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1. 发明授权

US09484437B2 Lateral double diffused metal oxide semiconductor device and manufacturing method thereof 有权
标题翻译：横向双扩散金属氧化物半导体器件及其制造方法
公开(公告)号：US09484437B2
公开(公告)日：2016-11-01
申请号：US15018672
申请日：2016-02-08
申请人： Tsung-Yi Huang , Ching-Yao Yang , Wen-Yi Liao , Hung-Der Su , Kuo-Cheng Chang
发明人： Tsung-Yi Huang , Ching-Yao Yang , Wen-Yi Liao , Hung-Der Su , Kuo-Cheng Chang
IPC分类号： H01L29/78 , H01L29/66 , H01L29/06 , H01L21/762 , H01L29/08 , H01L29/10
CPC分类号： H01L29/66681 , H01L21/76202 , H01L21/76224 , H01L21/76229 , H01L29/0649 , H01L29/0852 , H01L29/1095 , H01L29/6681 , H01L29/7816
摘要： The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.
摘要翻译：本发明公开了一种横向双扩散金属氧化物半导体（LDMOS）器件及其制造方法。 LDMOS器件包括：漂移区，隔离氧化区，第一氧化物区，第二氧化物区，栅极，体区，源极和漏极。隔离氧化物区域，第一氧化物区域和第二氧化物区域分别具有隔离厚度，第一厚度和第二厚度，其中第二厚度小于第一厚度。本发明可以降低导通电阻而不降低第一氧化区和第二氧化区的LDMOS器件的击穿电压。

2. 发明授权

US09287394B2 Lateral double diffused metal oxide semiconductor device and manufacturing method thereof 有权
公开(公告)号：US09287394B2
公开(公告)日：2016-03-15
申请号：US14510600
申请日：2014-10-09
申请人： Tsung-Yi Huang , Ching-Yao Yang , Wen-Yi Liao , Hung-Der Su , Kuo-Cheng Chang
发明人： Tsung-Yi Huang , Ching-Yao Yang , Wen-Yi Liao , Hung-Der Su , Kuo-Cheng Chang
IPC分类号： H01L29/78 , H01L29/06 , H01L29/66 , H01L21/762
CPC分类号： H01L29/66681 , H01L21/76202 , H01L21/76224 , H01L21/76229 , H01L29/0649 , H01L29/0852 , H01L29/1095 , H01L29/6681 , H01L29/7816
摘要： The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.

3. 发明申请

US20150137232A1 LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：横向双向扩散金属氧化物半导体器件及其制造方法
公开(公告)号：US20150137232A1
公开(公告)日：2015-05-21
申请号：US14510600
申请日：2014-10-09
申请人： Tsung-Yi Huang , Ching-Yao Yang , Wen-Yi Liao , Hung-Der Su , Kuo-Cheng Chang
发明人： Tsung-Yi Huang , Ching-Yao Yang , Wen-Yi Liao , Hung-Der Su , Kuo-Cheng Chang
IPC分类号： H01L29/78 , H01L29/66 , H01L21/762 , H01L29/06
CPC分类号： H01L29/66681 , H01L21/76202 , H01L21/76224 , H01L21/76229 , H01L29/0649 , H01L29/0852 , H01L29/1095 , H01L29/6681 , H01L29/7816
摘要： The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.
摘要翻译：本发明公开了一种横向双扩散金属氧化物半导体（LDMOS）器件及其制造方法。 LDMOS器件包括：漂移区，隔离氧化区，第一氧化物区，第二氧化物区，栅极，体区，源极和漏极。隔离氧化物区域，第一氧化物区域和第二氧化物区域分别具有隔离厚度，第一厚度和第二厚度，其中第二厚度小于第一厚度。本发明可以降低导通电阻而不降低第一氧化区和第二氧化区的LDMOS器件的击穿电压。

4. 发明申请

US20160155820A1 LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20160155820A1
公开(公告)日：2016-06-02
申请号：US15018672
申请日：2016-02-08
申请人： Tsung-Yi Huang , Ching-Yao Yang , Wen-Yi Liao , Hung-Der Su , Kuo-Cheng Chang
发明人： Tsung-Yi Huang , Ching-Yao Yang , Wen-Yi Liao , Hung-Der Su , Kuo-Cheng Chang
IPC分类号： H01L29/66 , H01L21/762 , H01L29/06 , H01L29/10 , H01L29/08
CPC分类号： H01L29/66681 , H01L21/76202 , H01L21/76224 , H01L21/76229 , H01L29/0649 , H01L29/0852 , H01L29/1095 , H01L29/6681 , H01L29/7816
摘要： The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.

