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    • 1. 发明授权
    • Method for production of metal powder
    • 金属粉末生产工艺
    • US06372015B1
    • 2002-04-16
    • US09463563
    • 2000-01-27
    • Tsuyoshi AsaiHideo TakatoriWataru Kagohashi
    • Tsuyoshi AsaiHideo TakatoriWataru Kagohashi
    • B22F912
    • B22F9/28
    • A process for production of metallic powder comprising contacting a metallic chloride gas with a reductive gas in a temperature range for a reducing reaction to form a metallic powder and subsequently contacting the metallic powder with an inert gas such as nitrogen gas to cool the powder, wherein the rate of cooling is 30° C. or more for temperatures from the temperature range for the reducing reaction to a temperature of 800°C. or less. The metallic powder is rapidly cooled, which results in suppression of agglomeration of particles in the metallic powder and the growth of secondary particles. Growth of particles of a metallic powder formed in a reduction process into secondary particles through agglomeration after the reduction process is suppressed, and a ultrafine metallic powder having a particle diameter of, for example, 1&mgr;m or less, can be reliably produced.
    • 一种金属粉末的制造方法,其特征在于,在还原反应的温度范围内使金属氯化物气体与还原性气体接触,形成金属粉末,随后使金属粉末与氮气等惰性气体接触,使粉末冷却, 对于从还原反应的温度范围到800℃的温度的温度,冷却速率为30℃以上。 或更少。 金属粉末被快速冷却,这导致抑制金属粉末中的颗粒附聚和二次颗粒的生长。 在还原处理后,通过还原过程中的附聚将在还原过程中形成的金属粉末的颗粒生长成二次颗粒,并且可以可靠地制造具有例如1μm或更小的粒径的超细金属粉末。
    • 6. 发明申请
    • PROCESS FOR PRODUCTION OF POLYSILICON AND SILICON TETRACHLORIDE
    • 生产聚硅氧烷和硅酮四氯化磷的方法
    • US20120261269A1
    • 2012-10-18
    • US13518395
    • 2010-12-22
    • Wataru KagohashiMatsuhide HorikawaKohsuke Kakiuchi
    • Wataru KagohashiMatsuhide HorikawaKohsuke Kakiuchi
    • C01B33/023C01B33/08C25C3/02C25C3/06C25C3/34
    • C01B33/025C01B33/033C01B33/035C01B33/10721
    • A process for production of polysilicon and silicon tetrachloride is provided in which a raw material that is supplied stably and is available at low cost can be used, chlorination reaction can be smoothly promoted, impurities generated after chlorination reaction can be controlled, and production efficiency is superior in a polysilicon producing step. The process includes a step of chlorination in which a granulated body consisting of silicon dioxide and carbon-containing material is chlorinated to generate silicon tetrachloride, a step of reduction in which silicon tetrachloride is reduced by a reducing metal to generate polysilicon, and a step of electrolysis in which chloride of the reducing metal by-produced in the reduction step is molten salt-electrolyzed to generate the reducing metal and chlorine gas. In the process, chlorine gas is supplied to the silicon dioxide and the carbon-containing material in the presence of oxygen gas, and these are reacted in the chlorination step, the reducing metal generated in the electrolysis step is reused in the reduction step as a reducing agent of silicon tetrachloride, and the chlorine gas generated in the electrolysis step is reused in the chlorination step.
    • 提供一种生产多晶硅和四氯化硅的方法,其中可以使用稳定供应并且可以低成本获得的原料,可以平稳地促进氯化反应,可以控制氯化反应后产生的杂质,生产效率为 优于多晶硅生产步骤。 该方法包括氯化步骤,其中将由二氧化硅和含碳材料组成的造粒体氯化以产生四氯化硅,还原其中四氯化硅由还原性金属还原以产生多晶硅的步骤,以及步骤 在还原步骤中副产的还原金属的氯化物进行熔融盐电解以产生还原金属和氯气的电解。 在该方法中,在氧气存在下,向二氧化硅和含碳材料供给氯气,并且在氯化工序中使其反应,在还原工序中生成的还原金属在还原工序中再利用 四氯化钛的还原剂,并且在电解步骤中产生的氯气在氯化步骤中重复使用。
    • 8. 发明授权
    • Barium titanate powder
    • 钛酸钡粉
    • US06284216B1
    • 2001-09-04
    • US09462659
    • 2000-01-12
    • Hideki SakaiMatsuhide HorikawaWataru Kagohashi
    • Hideki SakaiMatsuhide HorikawaWataru Kagohashi
    • C01G2300
    • H01G4/1227C01G23/006C01P2004/52C01P2004/62C01P2006/10C01P2006/40
    • A barium titanate powder has an average particle size ranging from 0.1-1.0 &mgr;m, a CV value (standard deviation of the particle size/the average particle size) of the particle size distribution being 40% or less, and a zeta-potential ranging from −30 to −60 mV measured by a laser Doppler method using electrophoresis at pH 6.4. The barium titanate powder is presintered at a temperature ranging from 900 to 1200° C. The barium titanate powder has superior dispersion characteristics in slurrying, and is capable of partly inhibiting agglomeration of the barium titanate after sintering. It is therefore suitable as materials for dielectric layers of multilayer ceramic capacitors. In particular, the barium titanate has a sintered density of 95% or more of the theoretical density thereof, and the dielectric constant is 4000 or more.
    • 钛酸钡粉末的平均粒径为0.1〜1.0μm,粒径分布的CV值(粒径/平均粒径的标准偏差)为40%以下,ζ电位范围为 通过激光多普勒法在pH6.4下使用电泳测量-30至-60mV。 钛酸钡粉末在900〜1200℃的温度下进行预烧结。钛酸钡粉末在制浆时具有优异的分散特性,能够部分抑制烧结后的钛酸钡的凝集。 因此,它适用于多层陶瓷电容器介质层的材料。 特别是钛酸钡的烧结密度为理论密度的95%以上,介电常数为4000以上。
    • 9. 发明授权
    • Metallic nickel powder and process for production thereof
    • 金属镍粉及其生产方法
    • US07261761B2
    • 2007-08-28
    • US10525963
    • 2003-07-18
    • Wataru KagohashiMitsugu Yoshida
    • Wataru KagohashiMitsugu Yoshida
    • B22F1/02
    • H01G4/0085B22F1/0088B22F1/02
    • A metallic nickel powder exhibits superior oxidation behavior and sintering behavior in a process for production of a multilayer ceramic capacitor, and as a result, can prevent delamination, a process for production of the metallic powder is provided. The metallic nickel powder is treated with a carbonic acid water solution. The metallic nickel powder has an average particle diameter of not more than 1.0 μm, oxygen content in a range of from 0.3 to 2.0 wt %, and oxide layer having a thickness in a range of from 2 to 10 nm over the entire surface. In the process for production of the metallic nickel powder, the powder is treated with a carbonic acid water solution and is heated in an oxidizing atmosphere.
    • 金属镍粉末在多层陶瓷电容器的制造方法中表现出优异的氧化性能和烧结性能,结果可以防止分层,提供金属粉末的制造方法。 金属镍粉末用碳酸水溶液处理。 金属镍粉末的平均粒径为1.0μm以下,氧含量为0.3〜2.0wt%,氧化物层的整个表面的厚度为2〜10nm。 在制造金属镍粉末的过程中,用碳酸水溶液处理粉末,并在氧化气氛中加热。