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1. 发明申请

US20110248182A1 ION IMPLANTING APPARATUS 有权
标题翻译：离子植入装置
公开(公告)号：US20110248182A1
公开(公告)日：2011-10-13
申请号：US13096280
申请日：2011-04-28
申请人： Tsutomu Nishihashi , Kazuhiro Watanabe , Tadashi Morita , Kenji Sato , Tsutomu Tanaka , Takuya Uzumaki
发明人： Tsutomu Nishihashi , Kazuhiro Watanabe , Tadashi Morita , Kenji Sato , Tsutomu Tanaka , Takuya Uzumaki
IPC分类号： G21K5/08
CPC分类号： G11B5/85 , H01J37/244 , H01J37/3171 , H01J2237/24585 , H01J2237/31703
摘要： An ion implanting apparatus is provided, which can accurately measure a quantity of atoms that are implanted. The ion implanting apparatus according to the present invention has an object to be measured, and the object to be measured is arranged in an irradiating range in which ions are irradiated. When atoms are implanted into an object to be processed by irradiating ions of a processing gas and neutralized particles thereof, the object to be measured is heated through the irradiation with the processing gas ions and the neutralized particles. A control unit determines a quantity of the atoms that are implanted into the object to be processed from the temperature of the object to be measured.
摘要翻译：提供离子注入装置，其可以精确地测量植入的原子的量。根据本发明的离子注入装置具有待测量的目的，并且被测量对象被布置在照射离子的照射范围内。当通过照射处理气体的离子和其中和颗粒将原子注入待处理物体时，通过用处理气体离子和中和的颗粒的照射来加热被测量物体。控制单元根据被测量物体的温度确定被植入物体的原子数量。

2. 发明申请

US20110242700A1 METHOD OF PRODUCING MAGNETIC STORAGE MEDIUM, MAGNETIC STORAGE MEDIUM AND INFORMATION STORAGE DEVICE 审中-公开
标题翻译：磁存储介质的生产方法，磁存储介质和信息存储设备
公开(公告)号：US20110242700A1
公开(公告)日：2011-10-06
申请号：US13131803
申请日：2009-12-22
申请人： Kenji Sato , Tsutomu Tanaka , Takuya Uzumaki , Tsutomu Nishihashi , Tadashi Morita , Kazuhiro Watanabe
发明人： Kenji Sato , Tsutomu Tanaka , Takuya Uzumaki , Tsutomu Nishihashi , Tadashi Morita , Kazuhiro Watanabe
IPC分类号： G11B5/64 , G11B21/02 , G21K5/00
CPC分类号： G11B5/855
摘要： The following abstract replace prior abstract in the application. It is an object to provide a simple and practical method capable of producing a magnetic storage medium of a type such as a bit-patterned type, a magnetic storage medium of the above-mentioned type and an information storage device which may be produced by such a simple and practical method, and in a method of producing a magnetic disk, there are performed: a film-forming process of forming, on a glass substrate 61, a magnetic film 62 so that the Curie temperature becomes 600 K or lower; and an ion injection process (C) of injecting ions locally into an area other than a predetermined protected area on the magnetic film 62.
摘要翻译：以下抽象代替应用程序中的以前的摘要。本发明的目的是提供一种能够制造诸如位图型的磁存储介质，上述类型的磁存储介质和可以通过这种方式制造的信息存储装置的简单实用的方法一种简单实用的方法，并且在制造磁盘的方法中，进行：在玻璃基板61上形成磁性膜62使得居里温度变为600K以下的成膜工序; 以及将离子局部注入磁性膜62上的预定保护区以外的区域的离子注入工序（C）。

