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1. 发明授权

US08759222B2 Method for fabrication of semiconductor device 失效
标题翻译：半导体器件制造方法
公开(公告)号：US08759222B2
公开(公告)日：2014-06-24
申请号：US11680709
申请日：2007-03-01
申请人： Tsutomu Shimayama , Takatoshi Kameshima , Masaki Okamoto
发明人： Tsutomu Shimayama , Takatoshi Kameshima , Masaki Okamoto
IPC分类号： H01L21/311
CPC分类号： H01L21/7682 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02351 , H01L21/31116 , H01L21/31633 , H01L21/31695 , H01L21/76808 , H01L21/76811 , H01L21/76825 , H01L21/76835 , H01L2221/1036 , H01L2221/1047
摘要： Disclosed herein is a method for fabrication of semiconductor device involving a first step of coating the substrate with a double-layered insulating film in laminate structure having the skeletal structure of inorganic material and a second step of etching the upper layer of the insulating film as far as the lower layer of the insulating film. In the method for fabrication of semiconductor device, the first step is carried out in such a way that the skeletal structure is incorporated with a pore-forming material of hydrocarbon compound so that one layer of the insulating film contains more carbon than the other layer of the insulating film.
摘要翻译：本发明公开了一种制造半导体器件的方法，该方法包括用具有无机材料的骨架结构的叠层结构中的双层绝缘膜涂覆基板的第一步骤，以及将绝缘膜的上层蚀刻到远处的第二步骤作为绝缘膜的下层。在半导体器件的制造方法中，第一步是以骨架结构与烃化合物的成孔材料结合的方式进行，使得一层绝缘膜含有比另一层更多的碳绝缘膜。

2. 发明申请

US20080254631A1 METHOD FOR FABRICATION OF SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件制造方法
公开(公告)号：US20080254631A1
公开(公告)日：2008-10-16
申请号：US11680709
申请日：2007-03-01
申请人： Tsutomu Shimayama , Takatoshi Kameshima , Masaki Okamoto
发明人： Tsutomu Shimayama , Takatoshi Kameshima , Masaki Okamoto
IPC分类号： H01L21/768
CPC分类号： H01L21/7682 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02351 , H01L21/31116 , H01L21/31633 , H01L21/31695 , H01L21/76808 , H01L21/76811 , H01L21/76825 , H01L21/76835 , H01L2221/1036 , H01L2221/1047
摘要： Disclosed herein is a method for fabrication of semiconductor device involving a first step of coating the substrate with a double-layered insulating film in laminate structure having the skeletal structure of inorganic material and a second step of etching the upper layer of the insulating film as far as the lower layer of the insulating film. In the method for fabrication of semiconductor device, the first step is carried out in such a way that the skeletal structure is incorporated with a pore-forming material of hydrocarbon compound so that one layer of the insulating film contains more carbon than the other layer of the insulating film.
摘要翻译：本发明公开了一种制造半导体器件的方法，该方法包括用具有无机材料的骨架结构的叠层结构中的双层绝缘膜涂覆基板的第一步骤，以及将绝缘膜的上层蚀刻到远处的第二步骤作为绝缘膜的下层。在半导体器件的制造方法中，第一步是以骨架结构与烃化合物的成孔材料结合的方式进行，使得一层绝缘膜含有比另一层更多的碳绝缘膜。

3. 发明授权

US07602061B2 Semiconductor device and method for manufacturing semiconductor device 失效
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US07602061B2
公开(公告)日：2009-10-13
申请号：US11846807
申请日：2007-08-29
申请人： Yoshihisa Kagawa , Tsutomu Shimayama , Takatoshi Kameshima
发明人： Yoshihisa Kagawa , Tsutomu Shimayama , Takatoshi Kameshima
IPC分类号： H01L23/48 , H01L21/28
CPC分类号： H01L23/53295 , H01L21/76811 , H01L21/7682 , H01L21/76832 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a semiconductor device including: an insulating film configured to be provided on a substrate and be porosified through decomposition and removal of a pore-forming material; a covering insulating film configured to be provided on the insulating film; and conductive layer patterns configured to be provided in the covering insulating film and the insulating film and reach the substrate, wherein the insulating film includes a non-porous region in which the pore-forming material remains.
摘要翻译：本发明公开了一种半导体器件，包括：绝缘膜，其被配置为设置在基板上，并通过分解除去成孔材料而使其致孔化; 构造成设置在所述绝缘膜上的覆盖绝缘膜; 以及配置为设置在覆盖绝缘膜和绝缘膜中并到达基板的导电层图案，其中绝缘膜包括残留成孔材料的无孔区域。

