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1. 发明申请

US20120242438A1 MAGNETIC OSCILLATION ELEMENT AND SPIN WAVE DEVICE 有权
标题翻译：磁振动元件和旋转波形装置
公开(公告)号：US20120242438A1
公开(公告)日：2012-09-27
申请号：US13238631
申请日：2011-09-21
申请人： Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yoshinari Kurosaki
发明人： Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yoshinari Kurosaki
IPC分类号： H01F7/02
CPC分类号： H01F10/329 , G01R33/093 , G01R33/1284 , G11C11/161 , H01F10/3295 , H01L43/08 , H03B15/006
摘要： According to one embodiment, a magnetic oscillation element includes a first electrode/a second magnetic layer/a nonmagnetic spacer layer/a first magnetic layer/ a second electrode, stacked in this order. The first magnetic layer has variable magnetization direction. The second magnetic layer has fixed magnetization direction. A thickness of the first magnetic layer in a direction connecting the first and second electrodes is greater than 2 times a spin penetration depth of the first magnetic layer. The thickness of the first magnetic layer is less than a maximum width of the second electrode. The first magnetic layer has edge portion provided outside the first surface when viewed along the direction. A width of the edge portion in a direction perpendicular to a tangent of an edge of the second electrode is not less than an exchange length of the first magnetic layer.
摘要翻译：根据一个实施例，磁振荡元件包括依次堆叠的第一电极/第二磁性层/非磁性间隔层/第一磁性层/第二电极。第一磁性层具有可变的磁化方向。第二磁性层具有固定的磁化方向。连接第一和第二电极的方向上的第一磁性层的厚度大于第一磁性层的自旋穿透深度的2倍。第一磁性层的厚度小于第二电极的最大宽度。当沿该方向观察时，第一磁性层具有设置在第一表面之外的边缘部分。边缘部分在与第二电极的边缘的切线垂直的方向上的宽度不小于第一磁性层的交换长度。

2. 发明授权

US08644057B2 Magnetic memory and magnetic memory apparatus 有权
标题翻译：磁记忆体和磁记忆装置
公开(公告)号：US08644057B2
公开(公告)日：2014-02-04
申请号：US13235664
申请日：2011-09-19
申请人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura , Yoshinari Kurosaki
发明人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura , Yoshinari Kurosaki
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L29/82 , H01L43/08
摘要： A magnetic memory includes a first magnetic layer, a second magnetic layer, a third magnetic layer, a first intermediate layer, a second intermediate layer, an insulator film, and an electrode. The third magnetic layer is provided between the first magnetic layer and the second magnetic layer in a first direction being perpendicular to the plane of both the first magnetic layer and the second magnetic layer. The insulator film is provided on the third magnetic layer in a second direction perpendicular to the first direction. The electrode is provided on the insulator film so that the insulator is sandwiched between the third magnetic layer and the electrode in the second direction. In addition, a positive voltage is applied to the electrode and a first current passes from the first magnetic layer to the second magnetic layer, thereby writing information to the second magnetic layer.
摘要翻译：磁存储器包括第一磁性层，第二磁性层，第三磁性层，第一中间层，第二中间层，绝缘膜和电极。第三磁性层在垂直于第一磁性层和第二磁性层的平面的第一方向上设置在第一磁性层和第二磁性层之间。绝缘体膜在与第一方向垂直的第二方向上设置在第三磁性层上。电极设置在绝缘膜上，使得绝缘体沿第二方向被夹在第三磁性层和电极之间。此外，向电极施加正电压，并且第一电流从第一磁性层流到第二磁性层，从而将信息写入第二磁性层。

