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1. 发明申请

US20090087369A1 FLUOROAPATITE DRIED PARTICLES AND ADSORPTION APPARATUS 审中-公开
标题翻译：氟化物干燥颗粒和吸附装置
公开(公告)号：US20090087369A1
公开(公告)日：2009-04-02
申请号：US12240152
申请日：2008-09-29
申请人： Tsuyoshi ISHIKAWA , Yoshiyuki OGAWARA , Tomohiko YOSHITAKE , Yukiko MURAKAMI
发明人： Tsuyoshi ISHIKAWA , Yoshiyuki OGAWARA , Tomohiko YOSHITAKE , Yukiko MURAKAMI
IPC分类号： C01B25/32
CPC分类号： B01J20/048 , B01J20/28004 , B01J20/282 , C01B25/32 , C01B25/321 , C01B25/324
摘要： Fluoroapatite dried particles are obtained by reacting hydroxyapatite primary particles having hydroxyl groups and hydrogen fluoride molecules having fluorine atoms so that at least one of hydroxyl groups of hydroxyapatite primary particles are substituted by the fluorine atoms of the hydrogen fluoride molecules. The fluoroapatite dried particles can exhibit superior acid resistance. Further, an adsorption apparatus using such fluoroapatite dried particles is provided.
摘要翻译：通过使具有羟基的羟基磷灰石一次粒子和具有氟原子的氟化氢分子使羟基磷灰石一次粒子的至少一个羟基被氟化氢分子的氟原子取代，得到氟化磷灰石干燥粒子。氟磷灰石干燥颗粒可以表现出优异的耐酸性。此外，提供了使用这种氟磷灰石干燥颗粒的吸附装置。

2. 发明申请

US20100130353A1 METHOD OF PRODUCING FLUOROAPATITE, FLUOROAPATITE, AND ADSORTION APPARATUS 审中-公开
标题翻译：生产氟磷酸盐，氟化物和吸附装置的方法
公开(公告)号：US20100130353A1
公开(公告)日：2010-05-27
申请号：US12696431
申请日：2010-01-29
申请人： Tsuyoshi ISHIKAWA , Yoshiyuki Ogawara , Tomohiko Yoshitake , Yukiko Murakami
发明人： Tsuyoshi ISHIKAWA , Yoshiyuki Ogawara , Tomohiko Yoshitake , Yukiko Murakami
IPC分类号： C01B25/10 , B01J20/04
CPC分类号： C01B25/455 , B01J20/048 , B01J20/281 , B01J20/3028 , B01J20/3078
摘要： A method of producing a fluoroapatite is provided. The method comprises preparing a slurry containing a hydroxyapatite which has at least one hydroxyl group, preparing a hydrogen fluoride-containing solution containing a hydrogen fluoride, mixing the hydrogen fluoride-containing solution with the slurry to obtain a mixture to thereby adjust a pH of the mixture in the range of 2.5 to 5, and reacting the hydroxyapatite with the hydrogen fluoride in the mixture in a state that the pH of the mixture is adjusted within the above range to thereby obtain the fluoroapatite by substituting the at least one hydroxyl group of the hydroxyapatite with fluorine atom of the hydrogen fluoride. The method can produce the fluoroapatite having improved acid resistance by reducing an impurity, such as ammonia, derived from a raw material to a low or very low level. Further, a fluoroapatite having high acid resistance is also provided. Furthermore, an adsorption apparatus using such a fluoroapatite is provided.
摘要翻译：提供一种制备氟磷灰石的方法。该方法包括制备含有至少一个羟基的羟基磷灰石的浆料，制备含氟化氢的含氟化氢溶液，将含氟化氢的溶液与浆料混合，得到混合物，从而调节混合物在2.5至5的范围内，并且使混合物中的羟基磷灰石与氟化氢在调节到上述范围内的状态下反应，从而通过将该磷灰石的至少一个羟基取代羟基磷灰石与氟化氢的氟原子。该方法可以通过将源自原料的诸如氨的杂质还原到低或非常低的水平来产生具有改善的耐酸性的氟磷灰石。此外，还提供了具有高耐酸性的氟磷灰石。此外，提供了使用这种氟磷灰石的吸附装置。

