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1. 发明授权

US06812069B2 Method for improving semiconductor process wafer CMP uniformity while avoiding fracture 失效
$Method for improving semiconductor process wafer CMP uniformity while avoiding fracture$
标题翻译：改善半导体工艺晶片CMP均匀性同时避免断裂的方法
公开(公告)号：US06812069B2
公开(公告)日：2004-11-02
申请号：US10322691
申请日：2002-12-17
申请人： Tung-Ching Tseng , Syun-Ming Jang , Chih-Hsiang Yao
发明人： Tung-Ching Tseng , Syun-Ming Jang , Chih-Hsiang Yao
IPC分类号： H01L2182
CPC分类号： H01L21/7684 , H01L21/3212 , H01L23/522 , H01L2924/0002 , H01L2924/00
摘要： A method for improving CMP polishing uniformity and reducing or preventing cracking in a semiconductor wafer process surface by reducing stress concentrations adjacent to dummy features including providing a semiconductor wafer process surface including active features and dummy features formed adjacently to the active features to improve a CMP polishing uniformity said dummy features each shaped to define an enclosed area in said semiconductor wafer process surface plane comprising at least 5 corner portions; and, performing a CMP process on said semiconductor wafer process surface.
摘要翻译：一种通过减少与虚拟特征相邻的应力集中来提高CMP抛光均匀性并减少或防止半导体晶片工艺表面中的裂纹的方法，包括提供半导体晶片工艺表面，其包括与活性特征相邻形成的活性特征和虚拟特征，以改善CMP抛光均匀性，所述虚拟特征各自被成形为在包括至少5个角部的所述半导体晶片工艺表面中限定封闭区域; 以及在所述半导体晶片处理表面上执行CMP处理。

2. 发明申请

US20060211250A1 Scratch reduction for chemical mechanical polishing 有权
标题翻译：化学机械抛光刮刮
公开(公告)号：US20060211250A1
公开(公告)日：2006-09-21
申请号：US11082517
申请日：2005-03-17
申请人： Chuang-Ping Hou , Syun-Ming Jang , Ying-Ho Chen , Chu-Yun Fu , Tung-Ching Tseng
发明人： Chuang-Ping Hou , Syun-Ming Jang , Ying-Ho Chen , Chu-Yun Fu , Tung-Ching Tseng
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31053
摘要： A method for forming a semiconductor device utilizing a chemical-mechanical polishing (CMP) process is provided. In one example, the method includes sequentially performing a first CMP process for removing a first portion of an oxide surface of a semiconductor device using a high selectivity slurry (HSS) and a first polish pad, interrupting the first CMP process, cleaning the semiconductor device and the first polish pad, and performing a second CMP process for removing a second portion of the oxide surface.
摘要翻译：提供了一种利用化学机械抛光（CMP）工艺形成半导体器件的方法。在一个示例中，该方法包括依次执行第一CMP处理，以使用高选择性浆料（HSS）和第一抛光垫去除半导体器件的氧化物表面的第一部分，中断第一CMP工艺，清洁半导体器件和第一抛光垫，并且执行用于去除氧化物表面的第二部分的第二CMP工艺。

3. 发明授权

US06930040B2 Method of forming a contact on a silicon-on-insulator wafer 有权
公开(公告)号：US06930040B2
公开(公告)日：2005-08-16
申请号：US10691019
申请日：2003-10-22
申请人： Chuan-Ping Hou , Syun-Ming Jang , Ying-Ho Chen , Tung-Ching Tseng
发明人： Chuan-Ping Hou , Syun-Ming Jang , Ying-Ho Chen , Tung-Ching Tseng
IPC分类号： H01L21/00 , H01L21/306 , H01L21/44 , H01L21/4763 , H01L21/74 , H01L21/762
CPC分类号： H01L21/743 , H01L21/76283 , H01L21/76286
摘要： In a method of the present invention, an intermediate structure having a top surface is provided. An isolation trench is formed is the intermediate structure. Isolation material is deposited over the intermediate structure. The isolation material fills the isolation trench. Excess isolation material extends above the top surface of the intermediate structure. Part of the excess isolation material is removed until there is a predetermined thickness of isolation material remaining on the top surface of the intermediate structure. A contact opening is formed in the isolation material at the isolation trench. The contact opening extends through at least part of the intermediate structure. Contact material is deposited over the isolation material. The contact material fills the contact opening. Excess contact material, if any, that extends above the isolation material is removed. The excess isolation material is removed at least until the top surface of the intermediate structure is reached.

