专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5370076A Method of producing single crystal of KTiOPO.sub.4 失效
标题翻译：生产KTiOPO4单晶的方法
公开(公告)号：US5370076A
公开(公告)日：1994-12-06
申请号：US056530
申请日：1993-05-05
申请人： Tsutomu Okamoto , Koji Watanabe , Tatsuo Fukui , Yasushi Minoya , Koichi Tatsuki , Shigeo Kubota
发明人： Tsutomu Okamoto , Koji Watanabe , Tatsuo Fukui , Yasushi Minoya , Koichi Tatsuki , Shigeo Kubota
IPC分类号： C30B15/00 , C30B9/00 , C30B29/22 , C30B29/32 , G02F1/35 , G02F1/355 , C30B9/12
CPC分类号： C30B9/00 , C30B29/14
摘要： A method of growing a single crystal of KTiOPO.sub.4 which is a nonlinear optical material is disclosed. Growth of the single crystal of KTiOPO.sub.4 is carried out by melting a KTiOPO.sub.4 material with a flux to produce a melt, then contacting a seed crystal to the melt, and by slowly cooling at a saturation temperature or below. At this time, molar fractions of K.sub.2 O, P.sub.2 O.sub.5 and TiO.sub.2 contained in the melt fall within a region surrounded by six point in a K.sub.2 O-P.sub.2 O.sub.5 -TiO.sub.2 ternary phase diagram of A (K.sub.2 O:0.4150, P.sub.2 O.sub.5 :0.3906, TiO.sub.2 : 0.1944), B (K.sub.2 O:0.3750, P.sub.2 O.sub.5 : 0.3565, TiO.sub.2 : 0.2685), C (K.sub.2 O: 0.3750, P.sub.2 O.sub.5 : 0.3438, TiO.sub.2 : 0.2813), D (K.sub.2 O: 0.3850, P.sub.2 O.sub.5 : 0.3260, TiO.sub.2 : 0.2890), E (K.sub.2 O: 0.4000, P.sub.2 O.sub.5 : 0.3344, TiO.sub.2 : 0.2656), and F (K.sub.2 O: 0.4158, P.sub.2 O.sub.5 : 0.3744, TiO.sub.2 : 0.2098). In addition, K.sub.15 P.sub.13 O.sub.40 or the same composition produced by melting is used as the flux, and the proportion of a KTiOPO.sub.4 element in a composition of the melt is prescribed to 83.5 to 90.0 mol %. The seed crystal is set so that a C axis is in a direction perpendicular to a melt surface. Then, the seed crystal contacted to the melt is rotated and slowly cooled. Thus, a single crystal of KTiOPO.sub.4 of single domain at the end of growth can be produced.
摘要翻译：公开了一种生长作为非线性光学材料的KTiOPO4单晶的方法。通过用助熔剂熔化KTiOPO 4材料以产生熔体，然后使晶种接触熔体，并通过在饱和温度或更低温度下缓慢冷却来进行KTiOPO4单晶的生长。此时，K2O，P2O5和TiO 2的摩尔分数在A（K2O：0.4150，P2O5：0.3906，TiO 2：0.1944），K 2 O 3的K 2 O 5 - （K2O：0.3750，P2O5：0.3565，TiO2：0.2685），C（K2O：0.3750，P2O5：0.3438，TiO2：0.2813），D（K2O：0.3850，P2O5：0.3260，TiO2：0.2890），E（K2O： P 2 O 5：0.3344，TiO 2：0.2656）和F（K 2 O：0.4158，P 2 O 5：0.3744，TiO 2：0.2098）。此外，将K15P13O40或通过熔融制造的相同组成用作助熔剂，并且将熔体组成中的KTiOPO 4元素的比例规定为83.5〜90.0mol％。晶种被设定为使得C轴在垂直于熔体表面的方向上。然后，将与熔体接触的晶种旋转并缓慢冷却。因此，可以生产在生长结束时单畴KTiOPO4的单晶。