3. 发明授权

US08569852B2 Magnetic oscillation element and spin wave device 有权
标题翻译：磁振动元件和自旋波装置
公开(公告)号：US08569852B2
公开(公告)日：2013-10-29
申请号：US13238631
申请日：2011-09-21
申请人： Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yoshinari Kurosaki
发明人： Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yoshinari Kurosaki
IPC分类号： H01F7/02 , H01L29/82 , G11C11/15
CPC分类号： H01F10/329 , G01R33/093 , G01R33/1284 , G11C11/161 , H01F10/3295 , H01L43/08 , H03B15/006
摘要： According to one embodiment, a magnetic oscillation element includes a first electrode/a second magnetic layer/a nonmagnetic spacer layer/a first magnetic layer/a second electrode, stacked in this order. The first magnetic layer has variable magnetization direction. The second magnetic layer has fixed magnetization direction. A thickness of the first magnetic layer in a direction connecting the first and second electrodes is greater than 2 times a spin penetration depth of the first magnetic layer. The thickness of the first magnetic layer is less than a maximum width of the second electrode. The first magnetic layer has edge portion provided outside the first surface when viewed along the direction. A width of the edge portion in a direction perpendicular to a tangent of an edge of the second electrode is not less than an exchange length of the first magnetic layer.
摘要翻译：根据一个实施例，磁振荡元件包括依次堆叠的第一电极/第二磁性层/非磁性间隔层/第一磁性层/第二电极。第一磁性层具有可变的磁化方向。第二磁性层具有固定的磁化方向。连接第一和第二电极的方向上的第一磁性层的厚度大于第一磁性层的自旋穿透深度的2倍。第一磁性层的厚度小于第二电极的最大宽度。当沿该方向观察时，第一磁性层具有设置在第一表面之外的边缘部分。边缘部分在与第二电极的边缘的切线垂直的方向上的宽度不小于第一磁性层的交换长度。

4. 发明申请

US20120224416A1 MAGNETIC MEMORY AND MAGNETIC MEMORY APPARATUS 有权
标题翻译：磁记忆和磁记忆装置
公开(公告)号：US20120224416A1
公开(公告)日：2012-09-06
申请号：US13235664
申请日：2011-09-19
申请人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura , Yoshinari Kurosaki
发明人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura , Yoshinari Kurosaki
IPC分类号： G11C11/16 , H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L29/82 , H01L43/08
摘要： A magnetic memory includes a first magnetic layer, a second magnetic layer, a third magnetic layer, a first intermediate layer, a second intermediate layer, an insulator film, and an electrode. The third magnetic layer is provided between the first magnetic layer and the second magnetic layer in a first direction being perpendicular to the plane of both the first magnetic layer and the second magnetic layer. The insulator film is provided on the third magnetic layer in a second direction perpendicular to the first direction. The electrode is provided on the insulator film so that the insulator is sandwiched between the third magnetic layer and the electrode in the second direction. In addition, a positive voltage is applied to the electrode and a first current passes from the first magnetic layer to the second magnetic layer, thereby writing information to the second magnetic layer.
摘要翻译：磁存储器包括第一磁性层，第二磁性层，第三磁性层，第一中间层，第二中间层，绝缘膜和电极。第三磁性层在与第一磁性层和第二磁性层的平面垂直的第一方向上设置在第一磁性层和第二磁性层之间。绝缘体膜在与第一方向垂直的第二方向上设置在第三磁性层上。电极设置在绝缘膜上，使得绝缘体沿第二方向被夹在第三磁性层和电极之间。此外，向电极施加正电压，并且第一电流从第一磁性层流到第二磁性层，从而将信息写入第二磁性层。

5. 发明申请

US20070223150A1 Magnetoresistive effect element, magnetic head, and magnetic disk apparatus 有权
标题翻译：磁阻效应元件，磁头和磁盘装置
公开(公告)号：US20070223150A1
公开(公告)日：2007-09-27
申请号：US11546975
申请日：2006-10-13
申请人： Hideaki Fukuzawa , Yoshinari Kurosaki , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Yoshinari Kurosaki , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3903 , B82Y25/00 , G01R33/093 , G11B5/398 , G11B5/455 , G11C11/16 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L43/08
摘要： A magnetoresistive effect element includes a magnetization fixed layer including a first crystal grain, having a magnetization direction which is fixed substantially in one direction, a spacer layer arranged on the magnetization fixed layer and having an insulating layer and a metal conductor penetrating the insulating layer, and a magnetization free layer including a second crystal grain, arranged on the spacer layer to oppose the metal conductor and having a magnetization direction which changes corresponding to an external magnetic field.
摘要翻译：磁阻效应元件包括：磁化固定层，包括具有大致沿一个方向固定的磁化方向的第一晶粒;布置在磁化固定层上并具有绝缘层和贯穿绝缘层的金属导体的间隔层; 以及包含第二晶粒的无磁化层，其布置在所述间隔层上以与所述金属导体相对并且具有对应于外部磁场变化的磁化方向。

