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1. 发明授权

US4616331A Information processing system consisting of an arithmetic control unit formed into a one-chip typed by application of a highly-integrated semiconductor device 失效
标题翻译：信息处理系统由通过应用高度集成的半导体器件形成为单片的算术控制单元构成
公开(公告)号：US4616331A
公开(公告)日：1986-10-07
申请号：US236116
申请日：1981-02-19
申请人： Tsuneo Kinoshita , Fumitaka Sato , Isamu Yamazaki
发明人： Tsuneo Kinoshita , Fumitaka Sato , Isamu Yamazaki
IPC分类号： G06F9/38 , G06F9/30 , G06F13/00
CPC分类号： G06F9/3812 , G06F9/3802 , G06F9/3804
摘要： In a one-chip high density arithmetic control unit capable of prefetching user's instructions from main memory, an arithmetic logic unit (ALU) subtracts the contents of a location counter holding the address of the next instruction to be executed, from the contents of a memory address register holding an address into which data will be written. The difference is fed through the gates connected to the ALU for determining whether or not prefetched instructions will have to be refetched. An address matching mechanism provided outside the one-chip arithmetic control unit includes a comparator for comparing memory addresses to a preset execution stop address. The output signal of the comparator is stored in a memory section which is provided to correspond to the prefetched instruction buffer, and when an instruction stored in the prefetched instruction buffer is transferred to an instruction register, the signal stored in the corresponding memory section is also read out and used to determine whether to stop execution. Further, whenever access is made to main memory a signal indicating whether the access is legal is externally generated and may be stored in a second memory section. Like the address matching signal, this signal is read out when the corresponding instruction from the prefetched instruction buffer is transferred to the instruction register. An illegal address interruption is produced when this signal indicates that the address was illegal.
摘要翻译：在能够从主存储器预取用户指令的单芯片高密度算术控制单元中，算术逻辑单元（ALU）从存储器的内容中减去保持要执行的下一个指令的地址的位置计数器的内容地址寄存器保存写入数据的地址。差异通过连接到ALU的门馈送，以确定是否必须重新获取预取指令。在单芯片运算控制单元外提供的地址匹配机构包括比较器，用于将存储器地址与预设的执行停止地址进行比较。比较器的输出信号存储在与预取指令缓冲器相对应的存储器部分中，并且当存储在预取指令缓冲器中的指令被传送到指令寄存器时，存储在相应存储器部分中的信号也是读出并用于确定是否停止执行。此外，每当访问主存储器时，指示是否合法的信号是外部生成的，并且可以存储在第二存储器部分中。类似地址匹配信号，当来自预取指令缓冲器的相应指令被传送到指令寄存器时，该信号被读出。当该信号表示该地址是非法的时，产生非法地址中断。

2. 发明授权

US4734849A Information-processing system having a single chip arithmetic control unit with means for prefetching instructions 失效
标题翻译：信息处理系统具有单芯片运算控制单元，具有用于预取指令的装置
公开(公告)号：US4734849A
公开(公告)日：1988-03-29
申请号：US886807
申请日：1986-07-16
申请人： Tsuneo Kinoshita , Fumitaka Sato , Isamu Yamazaki
发明人： Tsuneo Kinoshita , Fumitaka Sato , Isamu Yamazaki
IPC分类号： G06F9/38 , G06F9/00
CPC分类号： G06F9/3812 , G06F9/3802 , G06F9/3804
摘要： In a one-chip high density arithmetic control unit capable of prefetching user's instructions from main memory, an arithmetic logic unit (ALU) subtracts the contents of a location counter holding the address of the next instruction to be executed, from the contents of a memory address register holding an address into which data will be written. The difference is fed through the gates connected to the ALU for determining whether or not prefetched instructions will have to be refetched. An address matching mechanism provided outside the one-chip arithmetic control unit includes a comparator for comparing memory addresses to a preset execution stop address. The output signal of the comparator is stored in a memory section which is provided to correspond to the prefetched instruction buffer, and when an instruction stored in the prefetched instruction buffer is transferred to an instruction register, the signal stored in the corresponding memory section is also read out and used to determine whether to stop execution. Further, whenever access is made to main memory a signal indicating whether the access is legal is externally generated and may be stored in a second memory section. Like the address matching signal, this signal is read out when the corresponding instruction from the prefeteched instruction buffer is transferred to the instruction register. An illegal address interruption is produced when this signal indicates that the address was illegal.

