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1. 发明授权

US08597478B2 Method for manufacturing a sputtering target structure 有权
标题翻译：溅射靶结构体的制造方法
公开(公告)号：US08597478B2
公开(公告)日：2013-12-03
申请号：US13342465
申请日：2012-01-03
申请人： Tsutomu Kuniya , Nobuyuki Suzuki , Akira Terashi
发明人： Tsutomu Kuniya , Nobuyuki Suzuki , Akira Terashi
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , B22F7/062 , C22C47/08 , C22C49/06
摘要： To provide a sputtering target structure which has good machinability and thermal conductivity and has good wettability with soldering materials, which is inexpensive and can be used repeatedly for a long period of time, and which is free from problems of cracking and peeling of the sputtering target therein, a sputtering target structure is formed by bonding a sputtering target and a backing plate. The backing plate is formed of a material that has the difference in the linear expansion coefficient between it and the sputtering target material of at most 2×10−6/K, and a copper plate having a thickness of from 0.3 to 1.5 mm is disposed on at lest one face of the backing plate.
摘要翻译：为了提供一种溅射靶结构，其具有良好的机械加工性和导热性，并且与焊接材料具有良好的润湿性，这是便宜的并且可以重复使用长时间，并且没有溅射靶的龟裂和剥离的问题其中，通过结合溅射靶和背板形成溅射靶结构。背板由其与溅射靶材料之间的线膨胀系数差异至多为2×10-6 / K的材料形成，并且设置厚度为0.3至1.5mm的铜板在背板的一个面上。

2. 发明申请

US20090045050A1 SPUTTERING TARGET STRUCTURE 审中-公开
标题翻译：溅射目标结构
公开(公告)号：US20090045050A1
公开(公告)日：2009-02-19
申请号：US12159739
申请日：2006-12-27
申请人： Tsutomu Kuniya , Nobuyuki Suzuki , Akira Terashi
发明人： Tsutomu Kuniya , Nobuyuki Suzuki , Akira Terashi
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , B22F7/062 , C22C47/08 , C22C49/06
摘要： To provide a sputtering target structure which has good machinability and thermal conductivity and has good wettability with soldering materials, which is inexpensive and can be used repeatedly for a long period of time, and which is free from problems of cracking and peeling of the sputtering target therein, a sputtering target structure is formed by bonding a sputtering target and a backing plate. The backing plate is formed of a material that has the difference in the linear expansion coefficient between it and the sputtering target material of at most 2×10−6/K, and a copper plate having a thickness of from 0.3 to 1.5 mm is disposed on at lest one face of the backing plate.
摘要翻译：为了提供一种溅射靶结构，其具有良好的机械加工性和导热性，并且与焊接材料具有良好的润湿性，这是便宜的并且可以重复使用长时间，并且没有溅射靶的龟裂和剥离的问题其中，通过结合溅射靶和背板形成溅射靶结构。背板由其与溅射靶材料之间的线膨胀系数不同在2×10 -6 / K以下的材料形成，厚度为0.3〜1.5mm的铜板配置在防止背板的一个面。

3. 发明授权

US5236661A Chromium-based weld material 失效
标题翻译：铬基焊接材料
公开(公告)号：US5236661A
公开(公告)日：1993-08-17
申请号：US833501
申请日：1992-02-11
申请人： Hiroaki Hidaka , Tsutomu Kuniya , Koichi Hanawa , Tomoyuki Oikawa
发明人： Hiroaki Hidaka , Tsutomu Kuniya , Koichi Hanawa , Tomoyuki Oikawa
IPC分类号： B23K35/32 , C22C27/06
CPC分类号： C22C27/06 , B23K35/32
摘要： A chromium weld material comprising chromium as a main component and either one of or an appropriate combination of elements selected from the group IVb metals of the periodic table, Al, metals belonging to the groups VIIb, VIII, and Ib of the periodic table, Nb, and Ta and, if desired, at least one of rare earth elements, a chromium rolled article comprising chromium as a main component and either one of or an appropriate combination of elements selected from Al, Ti, Zr, Hf, Y, rare earth elements, and elements belonging to the groups Vb, VIb, and VIIb of the periodic table, and a process for producing said rolled article by cross-rolling under specific temperature and output rate conditions are disclosed. The weld material provides a weld free from deterioration of mechanical characteristics. The rolled article exhibits excellent tensile characteristics. The process provides a rolled sheet of small thickness without causing craking.
摘要翻译：包含铬作为主要成分的铬焊料，以及选自元素周期表第Ⅳb族金属，元素周期表第Ⅶb族，Ⅷ族和Ⅵb族金属中的任一种或元素的合适组合，Nb 和Ta，并且如果需要，至少一种稀土元素，包含铬作为主要成分的铬轧制品以及选自Al，Ti，Zr，Hf，Y，稀土中的元素之一或适当组合元素和元素，以及属于元素周期表Vb，VIb和VIIb族的元素，以及在特定温度和输出速率条件下通过交叉轧制生产所述轧制制品的方法。焊接材料提供了没有机械特性劣化的焊缝。轧制制品具有优异的拉伸特性。该方法提供厚度不大的轧制板，而不会造成破裂。

