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1. 发明申请

US20100213493A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20100213493A1
公开(公告)日：2010-08-26
申请号：US12753551
申请日：2010-04-02
申请人： Tzu-Chieh HSU , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao Hsing Chen
发明人： Tzu-Chieh HSU , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao Hsing Chen
IPC分类号： H01L33/42 , H01L33/46 , H01L33/60
CPC分类号： H01L33/20 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/42
摘要： A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first partial of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second partial of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer.
摘要翻译：一种发光器件，包括：具有第一导电类型半导体层的发光层叠层，形成在第一导电型半导体层上的发光层和形成在发光层上的第二导电型半导体层，其中，第二导电类型半导体层的上表面是纹理表面; 形成在所述第二导电型半导体层的上表面的第一部分上的第一平坦化层; 形成在所述第一平坦化层上的第一透明导电氧化物层和所述第二导电类型半导体层的第二部分，所述第二导电类型半导体层包括与所述第一平坦化层接触的第一部分和具有与所述第二平坦化层接触的第一多个空腔的第二部分导电型半导体层; 以及形成在第一透明导电氧化物层的第一部分上的第一电极。

2. 发明申请

US20110193119A1 OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF 有权
标题翻译：光电器件及其制造方法
公开(公告)号：US20110193119A1
公开(公告)日：2011-08-11
申请号：US13021307
申请日：2011-02-04
申请人： Shih-I CHEN , Chia-Liang HSU , Tzu-Chieh HSU , Chun-Yi WU , Chien-Fu HUANG
发明人： Shih-I CHEN , Chia-Liang HSU , Tzu-Chieh HSU , Chun-Yi WU , Chien-Fu HUANG
IPC分类号： H01L33/58 , H01L33/60
CPC分类号： H01L33/46 , H01L33/22 , H01L33/42 , H01L33/44
摘要： One aspect of the present disclosure provides an optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.One aspect of the present disclosure provides a method for manufacturing an optoelectronic device in accordance with the present disclosure. The method comprises the steps of providing a substrate; forming a semiconductor system on the substrate; forming a window layer on the semiconductor system, wherein the window layer comprises a semiconductor material different from the semiconductor system; selectively removing the window layer thereby forming a width difference between the window layer and the semiconductor system, and the width difference is greater than 1 micron.
摘要翻译：本公开的一个方面提供了一种包括衬底的光电器件; 在所述基板上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度; 具有第二薄层电阻，第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料，并且所述第二薄层电阻大于所述第一薄层电阻。本公开的一个方面提供了根据本公开的用于制造光电子器件的方法。该方法包括提供基板的步骤; 在所述基板上形成半导体系统; 在所述半导体系统上形成窗口层，其中所述窗口层包括不同于所述半导体系统的半导体材料; 选择性地去除窗口层，从而形成窗口层和半导体系统之间的宽度差，并且宽度差异大于1微米。

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