3. 发明授权

US4466055A Information processing system including a one-chip arithmetic control unit 失效
标题翻译：信息处理系统，包括单片机运算控制单元
公开(公告)号：US4466055A
公开(公告)日：1984-08-14
申请号：US244623
申请日：1981-03-17
申请人： Tsuneo Kinoshita , Fumitaka Sato , Isamu Yamazaki
发明人： Tsuneo Kinoshita , Fumitaka Sato , Isamu Yamazaki
IPC分类号： G06F13/40 , G06F13/42 , G06F15/78 , G06F3/00 , G06F13/00
CPC分类号： G06F13/4018 , G06F13/4217 , G06F15/7832
摘要： In an information processing system in which an arithmetic control unit is formed on one chip by very large scale integration and is connected to external devices by a common bus, microinstructions from an externally-connected control memory, memory information output from an external main memory and information output from I/O devices, can be received by the arithmetic control unit on the common bus. An external setting signal for selecting whether the instruction system of the arithmetic control unit is to be enabled or disabled is input to the arithmetic control unit on the common bus simultaneously with the fetching of a microinstruction. A bus width setting signal from an I/O device is also input to the arithmetic control unit on the common bus simultaneously with the fetching of a microinstruction, and the CPU determines whether the data width of an I/O device is 8 bits or 16 bits. An interruption signal from an I/O device and a signal indicating an abnormal condition of a power source, for example, may be input to the arithmetic control unit from external devices on the common bus as part of a group of external signals occupying only a portion of the common bus simultaneously with the fetching of a microinstruction on the remaining portion of the common bus. When exchanging a plurality of kinds of data with different phases between the arithmetic control unit and external devices on the common bus, an external status signal unique to each phase is input to the arithmetic control unit on a common signal line in synchronism with each phase.
摘要翻译：在一种信息处理系统中，其中通过非常大规模的集成在一个芯片上形成运算控制单元，并且通过公共总线连接到外部设备，来自外部连接的控制存储器的微指令，从外部主存储器输出的存储器信息和 I / O设备输出的信息可由公共总线上的运算控制单元接收。用于选择运算控制单元的指令系统是否被使能或禁用的外部设置信号在获取微指令时同时在公共总线上输入到运算控制单元。来自I / O设备的总线宽度设置信号也被同时输入到公共总线上的算术控制单元，同时获取微指令，并且CPU确定I / O设备的数据宽度是8位还是16 位。来自I / O设备的中断信号和指示电源异常状态的信号例如可以从公共总线上的外部设备输入到算术控制单元，作为仅占用一个公共总线的一部分同时在公共总线的剩余部分上取出微指令。当在公共总线上的算术控制单元和外部设备之间交换具有不同相位的多种数据时，每个相位独有的外部状态信号与每个相位同步地在公共信号线上输入到运算控制单元。

4. 发明授权

US09078817B2 Oily solid cosmetic 有权
标题翻译：油性固体化妆品
公开(公告)号：US09078817B2
公开(公告)日：2015-07-14
申请号：US13127003
申请日：2009-10-28
申请人： Kiriko Chiba , Fumitaka Sato
发明人： Kiriko Chiba , Fumitaka Sato
IPC分类号： A61K8/02 , A61K8/25 , A61K8/29 , A61K8/31 , A61Q1/06 , A61Q1/02 , A61Q1/10
CPC分类号： A61K8/022 , A61K8/025 , A61K8/0254 , A61K8/25 , A61K8/29 , A61K8/31 , A61K2800/412 , A61K2800/436 , A61K2800/592 , A61Q1/02 , A61Q1/06 , A61Q1/10
摘要： An oily solid cosmetic is capable of effectively diminishing morphological problems, such as vertical wrinkles, in particular on the lip, over a long period of time. The present invention provides an oily solid cosmetic which contains: (A) a plate-like composite powder presenting interference colors, (B) a spherical composite powder wherein the surface of a spherical powder having a refractive index of 1.40 to 1.60 is coated with a coating component having a refractive index of 2.00 to 2.90, and (C) 1 to 40% by mass of a semi-solid oil component. Preferably, the cosmetic of the present invention further contains (D) heavy isoparaffin. The cosmetic of the present invention is capable of diminishing vertical wrinkles, in particular on the lip, over a long period of time, and of maintaining a glossy lip.
摘要翻译：油性固体化妆品能够长时间有效地减少形态学问题，例如垂直皱纹，特别是在唇部上。本发明提供一种油性固体化妆品，其含有：（A）具有干涉色的板状复合粉末，（B）球状复合粉末，其中折射率为1.40〜1.60的球形粉末的表面涂布有涂料成分的折射率为2.00〜2.90，（C）为1〜40质量％的半固体成分。优选本发明的化妆品还含有（D）重质异链烷烃。本发明的化妆品能够长时间地减少垂直皱纹，特别是在唇部上，并且保持光泽的唇部。

