专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130251304A1 FLEXIBLE FIBER TO WAFER INTERFACE 有权
标题翻译：柔性纤维到波形界面
公开(公告)号：US20130251304A1
公开(公告)日：2013-09-26
申请号：US13428277
申请日：2012-03-23
申请人： Tymon Barwicz , Hidetoshi Numata , Yoichi Taira
发明人： Tymon Barwicz , Hidetoshi Numata , Yoichi Taira
IPC分类号： G02B6/12 , G02B6/42
CPC分类号： G02B6/305 , G02B6/3885 , G02B2006/12173 , G02B2006/12176 , G02B2006/1219
摘要： An interface device includes a flexible substrate portion, a flexible cladding portion arranged on the substrate portion, a flexible single-mode waveguide portion arranged on the cladding portion including a substantially optically transparent material, a first engagement feature operative to engage a portion of a wafer, and a connector portion engaging a first distal end of the flexible substrate portion, the connector portion operative to engage a portion of an optical fiber ferrule.
摘要翻译：接口装置包括柔性基板部分，布置在基板部分上的柔性包层部分，布置在包括基本上光学透明材料的包层部分上的柔性单模波导部分，可操作以接合晶片的一部分的第一接合特征以及与柔性基板部分的第一远端接合的连接器部分，该连接器部分可操作以接合光纤套圈的一部分。

2. 发明申请

US20110026879A1 FABRICATION-TOLERANT WAVEGUIDES AND RESONATORS 失效
标题翻译：制造耐受波长和谐振器
公开(公告)号：US20110026879A1
公开(公告)日：2011-02-03
申请号：US12905461
申请日：2010-10-15
申请人： Milos Popovic , Tymon Barwicz
发明人： Milos Popovic , Tymon Barwicz
IPC分类号： G02B6/26
CPC分类号： G02B6/1223 , G02B6/107 , G02B6/12007 , G02F1/0147 , G02F1/3133 , G02F2001/212 , G02F2201/063 , G02F2201/125 , G02F2203/15 , G02F2203/585 , H04J14/021 , H04Q2213/1301
摘要： An optical waveguide having a core region with a substantially rectangular cross-section with a selected aspect ratio of width to height. Embodiments include devices incorporating the optical waveguide and methods for using the optical waveguide.
摘要翻译：一种光波导，其具有具有基本上矩形横截面的芯区域，具有选定的宽度与高度的纵横比。实施例包括结合光波导的器件和使用光波导的方法。

3. 发明申请

US20100295020A1 Method For Forming A Robust Top-Down Silicon Nanowire Structure Using A Conformal Nitride And Such Structure 有权
标题翻译：使用保形氮化物和这种结构形成坚固的自上而下的硅纳米线结构的方法
公开(公告)号：US20100295020A1
公开(公告)日：2010-11-25
申请号：US12469304
申请日：2009-05-20
申请人： Tymon Barwicz , Lidija Sekaric , Jeffrey W. Sleight
发明人： Tymon Barwicz , Lidija Sekaric , Jeffrey W. Sleight
IPC分类号： H01L29/66 , H01L21/18
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/42392 , H01L29/78696
摘要： A nanowire product and process for fabricating it has a wafer with a buried oxide (BOX) upper layer in which a well is formed and the ends of a nanowire are on the BOX layer forming a beam that spans the well. A mask coating is formed on the upper surface of the BOX layer leaving an uncoated window over a center part of the beam and also forming a mask coating around the beam intermediate ends between each end of the beam center part and a side wall of the well. Applying oxygen through the window thins the beam center part while leaving the wire intermediate ends over the well thicker and having a generally arched shape. A thermal oxide coating can be placed on the wire and also the mask on the BOX layer before oxidation.
摘要翻译：纳米线产品及其制造方法具有具有掩埋氧化物（BOX）上层的晶片，其中形成阱，并且纳米线的端部在BOX层上形成跨越阱的束。掩模涂层形成在BOX层的上表面上，在光束的中心部分上留下未涂覆的窗口，并且还在光束中心部分的每个端部和阱的侧壁之间的光束中间端部周围形成掩模涂层。通过窗户施加氧气，使梁中心部分离开，同时将钢丝中间端部覆盖在较厚的孔上并具有大致拱形的形状。在氧化之前，可以将热氧化物涂层放置在导线上以及BOX层上的掩模上。