2. 发明授权

US06248167B1 Method for single crystal growth and growth apparatus 有权
标题翻译：单晶生长和生长装置的方法
公开(公告)号：US06248167B1
公开(公告)日：2001-06-19
申请号：US09238901
申请日：1999-01-28
申请人： Tsutomu Okamoto , Koichi Tatsuki , Shigeo Kubota
发明人： Tsutomu Okamoto , Koichi Tatsuki , Shigeo Kubota
IPC分类号： C30B708
CPC分类号： C30B15/00 , C30B29/10
摘要： Disclosed is a method for the growth of a single crystal having excellent crystallinity, uniform quality in the inside thereof and hence excellently uniform optical properties, the method enabling an improvement in yields. The invention resides in a method for the growth of a single crystal of &bgr;-type barium borate (&bgr;-BaB2O4), the method comprising heating a crucible 6 indirectly to grow a &bgr;-BaB2O4 single crystal 21 from a melt of barium borate (BaB2O4) contained in the crucible and using no flux by using a seed crystal 9 of &bgr;-BaB2O4.
摘要翻译：公开了一种生长具有优异结晶性，在其内部质量均匀且因此具有优异均匀的光学性能的单晶的方法，该方法能够提高产量。本发明涉及一种用于生长β型硼酸钡（β-BaB 2 O 4）的单晶的方法，该方法包括间接加热坩埚6以从硼酸钡（BaB 2 O 4）的熔体中生长β-BaB 2 O 4单晶21 ），并且通过使用β-BaB 2 O 4的晶种9不使用助熔剂。

3. 发明授权

US5322588A Method for producing KTIOPO4 single crystal 失效
标题翻译：生产KTIOPO4单晶的方法
公开(公告)号：US5322588A
公开(公告)日：1994-06-21
申请号：US921230
申请日：1992-07-29
申请人： Kazutaka Habu , Tsutomu Okamoto , Koichi Aso , Koichi Tatsuki
发明人： Kazutaka Habu , Tsutomu Okamoto , Koichi Aso , Koichi Tatsuki
IPC分类号： C30B29/14 , C30B9/00 , G02F1/35 , G02F1/355 , C30B17/00
CPC分类号： C30B9/00 , C30B29/14
摘要： A method is provided for producing a KTiOPO.sub.4 which is grown at a temperature higher than its Curie temperature using a TSSG method. The grown KTiOPO.sub.4 single crystal is maintained in contact with a melt while the crystal is maintained at a temperature higher than the Curie temperature. A d.c. current is applied in this state across a seed crystal and the melt, while the single crystal is cooled to a temperature lower than the Curie temperature. The value of current density D, defined by the formula D=Ip/(a+b), where Ip is the impressed current and a, b are crystal sizes along a and b axes, respectively, is selected to be 0.01 mA/cm.sup.2 .ltoreq.D.ltoreq.1.0 mA/cm.sup.2. In this manner, the produced KTiOPO.sub.4 is processed into a single domain crystal.
摘要翻译：提供了一种制备KTiOPO4的方法，其使用TSSG方法在高于其居里温度的温度下生长。生长的KTiOPO4单晶保持与熔体接触，同时晶体保持在高于居里温度的温度。一个d.c. 在该状态下通过晶种和熔体施加电流，同时将单晶冷却至低于居里温度的温度。由式D = Ip /（a + b）定义的电流密度D的值，其中Ip是外加电流，a，b分别是沿a轴和b轴的晶体尺寸，选择为0.01mA / cm 2

4. 发明授权

US07060913B2 Measuring apparatus 失效
标题翻译：测量装置
公开(公告)号：US07060913B2
公开(公告)日：2006-06-13
申请号：US10790228
申请日：2004-03-02
申请人： Kaname Nishiue , Tsutomu Okamoto
发明人： Kaname Nishiue , Tsutomu Okamoto
IPC分类号： G01G19/00 , G01G11/00
CPC分类号： G01G11/04
摘要： A measuring apparatus includes a measuring conveyor measuring a weight of an article during transportation, a feed conveyor, a discharge conveyor, and a central conveyor extending in a transporting direction through the measuring conveyor. In a first transfer area where the article is transferred from the feed conveyor to the measuring conveyor and in a second transfer area where the article is transferred from the measuring conveyor to the discharge conveyor, level portions of a transporting surface of the central conveyor are located at the same level as that of the measuring conveyor. In a measuring area where the measuring conveyor is located, the lower portion of the transporting surface of the central conveyor is shifted downward from that of the measuring conveyor. The measuring apparatus can stably transport the article, suppress vibrations during transfer to and from a measuring conveyor, and improve the measuring accuracy.
摘要翻译：测量装置包括测量输送机中测量物品重量的计量输送机，进料输送机，排料输送机和沿输送方向延伸穿过测量输送机的中心输送机。在物品从进料输送机传送到测量输送机的第一传送区域中，以及物品从测量传送器传送到排出传送器的第二传送区域中，中心输送机的输送表面的高度部分位于与测量输送机的水平相同。在测量输送机所在的测量区域，中央输送机的输送表面的下部从测量输送机的下部向下移动。测量装置可以稳定地输送物品，抑制在传送到测量输送机的过程中的振动，并提高测量精度。

