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1. 发明申请

US20120119326A1 CAPACITOR AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：电容器和半导体器件
公开(公告)号：US20120119326A1
公开(公告)日：2012-05-17
申请号：US13207728
申请日：2011-08-11
申请人： Tsuyoshi Sugisaki , Masatoshi Fukuda
发明人： Tsuyoshi Sugisaki , Masatoshi Fukuda
IPC分类号： H01L29/92 , H01G4/005
CPC分类号： H01G4/005 , H01G4/01 , H01G11/30 , H01L23/5223 , H01L23/5225 , H01L28/86 , H01L2924/0002 , Y02E60/13 , H01L2924/00
摘要： A capacitor includes first electrode patterns and second electrode patterns disposed alternately on a plane, each of the first electrode patterns having a linear shape and extending in a first direction from a first end to a third end with a first length, each of the second electrodes having a linear shape and extending in said first direction from a second end to a fourth end with a second length shorter than the first length, a first wiring pattern supplying a first voltage to the first electrode patterns by first via-plugs, and a second wiring pattern supplying a second voltage to the second electrode patterns by second via-plugs, wherein the first end of the first electrode pattern extends beyond the second end of the second electrode pattern and the third end of the first electrode pattern extends beyond the fourth end of said the electrode.
摘要翻译：电容器包括交替地设置在平面上的第一电极图案和第二电极图案，每个第一电极图案具有直线形状并且在第一方向上从第一端延伸到具有第一长度的第三端，每个第二电极具有线性形状并且在所述第一方向上从第二端延伸到具有比所述第一长度短的第二长度的第四端;第一布线图案，通过第一通孔插头向所述第一电极图案提供第一电压，第二布线图案布线图案通过第二通孔将第二电压提供给第二电极图案，其中第一电极图案的第一端延伸超过第二电极图案的第二端，并且第一电极图案的第三端延伸超过第四端的电极。

2. 发明授权

US08258600B2 Capacitor element and semiconductor device 有权
标题翻译：电容元件和半导体器件
公开(公告)号：US08258600B2
公开(公告)日：2012-09-04
申请号：US12720132
申请日：2010-03-09
申请人： Tsuyoshi Sugisaki , Hajime Kurata
发明人： Tsuyoshi Sugisaki , Hajime Kurata
IPC分类号： H01L29/92
CPC分类号： H01L23/5223 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a capacitor element including a first comb-shaped interconnection formed over a substrate and including a first comb tooth, a second comb-shaped interconnection formed over the substrate and including a second comb tooth opposed to the first comb tooth, and a first electrode and a second electrode opposed to each other with opposed surfaces of the first electrode and the second electrode intersecting a longitudinal direction of the first comb tooth and the second comb tooth, a first dielectric layer formed between the first electrode and the second electrode, the first electrode being connected to the first comb tooth, and the second electrode being connected to the second comb tooth.
摘要翻译：一种半导体器件包括电容器元件，其包括形成在衬底上并包括第一梳齿的第一梳状互连，形成在衬底上的第二梳形互连并且包括与第一梳齿相对的第二梳齿，以及第一电极和第二电极彼此相对，第一电极和第二电极的相对表面与第一梳齿和第二梳齿的纵向相交;第一电介质层，形成在第一电极和第二电极之间，所述第一电极连接到所述第一梳齿，并且所述第二电极连接到所述第二梳齿。

3. 发明申请

US20100164067A1 CAPACITOR ELEMENT AND SEMICONDUCTOR DEVICE 有权
标题翻译：电容元件和半导体器件
公开(公告)号：US20100164067A1
公开(公告)日：2010-07-01
申请号：US12720132
申请日：2010-03-09
申请人： Tsuyoshi Sugisaki , Hajime Kurata
发明人： Tsuyoshi Sugisaki , Hajime Kurata
IPC分类号： H01L29/92 , H01G4/005
CPC分类号： H01L23/5223 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a capacitor element including a first comb-shaped interconnection formed over a substrate and including a first comb tooth, a second comb-shaped interconnection formed over the substrate and including a second comb tooth opposed to the first comb tooth, and a first electrode and a second electrode opposed to each other with opposed surfaces of the first electrode and the second electrode intersecting a longitudinal direction of the first comb tooth and the second comb tooth, a first dielectric layer formed between the first electrode and the second electrode, the first electrode being connected to the first comb tooth, and the second electrode being connected to the second comb tooth.
摘要翻译：一种半导体器件包括电容器元件，其包括形成在衬底上并包括第一梳齿的第一梳状互连，形成在衬底上的第二梳形互连并且包括与第一梳齿相对的第二梳齿，以及第一电极和第二电极彼此相对，第一电极和第二电极的相对表面与第一梳齿和第二梳齿的纵向相交;第一电介质层，形成在第一电极和第二电极之间，所述第一电极连接到所述第一梳齿，并且所述第二电极连接到所述第二梳齿。

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