专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120228654A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120228654A1
公开(公告)日：2012-09-13
申请号：US13221326
申请日：2011-08-30
申请人： Akira FUJIMOTO , Ryota KITAGAWA , Kumi MASUNAGA , Kenji NAKAMURA , Tsutomu NAKANISHI , Koji Asakawa , Takanobu KAMAKURA , Shinji NUNOTANI
发明人： Akira FUJIMOTO , Ryota KITAGAWA , Kumi MASUNAGA , Kenji NAKAMURA , Tsutomu NAKANISHI , Koji Asakawa , Takanobu KAMAKURA , Shinji NUNOTANI
IPC分类号： H01L33/60
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/38 , H01L33/40 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。该器件还包括设置在该结构的第二半导体层侧上的电极层。电极层包括厚度不小于10纳米且不大于100纳米的金属部分。多个开口刺穿金属部分，每个开口具有不小于10纳米且不大于5微米的等效圆直径。所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜，所述无机膜相对于从所述发光层发射的光具有透射率。

2. 发明申请

US20130075778A1 LIGHT-TRANSMITTING METAL ELECTRODE, ELECTRONIC APPARATUS AND LIGHT EMITTING DEVICE 有权
标题翻译：光发射金属电极，电子装置和发光装置
公开(公告)号：US20130075778A1
公开(公告)日：2013-03-28
申请号：US13407291
申请日：2012-02-28
申请人： Tsutomu NAKANISHI , Akira FUJIMOTO , Ryota KITAGAWA , Kumi MASUNAGA , Kenji NAKAMURA , Koji ASAKAWA , Shinji NUNOTANI , Takanobu KAMAKURA
发明人： Tsutomu NAKANISHI , Akira FUJIMOTO , Ryota KITAGAWA , Kumi MASUNAGA , Kenji NAKAMURA , Koji ASAKAWA , Shinji NUNOTANI , Takanobu KAMAKURA
IPC分类号： H01L33/40 , H01B5/00 , B82Y99/00
CPC分类号： B82Y20/00 , B82Y40/00 , H01L33/42 , H01L51/5209
摘要： According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%.
摘要翻译：根据一个实施例，透光金属电极包括金属层。金属层设置在构件的主表面上，并且包括金属纳米线和由金属纳米线形成的多个开口。薄层包括沿着第一方向的多个第一直线部分和沿着与第一方向不同的方向的多个第二直线部分。沿着第一方向的第一线部分的最大长度和沿着与第一方向不同的方向的第二线部分的最大长度不大于可见光的波长。从表面的法线方向观察的金属层的面积与从法线方向观察的金属层的面积的比例为20％以上且80％以下。

3. 发明申请

US20120223348A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120223348A1
公开(公告)日：2012-09-06
申请号：US13221319
申请日：2011-08-30
申请人： Kumi MASUNAGA , Ryota KITAGAWA , Akira FUJIMOTO , Koji ASAKAWA , Takanobu KAMAKURA , Shinji NUNOTANI
发明人： Kumi MASUNAGA , Ryota KITAGAWA , Akira FUJIMOTO , Koji ASAKAWA , Takanobu KAMAKURA , Shinji NUNOTANI
IPC分类号： H01L33/60
CPC分类号： H01L33/405 , H01L33/38 , H01L2933/0016 , H01L2933/0083
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分沿着从第一半导体层到第二半导体层的方向。多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒金属部分。

4. 发明申请

US20130075771A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20130075771A1
公开(公告)日：2013-03-28
申请号：US13412044
申请日：2012-03-05
申请人： Akira FUJIMOTO , Tsutomu NAKANISHI , Ryota KITAGAWA , Kenji NAKAMURA , Shinji NUNOTANI , Takanobu KAMAKURA
发明人： Akira FUJIMOTO , Tsutomu NAKANISHI , Ryota KITAGAWA , Kenji NAKAMURA , Shinji NUNOTANI , Takanobu KAMAKURA
IPC分类号： H01L33/10
CPC分类号： H01L33/30 , H01L33/10 , H01L33/38
摘要： According to one embodiment, a semiconductor light emitting device includes first and second electrode layers, a and second semiconductor layers, a light emitting layer and a first intermediate layer. The first electrode layer has a metal portion having through-holes. The second electrode layer is stacked with the first electrode layer along a stacked direction, and light-reflective. The first semiconductor layer is provided between the first and second electrode layers, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light emitting layer is provided between the first and second semiconductor layers. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, transmissive to light emitted from the light emitting layer, and includes first contact portions and a first non-contact portion.
摘要翻译：根据一个实施例，半导体发光器件包括第一和第二电极层，第一和第二半导体层，发光层和第一中间层。第一电极层具有具有通孔的金属部分。第二电极层沿堆叠方向与第一电极层堆叠并且具有光反射性。第一半导体层设置在第一和第二电极层之间，并且具有第一导电类型。第二半导体层设置在第一半导体层和第二电极层之间，具有第二导电型。发光层设置在第一和第二半导体层之间。第一中间层设置在第二半导体层和第二电极层之间，对从发光层发射的光透射，并且包括第一接触部分和第一非接触部分。