5. 发明授权

US4898440A Optical waveguide device 失效
标题翻译：光波导器件
公开(公告)号：US4898440A
公开(公告)日：1990-02-06
申请号：US244164
申请日：1988-09-14
申请人： Hitoshi Tamada , Masahiko Kaneko , Tsutomu Okamoto
发明人： Hitoshi Tamada , Masahiko Kaneko , Tsutomu Okamoto
IPC分类号： G02B6/34 , G02B6/12 , G02F1/095 , H01F10/24
CPC分类号： H01F10/245 , G02F1/095
摘要： An optical waveguide device is disclosed which utilizes an interaction between a guided optical wave and a magnetostatic wave. The optical waveguide device comprises a layer of bismuth substituted magnetic garnet which guides an optical wave. A pair of electrodes coupled to the layer of the magnetic garnet generates a magnetostatic backward volume wave in the layer of the magnetic garnet under an application of a certain bias magnetic field. The guided optical wave and the magnetostatic wave interact with each other wherein adverse effect caused by a spin effect is avoided to realize high efficiency at high frequency.
摘要翻译：公开了一种使用引导光波和静磁波之间的相互作用的光波导器件。光波导器件包括引导光波的铋取代的石榴石层。耦合到磁石榴石层的一对电极在施加一定偏置磁场的情况下在磁性石榴石层中产生静磁反向体积波。引导光波和静磁波彼此相互作用，避免了由自旋效应引起的不利影响，从而在高频下实现高效率。

6. 发明授权

US4212688A Alloy for magnetoresistive element and method of manufacturing the same 失效
标题翻译：磁阻元件用合金及其制造方法
公开(公告)号：US4212688A
公开(公告)日：1980-07-15
申请号：US956672
申请日：1978-11-01
申请人： Yoshimi Makino , Tsutomu Okamoto
发明人： Yoshimi Makino , Tsutomu Okamoto
IPC分类号： C22C1/00 , C22C19/00 , C23C14/14 , H01F41/14 , H01L43/02 , H01L43/10
CPC分类号： H01L43/10 , C22C19/00 , H01F1/068 , H01F41/14
摘要： An alloy for a magnetoresistive element has an ordered phase with superstructure and consists of nickel and cobalt atoms, and the ratio of the nickel atoms to the cobalt atoms by the number of atoms is substantially within the range of 40:60 to 60:40.A method of manufacturing an alloy for a magnetoresistive element includes the steps of preparing a substrate for a magnetoresistive element, and forming so a nickel-cobalt alloy film on the substrate at the temperature of more than 250.degree. C. that the alloy has an ordered phase with superstructure and the ratio of the nickel atoms to the cobalt atoms by the number of atoms is within the range of 40:60 to 60:40.
摘要翻译：用于磁阻元件的合金具有上层结构的有序相，由镍和钴原子组成，镍原子与钴原子的比例原子数大致在40:60至60:40的范围内。制造用于磁阻元件的合金的方法包括以下步骤：制备用于磁阻元件的衬底，并且在大于250℃的温度下在衬底上形成镍钴合金膜，使得合金具有有序相与上层结构，镍原子与钴原子的比例原子数在40:60〜60:40的范围内。

