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    • 1. 发明专利
    • Organic hybrid planar-nanocrystalline bulk heterojunctions
    • AU2014203700A1
    • 2014-07-24
    • AU2014203700
    • 2014-07-07
    • UNIV MICHIGAN REGENTSUNIV PRINCETON
    • FORREST STEPHEN RYANG FAN
    • H01L51/42
    • Abstract A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials (950) disposed between the anode (120) and the cathode (170). The photoconductive materials (950) include a first continuous layer of donor material (152) and a second continuous layer of acceptor material (154). A first network of donor material or materials (953c) extends from the first continuous layer (152) toward the second continuous layer (154), providing continuous pathways for conduction of holes to the first continuous layer (152). A second network of acceptor material or materials (953b) extends from the second continuous layer (154) toward the first continuous layer (152), providing continuous pathways for conduction of electrons to the second continuous layer (154). The first network (953c) and the second network (953b) are interlaced with each other. At least one other photoconductive material (953a, 953d) is interspersed between the interlaced networks. This other photoconductive material or materials (953a, 953d) has an absorption spectra different from the donor and acceptor materials. Discontinuous 4 953d Acceptor 154 Blocking.156 Cathode 170 Discontinuous 3 953c Discontinuous 2 953b xxxxxxxxxxxxxxxxxx Discontinuous 1 953a Donor 152 Smoothing 122 Anode120 Substrate 110 FIG. 9H Blocking 156 170 Photoactive Region 950 Smoothing 122 Anode120 Substrate 110 FIG. 10 Discontinuous 1 1153a Donor 152 Smoothing 122 Anode 120 Substrate 110 FIG. 1 A
    • 5. 发明专利
    • Organic hybrid planar-nanocrystalline bulk heterojunctions
    • AU2007322040B2
    • 2014-04-10
    • AU2007322040
    • 2007-11-13
    • UNIV MICHIGAN REGENTSUNIV PRINCETON
    • YANG FANFORREST STEPHEN R
    • H01L51/42
    • A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials (950) disposed between the anode (120) and the cathode (170). The photoconductive materials (950) include a first continuous layer of donor material (152) and a second continuous layer of acceptor material (154). A first network of donor material or materials (953c) extends from the first continuous layer (152) toward the second continuous layer (154), providing continuous pathways for conduction of holes to the first continuous layer (152). A second network of acceptor material or materials (953b) extends from the second continuous layer (154) toward the first continuous layer (152), providing continuous pathways for conduction of electrons to the second continuous layer (154). The first network (953c) and the second network (953b) are interlaced with each other. At least one other photoconductive material (953a, 953d) is interspersed between the interlaced networks. This other photoconductive material or materials (953a, 953d) has an absorption spectra different from the donor and acceptor materials.
    • 6. 发明申请
    • ORGANIC HYBRID PLANAR-NANOCRYSTALLINE BULK HETEROJUNCTIONS
    • 有机杂化平面 - 纳米晶体异质结
    • WO2008063519A9
    • 2008-08-28
    • PCT/US2007023912
    • 2007-11-13
    • UNIV PRINCETONUNIV MICHIGANFORREST STEPHEN RYANG FAN
    • FORREST STEPHEN RYANG FAN
    • H01L51/42
    • H01L27/302B82Y10/00H01L51/0046H01L51/0078H01L51/0086H01L51/4246H01L51/4253Y02E10/549Y02P70/521
    • A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials (950) disposed between the anode (120) and the cathode (170). The photoconductive materials (950) include a first continuous layer of donor material (152) and a second continuous layer of acceptor material (154). A first network of donor material or materials (953c) extends from the first continuous layer (152) toward the second continuous layer (154), providing continuous pathways for conduction of holes to the first continuous layer (152). A second network of acceptor material or materials (953b) extends from the second continuous layer (154) toward the first continuous layer (152), providing continuous pathways for conduction of electrons to the second continuous layer (154). The first network (953c) and the second network (953b) are interlaced with each other. At least one other photoconductive material (953a, 953d) is interspersed between the interlaced networks. This other photoconductive material or materials (953a, 953d) has an absorption spectra different from the donor and acceptor materials.