3. 发明申请

US20110205663A1 METHOD OF PRODUCING MAGNETIC STORAGE MEDIUM, MAGNETIC STORAGE MEDIUM AND INFORMATION STORAGE DEVICE 审中-公开
标题翻译：磁存储介质的生产方法，磁存储介质和信息存储设备
公开(公告)号：US20110205663A1
公开(公告)日：2011-08-25
申请号：US13120974
申请日：2009-09-30
申请人： Kenji Sato , Tsutomu Tanaka , Takuya Uzumaki , Tsutomu Nishihashi , Tadashi Morita , Kazuhiro Watanabe
发明人： Kenji Sato , Tsutomu Tanaka , Takuya Uzumaki , Tsutomu Nishihashi , Tadashi Morita , Kazuhiro Watanabe
IPC分类号： G11B21/02 , B05D5/12 , G11B5/706
CPC分类号： G11B5/855
摘要： It is an object to produce a magnetic storage medium of a high recording density by a production method that does not impair mass productivity, and a magnetic storage medium 10 is produced by a production method including: a magnetic-film forming step of forming a magnetic film 61 on a substrate 62; and a dots separating step of reducing saturation magnetization by locally injecting mixed ions of N2+ ion and N+ ion into an area, of the substrate 62, other than plural areas which respectively become magnetic dots 62c where information is to be magnetically recorded, thereby forming, between the magnetic dots 62c, a between-dot separator 62d having saturation magnetization smaller than saturation magnetization of the magnetic dots 62c.
摘要翻译：本发明的目的是通过不损害批量生产率的制造方法制造高记录密度的磁存储介质，并且通过包括以下的制造方法制造磁性存储介质10：磁性成膜步骤，其形成磁性基板62上的膜61; 以及通过将N2 +离子和N +离子的混合离子局部注入基板62的区域中除了分别成为要磁记录的信息的磁点62c的多个区域以外的区域来降低饱和磁化的点分离步骤，在磁点62c之间，具有小于磁点62c的饱和磁化强度的饱和磁化强度的点间分离器62d。

4. 发明授权

US08791433B2 Ion implanting apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US08791433B2
公开(公告)日：2014-07-29
申请号：US13096280
申请日：2011-04-28
申请人： Tsutomu Nishihashi , Kazuhiro Watanabe , Tadashi Morita , Kenji Sato , Tsutomu Tanaka , Takuya Uzumaki
发明人： Tsutomu Nishihashi , Kazuhiro Watanabe , Tadashi Morita , Kenji Sato , Tsutomu Tanaka , Takuya Uzumaki
IPC分类号： G21G1/00
CPC分类号： G11B5/85 , H01J37/244 , H01J37/3171 , H01J2237/24585 , H01J2237/31703
摘要： An ion implanting apparatus is provided, which can accurately measure a quantity of atoms that are implanted. The ion implanting apparatus according to the present invention has an object to be measured, and the object to be measured is arranged in an irradiating range in which ions are irradiated. When atoms are implanted into an object to be processed by irradiating ions of a processing gas and neutralized particles thereof, the object to be measured is heated through the irradiation with the processing gas ions and the neutralized particles. A control unit determines a quantity of the atoms that are implanted into the object to be processed from the temperature of the object to be measured.
摘要翻译：提供离子注入装置，其可以精确地测量植入的原子的量。根据本发明的离子注入装置具有待测量的目的，并且被测量对象被布置在照射离子的照射范围内。当通过照射处理气体的离子和其中和颗粒将原子注入待处理物体时，通过用处理气体离子和中和的颗粒的照射来加热被测量物体。控制单元根据被测量物体的温度确定被植入物体的原子数量。