4. 发明授权

US07482277B2 Multilevel fabrication processing by functional regrouping of material deposition, lithography, and etching 失效
标题翻译：通过材料沉积，光刻和蚀刻的功能重组进行多层制造加工
公开(公告)号：US07482277B2
公开(公告)日：2009-01-27
申请号：US11285598
申请日：2005-11-22
申请人： Tymon Barwicz , Minghao Qi
发明人： Tymon Barwicz , Minghao Qi
IPC分类号： H01L21/302
CPC分类号： H01L21/31144 , H01L21/76811 , H01L21/76813
摘要： A method of multilevel microfabrication processing is provided. The method includes providing a planar substrate that comprises one or more material layers. A first hardmask layer placed on top of the substrate is patterned into the lithographic pattern desired for the top lithographic layer. Subsequent hardmask layers are patterned until the number of hardmask layers equals the number of lithographic layers desired. The method includes etching into the substrate and stripping the top hardmask layer. Furthermore, the method includes alternating etching into the substrate and stripping the subsequent hardmask layers until the bottom hardmask layer is stripped.
摘要翻译：提供了一种多级微细加工处理方法。该方法包括提供包括一个或多个材料层的平面基板。放置在基板顶部的第一硬掩模层被图案化成顶层光刻层所期望的光刻图案。随后的硬掩模层被图案化直到硬掩模层的数量等于所需的光刻层的数量。该方法包括蚀刻到衬底中并剥离顶部硬掩模层。此外，该方法包括交替蚀刻到衬底中并剥离随后的硬掩模层，直到底部硬掩模层被剥离为止。

5. 发明授权

US08604574B2 Transparent photodetector 有权
标题翻译：透明光电探测器
公开(公告)号：US08604574B2
公开(公告)日：2013-12-10
申请号：US13099827
申请日：2011-05-03
申请人： Tymon Barwicz
发明人： Tymon Barwicz
IPC分类号： H01L27/14 , H01L31/0232
CPC分类号： G01J1/42
摘要： The transparent photodetector includes a substrate; a waveguide on the substrate; a displaceable structure that can be displaced with respect to the substrate, the displaceable structure in proximity to the waveguide; and a silicon nanowire array suspended with respect to the substrate and mechanically linked to the displaceable structure, the silicon nanowire array comprising a plurality of silicon nanowires having piezoresistance. In operation, a light source propagating through the waveguide results in an optical force on the displaceable structure which further results in a strain on the nanowires to cause a change in electrical resistance of the nanowires. The substrate may be a semiconductor on insulator substrate.
摘要翻译：透明光电检测器包括基板; 衬底上的波导; 可移位的结构，其可相对于衬底移位，靠近波导的位移结构; 以及相对于衬底悬挂并机械地连接到可位移结构的硅纳米线阵列，所述硅纳米线阵列包括具有压阻的多个硅纳米线。在操作中，通过波导传播的光源导致可移动结构上的光学力，这进一步导致纳米线上的应变导致纳米线的电阻变化。衬底可以是绝缘体上半导体衬底上的半导体。

