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1. 发明申请

WO2006138626A3 (AI,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONIC APPLICATION AND ITS FABRICATION METHOD 审中-公开
标题翻译：（AI，Ga，In）N和ZnO用于光电子应用的直接波形结合结构及其制造方法
公开(公告)号：WO2006138626A3
公开(公告)日：2007-10-11
申请号：PCT/US2006023588
申请日：2006-06-16
申请人： UNIV CALIFORNIA , JAPAN SCIENCE & TECH AGENCY , MURAI AKIHIKO , CHEN CHRISTINA YE , THOMPSON DANIEL B , MCCARTHY LEE S , DENBAARS STEVEN P , NAKAMURA SHUJI , MISHRA UMESH K
发明人： MURAI AKIHIKO , CHEN CHRISTINA YE , THOMPSON DANIEL B , MCCARTHY LEE S , DENBAARS STEVEN P , NAKAMURA SHUJI , MISHRA UMESH K
IPC分类号： H01L21/00 , H01L33/00 , H01L33/20 , H01L33/22 , H01L33/32
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20 , H01L33/32 , H01S5/0215 , H01S5/0421 , H01S5/18347 , H01S5/18369 , H01S5/1838 , H01S5/32341
摘要： An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.
摘要翻译： An（Al，Ga，In）N和ZnO直接晶圆键合发光二极管（LED），其中光通过导电ZnO。为（Al，Ga，In）N和ZnO晶圆制备平坦且干净的表面。然后在（Al，Ga，In）N和ZnO晶片之间进行晶片接合工艺，其中（Al，Ga，In）N和ZnO晶片被接合在一起，然后在氮气氛下在单轴压力下在设定温度一段时间。在晶片接合工艺之后，ZnO被成形为用于从LED内部增加光提取。

2. 发明申请

WO2006014421A2 METHOD FOR WAFER BONDING (Al, In, Ga)N AND Zn(S, Se) FOR OPTOELECTRONIC APPLICATIONS 审中-公开
标题翻译：用于光电耦合的方法（Al，In，Ga）N和Zn（S，Se）
公开(公告)号：WO2006014421A2
公开(公告)日：2006-02-09
申请号：PCT/US2005023802
申请日：2005-07-06
申请人： UNIV CALIFORNIA , UNIV BREMEN , MURAI AKIHIKO , MCCARTHY LEE , MISHRA UMESH K , DENBAARS STEVEN P , KRUSE CARSTEN , FIGGE STEPHAN , HOMMEL DETLEF
发明人： MURAI AKIHIKO , MCCARTHY LEE , MISHRA UMESH K , DENBAARS STEVEN P , KRUSE CARSTEN , FIGGE STEPHAN , HOMMEL DETLEF
IPC分类号： H01L21/30 , H01L33/00
CPC分类号： H01L21/2007 , H01L21/0237 , H01L21/02395 , H01L21/0242 , H01L21/0254 , H01L21/02557 , H01L21/0256 , H01L21/02664 , H01L21/187 , H01L33/0079
摘要： A method for producing a wafer bonded structure between (Al, In, Ga)N and Zn(S,Se). A highly reflective and conductive distributed Bragg reflector (DBR) for relatively short optical wave lengths can be fabricated using Zn(S,Se) and MgS/(Zn,Cd)Se materials. Using wafer bonding techniques, these high-quality DBR structures can be combined with a GaN-based optical device structure.
摘要翻译：（Al，In，Ga）N和Zn（S，Se）之间的晶片接合结构的制造方法。可以使用Zn（S，Se）和MgS /（Zn，Cd）Se材料制造用于相对短的光波长的高反射和导电分布布拉格反射器（DBR）。使用晶片接合技术，这些高质量的DBR结构可与GaN基光学器件结构组合。

3. 发明申请

WO2007056354A8 HIGH LIGHT EXTRACTION EFFICIENCY LIGHT EMITTING DIODE (LED) 审中-公开
标题翻译：高光提取效率LED发光二极管（LED）
公开(公告)号：WO2007056354A8
公开(公告)日：2007-08-16
申请号：PCT/US2006043317
申请日：2006-11-06
申请人： UNIV CALIFORNIA , DENBAARS STEVEN P , NAKAMURA SHUJI , MASUI HISASHI , FELLOWS NATALIE N , MURAI AKIHIKO
发明人： DENBAARS STEVEN P , NAKAMURA SHUJI , MASUI HISASHI , FELLOWS NATALIE N , MURAI AKIHIKO
IPC分类号： H01L33/00 , H01L33/20 , H01L33/26 , H01L33/58 , H01L33/60
CPC分类号： H01L33/58 , H01L33/007 , H01L33/20 , H01L33/26 , H01L33/60
摘要： Ail (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped plastic optical element, in which the directional light from the ZnO cone, or from any high refractive index material in contact with the LED surface, entering the shaped plastic optical element is extracted to air.
摘要翻译： Ail（Al，Ga，In）N和ZnO直接晶圆键合发光二极管（LED）与成形塑料光学元件组合，其中来自ZnO圆锥的定向光或与LED接触的任何高折射率材料表面，进入成形塑料光学元件被提取到空气中。