7. 发明申请

US20090314750A1 GAP CONTROL DEVICE AND LASER LAP WELDING METHOD 审中-公开
标题翻译： GAP控制装置和激光焊接方法
公开(公告)号：US20090314750A1
公开(公告)日：2009-12-24
申请号：US12489823
申请日：2009-06-23
申请人： Shigoki Saitoh , Naoki Ozawa , Tsutomu Okamoto
发明人： Shigoki Saitoh , Naoki Ozawa , Tsutomu Okamoto
IPC分类号： B23K26/20
CPC分类号： B23K26/14 , B23K26/0876 , B23K26/244 , B23K26/282 , B23K2101/12 , B23K2101/18 , B23K2103/05
摘要： A gap control device which is configured for use with a laser welding device adapted to weld objects to each other is provided. A laser guide is configured to guide a laser beam to a focusing position. A gap holder is configured to feed the objects in a feeding direction toward the focusing position and to form a predetermined gap between the objects at at least a part of the focusing position. A press is configured to press the object materials at a pressing position which is distant from the focusing position by a predetermined distance in the feeding direction.
摘要翻译：提供一种间隙控制装置，其被配置为与适于彼此焊接对象的激光焊接装置一起使用。激光引导件被配置为将激光束引导到聚焦位置。间隙保持器构造成沿着馈送方向朝向聚焦位置馈送物体，并且在聚焦位置的至少一部分处在物体之间形成预定的间隙。按压器构造成在远离聚焦位置的按压位置沿进给方向按压预定距离按压物体材料。

8. 发明授权

US5135746A Control of protozoal disease 失效
标题翻译：原发性疾病的控制
公开(公告)号：US5135746A
公开(公告)日：1992-08-04
申请号：US513945
申请日：1990-04-24
申请人： Toshimi Matsuno , Fumio Hariguchi , Tsutomu Okamoto
发明人： Toshimi Matsuno , Fumio Hariguchi , Tsutomu Okamoto
IPC分类号： C07H15/04 , A61K31/335 , A61K31/35 , A61K31/70 , A61K31/7028 , A61K31/715 , A61K36/00 , A61K36/185 , A61K36/45 , A61K36/54 , A61K45/06 , A61P33/02
CPC分类号： A61K36/185
摘要： A method for prophylaxis or treatment of protozoal disease which comprises administering to domestic animal a plant component having antiprotozoal activity in combination with an ionophore antibiotic is disclosed. The method is safe and economical, and gives the excellent effect to protozoal disease, so that it is useful for the poultry and the live-stock industry.

9. 发明授权

US4235663A Method of producing a dielectric of two-layer construction 失效
标题翻译：二层结构电介质的制作方法
公开(公告)号：US4235663A
公开(公告)日：1980-11-25
申请号：US856269
申请日：1977-12-01
申请人： Tsutomu Okamoto , Hidemasa Tamura
发明人： Tsutomu Okamoto , Hidemasa Tamura
IPC分类号： H05B33/22 , C30B19/00 , C30B19/02 , G02F1/00 , G02F1/03 , G02F1/05 , G09F9/30 , H01B3/00 , H01B3/12 , H03H3/00 , H05B33/12 , C30B19/04
CPC分类号： G02F1/0018 , C30B19/00 , C30B19/02 , C30B29/22
摘要： A thin (less than 500.mu.m) epitaxial dielectric layer having low photoconductivity is grown on a monocrystalline wafer composed of Bi.sub.12 GeO.sub.20 by a liquid-phase epitaxial growth technique. The composition of the liquid melt from which the dielectric layer is grown is composed of a pseudo-three-component system defined by the formula:(Bi.sub.2 O.sub.3).multidot.(GeO.sub.2).multidot.(Y+xGa.sub.2 O.sub.3)wherein Y is a component selected from the group consisting of CaO, MgO, BaO, SrO and mixtures thereof and x is a numeral ranging from 0.05 to 5.0. The pseudo-three-component system is so-selected that in a ternary diagram of the three individual components, the mol ratio of Bi.sub.2 O.sub.3 :GeO.sub.2 (Y+xGa.sub.2 O.sub.3) is surrounded by a range connecting points A, B and C on such ternary diagram wherein point A is 0.760:0.002:0.238; point B is 0.994:0.002:0.004; and point C is 0.760:0.236:0.004.
摘要翻译：通过液相外延生长技术在由Bi12GeO20组成的单晶晶片上生长具有低光电导率的薄（小于500μm）的外延电介质层。电介质层生长的液体熔体的组成由以下公式所定义的假三组分系统组成：（Bi 2 O 3）x（GeO 2）x（Y + x Ga 2 O 3），其中Y是选自由CaO，MgO，BaO，SrO及其混合物组成，x为0.05至5.0的数字。假三组分系统被选择为在三个单独组分的三元图中，Bi 3 O 3 :GeO 2（Y + xGa 2 O 3）的摩尔比被这样的三元图连接点A，B和C的范围包围其中点A为0.760：0.002：0.238; B点为0.994：0.002：0.004; 点C为0.760：0.236：0.004。