    • 具有改进的混合平面体异质结的光敏光电子器件包括设置在阳极(120)和阴极(170)之间的多个光电导材料(950)。 光电导材料(950)包括施主材料(152)的第一连续层和受主材料(154)的第二连续层。 第一供体材料网络(953c)从第一连续层(152)向第二连续层(154)延伸,提供用于将空穴传导至第一连续层(152)的连续路径。 受主材料或材料的第二网络(953b)从第二连续层(154)朝向第一连续层(152)延伸,提供用于将电子传导至第二连续层(154)的连续路径。 第一网络(953c)和第二网络(953b)相互交错。 至少一个其他光电导材料(953a,953d)散布在交织网络之间。 这种其他光电导材料(953a,953d)具有不同于供体和受体材料的吸收光谱。
    • 7. 发明申请
    • ORGANIC HYBRID PLANAR-NANOCRYSTALLINE BULK HETEROJUNCTIONS
    • 有机混合平面 - 纳米晶体块体异常
    • WO2008063519A2
    • 2008-05-29
    • PCT/US2007023912
    • 2007-11-13
    • UNIV PRINCETONUNIV MICHIGANFORREST STEPHEN RYANG FAN
    • FORREST STEPHEN RYANG FAN
    • H01L51/42
    • H01L27/302B82Y10/00H01L51/0046H01L51/0078H01L51/0086H01L51/4246H01L51/4253Y02E10/549Y02P70/521
    • A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials disposed between the anode and the cathode. The photoconductive materials include a first continuous layer of donor material and a second continuous layer of acceptor material. A first network of donor material or materials extends from the first continuous layer toward the second continuous layer, providing continuous pathways for conduction of holes to the first continuous layer. A second network of acceptor material or materials extends from the second continuous layer toward the first continuous layer, providing continuous pathways for conduction of electrons to the second continuous layer. The first network and the second network are interlaced with each other. At least one other photoconductive material is interspersed between the interlaced networks. This other photoconductive material or materials has an absorption spectra different from the donor and acceptor materials.
    • 具有改进的混合平面体异质结的光敏光电子器件包括设置在阳极和阴极之间的多个光导材料。 光电导材料包括供体材料的第一连续层和受主材料的第二连续层。 供体材料或材料的第一网络从第一连续层延伸到第二连续层,提供用于将孔传导到第一连续层的连续路径。 受主材料或材料的第二网络从第二连续层向第一连续层延伸,提供用于将电子传导到第二连续层的连续路径。 第一网络和第二网络彼此交错。 至少另一种光电导材料分散在隔行网络之间。 这种其他光电导材料或材料具有不同于供体和受体材料的吸收光谱。
    • 9. 发明申请
    • CONTROLLED GROWTH OF LARGER HETEROJUNCTION INTERFACE AREA FOR ORGANIC PHOTOSENSITIVE DEVICES
    • 有机光敏器件大尺寸异质结界面的控制生长
    • WO2008097258A3
    • 2008-10-02
    • PCT/US2007015809
    • 2007-07-10
    • UNIV PRINCETONUNIV MICHIGANYANG FANFORREST STEPHEN R
    • YANG FANFORREST STEPHEN R
    • H01L51/42H01L51/00
    • H01L51/4246H01L51/0008H01L51/4253Y02E10/549Y02P70/521
    • An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional area; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconductor material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depositing a second electrode on the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first and third organic semiconductor materials are both of a donor-type or an acceptor-type relative to second and fourth organic semiconductor materials, which are of the other material type.
    • 一种光电子器件和制造光敏光电子器件的方法包括在第一电极上沉积第一有机半导体材料以形成具有突起的连续的第一层,第一层的与第一电极相对的一侧具有至少三倍的表面积 大于下面的横向横截面积; 直接在第一层上沉积第二有机半导体材料以形成不连续的第二层,第一层的部分保持暴露; 直接在第二层上沉积第三有机半导体材料以形成不连续的第三层,至少第二层的部分保持暴露; 在第三层上沉积第四有机半导体材料以形成连续的第四层,填充第一,第二和第三层中的任何暴露的间隙和凹陷; 以及在所述第四层上沉积第二电极,其中所述第一电极和所述第二电极中的至少一个是透明的,并且所述第一和第三有机半导体材料相对于第二和第四相对是施主型或受主型 有机半导体材料,这是另一种材料类型。