4. 发明授权

US07297632B2 Scratch reduction for chemical mechanical polishing 有权
标题翻译：化学机械抛光刮刮
公开(公告)号：US07297632B2
公开(公告)日：2007-11-20
申请号：US11082517
申请日：2005-03-17
申请人： Chuang-Ping Hou , Syun-Ming Jang , Ying-Ho Chen , Chu-Yun Fu , Tung-Ching Tseng
发明人： Chuang-Ping Hou , Syun-Ming Jang , Ying-Ho Chen , Chu-Yun Fu , Tung-Ching Tseng
IPC分类号： H01L21/311
CPC分类号： H01L21/31053
摘要： A method for forming a semiconductor device utilizing a chemical-mechanical polishing (CMP) process is provided. In one example, the method includes sequentially performing a first CMP process for removing a first portion of an oxide surface of a semiconductor device using a high selectivity slurry (HSS) and a first polish pad, interrupting the first CMP process, cleaning the semiconductor device and the first polish pad, and performing a second CMP process for removing a second portion of the oxide surface.
摘要翻译：提供了一种利用化学机械抛光（CMP）工艺形成半导体器件的方法。在一个示例中，该方法包括依次执行第一CMP处理，以使用高选择性浆料（HSS）和第一抛光垫去除半导体器件的氧化物表面的第一部分，中断第一CMP工艺，清洁半导体器件和第一抛光垫，并且执行用于去除氧化物表面的第二部分的第二CMP工艺。

5. 发明授权

US07109117B2 Method for chemical mechanical polishing of a shallow trench isolation structure 有权
标题翻译：浅沟槽隔离结构的化学机械抛光方法
公开(公告)号：US07109117B2
公开(公告)日：2006-09-19
申请号：US10757202
申请日：2004-01-14
申请人： Tung-Ching Tseng , Syun-Ming Jang , Li-Jia Yang , Chuan-Ping Hou
发明人： Tung-Ching Tseng , Syun-Ming Jang , Li-Jia Yang , Chuan-Ping Hou
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31053 , H01L21/76224
摘要： A method for chemical mechanical polishing (CMP) of a shallow trench isolation (STI) structure employs a sequence of slurry polishes. In the first step the substrate is polished with either silica-based slurry or diluted ceria-based slurry. The first polishing is at a higher removal rate than the second polishing step. The polishing proceeds with some planarization but does not expose the polish stop layer. After partial planarization, the high selectivity slurry was used to complete the process. Improved throughput, lower defects and good within wafer uniformity are achieved.
摘要翻译：浅沟槽隔离（STI）结构的化学机械抛光（CMP）的方法采用一系列浆料抛光。在第一步中，用二氧化硅基淤浆或稀土氧化铈基浆料抛光底物。第一抛光处于比第二抛光步骤更高的去除速率。抛光进行一些平坦化，但不会暴露抛光停止层。在部分平面化之后，使用高选择性浆料来完成该方法。实现了增加的吞吐量，更低的缺陷和良好的晶片均匀性。