6. 发明授权

US08419412B2 Nano-imprint mold and substrate with uneven patterns manufactured by using the mold 有权
标题翻译：纳米压印模具和使用模具制造的不均匀图案的基板
公开(公告)号：US08419412B2
公开(公告)日：2013-04-16
申请号：US13422897
申请日：2012-03-16
申请人： Yuichi Ohsawa , Junichi Ito , Tomotaka Ariga , Yoshinari Kurosaki , Saori Kashiwada
发明人： Yuichi Ohsawa , Junichi Ito , Tomotaka Ariga , Yoshinari Kurosaki , Saori Kashiwada
IPC分类号： B29C59/00
CPC分类号： B29C59/022 , B29C2059/023 , Y10T428/24355
摘要： According to one embodiment, a nano-imprint mold includes plural pairs of first and second protrusions formed on a base layer, each of which is formed along the same straight line. Each protrusion has a top surface and four side surfaces. The first and second protrusions are mirror-symmetrical with each other. A first side surface of the first protrusion and a second side surface of the second protrusion face each other. A first angle between the first side surface or the second side surface and a main surface of the base layer is not less than 85° and not more than 90°. A second angle between a third side surface in the first protrusion or a fourth side surface in the second protrusion and the main surface of the base layer is not less than 70° and not more than 88°. The first angle is larger than the second angle.
摘要翻译：根据一个实施例，纳米压印模具包括形成在基底层上的多对第一和第二突起，其中每一个沿着相同的直线形成。每个突起具有顶表面和四个侧表面。第一和第二突起彼此镜像对称。第一突起的第一侧表面和第二突起的第二侧表面彼此面对。第一侧表面或第二侧表面与基层的主表面之间的第一角度不小于85°且不大于90°。第一突起中的第三侧表面或第二突起中的第四侧表面与基底层的主表面之间的第二角度不小于70°且不大于88°。第一角度大于第二角度。

7. 发明授权

US08379351B2 Magneto-resistance effect element, and method for manufacturing the same 有权
标题翻译：磁阻效应元件及其制造方法
公开(公告)号：US08379351B2
公开(公告)日：2013-02-19
申请号：US12073895
申请日：2008-03-11
申请人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Kunliang Zhang , Min Li , Michiko Hara , Yoshinari Kurosaki
发明人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Kunliang Zhang , Min Li , Michiko Hara , Yoshinari Kurosaki
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3909 , G11B2005/3996 , H01L43/08 , Y10S977/943
摘要： An example magneto-resistance effect element includes a fixed magnetization layer of which a magnetization is substantially fixed in one direction; a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer; and a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof and which is located between the fixed magnetization layer and the free magnetization layer. A thin film layer is located on a side opposite to the spacer layer relative to the free magnetization layer and a functional layer containing at least one element selected from the group consisting of Si, Mg, B, Al is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer.
摘要翻译：一个示例性磁阻效应元件包括一个固定的磁化层，其磁化强度基本上固定在一个方向上; 自由磁化层，其磁化根据外部磁场而旋转并与固定磁化层相对形成; 以及间隔层，其包括具有绝缘层的电流限制层和导体，以使电流在其厚度方向上穿过绝缘层，并且位于固定磁化层和自由磁化层之间。薄膜层相对于自由磁化层位于与间隔层相反的一侧，并且包含至少一种选自Si，Mg，B，Al的元素的功能层形成在至少一个的固定磁化层，自由磁化层和薄膜层。