6. 发明授权

US08545108B1 Flexible fiber to wafer interface 有权
标题翻译：柔性光纤到晶圆接口
公开(公告)号：US08545108B1
公开(公告)日：2013-10-01
申请号：US13453027
申请日：2012-04-23
申请人： Tymon Barwicz , Hidetoshi Numata , Yoichi Taira
发明人： Tymon Barwicz , Hidetoshi Numata , Yoichi Taira
IPC分类号： G02B6/38
CPC分类号： G02B6/305 , G02B6/3885 , G02B2006/12173 , G02B2006/12176 , G02B2006/1219
摘要： A fiber to wafer interface system includes an interface device comprising a flexible substrate portion, a flexible cladding portion arranged on the substrate portion, a flexible single-mode waveguide portion arranged on the cladding portion including a substantially optically transparent material, a connector portion engaging a first distal end of the flexible substrate portion, the connector portion operative to engage a portion of an optical fiber ferrule, a wafer portion comprising a single mode waveguide portion arranged on a portion of the wafer, an adhesive disposed between a portion of the single mode waveguide portion of the body portion and the single mode waveguide portion of the wafer portion, the adhesive securing the body portion to the wafer portion.
摘要翻译：光纤到晶片接口系统包括：接口装置，包括柔性基板部分，布置在基板部分上的柔性包层部分，布置在包括基本上光学透明材料的包层部分上的柔性单模波导部分，柔性基板部分的第一远端，连接器部分可操作以接合光纤套圈的一部分，晶片部分包括布置在晶片的一部分上的单模波导部分，粘合剂设置在单模主体部分的波导部分和晶片部分的单模波导部分，将本体部分固定到晶片部分上的粘合剂。

7. 发明授权

US08362477B2 High density memory device 有权
标题翻译：高密度存储器件
公开(公告)号：US08362477B2
公开(公告)日：2013-01-29
申请号：US12729856
申请日：2010-03-23
申请人： Tymon Barwicz , Keith A. Jenkins , Supratik Guha
发明人： Tymon Barwicz , Keith A. Jenkins , Supratik Guha
IPC分类号： H01L29/12
CPC分类号： G11C11/404 , G11C13/0007 , H01L28/40 , H01L49/003
摘要： A memory device and a method of forming the same are provided. The memory device includes a substrate; a set of electrodes disposed on the substrate; a dielectric layer formed between the set of electrodes; and a transition metal oxide layer formed between the set of electrodes, the transition metal oxide layer configured to undergo a metal-insulator transition (MIT) to perform a read or write operation.
摘要翻译：提供了一种存储器件及其形成方法。存储器件包括衬底; 设置在基板上的一组电极; 形成在该组电极之间的电介质层; 以及形成在所述电极组之间的过渡金属氧化物层，所述过渡金属氧化物层被配置为经历金属 - 绝缘体转变（MIT）以执行读取或写入操作。

8. 发明授权

US08080456B2 Robust top-down silicon nanowire structure using a conformal nitride 有权
标题翻译：使用保形氮化物的坚固的自顶向下的硅纳米线结构
公开(公告)号：US08080456B2
公开(公告)日：2011-12-20
申请号：US12469304
申请日：2009-05-20
申请人： Tymon Barwicz , Lidija Sekaric , Jeffrey W. Sleight
发明人： Tymon Barwicz , Lidija Sekaric , Jeffrey W. Sleight
IPC分类号： H01L21/336
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/42392 , H01L29/78696
摘要： In one exemplary embodiment, a method for fabricating a nanowire product comprising: providing a wafer having a buried oxide (BOX) upper layer in which a well is formed, the wafer further having a nanowire having ends resting on the BOX layer such that the nanowire forms a beam spanning said well; and forming a mask coating on an upper surface of the BOX layer leaving an uncoated window over a center part of said beam over said well and also forming a mask coating around beam intermediate ends between each end of a beam center part and a side wall of said well. In another exemplary embodiment, a nanowire product comprising: a wafer having a buried oxide (BOX) upper layer in which a well having side walls is formed; a nanowire having ends resting on the BOX layer so as to form a beam spanning said well and said side walls; and a hard mask coating on an upper surface of said BOX layer and around intermediate ends of said beam between each side wall of said well and ends of a center part of said beam leaving an uncoated window over a beam center part through which oxidation of said beam center part can take place.
摘要翻译：在一个示例性实施例中，一种用于制造纳米线产品的方法，包括：提供具有其中形成阱的掩埋氧化物（BOX）上层的晶片，所述晶片还具有具有搁置在BOX层上的端部的纳米线，使得纳米线形成横跨所述井的梁; 并且在BOX层的上表面上形成掩模涂层，在所述孔的中心部分上留下未涂覆的窗口，并且还在梁的中心部分的两端和侧壁之间的梁中间端部说得好在另一个示例性实施例中，纳米线产品包括：具有掩埋氧化物（BOX）上层的晶片，其中形成具有侧壁的阱; 具有搁置在BOX层上的端部以形成横跨所述井和所述侧壁的梁的纳米线; 以及在所述BOX层的上表面上并且在所述孔的每个侧壁和所述梁的中心部分的端部之间的所述梁的中间端周围的硬掩模涂层，在光束中心部分上留下未涂覆的窗口，通过所述光束中心部分氧化所述梁中心部分可以发生。