5. 发明申请

US20110194207A1 METHOD OF PRODUCING MAGNETIC STORAGE MEDIUM, MAGNETIC STORAGE MEDIUM AND INFORMATION STORAGE DEVICE 审中-公开
标题翻译：磁存储介质的生产方法，磁存储介质和信息存储设备
公开(公告)号：US20110194207A1
公开(公告)日：2011-08-11
申请号：US13123287
申请日：2009-11-18
申请人： Kenji Sato , Tsutomu Tanaka , Takuya Uzumaki , Tsutomu Nishihashi , Tadashi Morita , Kazuhiro Watanabe
发明人： Kenji Sato , Tsutomu Tanaka , Takuya Uzumaki , Tsutomu Nishihashi , Tadashi Morita , Kazuhiro Watanabe
IPC分类号： G11B21/02 , C23C14/14 , C23C14/04 , G11B5/66
CPC分类号： G11B5/855
摘要： It is an object to provide a simple method capable of producing a magnetic storage medium, a magnetic storage medium and an information storage device which may be produced by a simple production method with a high recording density, and a magnetic disk is produced by a production method having: a film-forming process of forming, on a substrate 61, a magnetic film made of a Co—Cr—Pt alloy and having a thickness of less than 10 nm; and an ion injection process of forming, by reducing saturation magnetization by locally injecting ions into a point other than plural points that become magnetic dots on each of which information is magnetically recorded, a between-dot separator having saturation magnetization smaller than saturation magnetization of the magnetic dots, between the magnetic dots.
摘要翻译：本发明的目的是提供一种能够制造可以通过具有高记录密度的简单制造方法制造的磁存储介质，磁存储介质和信息存储装置的简单方法，并且通过生产生产磁盘方法具有：在基板61上形成厚度小于10nm的由Co-Cr-Pt合金制成的磁膜的成膜工艺; 以及离子注入方法，通过将离子局部注入除磁性地记录有各自信息的磁点以外的点以外的点来降低饱和磁化，形成饱和磁化强度小于饱和磁化强度的饱和磁化强度的点间隔离体磁点之间，磁点之间。

6. 发明申请

US20110186225A1 MAGNETIC RECORDING MEDIUM MANUFACTURING DEVICE 审中-公开
标题翻译：磁记录介质制造设备
公开(公告)号：US20110186225A1
公开(公告)日：2011-08-04
申请号：US13055329
申请日：2009-07-21
申请人： Tsutomu Nishihashi , Tadashi Morita , Kazuhiro Watanabe , Kenji Sato , Takuya Uzumaki , Tsutomu Tanaka
发明人： Tsutomu Nishihashi , Tadashi Morita , Kazuhiro Watanabe , Kenji Sato , Takuya Uzumaki , Tsutomu Tanaka
IPC分类号： H01L21/3065
CPC分类号： G11B5/855
摘要： A magnetic recording medium is manufactured without the disappearance of the surface of a substrate that comprises a magnetic recording layer by ion milling and without being influenced by the atmosphere. A magnetic recording medium manufacturing device manufactures a magnetic recording medium by implanting an ion beam into a substrate that comprises a magnetic recording layer and removing by ashing the surface of the substrate that comprises the magnetic recording layer after the ion beam is implanted. The magnetic recording medium manufacturing device comprising an ion implantation chamber for implanting the ion beam into the substrate that comprises the magnetic recording layer coated with a resist film or a metal mask, and an ashing chamber for removing, by ashing, with plasma, the resist film or the metal mask of the substrate that comprises the magnetic recording layer coated with the resist film or the metal mask. The ion implantation chamber and the ashing chamber are coupled in a vacuum state. The magnetic recording medium manufactured device is provided with a substrate carrier for carrying the substrate into which the ion beam is implanted from the ion implantation chamber to the ashing chamber.
摘要翻译：通过离子研磨而不受大气的影响，制造磁记录介质，而不会消失包括磁记录层的基板的表面。磁记录介质制造装置通过将离子束注入到包含磁记录层的基板中，并且在离子束被植入之后通过灰化包括磁记录层的基板的表面去除而制造磁记录介质。该磁记录介质制造装置包括用于将离子束注入基片的离子注入室，所述离子注入室包括涂覆有抗蚀剂膜或金属掩模的磁记录层，以及灰化室，用灰浆除去等离子体，膜或包含涂覆有抗蚀剂膜或金属掩模的磁记录层的基板的金属掩模。离子注入室和灰化室在真空状态下耦合。磁记录介质制造装置设置有用于承载离子束从离子注入室注入至灰化室的基板的基板载体。