5. 发明授权

US07858502B2 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
标题翻译： III族氮化物晶体物质的制造方法和制造装置
公开(公告)号：US07858502B2
公开(公告)日：2010-12-28
申请号：US12540492
申请日：2009-08-13
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

6. 发明申请

US20100275836A1 METHOD FOR GROWING GROUP III NITRIDE CRYSTAL 审中-公开
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：US20100275836A1
公开(公告)日：2010-11-04
申请号：US12812338
申请日：2009-01-08
申请人： Fumitaka Sato , Seiji Nakahata
发明人： Fumitaka Sato , Seiji Nakahata
IPC分类号： C30B23/04
CPC分类号： C30B29/406 , C30B25/18 , C30B25/186 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658
摘要： The present method for growing group III nitride crystal includes the steps of: preparing a substrate including group III nitride seed crystal constituting one main surface thereof; forming a plurality of facets on the main surface of the substrate through vapor phase etching; and growing group III nitride crystal on the main surface on which the facets are formed. In this way, group III nitride crystal having a low dislocation density can be obtained readily and efficiently.
摘要翻译：用于生长III族氮化物晶体的本发明方法包括以下步骤：制备包含构成其一个主表面的III族氮化物晶种的衬底; 通过气相蚀刻在基板的主表面上形成多个面; 并且在其上形成有小平面的主表面上生长III族氮化物晶体。以这种方式，可以容易且有效地获得具有低位错密度的III族氮化物晶体。

7. 发明授权

US07822613B2 Vehicle-mounted control apparatus and program that causes computer to execute method of providing guidance on the operation of the vehicle-mounted control apparatus 有权
标题翻译：车载控制装置和程序使计算机执行对车载控制装置的操作提供指导的方法
公开(公告)号：US07822613B2
公开(公告)日：2010-10-26
申请号：US10497695
申请日：2003-10-07
申请人： Tsutomu Matsubara , Masato Hirai , Emiko Kido , Fumitaka Sato
发明人： Tsutomu Matsubara , Masato Hirai , Emiko Kido , Fumitaka Sato
IPC分类号： G10L15/00 , G10L15/02
CPC分类号： G10L15/07 , G10L2015/223
摘要： In a vehicle-mounted control apparatus, a control unit 2 displays guidance on an operation of the vehicle-mounted control apparatus by voice input on a display device 6, and makes the user get training so that the user can master the techniques for operating the vehicle-mounted control apparatus (in step ST4). At this time, by using a voice which the user tries to input in order to master the techniques for operating the vehicle-mounted control apparatus, the voice recognition unit 5 learns the features of the user's voice in the background, and computes recognition parameters. Thereby, the user can know how to operate the vehicle-mounted control apparatus and can also register the features of the voice in the vehicle-mounted control apparatus.
摘要翻译：在车载控制装置中，控制单元2通过在显示装置6上的语音输入来显示关于车载控制装置的操作的指导，并且使得用户获得训练，使得用户可以掌握操作的技术车载控制装置（步骤ST4）。此时，通过使用用户尝试输入的语音来掌握用于操作车载控制装置的技术，语音识别单元5在后台学习用户语音的特征，并计算识别参数。因此，用户可以知道如何操作车载控制装置，并且还可以在车载控制装置中登记声音的特征。