6. 发明申请

US20050153555A1 Method for chemical mechanical polishing of a shallow trench isolation structure 有权
标题翻译：浅沟槽隔离结构的化学机械抛光方法
公开(公告)号：US20050153555A1
公开(公告)日：2005-07-14
申请号：US10757202
申请日：2004-01-14
申请人： Tung-Ching Tseng , Syun-Ming Jang , Li-Jia Yang , Chuan-Ping Hou
发明人： Tung-Ching Tseng , Syun-Ming Jang , Li-Jia Yang , Chuan-Ping Hou
IPC分类号： H01L21/302 , H01L21/3105 , H01L21/461 , H01L21/762
CPC分类号： H01L21/31053 , H01L21/76224
摘要： A method for chemical mechanical polishing (CMP) of a shallow trench isolation (STI) structure employs a sequence of slurry polishes. In the first step the substrate is polished with either silica-based slurry or diluted ceria-based slurry. The first polishing is at a higher removal rate than the second polishing step. The polishing proceeds with some planarization but does not expose the polish stop layer. After partial planarization, the high selectivity slurry was used to complete the process. Improved throughput, lower defects and good within wafer uniformity are achieved.
摘要翻译：浅沟槽隔离（STI）结构的化学机械抛光（CMP）的方法采用一系列浆料抛光。在第一步中，用二氧化硅基淤浆或稀土氧化铈基浆料抛光底物。第一抛光处于比第二抛光步骤更高的去除速率。抛光进行一些平坦化，但不会暴露抛光停止层。在部分平面化之后，使用高选择性浆料来完成该方法。实现了增加的吞吐量，更低的缺陷和良好的晶片均匀性。

7. 发明申请

US20050090096A1 Method of forming a contact on a silicon-on-insulator wafer 有权
标题翻译：在绝缘体上硅晶片上形成接触的方法
公开(公告)号：US20050090096A1
公开(公告)日：2005-04-28
申请号：US10691019
申请日：2003-10-22
申请人： Chuan-Ping Hou , Syun-Ming Jang , Ying-Ho Chen , Tung-Ching Tseng
发明人： Chuan-Ping Hou , Syun-Ming Jang , Ying-Ho Chen , Tung-Ching Tseng
IPC分类号： H01L21/00 , H01L21/306 , H01L21/44 , H01L21/4763 , H01L21/74 , H01L21/762
CPC分类号： H01L21/743 , H01L21/76283 , H01L21/76286
摘要： In a method of the present invention, an intermediate structure having a top surface is provided. An isolation trench is formed is the intermediate structure. Isolation material is deposited over the intermediate structure. The isolation material fills the isolation trench. Excess isolation material extends above the top surface of the intermediate structure. Part of the excess isolation material is removed until there is a predetermined thickness of isolation material remaining on the top surface of the intermediate structure. A contact opening is formed in the isolation material at the isolation trench. The contact opening extends through at least part of the intermediate structure. Contact material is deposited over the isolation material. The contact material fills the contact opening. Excess contact material, if any, that extends above the isolation material is removed. The excess isolation material is removed at least until the top surface of the intermediate structure is reached.
摘要翻译：在本发明的方法中，提供了具有顶表面的中间结构。形成隔离沟是中间结构。隔离材料沉积在中间结构上。隔离材料填充隔离沟槽。过多的隔离材料在中间结构的顶表面上方延伸。去除部分过量隔离材料，直到在中间结构的顶表面上剩余预定厚度的隔离材料。在隔离沟槽处的隔离材料中形成接触开口。接触开口延伸穿过中间结构的至少一部分。接触材料沉积在隔离材料上。接触材料填充接触开口。除去在隔离材料上方延伸的过量接触材料（如果有的话）。至少直到达到中间结构的顶表面去除多余隔离材料。

