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1. 发明专利

JP2001189367A SUBSTRATE-CARRYING ROBOT 失效
公开(公告)号：JP2001189367A
公开(公告)日：2001-07-10
申请号：JP2000000026
申请日：2000-01-04
申请人： ULVAC CORP
发明人： KUROKAWA KUNIAKI , HORI EISUKE , HIRATA MASAYORI
IPC分类号： B23Q3/08 , B65G49/06 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a substrate-carrying robot that is suited for the transfer of a glass substrate. SOLUTION: Projecting members 28a and 28b are provided on a surface near the tip of a fork part 22 where a substrate is placed, at the same time, arm parts 23a and 23b are arranged at both the sides of the fork part 22, and retention members 24a and 24b are arranged at the position of the arm parts 23a and 23b near the root of the fork part. The substrate that is kept stationary at the upper portion of the fork part 22 is lowered, the end part of the substrate is slid on the inclined surface of the upper portion of the projecting members 28a and 28b or the projecting inclined surface of the retention members 24a and 24b and at the same time, is dropped onto the fork part 22. Even if the position of the substrate is deviated, the end part of the substrate can be placed at an accurate position. By providing support members 251-258 made of carbon on the fork part 22 and placing the substrate on it, a high-temperature substrate can be carried.

2. 发明专利

JP2002060949A PLASMA FILM DEPOSITION SYSTEM AND CLEANING METHOD THEREFOR 失效
公开(公告)号：JP2002060949A
公开(公告)日：2002-02-28
申请号：JP2000250080
申请日：2000-08-21
申请人： ULVAC CORP
发明人： ASARI SHIN , TSUJI NAOTO , KURATA TAKAOMI , YAMAUCHI KAZUAKI , HASHIMOTO YUKINORI , ISHIKAWA MICHIO , HIRATA MASAYORI , MORI KATSUHIKO
IPC分类号： C23C16/34 , C23C16/40 , C23C16/44 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a plasma film deposition system by which the dissipitation of radicals in the process of being introduced into a film deposition chamber is prevented, and the radicals of cleaning gas generated at the outside of the film deposition chamber can be utilized for cleaning in the film deposition chamber with high efficiency and to provide a cleaning method therefor. SOLUTION: A cleaning gas introducing means 23 is directly communicated with the inside of a film deposition chamber 10, and, at the time of cleaning for the inside of the film deposition chamber 10, radicals generated by a radical generating means 21 are directly introduced into the film deposition chamber 10 without being passed through a shower plate 5.

3. 发明专利

JPH0910577A STRUCTURAL MATERIAL FOR VACUUM APPARATUS AND STRUCTURAL MEMBER FOR VACUUM APPARATUS 失效
公开(公告)号：JPH0910577A
公开(公告)日：1997-01-14
申请号：JP18212295
申请日：1995-06-26
申请人： ULVAC CORP
发明人： SAGUSA NOBUYUKI , HASEGAWA TSUTOMU , NAGASHIMA SHIGEYUKI , OZAKI NORIO , SUWA HIDENORI , KIKUCHI MASASHI , MORI KATSUHIKO , ARAI SUSUMU , SHIMIZU YASUO , HIRATA MASAYORI , OGATA HIDEYUKI
IPC分类号： B01J3/00 , C23C2/12 , C23C14/00 , C23C16/44 , C23C16/54 , C23C26/00 , C23C28/00 , H01L21/205
摘要： PURPOSE: To provide a structural material for a vacuum apparatus with high corrosion resistance to a halogen-containing type etching gas excited by plasma discharge. CONSTITUTION: A corrosion resistant shower plate 71 is made of a plate material 74 with 4mm thickness of a Ni-based corrosion resistant alloy of which the whole area including bolt hole 72 and gas flow straightening hole 73 parts is coated with aluminum (A 5052) with 1.3mm and the surface of the aluminum coating is further coated with an oxidized aluminum layer 76 with 20μm thickness by anodization oxidation.

4. 发明专利

JPH10209045A METHOD FOR COOLING SUBSTRATE IN VACUUM FILM FORMING METHOD AND APPARATUS FOR COOLING SUBSTRATE IN VACUUM FILM FORMING APPARATUS 失效
公开(公告)号：JPH10209045A
公开(公告)日：1998-08-07
申请号：JP962997
申请日：1997-01-22
申请人： ULVAC CORP
发明人： ISHIKAWA MICHIO , ITO KAZUYUKI , HASHIMOTO YUKINORI , YONEZAKI TAKESHI , TOGAWA ATSUSHI , OTA YOSHIFUMI , MORI KATSUHIKO , SHIMIZU YASUO , HIRATA MASAYORI , KIKUCHI MASASHI , OGATA HIDEYUKI
IPC分类号： C23C14/58 , H01L21/02 , H01L21/08 , H01L21/205 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a method for cooling substrate in vacuum film forming method to lower the temp. of a hot glass substrate uniformly after forming films, thereby cooling without deforming or cracking the substrate. SOLUTION: The substrate cooling method after the vacuum forming of an amorphous Si film, Si nitride film, Si oxide film and Al, Cr or similar metal film or metal oxide or nitride films comprises the steps of feeding a hot glass substrate having formed films to a curing/take-up chamber having a thermostatic plate held at 50-300 deg.C to cool the substrate to specified temp. in vacuum, feeding the air into this chamber to set it to the atmospheric pressure, and taking the substrate out from the chamber.

5. 发明专利

JPH09129563A SHOWER PLATE 失效
公开(公告)号：JPH09129563A
公开(公告)日：1997-05-16
申请号：JP31015495
申请日：1995-11-02
申请人： ULVAC CORP
发明人： SAGUSA NOBUYUKI , OGATA HIDEYUKI , HASEGAWA TSUTOMU , ARAI SUSUMU , SHIMIZU YASUO , HIRATA MASAYORI , MORI KATSUHIKO , KIKUCHI MASASHI , OZAKI NORIO , SUWA HIDENORI
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a shower plate wherein a deposited thin film in a CVD process is hardly separated off even it becomes thick. SOLUTION: Grooves each of width 1mm are formed in both a horizontal and a lateral direction at a pitch of 2mm in the surface of an aluminum plate (A5052) opposed to a substrate to form ridges M and troughs N each possessed of a rounding of radius R 0.5mm on the surface of the aluminum plate, whereby the aluminum plate possessed of a rugged surface where the ridge M is 2mm high above the trough N is obtained. Gas spouting fine holes 13 each of diameter 0.4mm are bored at a pitch of 20mm in the ridges M provided to the surface of the aluminum plate respectively, and thus the aluminum plate is made to serve as a shower plate 17.

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