4. 发明申请

WO2007056354A2 HIGH LIGHT EXTRACTION EFFICIENCY LIGHT EMITTING DIODE (LED) 审中-公开
标题翻译：高光提取效率发光二极管（LED）
公开(公告)号：WO2007056354A2
公开(公告)日：2007-05-18
申请号：PCT/US2006043317
申请日：2006-11-06
申请人： DENBAARS STEVEN P , NAKAMURA SHUJI , MASUI HISASHI , FELLOWS NATALIE N , MURAI AKIHIKO
发明人： DENBAARS STEVEN P , NAKAMURA SHUJI , MASUI HISASHI , FELLOWS NATALIE N , MURAI AKIHIKO
IPC分类号： H01L33/00 , H01L33/20 , H01L33/26 , H01L33/58 , H01L33/60
CPC分类号： H01L33/58 , H01L33/007 , H01L33/20 , H01L33/26 , H01L33/60
摘要： Ail (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped plastic optical element, in which the directional light from the ZnO cone, or from any high refractive index material in contact with the LED surface, entering the shaped plastic optical element is extracted to air.
摘要翻译： Ail（Al，Ga，In）N和ZnO直接晶片键合发光二极管（LED）结合成形塑料光学元件，其中来自ZnO锥体的定向光或来自与LED接触的任何高折射率材料表面，进入成形的塑料光学元件被提取到空气中。

5. 发明申请

WO2008060594A3 HIGH LIGHT EXTRACTION EFFICIENCY LIGHT EMITTING DIODE (LED) THROUGH MULTIPLE EXTRACTORS 审中-公开
标题翻译：高光提取效率发光二极管（LED）通过多个提取器
公开(公告)号：WO2008060594A3
公开(公告)日：2008-08-14
申请号：PCT/US2007023990
申请日：2007-11-15
申请人： UNIV CALIFORNIA , DAVID AURELIEN J F , WEISBUCH CLAUDE C A , MURAI AKIHIKO , DENBAARS STEVEN P
发明人： DAVID AURELIEN J F , WEISBUCH CLAUDE C A , MURAI AKIHIKO , DENBAARS STEVEN P
IPC分类号： H01S5/00 , H01L33/10 , H01L33/20
CPC分类号： H01L33/20 , H01L33/10 , H01L2933/0083
摘要： An (Al,In,Ga)N and ZnO direct wafer bonded light emitting diode (LED), combined with a second light extractor acting as an additional light extraction method. This second light extraction method aims at extracting the light which has not been extracted by the ZnO structure, and more specifically the light which is trapped in the (Al,In,Ga)N layer. This second method is suited for light extraction from thin films, using surface patterning or texturing, or a photonic crystal acting as a diffraction grating. The combination of both the ZnO structure and the second light extraction method enables most of the emitted light from the LED to be extracted. In a more general extension of the present invention, the ZnO structure can be replaced by another material in order to achieve additional light extraction. In another extension, the (Al,In,Ga)N layer can be replaced by structures comprising other materials compositions, in order to achieve additional light extraction.
摘要翻译：将（Al，In，Ga）N和ZnO直接晶圆键合发光二极管（LED）与作为附加光提取方法的第二光提取器结合。该第二光提取方法旨在提取未被ZnO结构提取的光，并且更具体地提取被捕获在（Al，In，Ga）N层中的光。第二种方法适用于从薄膜中提取光，使用表面图案化或纹理化，或光子晶体充当衍射光栅。 ZnO结构和第二种光提取方法的组合使得能够提取来自LED的大部分发射光。在本发明的更普遍的延伸中，为了实现额外的光提取，ZnO结构可以被另一种材料替代。在另一个扩展中，（Al，In，Ga）N层可以被包含其他材料组成的结构代替，以实现额外的光提取。

6. 发明公开

EP1949463A4 HIGH LIGHT EXTRACTION EFFICIENCY LIGHT EMITTING DIODE (LED) 审中-公开
标题翻译：发光二极管（LED），光提取效率高
公开(公告)号：EP1949463A4
公开(公告)日：2010-12-29
申请号：EP06837048
申请日：2006-11-06
申请人： UNIV CALIFORNIA
发明人： DENBAARS STEVEN P , NAKAMURA SHUJI , MASUI HISASHI , FELLOWS NATALIE N , MURAI AKIHIKO
IPC分类号： H01L33/00 , H01L33/20 , H01L33/26 , H01L33/58 , H01L33/60
CPC分类号： H01L33/58 , H01L33/007 , H01L33/20 , H01L33/26 , H01L33/60

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