7. 发明申请

US20110122526A1 MANUFACTURING METHOD OF MAGNETIC RECORDING MEDIUM, MAGNETIC RECORDING MEDIUM, AND INFORMATION STORAGE DEVICE 审中-公开
标题翻译：磁记录介质，磁记录介质和信息存储设备的制造方法
公开(公告)号：US20110122526A1
公开(公告)日：2011-05-26
申请号：US13002738
申请日：2009-07-16
申请人： Kenji Sato , Tsutomu Tanaka , Tsutomu Nishihashi , Tadashi Morita , Kazuhiro Watanabe
发明人： Kenji Sato , Tsutomu Tanaka , Tsutomu Nishihashi , Tadashi Morita , Kazuhiro Watanabe
IPC分类号： G11B5/706 , G11B21/02 , B32B38/10
CPC分类号： G11B5/855 , B82Y25/00 , H01F1/009 , H01F10/3295
摘要： A manufacturing method of a magnetic recording medium includes: forming a magnetic film having an artificial lattice structure by laminating plural types of atomic layers alternately on a substrate; and separating dots, which forms a dot separation band by implanting an ion, to reduce saturation magnetization locally, into portions of the magnetic film other than plural portions of the magnetic film. Each of the plural portions is made into a magnetic dot in which information is to be magnetically recorded. The saturation magnetization of the dot separation band is smaller than that of the magnetic dot.
摘要翻译：磁记录介质的制造方法包括：通过在基板上交替层叠多种类型的原子层来形成具有人造晶格结构的磁性膜; 以及分离点，其通过注入离子形成点分离带，以局部地将饱和磁化降低到除磁性膜的多个部分之外的部分磁性膜。将多个部分中的每一个制成磁信号记录在磁点上。点分离带的饱和磁化强度小于磁点的饱和磁化强度。

8. 发明申请

US20050058913A1 Stencil mask, charged particle irradiation apparatus and the method 审中-公开
标题翻译：模板掩模，带电粒子照射装置及方法
公开(公告)号：US20050058913A1
公开(公告)日：2005-03-17
申请号：US10897696
申请日：2004-07-23
申请人： Tomoyuki Osada , Takeshi Shibata , Tsutomu Nishihashi
发明人： Tomoyuki Osada , Takeshi Shibata , Tsutomu Nishihashi
IPC分类号： H01L21/265 , G03F1/20 , G03F1/68 , G03F7/20 , H01J37/09 , H01J37/317 , H01L21/027 , G03F9/00 , G03C5/00 , G21K5/10 , H01J37/08
CPC分类号： H01J37/09 , B82Y10/00 , B82Y40/00 , G03F1/20 , H01J37/3175 , H01J2237/0453 , H01J2237/31711 , H01J2237/31788 , H01J2237/31794
摘要： A stencil mask capable of attaining long durability without any special processing thereon, wherein an inversion means for inverting the front and back of the stencil mask formed with an opening pattern penetrating in the thickness direction is provided, so that positions can be changed, that is, a surface irradiated with charged particles can be on the side of facing to a substrate subjected to processing, and a surface faced to the substrate can be on the side of receiving irradiation of charged particles, and the inversion means comprises a mask holder for electrostatically sticking with an outer circumferential part of the stencil mask and a rotation means for rotating the mask holder about an axis of a supporting portion.
摘要翻译：一种能够在没有特别处理的情况下实现长时间耐久性的模版掩模，其特征在于，设置用于使形成有沿厚度方向贯穿的开口图案形成的模版掩模的前后反转的反转装置，从而可以改变位置被照射带电粒子的表面可以在面对经受处理的基板的一侧，面向基板的表面可以在接收带电粒子的照射的一侧，并且反转装置包括用于静电的掩模支架粘附有模板掩模的外圆周部分和用于使掩模保持器围绕支撑部分的轴线旋转的旋转装置。