4. 发明授权

US5154796A Giant grains or single crystals of chromium and process for producing the same 失效
标题翻译：大颗粒或单晶的铬及其制造方法
公开(公告)号：US5154796A
公开(公告)日：1992-10-13
申请号：US689882
申请日：1991-05-24
申请人： Tsutomu Kuniya , Koichi Hanawa , Hiroshi Tanaka , Shinji Sekine
发明人： Tsutomu Kuniya , Koichi Hanawa , Hiroshi Tanaka , Shinji Sekine
IPC分类号： C22C1/04 , C22C27/06 , C30B1/02 , C30B13/00 , C30B29/02
CPC分类号： C30B1/02 , C22C1/045 , C22C27/06 , C30B13/00 , C30B29/02 , Y10S148/041
摘要： The present invention relates to giant grains or single crystals of chromium. Hitherto, since single crystals of chromium were generally obtained by a floating zone method, it was difficult to obtain an optionally shaped chromium single crystal. The present invention has been made in order to overcome these problems and provides a process for producing single crystals of chromium by secondary recrystallization. That is, it has been found that control of the amount of impurities present in a chromium component such as, for example, Co, Ti, Al, Si, and Ca, has a good influence on the formation of single crystals of chromium. For example, if chromium to which the above-described Ti, Al, Si, and Ca have been added in an amount of from 0.0002 wt % to 0.1 wt %, calculated as oxides thereof, or to which from 0.01 to 3 wt % of Co has further been added, is sintered and the resulting chromium molding is heated treated, single crystals of chromium having a complicated shape can be obtained.
摘要翻译： PCT No.PCT / JP90 / 01260 Sec。 371日期1991年5月24日 102（e）日期1991年5月24日PCT提交1990年9月28日PCT公布。出版物WO91 / 05070 日期：1991年04月18日。本发明涉及巨粒或单晶铬。迄今为止，由于通常通过浮法法获得单晶铬，所以难以获得任意形状的铬单晶。本发明是为了克服这些问题而提出的，并且提供了通过二次再结晶生产铬的单晶的方法。也就是说，已经发现，控制存在于诸如Co，Ti，Al，Si和Ca的铬组分中的杂质的量对铬的单晶的形成具有良好的影响。例如，如果加入上述Ti，Al，Si和Ca的铬，以其氧化物计算的0.0002重量％至0.1重量％，或其中的0.01-3重量％进一步添加Co，进行烧结，并对所得的铬成型体进行加热处理，可以得到具有复杂形状的铬的单晶。

5. 发明授权

US4917722A Single crystals of chromium and method for producing the same 失效
标题翻译：单晶铬及其制造方法
公开(公告)号：US4917722A
公开(公告)日：1990-04-17
申请号：US353415
申请日：1989-05-18
申请人： Tsutomu Kuniya , Koichi Hanawa , Tomoyuki Oikawa
发明人： Tsutomu Kuniya , Koichi Hanawa , Tomoyuki Oikawa
IPC分类号： C30B1/02
CPC分类号： C30B1/02 , C30B29/02 , C30B29/52
摘要： A method for producing a single crystal of chromium is disclosed, comprising sintering a chromium molding to thereby apply thereto a thermal strain and heat treating the resulting thermally strained chromium molding. The method achieves high efficiency of crystal growth and produces a single-crystal chromium molding of complicated shape.

6. 发明授权

US5126106A Chromium-based weld material and rolled article and process for producing the rolled article 失效
标题翻译：铬基焊接材料和轧制制品以及用于生产轧制制品的方法
公开(公告)号：US5126106A
公开(公告)日：1992-06-30
申请号：US526916
申请日：1990-05-22
申请人： Hiroaki Hidaka , Tsutomu Kuniya , Koichi Hanawa , Tomoyuki Oikawa
发明人： Hiroaki Hidaka , Tsutomu Kuniya , Koichi Hanawa , Tomoyuki Oikawa
IPC分类号： B23K35/32 , C22C27/06
CPC分类号： C22C27/06 , B23K35/32
摘要： A chromium weld material comprising chromium as a main component and either one of or an appropriate combination of elements selected from the group IVb metals of the periodic table, Al, metals belonging to the groups VIIb, VIII, and Ib of the periodic table, Nb, and Ta and, if desired, at least one of rare earth elements, a chromium rolled article comprising chromium as a main component and either one of or an appropriate combination of elements selected from Al, Ti, Zr, Hf, Y, rare earth elements, and elements belonging to the groups Vb, VIb, and VIIb of the periodic table, and a process for producing said rolled article by cross-rolling under specific temperature and output rate conditions are disclosed. The weld material provides a weld free from deterioration of mechanical characteristics. The rolled article exhibits excellent tensile characteristics. The process provides a rolled sheet of small thickness without causing craking.
摘要翻译：包含铬作为主要成分的铬焊料，以及选自元素周期表第Ⅳb族金属，元素周期表第Ⅶb族，Ⅷ族和Ⅶb族金属中的任一种或元素的合适组合，Nb 和Ta，并且如果需要，至少一种稀土元素，包含铬作为主要成分的铬轧制品和选自Al，Ti，Zr，Hf，Y，稀土中的元素之一或适当组合元素和元素，以及属于元素周期表Vb，VIb和VIIb族的元素，以及在特定温度和输出速率条件下通过交叉轧制生产所述轧制制品的方法。焊接材料提供了没有机械特性劣化的焊缝。轧制制品具有优异的拉伸特性。该方法提供厚度不大的轧制板，而不会造成破裂。

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