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1. 发明授权

US08227832B2 SiGe heterojunction bipolar transistor multi-finger structure 有权
标题翻译： SiGe异质结双极晶体管多指结构
公开(公告)号：US08227832B2
公开(公告)日：2012-07-24
申请号：US12971063
申请日：2010-12-17
申请人： Tzuyin Chiu , Zhengliang Zhou , Xiongbin Chen
发明人： Tzuyin Chiu , Zhengliang Zhou , Xiongbin Chen
IPC分类号： H01L29/66
CPC分类号： H01L29/7378 , H01L29/0692 , H01L29/0821
摘要： The present invention provides a multi-finger structure of a SiGe heterojunction bipolar transistor (HBT). It is consisted of plural SiGe HBT single cells. The multi-finger structure is in a form of C/BEBC/BEBC/.../C, wherein, C, B, E respectively stands for collector, base and emitter; CBEBC stands for a SiGe HBT single cell. The collector region is consisted of an n type ion implanted layer inside the active region. The bottom of the implanted layer is connected to two n type pseudo buried layers. The two pseudo buried layers are formed through implantation to the bottom of the shallow trenches that surround the collector active region. Two collectors are picked up by deep trench contact through the field oxide above the two pseudo buried layers. The present invention can reduce junction capacitance, decrease collector electrode output resistance, and improve device frequency characteristics.
摘要翻译：本发明提供了一种SiGe异质结双极晶体管（HBT）的多指结构。它由多个SiGe HBT单电池组成。多指结构为C / BEBC / BEBC / ... / C，其中C，B，E分别代表集电极，基极和发射极; CBEBC代表SiGe HBT单电池。集电极区域由有源区域内的n型离子注入层构成。注入层的底部连接到两个n型伪埋层。两个伪埋层通过注入到围绕收集器有源区的浅沟槽的底部而形成。通过深沟槽接触通过两个伪埋层之上的场氧化物拾取两个集电极。本发明可以减少结电容，降低集电极输出电阻，提高器件频率特性。

2. 发明申请

US20110147793A1 SiGe HETEROJUNCTION BIPOLAR TRANSISTOR MULTI-FINGER STRUCTURE 有权
标题翻译： SiGe异质双极晶体管多指状结构
公开(公告)号：US20110147793A1
公开(公告)日：2011-06-23
申请号：US12971063
申请日：2010-12-17
申请人： Tzuyin CHIU , Zhengliang Zhou , Xiongbin Chen
发明人： Tzuyin CHIU , Zhengliang Zhou , Xiongbin Chen
IPC分类号： H01L29/737
CPC分类号： H01L29/7378 , H01L29/0692 , H01L29/0821
摘要： The present invention provides a multi-finger structure of a SiGe heterojunction bipolar transistor (HBT). It is consisted of plural SiGe HBT single cells. The multi-finger structure is in a form of C/BEBC/BEBC/.../C, wherein, C, B, E respectively stands for collector, base and emitter; CBEBC stands for a SiGe HBT single cell. The collector region is consisted of an n type ion implanted layer inside the active region. The bottom of the implanted layer is connected to two n type pseudo buried layers. The two pseudo buried layers are formed through implantation to the bottom of the shallow trenches that surround the collector active region. Two collectors are picked up by deep trench contact through the field oxide above the two pseudo buried layers. The present invention can reduce junction capacitance, decrease collector electrode output resistance, and improve device frequency characteristics.
摘要翻译：本发明提供了一种SiGe异质结双极晶体管（HBT）的多指结构。它由多个SiGe HBT单电池组成。多指结构为C / BEBC / BEBC / ... / C，其中C，B，E分别代表集电极，基极和发射极; CBEBC代表SiGe HBT单电池。集电极区域由有源区域内的n型离子注入层构成。注入层的底部连接到两个n型伪埋层。两个伪埋层通过注入到围绕收集器有源区的浅沟槽的底部而形成。通过深沟槽接触通过两个伪埋层之上的场氧化物拾取两个集电极。本发明可以减少结电容，降低集电极输出电阻，提高器件频率特性。