10. 发明申请

US20100029467A1 Multiple zeolite catalyst 审中-公开
标题翻译：多重沸石催化剂
公开(公告)号：US20100029467A1
公开(公告)日：2010-02-04
申请号：US12219927
申请日：2008-07-30
申请人： Tomoyuki Inui , Masayuki Inui , Mohammad A. Ali , Muhammad A. Al-Saleh , Syed A. Ali , Khalid Al-Nawad , Tsutomu Okamoto , Katsuhiko Ishikawa , Minoru Hatayama
发明人： Tomoyuki Inui , Masayuki Inui , Mohammad A. Ali , Muhammad A. Al-Saleh , Syed A. Ali , Khalid Al-Nawad , Tsutomu Okamoto , Katsuhiko Ishikawa , Minoru Hatayama
IPC分类号： B01J29/46 , B01J29/072 , B01J29/48 , B01J29/26 , B01J29/076 , B01J29/24 , B01J29/40
CPC分类号： B01J29/80 , B01J29/005 , B01J29/061 , B01J29/064 , B01J29/076 , B01J29/18 , B01J29/26 , B01J29/40 , B01J29/48 , B01J29/85 , B01J37/0009 , B01J2229/20 , B01J2229/42 , C07C6/126 , C07C2521/04 , C07C2523/24 , C07C2523/28 , C07C2523/40 , C07C2523/755 , C07C2529/18 , C07C2529/40 , C07C2529/84 , C07C2529/85 , Y02P20/52 , C07C15/08 , C07C15/06
摘要： The multiple zeolite catalyst is a catalytic composition used to convert C9+ alkylaromatic hydrocarbons to BTX, particularly commercially valuable xylenes. The catalyst is formed by mixing at least two zeolites selected from mordenite, beta zeolite, ZSM-5, ZSM-11, ZSM-12, ZSM-22, ZSM-23, MFI topology zeolite, NES topology zeolite, EU-1, MAPO-36, SAPO-5, SAPO-11, SAPO-34, and SAPO-41, and adding at least one metal component selected from Group VIB and Group VIII of the Periodic Table of the Elements. The two zeolites should have different physical and chemical characteristics, such as pore size and acidity. An exemplary catalyst includes mordenite, ZSM-5, and 3 wt. % molybdenum. The transalkylation reaction may be conducted in one or more reactors with a fixed bed, moving bed, or radial flow reactor at 200-540° C., a pressure of 1.0-5.0 MPa, and liquid hourly space velocity of 1.0-5.0 per hour.
摘要翻译：多重沸石催化剂是用于将C 9+烷基芳族烃转化成BTX的催化组合物，特别是商业上有价值的二甲苯。催化剂是通过混合至少两种选自丝光沸石，β沸石，ZSM-5，ZSM-11，ZSM-12，ZSM-22，ZSM-23，MFI拓扑沸石，NES拓扑沸石，EU-1，MAPO -36，SAPO-5，SAPO-11，SAPO-34和SAPO-41，并加入至少一种选自元素周期表的VIB族和VIII族的金属组分。两种沸石应具有不同的物理和化学特性，如孔径和酸度。示例性催化剂包括丝光沸石，ZSM-5和3wt。％钼。烷基转移反应可以在固定床，移动床或径向流动反应器的一个或多个反应器中在200-540℃，压力为1.0-5.0MPa，液时空速为1.0-5.0 /小时。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式