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1. 发明申请

US20090201625A1 CONDUCTIVE STRUCTURE HAVING CAPACITOR 有权
标题翻译：具有电容器的导电结构
公开(公告)号：US20090201625A1
公开(公告)日：2009-08-13
申请号：US12029472
申请日：2008-02-12
申请人： Tsuoe-Hsiang Liao , Huo-Tieh Lu , Chih-Chien Liu , Hsiang-Hung Peng , Yu-Fang Chien
发明人： Tsuoe-Hsiang Liao , Huo-Tieh Lu , Chih-Chien Liu , Hsiang-Hung Peng , Yu-Fang Chien
IPC分类号： H01G4/30
CPC分类号： H01L23/5223 , H01L28/87 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： A three-dimensional conductive structure has a first electrode and a second electrode of a capacitor structure, and thereby defines a capacitor space. At least a signal line is further included in the capacitor space where both the first electrode and the second electrode can cross and detour round the signal line. Therefore, the signal line can go directly through the capacitor space for transferring various signals without making a detour to avoid the whole capacitor structure.
摘要翻译：三维导电结构具有电容器结构的第一电极和第二电极，从而限定电容器空间。至少一个信号线还包括在电容器空间中，其中第一电极和第二电极都可以跨越信号线并绕道。因此，信号线可以直接通过电容器空间传输各种信号，而不会绕行，以避免整个电容器结构。

2. 发明授权

US07872852B2 Conductive structure having capacitor 有权
标题翻译：具有电容器的导电结构
公开(公告)号：US07872852B2
公开(公告)日：2011-01-18
申请号：US12029472
申请日：2008-02-12
申请人： Tsuoe-Hsiang Liao , Huo-Tieh Lu , Chih-Chien Liu , Hsiang-Hung Peng , Yu-Fang Chien
发明人： Tsuoe-Hsiang Liao , Huo-Tieh Lu , Chih-Chien Liu , Hsiang-Hung Peng , Yu-Fang Chien
IPC分类号： H01G4/005 , H01G4/06
CPC分类号： H01L23/5223 , H01L28/87 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： A three-dimensional conductive structure has a first electrode and a second electrode of a capacitor structure, and thereby defines a capacitor space. At least a signal line is further included in the capacitor space where both the first electrode and the second electrode can cross and detour round the signal line. Therefore, the signal line can go directly through the capacitor space for transferring various signals without making a detour to avoid the whole capacitor structure.
摘要翻译：三维导电结构具有电容器结构的第一电极和第二电极，从而限定电容器空间。至少一个信号线还包括在电容器空间中，其中第一电极和第二电极都可以跨越信号线并绕道。因此，信号线可以直接通过电容器空间传输各种信号，而不会绕行，以避免整个电容器结构。

3. 发明申请

US20090225490A1 CAPACITOR STRUCTURE 审中-公开
标题翻译：电容结构
公开(公告)号：US20090225490A1
公开(公告)日：2009-09-10
申请号：US12043135
申请日：2008-03-06
申请人： Tsuoe-Hsiang Liao , Huo-Tieh Lu , Yu-Fang Chien , Chih-Chien Liu , Pei-Lin Kuo , Yu-Ru Yang
发明人： Tsuoe-Hsiang Liao , Huo-Tieh Lu , Yu-Fang Chien , Chih-Chien Liu , Pei-Lin Kuo , Yu-Ru Yang
IPC分类号： H01G4/005 , H01G4/00
CPC分类号： H01G4/232 , H01G4/012 , H01G4/30 , H01G4/33 , H01L23/5222 , H01L27/0207 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： A capacitor structure has a first electrode and a second electrode, which does not electrically connect to the first electrode. The first electrode has a plurality of first meshed conductive structures. The first meshed conductive structures have the same layout pattern, and are electrically connected to each other. The second electrode has a plurality of second meshed conductive structures. The second meshed conductive structures have the same layout pattern, and are electrically connected to each other. The first meshed conductive structures and the second meshed conductive structures are alternately stacked.
摘要翻译：电容器结构具有不与第一电极电连接的第一电极和第二电极。第一电极具有多个第一网状导电结构。第一网状导电结构具有相同的布局图案，并且彼此电连接。第二电极具有多个第二网状导电结构。第二网状导电结构具有相同的布局图案，并且彼此电连接。第一网状导电结构和第二网状导电结构交替堆叠。

