).

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