3. 发明申请

US20090148376A1 METHOD OF PRODUCING FLUOROAPATITE, FLUOROAPATITE, AND ADSORPTION APPARATUS 有权
标题翻译：生产氟磷酸盐，氟化物和吸附装置的方法
公开(公告)号：US20090148376A1
公开(公告)日：2009-06-11
申请号：US12184459
申请日：2008-08-01
申请人： Tsuyoshi ISHIKAWA , Yoshiyuki OGAWARA , Tomohiko YOSHITAKE , Yukiko MURAKAMI
发明人： Tsuyoshi ISHIKAWA , Yoshiyuki OGAWARA , Tomohiko YOSHITAKE , Yukiko MURAKAMI
IPC分类号： C01B25/10
CPC分类号： C01B25/455 , B01J20/048 , B01J20/281 , B01J20/3028 , B01J20/3078
摘要： A method of producing a fluoroapatite is provided. The method comprises preparing a slurry containing a hydroxyapatite which has at least one hydroxyl group, preparing a hydrogen fluoride-containing solution containing a hydrogen fluoride, mixing the hydrogen fluoride-containing solution with the slurry to obtain a mixture to thereby adjust a pH of the mixture in the range of 2.5 to 5, and reacting the hydroxyapatite with the hydrogen fluoride in the mixture in a state that the pH of the mixture is adjusted within the above range to thereby obtain the fluoroapatite by substituting the at least one hydroxyl group of the hydroxyapatite with fluorine atom of the hydrogen fluoride. The method can produce the fluoroapatite having improved acid resistance by reducing an impurity, such as ammonia, derived from a raw material to a low or very low level. Further, a fluoroapatite having high acid resistance is also provided. Furthermore, an adsorption apparatus using such a fluoroapatite is provided.
摘要翻译：提供一种制备氟磷灰石的方法。该方法包括制备含有至少一个羟基的羟基磷灰石的浆料，制备含氟化氢的含氟化氢溶液，将含氟化氢的溶液与浆料混合，得到混合物，从而调节混合物在2.5至5的范围内，并且使混合物中的羟基磷灰石与氟化氢在调节到上述范围内的状态下反应，从而通过将该磷灰石的至少一个羟基取代羟基磷灰石与氟化氢的氟原子。该方法可以通过将源自原料的诸如氨的杂质还原到低或非常低的水平来产生具有改善的耐酸性的氟磷灰石。此外，还提供了具有高耐酸性的氟磷灰石。此外，提供了使用这种氟磷灰石的吸附装置。

4. 发明申请

US20090060814A1 METHOD OF PRODUCING FLUOROAPATITE, FLUOROAPATITE, AND ADSORPTION APPARATUS 有权
标题翻译：生产氟磷酸盐，氟化物和吸附装置的方法
公开(公告)号：US20090060814A1
公开(公告)日：2009-03-05
申请号：US12199112
申请日：2008-08-27
申请人： Tsuyoshi ISHIKAWA , Yoshiyuki OGAWARA , Tomohiko YOSHITAKE , Yukiko MURAKAMI
发明人： Tsuyoshi ISHIKAWA , Yoshiyuki OGAWARA , Tomohiko YOSHITAKE , Yukiko MURAKAMI
IPC分类号： C01B25/10
CPC分类号： B01J20/048 , C01B25/455
摘要： A method of producing fluoroapatite by using a calcium-based compound containing calcium, hydrogen fluoride and phosphoric acid is provided. The method can be produced fluoroapatite having improved acid resistance by reducing an amount of an impurity derived from a raw material to a low or very low level, and ability capable of separating a large amount of a protein due to a large specific surface area thereof. Further, fluoroapatite having high acid resistance and a large specific surface area is also provided. Furthermore, an adsorption apparatus using such fluoroapatite is also provided.
摘要翻译：提供了通过使用含有钙，氟化氢和磷酸的钙基化合物制备氟磷灰石的方法。该方法可以通过将从原料衍生的杂质的量减少至低或非常低的水平，以及由于其大的比表面积而能够分离大量蛋白质的能力，可以制备具有改善的耐酸性的氟磷灰石。此外，还提供了具有高耐酸性和大比表面积的氟磷灰石。此外，还提供了使用这种氟磷灰石的吸附装置。