5. 发明授权

US08729630B1 Double diffused metal oxide semiconductor device and manufacturing method thereof 有权
公开(公告)号：US08729630B1
公开(公告)日：2014-05-20
申请号：US14146512
申请日：2014-01-02
申请人： Ching-Yao Yang , Tsung-Yi Huang , Huan-Ping Chu , Hung-Der Su
发明人： Ching-Yao Yang , Tsung-Yi Huang , Huan-Ping Chu , Hung-Der Su
IPC分类号： H01L29/66
CPC分类号： H01L29/4238 , H01L21/28114 , H01L21/823425 , H01L29/0692 , H01L29/0696 , H01L29/0847 , H01L29/086 , H01L29/0865 , H01L29/42368 , H01L29/66659 , H01L29/66681 , H01L29/66689 , H01L29/7816 , H01L29/7835
摘要： The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: an isolation structure for defining device regions; a gate with a ring-shaped structure; a drain located outside the ring; and a lightly doped drain, a source, and a body electrode located inside the ring. To increase the sub-threshold voltage at the corners of the gate, the corners are located completely on the isolation structure, or the lightly doped drain is apart from the corners by a predetermined distance.

6. 发明申请

US20120187483A1 Double diffused metal oxide semiconductor device and manufacturing method thereof 有权
标题翻译：双扩散金属氧化物半导体器件及其制造方法
公开(公告)号：US20120187483A1
公开(公告)日：2012-07-26
申请号：US13066622
申请日：2011-04-20
申请人： Ching-Yao Yang , Tsung-Yi Huang , Huan-Ping Chu , Hung-Der Su
发明人： Ching-Yao Yang , Tsung-Yi Huang , Huan-Ping Chu , Hung-Der Su
IPC分类号： H01L29/78 , H01L21/8232 , H01L21/336
CPC分类号： H01L29/4238 , H01L21/28114 , H01L21/823425 , H01L29/0692 , H01L29/0696 , H01L29/0847 , H01L29/086 , H01L29/0865 , H01L29/42368 , H01L29/66659 , H01L29/66681 , H01L29/66689 , H01L29/7816 , H01L29/7835
摘要： The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: an isolation structure for defining device regions; a gate with a ring-shaped structure; a drain located outside the ring; and a lightly doped drain, a source, and a body electrode located inside the ring. To increase the sub-threshold voltage at the corners of the gate, the corners are located completely on the isolation structure, or the lightly doped drain is apart from the corners by a predetermined distance.
摘要翻译：本发明公开了一种双扩散金属氧化物半导体（DMOS）器件及其制造方法。 DMOS设备包括：用于定义设备区域的隔离结构; 具有环形结构的门; 位于环外的排水沟; 以及位于环内的轻掺杂漏极，源极和体电极。为了增加栅极角落处的次阈值电压，角部完全位于隔离结构上，或者轻掺杂漏极与角分开预定距离。

7. 发明申请

US20130307070A1 Double Diffused Drain Metal Oxide Semiconductor Device and Manufacturing Method Thereof 有权
标题翻译：双扩散漏极金属氧化物半导体器件及其制造方法
公开(公告)号：US20130307070A1
公开(公告)日：2013-11-21
申请号：US13472344
申请日：2012-05-15
申请人： Tsung-Yi Huang , Ching-Yao Yang , Wen-Yi Liao
发明人： Tsung-Yi Huang , Ching-Yao Yang , Wen-Yi Liao
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7835 , H01L29/0692 , H01L29/402 , H01L29/66659
摘要： The present invention discloses a double diffused drain metal oxide semiconductor (DDMOS) device and a manufacturing method thereof. The DDDMOS device is formed in a substrate, and includes: a drift region, a gate, a source, a drain, a dielectric layer, and a conductive layer. The drift region includes a first region and a second region. The gate is formed on the substrate, and overlaps the first region from top view. The source and drain are formed at both sides of the gate respectively, and the drain is located in the second region. The drain and the gate are separated by a portion of the second region from top view. The dielectric layer is formed by dielectric material on the gate and the second region. The conductive layer is formed by conductive material on the dielectric layer, and overlaps at least part of the second region from top view.
摘要翻译：本发明公开了一种双扩散漏极金属氧化物半导体（DDMOS）器件及其制造方法。 DDDMOS器件形成在衬底中，并且包括：漂移区，栅极，源极，漏极，电介质层和导电层。漂移区域包括第一区域和第二区域。栅极形成在衬底上，并且从顶视图与第一区域重叠。源极和漏极分别形成在栅极的两侧，漏极位于第二区域中。漏极和栅极由顶视图的第二区域的一部分分开。电介质层由栅极和第二区域上的电介质材料形成。导电层由电介质层上的导电材料形成，并从顶视图与第二区域的至少一部分重叠。