4. 发明申请

US20080054454A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20080054454A1
公开(公告)日：2008-03-06
申请号：US11846807
申请日：2007-08-29
申请人： Yoshihisa Kagawa , Tsutomu Shimayama , Takatoshi Kameshima
发明人： Yoshihisa Kagawa , Tsutomu Shimayama , Takatoshi Kameshima
IPC分类号： H01L21/4763 , H01L23/48
CPC分类号： H01L23/53295 , H01L21/76811 , H01L21/7682 , H01L21/76832 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a semiconductor device including: an insulating film configured to be provided on a substrate and be porosified through decomposition and removal of a pore-forming material; a covering insulating film configured to be provided on the insulating film; and conductive layer patterns configured to be provided in the covering insulating film and the insulating film and reach the substrate, wherein the insulating film includes a non-porous region in which the pore-forming material remains.
摘要翻译：本发明公开了一种半导体器件，包括：绝缘膜，其被配置为设置在基板上，并通过分解除去成孔材料而使其致孔化; 构造成设置在所述绝缘膜上的覆盖绝缘膜; 以及配置为设置在覆盖绝缘膜和绝缘膜中并到达基板的导电层图案，其中绝缘膜包括残留成孔材料的无孔区域。

5. 发明授权

US07803705B2 Manufacturing method of semiconductor device and film deposition system 有权
标题翻译：半导体器件和薄膜沉积系统的制造方法
公开(公告)号：US07803705B2
公开(公告)日：2010-09-28
申请号：US10585994
申请日：2005-01-13
申请人： Yasuo Kobayashi , Kenichi Nishizawa , Takatoshi Kameshima , Takaaki Matsuoka
发明人： Yasuo Kobayashi , Kenichi Nishizawa , Takatoshi Kameshima , Takaaki Matsuoka
IPC分类号： H01L21/4763 , H01L21/31
CPC分类号： H01L21/76835 , H01L21/02118 , H01L21/02126 , H01L21/02167 , H01L21/02274 , H01L21/31144 , H01L21/3127 , H01L21/3143 , H01L21/31633 , H01L21/76811 , H01L21/76832
摘要： A dielectric film (91) made of CF is deposited on a substrate. A protective layer comprising an SiCN film (93) is formed on the dielectric film (91). A film (94) serving as a hardmask made of SiCO is deposited on the protective layer by a plasma containing active species of silicon, carbon, and oxygen. When the protective layer is formed, an SiC film (92) is deposited on the dielectric film (91) by a plasma containing active species of silicon and carbon, and thereafter the SiCN film (93) is deposited on the SiC film (92) by a plasma containing active species of silicon, carbon, and nitrogen.
摘要翻译：由CF制成的电介质膜（91）沉积在基板上。在电介质膜（91）上形成包含SiCN膜（93）的保护层。作为由SiCO制成的硬掩模的膜（94）通过含有活性物质的硅，碳和氧的等离子体沉积在保护层上。当形成保护层时，通过含有活性物质的硅和碳的等离子体在电介质膜（91）上沉积SiC膜（92），然后将SiCN膜（93）沉积在SiC膜（92）上，通过含有硅，碳和氮的活性物质的等离子体。

6. 发明申请

US20070259131A1 Plasma-Assisted Deposition Method and System for Carrying Out the Same 审中-公开
标题翻译：等离子辅助沉积方法及其执行系统
公开(公告)号：US20070259131A1
公开(公告)日：2007-11-08
申请号：US11660649
申请日：2006-08-25
申请人： Yasuo Kobayashi , Kenichi Nishizawa , Takatoshi Kameshima , Ryuichiro Isaki , Manabu Shinriki
发明人： Yasuo Kobayashi , Kenichi Nishizawa , Takatoshi Kameshima , Ryuichiro Isaki , Manabu Shinriki
IPC分类号： H01L21/314 , H01L21/31 , H01L21/768
CPC分类号： H01L21/0212 , C23C16/26 , C23C16/4402 , H01L21/02274 , H01L21/3127
摘要： A fluorine-containing carbon film excellent in heat stability is formed by using C5F8 gas having a moisture content of 60×10−9 volume ratio or below. A purifier 2 packed with particles having hydrophilic or reducing surface layers is placed in a gas supply line connecting a process gas source 1 for supplying C5F8 gas and a film deposition unit 3 for depositing a fluorine-containing carbon film on a substrate by using a plasma produced by ionizing C5F8 gas. C5F8 gas is passed through the purifier 2 to remove moisture from the C5F8 gas. The C5F8 gas supplied to the film deposition unit 3 to deposit a fluorine-containing carbon film has a moisture content on the order of 20×10−9 volume ratio. A fluorine-containing carbon film thus deposited contains a very small amount of moisture. Consequently, desorption of fluorine due to moisture contained in the fluorine-containing carbon film when the fluorine-containing carbon film is heated by a subsequent heating process is not likely to occur and the fluorine-containing carbon film has high heat stability.
摘要翻译：通过使用水分含量为60×10 -9体积比的C 5 N 5 S 8气体形成热稳定性优异的含氟碳膜或以下。填充有具有亲水性或还原性表面层的颗粒的净化器2放置在连接用于供应C 5 C 8气体的处理气体源1和膜沉积物的气体供应管线单元3，用于通过使用通过电离C 5 C 8气体产生的等离子体在基板上沉积含氟碳膜。气体通过净化器2以从C 5 C 8气体中除去水分。供给到成膜单元3以沉积含氟碳膜的C 5 C 8 N 8气体的水分含量为20×10 -9 / SUP>体积比。这样沉积的含氟碳膜含有非常少量的水分。因此，通过随后的加热工序加热含氟碳膜时，由于含氟碳膜所含的水分的氟解吸不易发生，含氟碳膜的热稳定性高。