8. 发明授权

US06686284B2 Chemical mechanical polisher equipped with chilled retaining ring and method of using 失效
标题翻译：化学机械抛光机配有冷冻保持环和使用方法
公开(公告)号：US06686284B2
公开(公告)日：2004-02-03
申请号：US10072244
申请日：2002-02-06
申请人： Chi-Wei Chung , Tung-Ching Tseng , Tsu Shih , Syun-Ming Jang
发明人： Chi-Wei Chung , Tung-Ching Tseng , Tsu Shih , Syun-Ming Jang
IPC分类号： H01L2100
CPC分类号： H01L21/3212 , B24B37/32 , B24B55/02 , H01L21/31053
摘要： A chemical mechanical polishing apparatus that is equipped with a chilled retaining ring and a method for using the apparatus are described. The retaining ring is mounted therein a heat transfer means such as a metal tube and flowing therethrough a heat exchanging fluid for carrying away heat from the wafer mounted in the retaining ring, resulting in a temperature reduction in the slurry solution that contacts the wafer. The present invention apparatus and method therefore reduces the delamination problem for low k dielectric materials during polishing and the wafer scratching problem.
摘要翻译：描述了配备有冷冻保持环的化学机械抛光装置和使用该装置的方法。保持环安装有诸如金属管的传热装置，并在其中流过用于从安装在保持环中的晶片携带热量的热交换流体，导致与晶片接触的浆液中的温度降低。因此，本发明的装置和方法减少了抛光期间低k电介质材料和晶片划伤问题的分层问题。

9. 发明授权

US06579150B2 Dual detection method for end point in chemical mechanical polishing 有权
标题翻译：化学机械抛光终点双重检测方法
公开(公告)号：US06579150B2
公开(公告)日：2003-06-17
申请号：US09899408
申请日：2001-07-05
申请人： Tung-Ching Tseng
发明人： Tung-Ching Tseng
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B49/003 , B24B49/04 , B24B49/12
摘要： A dual detection method for end point in a chemical mechanical polishing process is described. The dual detection method utilizes both an optical detection device and an acoustical detection device. The acoustical detection device may also be used independently in certain applications without the optical detection device. The acoustical detection device determines an end point and stops the CMP process when a volume of the acoustical emission changes by at least 30% from its initial volume, or preferably changes by at least 50% from its initial volume.
摘要翻译：描述了化学机械抛光工艺中端点的双重检测方法。双重检测方法利用光学检测装置和声学检测装置。声学检测装置也可以在没有光学检测装置的情况下在某些应用中独立使用。当声发射体积从其初始体积变化至少30％或优选地从其初始体积改变至少50％时，声学检测装置确定终点并停止CMP过程。

10. 发明授权

US07016790B2 In-line hot-wire sensor for slurry monitoring 失效
标题翻译：用于泥浆监测的在线热线传感器
公开(公告)号：US07016790B2
公开(公告)日：2006-03-21
申请号：US10279575
申请日：2002-10-23
申请人： Tung-Ching Tseng , Li-Jia Yang
发明人： Tung-Ching Tseng , Li-Jia Yang
IPC分类号： G01N31/00
CPC分类号： G01F1/74 , G01F1/696 , G01N27/185
摘要： An in-line hot-wire sensor for monitoring the mixing and the flow rate of slurry is disclosed. The hot-wire sensor may include a number of resistors organized into a Wheatstone bridge, as well as a frequency-domain transform mechanism. The resistors include a hot-wire resistor that is placed in-line with the slurry after substances have been mixed to become the slurry. The Wheatstone bridge thus yields a signal that is transformed to the frequency domain by the frequency-domain transform mechanism, such as by performing a Fast Fourier Transform (FFT) of the signal. The frequency-domain transform is used to monitor the mixing of the substances into the slurry, and the flow rate of the slurry. The signal may be amplified prior to transformation to the frequency domain.
摘要翻译：公开了一种用于监测浆料的混合和流速的在线热线传感器。热线传感器可以包括组织成惠斯登电桥的多个电阻器，以及频域变换机构。电阻器包括在物质已经混合成浆料之后与浆料成一直线放置的热丝电阻器。惠斯通电桥因此产生通过频域变换机制变换到频域的信号，例如通过执行信号的快速傅里叶变换（FFT）。频域变换用于监测物质与浆料的混合以及浆料的流速。该信号可以在变换到频域之前被放大。

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