会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明专利
    • Solid memory device
    • 固体存储器件
    • JP2006080241A
    • 2006-03-23
    • JP2004261601
    • 2004-09-08
    • Sanyo Electric Co LtdUniv Nagoya三洋電機株式会社国立大学法人名古屋大学
    • TSUNASHIMA SHIGERUKATO TSUYOSHINOGUCHI HITOSHIYAMAGUCHI ATSUSHI
    • H01L27/105G11C11/15H01L21/8246H01L43/08
    • PROBLEM TO BE SOLVED: To provide a solid memory device which has a simple structure, and is capable of achieving further densification, higher accessibility, and longer stability in recording while suppressing power consumption substantially.
      SOLUTION: The solid memory device comprises magnetization fixing layers 101, 109 which are composed of a permanent magnet, or an antiferromagnetic material for fixing the direction of magnetization of high-spin polarized layers 102, 104, 106, 108. The polarized layers consist of magnetic layers showing a high spin polarity. The memory also includes insulating layers 103, 107 which exert a tunnel magnetic resistance effect to contribute to memory read-out, and emit Joule's heat as a writing current passes through the insulating layers 103, 107 to heat a writing layer 105. The writing layer 105 is of a magnetization reversing layer whose direction of magnetization reverses in response to a spin carrier injection from the high-spin polarized layers 102, 104, 106, 108. The writing layer 105 shows a low Curie temperature (150 to 300°C), and is capable of magnetization reversal with fewer spin injection when subjected to heat.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种具有简单结构并且能够实现进一步致密化,更高可接近性和更长的记录稳定性的固态存储器件,同时基本上抑制功率消耗。 固体存储器件包括由永磁体或用于固定高自旋极化层102,104,106,108的磁化方向的反铁磁材料构成的磁化固定层101,109。 层由表现出高自旋极性的磁性层组成。 存储器还包括施加隧道磁阻效应以有助于存储器读出的绝缘层103,107,并且当写入电流通过绝缘层103,107以加热写入层105时,发出焦耳热。写入层 105是磁化反转层,其磁化方向响应于从高自旋极化层102,104,106,108的自旋载流子注入而反转。写入层105显示出低的居里温度(150至300℃) 并且当经受热时能够通过较少的自旋注入而磁化反转。 版权所有(C)2006,JPO&NCIPI