9. 发明授权

US07994028B2 Structures having lattice-mismatched single-crystalline semiconductor layers on the same lithographic level and methods of manufacturing the same 有权
标题翻译：具有相同光刻层上晶格失配的单晶半导体层的结构及其制造方法
公开(公告)号：US07994028B2
公开(公告)日：2011-08-09
申请号：US12538759
申请日：2009-08-10
申请人： Tymon Barwicz , Devendra K. Sadana
发明人： Tymon Barwicz , Devendra K. Sadana
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/84 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/02551 , H01L27/1203 , H01L27/1207
摘要： A semiconductor substrate containing a single crystalline group IV semiconductor is provided. A single crystalline lattice mismatched group IV semiconductor alloy layer is epitaxially grown on a portion of the semiconductor layer, while another portion of the semiconductor layer is masked. The composition of the lattice mismatched group IV semiconductor alloy layer is tuned to substantially match the lattice constant of a single crystalline compound semiconductor layer, which is subsequently epitaxially grown on the single crystalline lattice mismatched group IV semiconductor alloy layer. Thus, a structure having both the group IV semiconductor layer and the single crystalline compound semiconductor layer is provided on the same semiconductor substrate. Group IV semiconductor devices, such as silicon devices, and compound semiconductor devices, such as GaAs devices having a laser emitting capability, may be formed on the on the same lithographic level of the semiconductor substrate.
摘要翻译：提供了含有单晶IV族半导体的半导体衬底。在半导体层的一部分上外延生长单晶格不匹配的IV族半导体合金层，而半导体层的另一部分被掩蔽。调整晶格失配的IV族半导体合金层的组成基本上与单晶化合物半导体层的晶格常数匹配，随后在单晶格子失配的IV族半导体合金层上外延生长。因此，具有IV族半导体层和单晶化合物半导体层的结构设置在同一半导体衬底上。诸如硅器件的IV族半导体器件和诸如具有激光发射能力的GaAs器件的化合物半导体器件可以形成在半导体衬底的相同的光刻层上。

10. 发明授权

US07450800B2 Precise and permanent modification of the resonant frequency of a dielectric microcavity and correction of frequency shifts in dielectric coupled-resonator filters 有权
公开(公告)号：US07450800B2
公开(公告)日：2008-11-11
申请号：US11372643
申请日：2006-03-10
申请人： Tymon Barwicz , Michael R. Watts , Milos Popovic , Christina Manolatou
发明人： Tymon Barwicz , Michael R. Watts , Milos Popovic , Christina Manolatou
IPC分类号： G02B6/26 , G02B6/42 , H01S3/08 , H01S3/081 , H01S3/083 , H01L21/00
CPC分类号： G02B6/29343 , G01C19/66 , G02B6/12007 , G02B6/29361
摘要： A coupled resonator includes a plurality of resonators such that at least one of the resonators is modified so as to adjust the resonant frequency associated with the coupled resonator.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式