9. 发明授权

US08383496B2 Plasma doping method and manufacturing method of semiconductor device 有权
标题翻译：等离子体掺杂方法及半导体器件的制造方法
公开(公告)号：US08383496B2
公开(公告)日：2013-02-26
申请号：US13054825
申请日：2009-08-07
申请人： Kazuhiko Tonari , Tsutomu Nishihashi
发明人： Kazuhiko Tonari , Tsutomu Nishihashi
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/2236 , H01L29/6659 , H01L29/7833
摘要： A plasma doping method capable of introducing impurities into an object to be processed uniformly is supplied. Plasma of a diborane gas containing boron, which is a p-type impurity, and an argon gas, which is a rare gas, is generated, and no bias potential is applied to a silicon substrate. Thereby, the boron radicals in the plasma are deposited on the surface of the silicon substrate. After that, the supply of the diborane gas is stopped, and bias potential is applied to the silicon substrate. Thereby, the argon ions in the plasma are radiated onto the surface of the silicon substrate. The radiated argon ions collide with the boron radicals, and thereby boron radicals are introduced into the silicon substrate. The introduced boron radicals are activated by thermal processing, and thereby a p-type impurity diffusion layer is formed in the silicon substrate.
摘要翻译：提供能够均匀地将杂质引入被加工物的等离子体掺杂法。产生作为p型杂质的硼的乙硼烷气体的等离子体和作为稀有气体的氩气，并且不会对硅衬底施加偏置电位。由此，等离子体中的硼自由基沉积在硅衬底的表面上。之后，停止供给乙硼烷气体，向硅基板施加偏置电位。由此，将等离子体中的氩离子照射到硅基板的表面上。辐射的氩离子与硼自由基碰撞，从而将硼自由基引入到硅衬底中。引入的硼自由基通过热处理活化，从而在硅衬底中形成p型杂质扩散层。

10. 发明授权

US07511288B2 Ion implantation device 有权
标题翻译：离子注入装置
公开(公告)号：US07511288B2
公开(公告)日：2009-03-31
申请号：US11575197
申请日：2005-11-14
申请人： Seiji Ogata , Yuzo Sakurada , Masayuki Sekiguchi , Tsutomu Nishihashi
发明人： Seiji Ogata , Yuzo Sakurada , Masayuki Sekiguchi , Tsutomu Nishihashi
IPC分类号： H01J37/02
CPC分类号： H01L21/265 , H01J37/05 , H01J37/147 , H01J37/1474 , H01J37/3171 , H01J2237/057 , H01J2237/30483
摘要： To provide an ion implantation device which suppresses diffusion of an ion beam, can finely control a scanning waveform and can obtain a large scanning angle of about 10°.In the ion implantation device, first, second and third chambers 12A, 14A and 16A are arranged in predetermined places on a beam line, first and second gaps 20A and 22A intervene between the first chamber 12A and the second chamber 14A and between the second chamber 14A and the third chamber 16A, the second chamber 14A is electrically insulated from the first and third chambers 12A and 16A via first and second electrode pairs 26A and 28A attached to the first and second gaps 20A and 22A, respectively, the first and second electrode pairs 26A and 28A obliquely cross a standard axis J of the ion beam at a predetermined angle in opposite directions, and the second chamber 14 is connected to a scanning power source 40A which applies an electric potential having desired scanning waveform.
摘要翻译：为了提供抑制离子束扩散的离子注入装置，可以精细地控制扫描波形，并且可以获得大约10°的大扫描角度。在离子注入装置中，第一，第二和第三室12A，14A和16A布置在束线上的预定位置，第一和第二间隙20A和22A插入在第一室12A和第二室14A之间以及第二室 14A和第三室16A中，第二室14A经由分别连接到第一和第二间隙20A和22A的第一和第二电极对26A和28A与第一和第三室12A和16A电绝缘，第一和第二电极对26A和28A以相反方向以预定角度倾斜地跨越离子束的标准轴线J，并且第二腔室14连接到扫描电源40A，扫描电源40A施加具有期望的扫描波形的电位。

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