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1. 发明申请

US20110057288A1 MEMS DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译： MEMS器件及其制造方法
公开(公告)号：US20110057288A1
公开(公告)日：2011-03-10
申请号：US12943269
申请日：2010-11-10
申请人： Tzung-Han TAN , Bang-Chiang LAN , Ming-I WANG , Chien-Hsin HUANG , Meng-Jia LIN
发明人： Tzung-Han TAN , Bang-Chiang LAN , Ming-I WANG , Chien-Hsin HUANG , Meng-Jia LIN
IPC分类号： H01L29/06 , H01L21/71
CPC分类号： B81C1/00246 , B81B3/0072 , B81B2203/04 , B81B2207/015 , B81C2201/0167
摘要： A microelectromechanical system (MEMS) device and a method for fabricating the same are described. The MEMS device includes a first electrode and a second electrode. The first electrode is disposed on a substrate, and includes at least two metal layers, a first protection ring and a dielectric layer. The first protection ring connects two adjacent metal layers, so as to define an enclosed space between two adjacent metal layers. The dielectric layer is disposed in the enclosed space and connects two adjacent metal layers. The second electrode is disposed on the first electrode, wherein a cavity is formed between the first electrode and the second electrode.
摘要翻译：描述了微机电系统（MEMS）装置及其制造方法。 MEMS器件包括第一电极和第二电极。第一电极设置在基板上，并且包括至少两个金属层，第一保护环和介电层。第一保护环连接两个相邻的金属层，以便限定两个相邻金属层之间的封闭空间。电介质层设置在封闭空间中并连接两个相邻的金属层。第二电极设置在第一电极上，其中在第一电极和第二电极之间形成空腔。

2. 发明申请

US20130023081A1 METHOD FOR FABRICATING INTEGRATED CIRCUIT 有权
标题翻译：制造集成电路的方法
公开(公告)号：US20130023081A1
公开(公告)日：2013-01-24
申请号：US13186607
申请日：2011-07-20
申请人： Meng-Jia LIN , Bang-Chiang Lan , Ming-I Wang , Chien-Hsin Huang
发明人： Meng-Jia LIN , Bang-Chiang Lan , Ming-I Wang , Chien-Hsin Huang
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , B81C1/00246 , B81C2203/0714 , H01L27/0617
摘要： A method for fabricating integrated circuit is provided. First, a first interconnect structure including a plurality of first dielectric layers and a plurality of first conductive patterns stacked therewith alternately is formed on a MEMS region of a conductive substrate. Next, an interlayer is formed on the first interconnect structure and covering the first conductive patterns. Next, a poly silicon mask layer corresponding to the first conductive patterns is formed on the interlayer and exposing a portion of the media layer. Next, the portion of the interlayer exposed by the poly silicon mask layer and a portion of the first dielectric layer corresponding thereto are removed to form a plurality of openings. Then, a portion of the conductive substrate in the MEMS region is removed.
摘要翻译：提供一种用于制造集成电路的方法。首先，在导电基板的MEMS区域上形成包括多个第一电介质层和交替堆叠的多个第一导电图案的第一互连结构。接下来，在第一互连结构上形成中间层并覆盖第一导电图案。接下来，在中间层上形成对应于第一导电图案的多晶硅掩模层，并暴露介质层的一部分。接下来，去除由多晶硅掩模层暴露的层的部分和与其对应的第一介电层的一部分，以形成多个开口。然后，去除MEMS区域中的导电衬底的一部分。

3. 发明申请

US20130056858A1 INTEGRATED CIRCUIT AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：集成电路及其制造方法
公开(公告)号：US20130056858A1
公开(公告)日：2013-03-07
申请号：US13223375
申请日：2011-09-01
申请人： Tian-You DING , Meng-Jia LIN , Chin-Sheng YANG
发明人： Tian-You DING , Meng-Jia LIN , Chin-Sheng YANG
IPC分类号： H01L21/3065 , H01L29/06
CPC分类号： B81C1/00246 , B81C2203/0735 , H01L21/3065 , H01L21/31116
摘要： A method for fabricating integrated circuit is provided. First, a substrate having a micro electromechanical system (MEMS) region is provided. A first interconnect structure and a hard mask layer have been disposed on the MEMS region in sequence. Next, an anisotropic etching process is performed by using the hard mask layer as a photo mask to etch a portion of the first interconnect structure exposed by the hard mask layer. Accordingly, a MEMS structure is formed. A portion of the substrate in MEMS region is exposed by the MEMS structure. Then, an isotropic etching process is performed for removing the portion of the substrate in MEMS region to form a cavity with a center region and a ring-like indentation region. The center region is surrounded by the ring-like indentation region and the MEMS structure suspends above the cavity. An integrated circuit is also provided.
摘要翻译：提供一种用于制造集成电路的方法。首先，提供具有微机电系统（MEMS）区域的基板。第一互连结构和硬掩模层已经依次布置在MEMS区域上。接下来，通过使用硬掩模层作为光掩模来进行各向异性蚀刻处理，以蚀刻由硬掩模层暴露的第一互连结构的一部分。因此，形成MEMS结构。 MEMS区域中的一部分衬底被MEMS结构曝光。然后，进行各向同性蚀刻处理，以除去MEMS区域中的基板的一部分，以形成具有中心区域和环状凹陷区域的空腔。中心区域被环状凹陷区域包围，并且MEMS结构悬在空腔上方。还提供集成电路。

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