5. 发明申请

US20120056222A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120056222A1
公开(公告)日：2012-03-08
申请号：US13037914
申请日：2011-03-01
申请人： Ryota KITAGAWA , Akira FUJIMOTO , Koji ASAKAWA , Eishi TSUTSUMI , Takanobu KAMAKURA , Shinji NUNOTANI , Masaaki OGAWA
发明人： Ryota KITAGAWA , Akira FUJIMOTO , Koji ASAKAWA , Eishi TSUTSUMI , Takanobu KAMAKURA , Shinji NUNOTANI , Masaaki OGAWA
IPC分类号： H01L33/58 , H01L33/38 , B82Y99/00 , B82Y40/00
CPC分类号： H01L33/38 , B82Y20/00 , H01L33/42 , H01L2933/0016 , H01L2933/0091
摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers.
摘要翻译：一种半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，发光层，第一电极层和第二电极层。发光层位于第一半导体层和第二半导体层之间。第一电极层位于与第一半导体层相对的第二半导体层的一侧。第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部。金属部分接触第二半导体层。沿着该方向观察的开口部分的构造的等效圆直径不小于10纳米且不大于5微米。

6. 发明申请

US20130240927A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20130240927A1
公开(公告)日：2013-09-19
申请号：US13616580
申请日：2012-09-14
申请人： Shinji NUNOTANI , Yasuhiko AKAIKE , Yoshinori NATSUME , Kazuyoshi FURUKAWA
发明人： Shinji NUNOTANI , Yasuhiko AKAIKE , Yoshinori NATSUME , Kazuyoshi FURUKAWA
IPC分类号： H01L33/44 , H01L33/60
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/405 , H01L33/60
摘要： According to one embodiment, a semiconductor light emitting element includes: a support substrate; a bonding layer provided on the support substrate; an LED layer provided on the bonding layer; and a buffer layer softer than the bonding layer. The buffer layer is placed in one of between the support substrate and the bonding layer and between the bonding layer and the LED layer.
摘要翻译：根据一个实施例，半导体发光元件包括：支撑基板; 设置在所述支撑基板上的接合层; 设置在所述接合层上的LED层; 和比结合层柔软的缓冲层。缓冲层被放置在支撑衬底和结合层之间以及结合层和LED层之间的一个中。

7. 发明申请

US20120305964A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20120305964A1
公开(公告)日：2012-12-06
申请号：US13421402
申请日：2012-03-15
申请人： Yasuhiko AKAIKE , Yoshinori NATSUME , Shinji NUNOTANI , Kazuyoshi FURUKAWA
发明人： Yasuhiko AKAIKE , Yoshinori NATSUME , Shinji NUNOTANI , Kazuyoshi FURUKAWA
IPC分类号： H01L33/38 , H01L33/46
CPC分类号： H01L33/0079 , H01L33/005 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2933/0016 , H01L2933/0025
摘要： According to one embodiment, a semiconductor light emitting element includes a light emitting element includes a semiconductor stacked body including a light emitting layer, a reflection layer, a support substrate, a first bonding electrode and a second bonding electrode. The reflection layer is made of a metal and has a first surface and a second surface opposite to the first surface. The semiconductor stacked body is provided on a side of the first surface of the reflection layer. The first bonding electrode is provided between the second surface and the support substrate and includes a convex portion projected toward the support substrate and a bottom portion provided around the convex portion in plan view. The second bonding electrode includes a concave portion fitted in the convex portion of the first bonding electrode and is capable of bonding the support substrate and the first bonding electrode.
摘要翻译：根据一个实施例，半导体发光元件包括发光元件，其包括包括发光层，反射层，支撑衬底，第一接合电极和第二接合电极的半导体层叠体。反射层由金属制成，具有与第一表面相对的第一表面和第二表面。半导体层叠体设置在反射层的第一表面的一侧。第一接合电极设置在第二表面和支撑基板之间，并且包括朝向支撑基板突出的凸部和在俯视图中设置在凸部周围的底部。第二接合电极包括嵌合在第一接合电极的凸部中并能够接合支撑基板和第一接合电极的凹部。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式