8. 发明授权

US07772585B2 Nitride semiconductor substrate and method of producing same 有权
标题翻译：氮化物半导体衬底及其制造方法
公开(公告)号：US07772585B2
公开(公告)日：2010-08-10
申请号：US11446955
申请日：2006-06-06
申请人： Koji Uematsu , Fumitaka Sato , Ryu Hirota , Seiji Nakahata , Hideaki Nakahata
发明人： Koji Uematsu , Fumitaka Sato , Ryu Hirota , Seiji Nakahata , Hideaki Nakahata
IPC分类号： H01L31/00 , C30B25/00 , H01L21/00
CPC分类号： C30B29/403 , C30B25/18 , C30B29/406 , H01L21/0237 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02642 , H01L21/02647
摘要： A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, forming outlining concavities on mask-covered parts , not burying the facets, maintaining the convex facet hills on Π and the network concavities on , excluding dislocations in the facet hills down to the outlining concavities on , forming a defect accumulating region H on , decreasing dislocations in the facet hills and improving the facet hills to low defect density single crystal regions Z, producing a rugged nitride crystal, and slicing and polishing the nitride crystal into mirror nitride crystal wafers. After the fabrication of devices on the nitride wafer, dry-etching or wet etching of hot KOH or NaOH divides the device-carrying wafer into chips by corroding the network defect accumulating region H.
摘要翻译：通过在下衬底上形成重复闭环单元形状的网络掩模，在气相中生长氮化物半导体晶体，产生在暴露部分“Pgr”上覆盖有小面的凸面小丘，从而形成氮化物半导体晶体衬底; 覆盖部分，不掩埋小面，保持凸面小丘在＆Pgr; 和网络凹面，不考虑小平面上的位错，形成凹陷凹陷，形成缺陷积聚区H，减小了小平面山丘的位错，改善了小丘到低缺陷密度单晶区Z，产生了坚固的氮化物晶体，并将氮化物晶体切割和研磨成镜状氮化物晶片。在氮化物晶片上的器件制造之后，通过腐蚀网络缺陷累积区域H将热的KOH或NaOH的干蚀刻或湿法蚀刻将装载的晶片分成芯片。

9. 发明授权

US07723142B2 Growth method of GaN crystal, and GaN crystal substrate 失效
标题翻译： GaN晶体和GaN晶体衬底的生长方法
公开(公告)号：US07723142B2
公开(公告)日：2010-05-25
申请号：US12130082
申请日：2008-05-30
申请人： Naoki Matsumoto , Fumitaka Sato , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
发明人： Naoki Matsumoto , Fumitaka Sato , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
IPC分类号： H01L21/00 , H01L31/20
CPC分类号： C30B29/406 , C30B25/20
摘要： A method of producing a GaN crystal is directed to growing a GaN crystal on a GaN seed crystal substrate. The method includes the steps of preparing a GaN seed crystal substrate including a first dopant such that the thermal expansion coefficient of the GaN seed crystal substrate becomes greater than that of the GaN crystal, and growing the GaN crystal to a thickness of at least 1 mm on the GaN seed crystal substrate. Accordingly, there can be provided a method of producing a GaN crystal that can suppress generation of a crack and grow a thick GaN crystal, and a GaN crystal substrate.
摘要翻译：制造GaN晶体的方法涉及在GaN晶种衬底上生长GaN晶体。该方法包括以下步骤：制备包括第一掺杂剂的GaN晶种衬底，使得GaN晶种衬底的热膨胀系数变得大于GaN晶体的热膨胀系数，并将GaN晶体生长至至少1mm的厚度在GaN晶种衬底上。因此，可以提供一种能够抑制裂纹的产生和生长厚GaN的晶体的GaN晶体的制造方法以及GaN晶体基板。

10. 发明授权

US07124310B2 System including a computer and a fuel cell that communicates with the computer and supplies power to the computer 有权
标题翻译：系统包括计算机和与计算机通信并向计算机供电的燃料电池
公开(公告)号：US07124310B2
公开(公告)日：2006-10-17
申请号：US11127202
申请日：2005-05-12
申请人： Kyoji Hayashi , Nobutaka Nakamura , Naoki Fujiwara , Fumitaka Sato
发明人： Kyoji Hayashi , Nobutaka Nakamura , Naoki Fujiwara , Fumitaka Sato
IPC分类号： G06F1/26 , H02J1/00
CPC分类号： G06F1/263 , G06F1/1632 , Y10T307/696
摘要： A computer system of this invention includes a power input terminal which is provided outside a personal computer, and an external fuel cell assembly connected to the power input terminal. Hence, a computer system in which water produced from the fuel cell assembly is prevented from entering the computer can be provided. A personal computer for which an operation mode for deriving the personal computer by a fuel cell assembly is prepared to prevent any trouble due to user's misunderstanding can be provided.
摘要翻译：本发明的计算机系统包括设置在个人计算机外部的电力输入端子和连接到电力输入端子的外部燃料电池组件。因此，可以提供防止从燃料电池组件产生的水进入计算机的计算机系统。准备用于通过燃料电池组件导出个人计算机的操作模式的个人计算机，以防止由于用户的误解而导致的任何麻烦。

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