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1. 发明申请

WO2011103187A3 SEMICONDUCTOR THAT HAS A FUNCTIONALIZED SURFACE 审中-公开
标题翻译：具有功能化表面的半导体
公开(公告)号：WO2011103187A3
公开(公告)日：2011-12-22
申请号：PCT/US2011025079
申请日：2011-02-16
申请人： UNIV MICHIGAN , MALDONADO STEPHEN , MUKHERJEE JHINDAN
发明人： MALDONADO STEPHEN , MUKHERJEE JHINDAN
IPC分类号： H01L21/20
CPC分类号： H01L21/306 , C23C18/18 , C23C18/2046 , C23C22/05 , C23C22/14 , C23C22/17 , C30B29/406 , C30B33/00 , H01L21/02538 , H01L21/02664
摘要： This invention provides a semiconductor having a functionalized surface that is resistant to oxidation and that includes a plurality of atoms of a Group III element bonded to organic groups. The functionalized surface has less than or equal to about 1 atom of the Group III element bonded to an oxygen atom per every 1,000 atoms of the Group III element bonded to the organic groups, as determined using X-ray photoelectron spectroscopy. This invention also provides a method of functionalizing the surface and includes the step of halogenating at least one of the plurality of atoms of the Group III element to form halogenated Group III element atoms. The method also includes the step of reacting at least one of the halogenated Group III element atoms with a Grignard reagent to form a bond between the at least one Group III element atom and the organic groups.
摘要翻译：本发明提供了一种具有抗氧化的功能化表面的半导体，其包括与有机基团键合的多个III族元素原子。如使用X射线光电子能谱所测定的，官能化表面具有小于或等于约1/3的与结合到有机基团的III族元素的每1,000个原子键合到氧原子的III族元素的原子。本发明还提供了官能化表面的方法，并且包括卤化III族元素的多个原子中的至少一个原子以形成卤化的III族元素原子的步骤。该方法还包括使至少一种卤化III族元素原子与格利雅试剂反应以在至少一种III族元素原子和有机基团之间形成键的步骤。

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