8. 发明授权

US08759913B2 Double diffused drain metal oxide semiconductor device and manufacturing method thereof 有权
标题翻译：双扩散漏极金属氧化物半导体器件及其制造方法
公开(公告)号：US08759913B2
公开(公告)日：2014-06-24
申请号：US13472344
申请日：2012-05-15
申请人： Tsung-Yi Huang , Ching-Yao Yang , Wen-Yi Liao
发明人： Tsung-Yi Huang , Ching-Yao Yang , Wen-Yi Liao
IPC分类号： H01L29/66
CPC分类号： H01L29/7835 , H01L29/0692 , H01L29/402 , H01L29/66659
摘要： The present invention discloses a double diffused drain metal oxide semiconductor (DDMOS) device and a manufacturing method thereof. The DDDMOS device is formed in a substrate, and includes: a drift region, a gate, a source, a drain, a dielectric layer, and a conductive layer. The drift region includes a first region and a second region. The gate is formed on the substrate, and overlaps the first region from top view. The source and drain are formed at both sides of the gate respectively, and the drain is located in the second region. The drain and the gate are separated by a portion of the second region from top view. The dielectric layer is formed by dielectric material on the gate and the second region. The conductive layer is formed by conductive material on the dielectric layer, and overlaps at least part of the second region from top view.
摘要翻译：本发明公开了一种双扩散漏极金属氧化物半导体（DDMOS）器件及其制造方法。 DDDMOS器件形成在衬底中，并且包括：漂移区，栅极，源极，漏极，电介质层和导电层。漂移区域包括第一区域和第二区域。栅极形成在衬底上，并且从顶视图与第一区域重叠。源极和漏极分别形成在栅极的两侧，漏极位于第二区域中。漏极和栅极由顶视图的第二区域的一部分分开。电介质层由栅极和第二区域上的电介质材料形成。导电层由电介质层上的导电材料形成，并从顶视图与第二区域的至少一部分重叠。

9. 发明授权

US08841723B2 LDMOS device having increased punch-through voltage and method for making same 有权
标题翻译：具有增加穿通电压的LDMOS器件及其制造方法
公开(公告)号：US08841723B2
公开(公告)日：2014-09-23
申请号：US12720834
申请日：2010-03-10
申请人： Tsung-Yi Huang , Huan-Ping Chu , Ching-Yao Yang , Hung-Der Su
发明人： Tsung-Yi Huang , Huan-Ping Chu , Ching-Yao Yang , Hung-Der Su
IPC分类号： H01L29/66 , H01L29/08 , H01L29/78
CPC分类号： H01L29/7816 , H01L29/0878 , H01L29/66681
摘要： The present invention discloses an LDMOS device having an increased punch-through voltage and a method for making same. The LDMOS device includes: a substrate; a well of a first conductive type formed in the substrate; an isolation region formed in the substrate; a body region of a second conductive type in the well; a source in the body region; a drain in the well; a gate structure on the substrate; and a first conductive type dopant region beneath the body region, for increasing a punch-through voltage.
摘要翻译：本发明公开了一种具有增加的穿通电压的LDMOS器件及其制造方法。 LDMOS器件包括：衬底; 在基板中形成的第一导电类型的阱; 形成在衬底中的隔离区; 井中的第二导电类型的体区; 身体的一个来源; 井中排水基板上的栅极结构; 以及在身体区域下面的第一导电型掺杂区域，用于增加穿通电压。

10. 发明申请

US20140117443A1 DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20140117443A1
公开(公告)日：2014-05-01
申请号：US14146512
申请日：2014-01-02
申请人： Ching-Yao Yang , Tsung-Yi Huang , Huan-Ping Chu , Hung-Der Su
发明人： Ching-Yao Yang , Tsung-Yi Huang , Huan-Ping Chu , Hung-Der Su
IPC分类号： H01L29/423 , H01L29/66 , H01L21/28 , H01L29/78
CPC分类号： H01L29/4238 , H01L21/28114 , H01L21/823425 , H01L29/0692 , H01L29/0696 , H01L29/0847 , H01L29/086 , H01L29/0865 , H01L29/42368 , H01L29/66659 , H01L29/66681 , H01L29/66689 , H01L29/7816 , H01L29/7835
摘要： The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: an isolation structure for defining device regions; a gate with a ring-shaped structure; a drain located outside the ring; and a lightly doped drain, a source, and a body electrode located inside the ring. To increase the sub-threshold voltage at the corners of the gate, the corners are located completely on the isolation structure, or the lightly doped drain is apart from the corners by a predetermined distance.

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