5. 发明申请

US20100255306A1 METHOD OF PRODUCING FLUOROAPATITE POWDER, FLUOROAPATITE POWDER, AND ADSORPTION APPARATUS 审中-公开
标题翻译：生产荧光粉，荧光粉和吸附装置的方法
公开(公告)号：US20100255306A1
公开(公告)日：2010-10-07
申请号：US12568753
申请日：2009-09-29
申请人： Tsuyoshi ISHIKAWA , Yoshiyuki OGAWARA , Tomohiko YOSHITAKE , Yukiko MURAKAMI
发明人： Tsuyoshi ISHIKAWA , Yoshiyuki OGAWARA , Tomohiko YOSHITAKE , Yukiko MURAKAMI
IPC分类号： C01B25/32
CPC分类号： C01B25/32 , B01J20/048 , B01J20/28004 , B01J20/28011 , B01J20/282 , B01J2220/52 , B01J2220/56 , Y10T428/2982
摘要： A method of producing fluoroapatite powder by using a calcium compound, a phosphate compound, and a fluorine compound as a raw material is provided. The method comprises: preparing a slurry containing fluoroapatite produced from the raw material by using a wet process; applying an ultrasonic wave to the slurry; and drying the slurry to obtain the fluoroapatite powder mainly constituted of the fluoroapatite. The method provides fluoroapatite powder having improved particle strength. Further, an adsorption apparatus including the fluoroapatite powder is also provided.
摘要翻译：提供了通过使用钙化合物，磷酸盐化合物和氟化合物作为原料生产氟磷灰石粉末的方法。该方法包括：通过使用湿法制备含有由原料生产的氟磷灰石的浆料; 向浆料施加超声波; 并干燥该浆料，得到主要由氟磷灰石构成的氟磷灰石粉末。该方法提供具有改善的粒子强度的氟磷灰石粉末。此外，还提供了包含该氟磷灰石粉末的吸附装置。

6. 发明申请

US20200304661A1 IMAGE FORMING APPARATUS, INFORMATION PROCESSING METHOD, AND RECORDING MEDIUM 审中-公开
公开(公告)号：US20200304661A1
公开(公告)日：2020-09-24
申请号：US16818260
申请日：2020-03-13
申请人： Tsuyoshi ISHIKAWA
发明人： Tsuyoshi ISHIKAWA
IPC分类号： H04N1/00 , G06F3/12
摘要： An image forming apparatus according to an embodiment of the present disclosure includes a memory and a hardware processor coupled to the memory. The hardware processor is configured to: cause a display device to display a setting screen for receiving individual setting values for a plurality of setting items; receive, from a user, individual setting values for a first item, a second item, and a third item in the setting items through the setting screen; specify a recommended setting value for the third item, based on the received setting values for the first item and the second item; and control, upon receiving the setting values for the first item and the second item from the user, display of information for receiving a setting value for the third item included in the setting screen based on the recommended setting value.

7. 发明申请

US20120297343A1 ELECTRONIC APPARATUS, PROGRAM, AND CONTROL METHOD 有权
标题翻译：电子设备，程序和控制方法
公开(公告)号：US20120297343A1
公开(公告)日：2012-11-22
申请号：US13466936
申请日：2012-05-08
申请人： Tsuyoshi ISHIKAWA , Tomohisa TANAKA , Qihong WANG , Akihiro KOMORI
发明人： Tsuyoshi ISHIKAWA , Tomohisa TANAKA , Qihong WANG , Akihiro KOMORI
IPC分类号： G06F3/048
CPC分类号： G06F21/36 , G06F3/04883 , G06F2203/04808
摘要： An electronic apparatus includes a display unit, a sensor, and a controller. The display unit includes a screen. The sensor is configured to detect a user operation with respect to the screen and output a signal corresponding to the user operation. The controller is configured to cause a data icon and an access authority editing icon for editing an access authority of data related to the data icon to be displayed on the screen, judge a user operation with respect to the access authority editing icon based on the signal from the sensor, and change a state of the access authority of the data related to the data icon according to the user operation.
摘要翻译：电子设备包括显示单元，传感器和控制器。显示单元包括一个屏幕。传感器被配置为检测用户对屏幕的操作并输出与用户操作相对应的信号。控制器被配置为引起数据图标和访问权限编辑图标，用于编辑与数据图标相关的数据的访问权限以显示在屏幕上，基于该信号来判断关于访问权限编辑图标的用户操作并且根据用户操作改变与数据图标相关的数据的访问权限的状态。