7. 发明授权

US07897205B2 Film forming method and film forming apparatus 有权
标题翻译：成膜方法和成膜装置
公开(公告)号：US07897205B2
公开(公告)日：2011-03-01
申请号：US11910983
申请日：2006-04-07
申请人： Takatoshi Kameshima , Kohei Kawamura , Yasuo Kobayashi
发明人： Takatoshi Kameshima , Kohei Kawamura , Yasuo Kobayashi
IPC分类号： C23C16/00
CPC分类号： C23C16/4404 , C23C16/4581 , H01L21/02167 , H01L21/02274 , H01L21/3185
摘要： A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table.
摘要翻译：一种成膜方法的特征在于该方法具有将包括无机硅烷气体的处理气体引入到其中布置由包括金属氧化物的陶瓷构成的安装台的处理室中的步骤，所述处理室包括具有含硅非金属薄膜的所述安装台的表面; 将要处理的基板安装在预先涂覆有非金属薄膜的安装台上的步骤; 以及将含有有机硅烷气体的处理气体导入处理室，在安装在安装台上的基板的表面上形成含硅非金属薄膜的工序。

8. 发明申请

US20090061092A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 有权
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：US20090061092A1
公开(公告)日：2009-03-05
申请号：US11910983
申请日：2006-04-07
申请人： Takatoshi Kameshima , Kohei Kawamura , Yasuo Kobayashi
发明人： Takatoshi Kameshima , Kohei Kawamura , Yasuo Kobayashi
IPC分类号： C23C16/36 , C23C16/42
CPC分类号： C23C16/4404 , C23C16/4581 , H01L21/02167 , H01L21/02274 , H01L21/3185
摘要： A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table.
摘要翻译：一种成膜方法的特征在于该方法具有将包括无机硅烷气体的处理气体引入到其中布置由包括金属氧化物的陶瓷构成的安装台的处理室中的步骤，所述处理室包括具有含硅非金属薄膜的所述安装台的表面; 将要处理的基板安装在预先涂覆有非金属薄膜的安装台上的步骤; 以及将含有有机硅烷气体的处理气体导入处理室，在安装在安装台上的基板的表面上形成含硅非金属薄膜的工序。

9. 发明申请

US20080254641A1 Manufacturing Method Of Semiconductor Device And Film Deposition System 有权
标题翻译：半导体器件和薄膜沉积系统的制造方法
公开(公告)号：US20080254641A1
公开(公告)日：2008-10-16
申请号：US10585994
申请日：2005-01-13
申请人： Yasuo Kobayashi , Kenichi Nishizawa , Takatoshi Kameshima , Takaaki Matsuoka
发明人： Yasuo Kobayashi , Kenichi Nishizawa , Takatoshi Kameshima , Takaaki Matsuoka
IPC分类号： H01L21/31 , C23C16/513
CPC分类号： H01L21/76835 , H01L21/02118 , H01L21/02126 , H01L21/02167 , H01L21/02274 , H01L21/31144 , H01L21/3127 , H01L21/3143 , H01L21/31633 , H01L21/76811 , H01L21/76832
摘要： A dielectric film (91) made of CF is deposited on a substrate. A protective layer comprising an SiCN film (93) is formed on the dielectric film (91). A film (94) serving as a hardmask made of SiCO is deposited on the protective layer by a plasma containing active species of silicon, carbon, and oxygen. When the protective layer is formed, an SiC film (92) is deposited on the dielectric film (91) by a plasma containing active species of silicon and carbon, and thereafter the SiCN film (93) is deposited on the SiC film (92) by a plasma containing active species of silicon, carbon, and nitrogen.
摘要翻译：由CF制成的电介质膜（91）沉积在基板上。在绝缘膜（91）上形成包含SiCN膜（93）的保护层。作为由SiCO制成的硬掩模的膜（94）通过含有活性物质的硅，碳和氧的等离子体沉积在保护层上。当形成保护层时，通过含有活性物质的硅和碳的等离子体在电介质膜（91）上沉积SiC膜（92），然后将SiCN膜（93）沉积在SiC膜（92）上，通过含有硅，碳和氮的活性物质的等离子体。

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