4. 发明申请

US20090107527A1 METHOD OF CLEANING TRANSPARENT DEVICE IN A THERMAL PROCESS APPARATUS, THERMAL PROCESS APPARATUS AND PROCESS USING THE SAME THERMAL PROCESS APPARATUS 审中-公开
标题翻译：在热过程装置中清洁透明装置的方法，使用相同热处理装置的热处理装置和方法
公开(公告)号：US20090107527A1
公开(公告)日：2009-04-30
申请号：US11931757
申请日：2007-10-31
申请人： Yu-Yung Wang , Shin-Long Wu , Chao-Hu Liang , Sheng-Yao Lin , Hui-Shen Shih , Yu-Fang Chien
发明人： Yu-Yung Wang , Shin-Long Wu , Chao-Hu Liang , Sheng-Yao Lin , Hui-Shen Shih , Yu-Fang Chien
IPC分类号： B08B5/00 , B08B13/00 , B08B7/00
CPC分类号： B08B7/00 , B08B7/0035 , H01L21/67028
摘要： A method of cleaning a transparent device in a thermal process apparatus, wherein the transparent device is disposed in a chamber of a thermal process apparatus, and the transparent device includes a wafer holder for carry a wafer disposed under the transparent device, and an energy source output device disposed above the transparent device in the chamber, is provided. The method of the present invention includes performing a surface treatment step to clean a surface of the transparent device.
摘要翻译：一种在热处理装置中清洁透明装置的方法，其中所述透明装置设置在热处理装置的室中，并且所述透明装置包括用于承载设置在所述透明装置下方的晶片的晶片保持器，以及能量源设置在室内的透明装置上方的输出装置。本发明的方法包括进行表面处理步骤以清洁透明装置的表面。

5. 发明申请

US20110186945A1 MEMS DIAPHRAGM 有权
标题翻译： MEMS膜片
公开(公告)号：US20110186945A1
公开(公告)日：2011-08-04
申请号：US13072368
申请日：2011-03-25
申请人： HUI-SHEN SHIH , Yu-Fang Chien
发明人： HUI-SHEN SHIH , Yu-Fang Chien
IPC分类号： H01L29/84
CPC分类号： B81C1/00587 , B81B2201/0257 , B81B2203/0127
摘要： A microelectromechanical system (MEMS) diaphragm is provided. The MEMS diaphragm includes a first conductive layer, a second conductive layer and a first dielectric layer. The first conductive layer is disposed on a substrate and having a plurality of openings. The openings have the same dimension, and the distance between the adjacent openings is gradually increased toward the edge of the first conductive layer. The second conductive layer is disposed between the first conductive layer and the substrate. The first dielectric layer is partially disposed between the first conductive layer and the second conductive layer, so that a portion of the first conductive layer is suspended.
摘要翻译：提供了微机电系统（MEMS）隔膜。 MEMS隔膜包括第一导电层，第二导电层和第一介电层。第一导电层设置在基板上并且具有多个开口。开口具有相同的尺寸，并且相邻开口之间的距离朝向第一导电层的边缘逐渐增加。第二导电层设置在第一导电层和衬底之间。第一介电层部分地设置在第一导电层和第二导电层之间，使得第一导电层的一部分被悬挂。

6. 发明申请

US20090123877A1 METHOD FOR FORMING AN OPENING OF NANO-METER SCALE 审中-公开
标题翻译：形成纳米尺度开放的方法
公开(公告)号：US20090123877A1
公开(公告)日：2009-05-14
申请号：US11940305
申请日：2007-11-14
申请人： Hui-Shen Shih , Yu-Fang Chien
发明人： Hui-Shen Shih , Yu-Fang Chien
IPC分类号： B28B11/08 , G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L21/76817
摘要： A method for forming an opening of nano-meter scale includes providing a substrate with a material layer, and later forming a first part of the opening and then forming a second part of the opening in the material layer. At least one of the first part and the second part of the opening is formed by imprint.
摘要翻译：用于形成纳米尺度开口的方法包括：向衬底提供材料层，然后形成开口的第一部分，然后在材料层中形成开口的第二部分。开口的第一部分和第二部分中的至少一个由印记形成。

7. 发明授权

US08492857B2 MEMS diaphragm 有权
标题翻译： MEMS隔膜
公开(公告)号：US08492857B2
公开(公告)日：2013-07-23
申请号：US13072368
申请日：2011-03-25
申请人： Hui-Shen Shih , Yu-Fang Chien
发明人： Hui-Shen Shih , Yu-Fang Chien
IPC分类号： H01L29/06
CPC分类号： B81C1/00587 , B81B2201/0257 , B81B2203/0127
摘要： A microelectromechanical system (MEMS) diaphragm is provided. The MEMS diaphragm includes a first conductive layer, a second conductive layer and a first dielectric layer. The first conductive layer is disposed on a substrate and having a plurality of openings. The openings have the same dimension, and the distance between the adjacent openings is gradually increased toward the edge of the first conductive layer. The second conductive layer is disposed between the first conductive layer and the substrate. The first dielectric layer is partially disposed between the first conductive layer and the second conductive layer, so that a portion of the first conductive layer is suspended.
摘要翻译：提供了微机电系统（MEMS）隔膜。 MEMS隔膜包括第一导电层，第二导电层和第一介电层。第一导电层设置在基板上并且具有多个开口。开口具有相同的尺寸，并且相邻开口之间的距离朝向第一导电层的边缘逐渐增加。第二导电层设置在第一导电层和衬底之间。第一介电层部分地设置在第一导电层和第二导电层之间，使得第一导电层的一部分被悬挂。