8. 发明申请

US20120273801A1 SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：硅碳化硅半导体器件
公开(公告)号：US20120273801A1
公开(公告)日：2012-11-01
申请号：US13450639
申请日：2012-04-19
申请人： Hiroki WATANABE , Shinichiro MIYAHARA , Masahiro SUGIMOTO , Hidefumi TAKAYA , Yukihiko WATANABE , Narumasa SOEJIMA , Tsuyoshi ISHIKAWA
发明人： Hiroki WATANABE , Shinichiro MIYAHARA , Masahiro SUGIMOTO , Hidefumi TAKAYA , Yukihiko WATANABE , Narumasa SOEJIMA , Tsuyoshi ISHIKAWA
IPC分类号： H01L29/24
CPC分类号： H01L29/7813 , H01L29/045 , H01L29/0634 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/7397
摘要： A SiC semiconductor device includes: a SiC substrate including a first or second conductive type layer and a first conductive type drift layer and including a principal surface having an offset direction; a trench disposed on the drift layer and having a longitudinal direction; and a gate electrode disposed in the trench via a gate insulation film. A sidewall of the trench provides a channel formation surface. The vertical semiconductor device flows current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode. The offset direction of the SiC substrate is perpendicular to the longitudinal direction of the trench.
摘要翻译： SiC半导体器件包括：SiC衬底，包括第一或第二导电类型层和第一导电类型漂移层，并且包括具有偏移方向的主表面; 设置在所述漂移层上并具有纵向方向的沟槽; 以及通过栅极绝缘膜设置在沟槽中的栅电极。沟槽的侧壁提供通道形成表面。垂直半导体器件根据施加到栅电极的栅极电压与沟道形成表面一起流动电流。 SiC衬底的偏移方向垂直于沟槽的纵向方向。

9. 发明申请

US20120304268A1 INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, PROGRAM, AND INFORMATION PROCESSING SYSTEM 有权
标题翻译：信息处理装置，信息处理方法，程序和信息处理系统
公开(公告)号：US20120304268A1
公开(公告)日：2012-11-29
申请号：US13474333
申请日：2012-05-17
申请人： Akihiro KOMORI , Qihong WANG , Tomohisa TANAKA , Tsuyoshi ISHIKAWA
发明人： Akihiro KOMORI , Qihong WANG , Tomohisa TANAKA , Tsuyoshi ISHIKAWA
IPC分类号： G06F21/00 , G06F7/04
CPC分类号： G06F21/36
摘要： An information processing apparatus includes a communication unit for communicating with another information processing apparatus and a determination unit for determining whether or not to authenticate the other information processing apparatus on the basis of an operation pattern reported to a user and an analysis result of the user's operation corresponding to the operation pattern.
摘要翻译：一种信息处理装置，包括：通信单元，用于与另一个信息处理装置进行通信;以及确定单元，用于基于向用户报告的操作模式和用户操作的分析结果来确定是否对其他信息处理装置进行认证对应于操作模式。

10. 发明申请

US20120142173A1 MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL 有权
标题翻译：碳化硅单晶的制造方法
公开(公告)号：US20120142173A1
公开(公告)日：2012-06-07
申请号：US13308721
申请日：2011-12-01
申请人： Hiroki WATANABE , Yasuo KITOU , Yasushi FURUKAWA , Kensaku YAMAMOTO , Hidefumi TAKAYA , Masahiro SUGIMOTO , Yukihiko WATANABE , Narumasa SOEJIMA , Tsuyoshi ISHIKAWA
发明人： Hiroki WATANABE , Yasuo KITOU , Yasushi FURUKAWA , Kensaku YAMAMOTO , Hidefumi TAKAYA , Masahiro SUGIMOTO , Yukihiko WATANABE , Narumasa SOEJIMA , Tsuyoshi ISHIKAWA
IPC分类号： H01L21/20 , C30B25/20 , C30B25/02
CPC分类号： H01L21/0262 , C30B25/186 , C30B29/36 , H01L21/02378 , H01L21/0243 , H01L21/02529 , H01L21/02658 , H01L21/046 , H01L21/0475 , H01L29/04
摘要： A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other.
摘要翻译： SiC单晶的制造方法包括制备SiC衬底，将离子注入到SiC衬底的表面部分中以形成离子注入层，通过退火激活注入到SiC衬底的表面部分中的离子，化学蚀刻表面以形成由SiC衬底中的螺纹位错引起的蚀刻坑，并且在SiC衬底的表面上进行SiC的外延生长以形成SiC生长层，所述SiC生长层包括蚀刻的内壁以使得在蚀刻坑的内壁上生长的SiC生长层的部分彼此连接的方式形成凹坑。

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