8. 发明申请

US20120196084A1 NANO-IMPRINT MOLD AND SUBSTRATE WITH UNEVEN PATTERNS MANUFACTURED BY USING THE MOLD 有权
标题翻译：使用模具制造的未加工图案的纳米印模和基材
公开(公告)号：US20120196084A1
公开(公告)日：2012-08-02
申请号：US13422897
申请日：2012-03-16
申请人： Yuichi OHSAWA , Junichi Ito , Tomotaka Ariga , Yoshinari Kurosaki , Saori Kashiwada
发明人： Yuichi OHSAWA , Junichi Ito , Tomotaka Ariga , Yoshinari Kurosaki , Saori Kashiwada
IPC分类号： B29C59/02 , B32B3/10 , B82Y40/00
CPC分类号： B29C59/022 , B29C2059/023 , Y10T428/24355
摘要： According to one embodiment, a nano-imprint mold includes plural pairs of first and second protrusions formed on a base layer, each of which is formed along the same straight line. Each protrusion has a top surface and four side surfaces. The first and second protrusions are mirror-symmetrical with each other. A first side surface of the first protrusion and a second side surface of the second protrusion face each other. A first angle between the first side surface or the second side surface and a main surface of the base layer is not less than 85° and not more than 90°. A second angle between a third side surface in the first protrusion or a fourth side surface in the second protrusion and the main surface of the base layer is not less than 70° and not more than 88°. The first angle is larger than the second angle.
摘要翻译：根据一个实施例，纳米压印模具包括形成在基底层上的多对第一和第二突起，其中每一个沿着相同的直线形成。每个突起具有顶表面和四个侧表面。第一和第二突起彼此镜像对称。第一突起的第一侧表面和第二突起的第二侧表面彼此面对。第一侧表面或第二侧表面与基层的主表面之间的第一角度不小于85°且不大于90°。第一突起中的第三侧表面或第二突起中的第四侧表面与基底层的主表面之间的第二角度不小于70°且不大于88°。第一角度大于第二角度。

9. 发明申请

US20080239591A1 Magneto-resistance effect element, and method for manufacturing the same 有权
标题翻译：磁阻效应元件及其制造方法
公开(公告)号：US20080239591A1
公开(公告)日：2008-10-02
申请号：US12073895
申请日：2008-03-11
申请人： Yoshihiko Fuji , Hideaki Fukuzama , Hiromi Yuasa , Kunliang Zhang , Min Li , Michiko Hara , Yoshinari Kurosaki
发明人： Yoshihiko Fuji , Hideaki Fukuzama , Hiromi Yuasa , Kunliang Zhang , Min Li , Michiko Hara , Yoshinari Kurosaki
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3909 , G11B2005/3996 , H01L43/08 , Y10S977/943
摘要： A magneto-resistance effect element, including:a fixed magnetization layer of which a magnetization is substantially fixed in one direction; a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer; a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof and which is located between the fixed magnetization layer and the free magnetization layer; a thin film layer which is located in a side opposite to the spacer layer relative to the free magnetization layer; and a functional layer containing at least one element selected from the group consisting of Si, Mg, B, Al which is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer.
摘要翻译：一种磁电阻效应元件，包括：固定磁化层，其一个方向上的磁化基本固定; 自由磁化层，其磁化根据外部磁场而旋转并与固定磁化层相对形成; 间隔层，其包括具有绝缘层的电流限制层和导体，以使电流在其厚度方向上穿过绝缘层并位于固定磁化层和自由磁化层之间; 薄膜层，相对于自由磁化层位于与间隔层相反的一侧; 以及功能层，其含有选自由固定磁化层，自由磁化层和薄膜层中的至少一个中形成的Si，Mg，B，Al中的至少一种元素。

10. 发明授权

US08917485B2 Magnetoresistive effect element, magnetic head, and magnetic disk apparatus 有权
标题翻译：磁阻效应元件，磁头和磁盘装置
公开(公告)号：US08917485B2
公开(公告)日：2014-12-23
申请号：US11546975
申请日：2006-10-13
申请人： Hideaki Fukuzawa , Yoshinari Kurosaki , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Yoshinari Kurosaki , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
IPC分类号： G11B5/33 , G01R33/09 , G11B5/39 , G11C11/16 , H01L43/08 , H01F10/32 , B82Y25/00 , G11B5/455
CPC分类号： G11B5/3903 , B82Y25/00 , G01R33/093 , G11B5/398 , G11B5/455 , G11C11/16 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L43/08
摘要： A magnetoresistive effect element includes a magnetization fixed layer including a first crystal grain, having a magnetization direction which is fixed substantially in one direction, a spacer layer arranged on the magnetization fixed layer and having an insulating layer and a metal conductor penetrating the insulating layer, and a magnetization free layer including a second crystal grain, arranged on the spacer layer to oppose the metal conductor and having a magnetization direction which changes corresponding to an external magnetic field.
摘要翻译：磁阻效应元件包括：磁化固定层，包括具有大致沿一个方向固定的磁化方向的第一晶粒;布置在磁化固定层上并具有绝缘层和贯穿绝缘层的金属导体的间隔层; 以及包含第二晶粒的无磁化层，其布置在所述间隔层上以与所述金属导体相对并且具有对应于外部磁场变化的磁化方向。

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