8. 发明授权

US08134215B2 MEMS diaphragm 有权
标题翻译： MEMS隔膜
公开(公告)号：US08134215B2
公开(公告)日：2012-03-13
申请号：US12248631
申请日：2008-10-09
申请人： Hui-Shen Shih , Yu-Fang Chien
发明人： Hui-Shen Shih , Yu-Fang Chien
IPC分类号： H01L29/06
CPC分类号： B81C1/00587 , B81B2201/0257 , B81B2203/0127
摘要： A microelectromechanical system (MEMS) diaphragm is provided. The MEMS diaphragm includes a first conductive layer, a second conductive layer and a dielectric layer. The first conductive layer is disposed on a substrate and having a plurality of openings. The dimenisons of the openings are gradually reduced toward the edge of the first conductive layer. The second conductive layer is disposed between the first conductive layer and the substrate. The dielectric layer is partially disposed between the first conductive layer and the second conductive layer, so that a portion of the first conductive layer is suspended.
摘要翻译：提供了微机电系统（MEMS）隔膜。 MEMS隔膜包括第一导电层，第二导电层和介电层。第一导电层设置在基板上并且具有多个开口。开口的尺寸朝向第一导电层的边缘逐渐减小。第二导电层设置在第一导电层和衬底之间。电介质层部分地设置在第一导电层和第二导电层之间，使得第一导电层的一部分被悬挂。

9. 发明授权

US07967960B2 Fluid-confining apparatus 失效
标题翻译：流体封闭装置
公开(公告)号：US07967960B2
公开(公告)日：2011-06-28
申请号：US11935416
申请日：2007-11-06
申请人： Hui-Shen Shih , Yu-Fang Chien
发明人： Hui-Shen Shih , Yu-Fang Chien
IPC分类号： C25D17/00
CPC分类号： H01L21/67184 , C25D5/08 , C25D17/001 , C25D17/004 , C25D17/06 , H01L21/67005 , H01L21/67051 , H01L21/6723 , H01L21/68764 , H01L21/68771
摘要： The fluid-confining apparatus includes at least a substrate holder, at least a confining fluid supplying tube, at least a confining fluid recovering tube, at least a process fluid supplying tube, and at least a process fluid recovering tube. The process fluid supplying tube supplies at least a process fluid, and makes the process fluid contact with at least a treatment region of a wafer. The confining fluid supplying tube continuity supplies at least a confining fluid. The confining fluid does not dissolve the process fluid. The flowing confining fluid can contact with at least a non-treatment region of the wafer, and confines the process fluid into a predetermined space.
摘要翻译：流体封闭装置至少包括衬底保持器，至少限制流体供应管，至少限制流体回收管，至少一个工艺流体供应管和至少一个工艺流体回收管。工艺流体供给管至少提供处理流体，并且使处理流体与晶片的至少一个处理区域接触。约束流体供应管连续性供应至少一个约束流体。限制流体不会溶解工艺流体。流动的限制流体可以与晶片的至少一个非处理区域接触，并将工艺流体限制在预定的空间中。

10. 发明授权

US07957827B2 Method of controlling statuses of wafers 有权
标题翻译：控制晶片状态的方法
公开(公告)号：US07957827B2
公开(公告)日：2011-06-07
申请号：US11965565
申请日：2007-12-27
申请人： Hui-Shen Shih , Yu-Fang Chien
发明人： Hui-Shen Shih , Yu-Fang Chien
IPC分类号： H01L21/00 , G01B5/02 , G01B3/22 , G01B5/20 , G01D1/00 , G06F15/00 , G06F19/00
CPC分类号： H01L22/20 , G05B2219/37224 , G05B2219/45031 , H01L22/12
摘要： A method of controlling statuses of a plurality of wafers is described. A status of a wafer among the wafers is determined. An action related to the status is taken, according to the status determined, to the wafer and/or other wafers to improve a yield or yields thereof.
摘要翻译：描述了一种控制多个晶片的状态的方法。确定晶片中的晶片的状态。根据所确定的状态，将与状态相关的动作作用于晶片和/或其他晶片以提高其产量或产量。

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