3. 发明授权

US08378457B2 Silicon-germanium heterojunction bipolar transistor 有权
标题翻译：硅 - 锗异质结双极晶体管
公开(公告)号：US08378457B2
公开(公告)日：2013-02-19
申请号：US13239250
申请日：2011-09-21
申请人： Fan Chen , Xiongbin Chen , Wensheng Qian , Zhengliang Zhou
发明人： Fan Chen , Xiongbin Chen , Wensheng Qian , Zhengliang Zhou
IPC分类号： H01L27/102
CPC分类号： H01L29/7378 , H01L21/26513 , H01L29/0821 , H01L29/41708
摘要： A SiGe HBT formed on a silicon substrate is disclosed. An active area is isolated by field oxide regions; a collector region is formed in the active area and extends into the bottom of the field oxide regions; pseudo buried layers are formed at the bottom of the field oxide regions, wherein each pseudo buried layer is separated by a lateral distance from the active area and connected to a lateral extension part of the collector region; first deep hole contacts are formed on top of the pseudo buried layers in the field oxide regions to pick up collector electrodes; a plurality of second deep hole contacts with a floating structure, are formed in the field oxide region on top of a lateral extension part of the collector region, wherein N-type implantation regions are formed at the bottom of the second deep hole contacts.
摘要翻译：公开了一种形成在硅衬底上的SiGe HBT。有源区域由场氧化物区域隔离; 在有源区域中形成集电极区域并延伸到场氧化物区域的底部; 伪掩埋层形成在场氧化物区域的底部，其中每个伪掩埋层与有源区域的横向距离分离并连接到集电极区域的横向延伸部分; 第一深孔触点形成在场氧化物区域中的伪掩埋层的顶部上以拾取集电极; 在集电区域的横向延伸部分的顶部上的场氧化物区域中形成多个具有浮动结构的第二深孔触点，其中在第二深孔触点的底部形成有N型注入区域。

4. 发明申请

US20120074465A1 SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR 有权
标题翻译：硅 - 锗绝缘双极晶体管
公开(公告)号：US20120074465A1
公开(公告)日：2012-03-29
申请号：US13239250
申请日：2011-09-21
申请人： Fan Chen , Xiongbin Chen , Wensheng Qian , Zhengliang Zhou
发明人： Fan Chen , Xiongbin Chen , Wensheng Qian , Zhengliang Zhou
IPC分类号： H01L29/737
CPC分类号： H01L29/7378 , H01L21/26513 , H01L29/0821 , H01L29/41708
摘要： A SiGe HBT formed on a silicon substrate is disclosed. An active area is isolated by field oxide regions; a collector region is formed in the active area and extends into the bottom of the field oxide regions; pseudo buried layers are formed at the bottom of the field oxide regions, wherein each pseudo buried layer is separated by a lateral distance from the active area and connected to a lateral extension part of the collector region; first deep hole contacts are formed on top of the pseudo buried layers in the field oxide regions to pick up collector electrodes; a plurality of second deep hole contacts with a floating structure, are formed in the field oxide region on top of a lateral extension part of the collector region, wherein N-type implantation regions are formed at the bottom of the second deep hole contacts.
摘要翻译：公开了一种形成在硅衬底上的SiGe HBT。有源区域由场氧化物区域隔离; 在有源区域中形成集电极区域并延伸到场氧化物区域的底部; 伪掩埋层形成在场氧化物区域的底部，其中每个伪掩埋层与有源区域的横向距离分离并连接到集电极区域的横向延伸部分; 第一深孔触点形成在场氧化物区域中的伪掩埋层的顶部上以拾取集电极; 在集电区域的横向延伸部分的顶部的场氧化物区域中形成多个具有浮动结构的第二深孔触点，其中在第二深孔触点的底部形成有N型注入区域。

5. 发明申请

US20120064688A1 METHOD FOR MANUFACTURING SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR 审中-公开
标题翻译：硅锗绝缘双极晶体管的制造方法
公开(公告)号：US20120064688A1
公开(公告)日：2012-03-15
申请号：US13229570
申请日：2011-09-09
申请人： Fan Chen , Xionbing Chen , Zhengliang Zhou
发明人： Fan Chen , Xionbing Chen , Zhengliang Zhou
IPC分类号： H01L21/331
CPC分类号： H01L21/26586 , H01L21/26513 , H01L29/0821 , H01L29/66242 , H01L29/7378
摘要： A manufacturing method of a SiGe HBT is disclosed. Alter an emitter region is formed, an ion implantation is performed with a tilt angle to a base region by using an extrinsic base ion implantation process; boron ions are implanted during the extrinsic base ion implantation with an implantation dose from 1e15 to 1e16 cm−2, an implantation energy from 5 to 30 KeV, and a tilt angle from 5 to 30 degrees. The tilt angle enables the implantation of P-type impurities into the part of the intrinsic base region at the bottom of the emitter window dielectric layer as well as the extrinsic base region, so that the base region excluding the part of the intrinsic base region in contact with the emitter region is entirely doped with P-type impurities, thus reducing the base resistance and improving the frequency characteristic of a transistor without needing to reduce its size.
摘要翻译：公开了SiGe HBT的制造方法。改变发射极区域，通过使用外部基极离子注入工艺，以与基极区域倾斜的角度进行离子注入; 在离子注入期间，以离子注入量为1e15〜1e16cm-2，注入能量为5〜30KeV，倾斜角为5〜30度，注入硼离子。倾斜角使得能够将P型杂质注入发射极窗电介质层的底部的本征基区的一部分以及外部碱性区，使得除了本征基区的部分以外的基区与发射极区域的接触完全掺杂有P型杂质，从而降低了基极电阻并提高了晶体管的频率特性，而不需要减小其尺寸。

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