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1. 发明授权

US06858977B2 Cathode-ray tube and cathode-ray tube manufacturing method 失效
标题翻译：阴极射线管和阴极射线管的制造方法
公开(公告)号：US06858977B2
公开(公告)日：2005-02-22
申请号：US10152853
申请日：2002-05-23
申请人： Tsuneharu Nomura , Norihiro Ohse , Tomohiko Abe , Michihisa Yano , Seiji Kawaberi , Hisashi Kimura , Tsutomu Arai
发明人： Tsuneharu Nomura , Norihiro Ohse , Tomohiko Abe , Michihisa Yano , Seiji Kawaberi , Hisashi Kimura , Tsutomu Arai
IPC分类号： H01J9/20 , H01J9/24 , H01J29/28 , H01J29/88 , H01J31/10 , H01J29/18
CPC分类号： H01J29/88 , H01J2229/8916
摘要： The cathode-ray tube according to the present invention has on the inner surface of the funnel section of the body thereof a laminated layer comprising a first layer of black material, a metal backing layer and a second layer of black material.According to the configuration of the cathode-ray tube of the present invention, stray light reflected within the body of the cathode-ray tube is absorbed by the first layer of black material on the inner surface of the funnel, while stray light reflected off the inner surface of the funnel is absorbed by the second layer of black material. This makes it possible to reduce the amount of stray light incident upon the effective screen area of the panel section.
摘要翻译：根据本发明的阴极射线管在其本体的漏斗部分的内表面上具有包括第一层黑色材料，金属背衬层和第二层黑色材料的层压层。根据该结构本发明的阴极射线管中，在阴极射线管的体内反射的杂散光被漏斗的内表面上的第一层黑色材料吸收，而杂散光从漏斗的内表面反射出来漏斗被第二层黑色材料吸收。这使得可以减少入射到面板部分的有效屏幕区域上的杂散光的量。

2. 发明授权

US5648276A Method and apparatus for fabricating a thin film semiconductor device 失效
标题翻译：用于制造薄膜半导体器件的方法和装置
公开(公告)号：US5648276A
公开(公告)日：1997-07-15
申请号：US250679
申请日：1994-05-26
申请人： Masaki Hara , Naoki Sano , Toshiyuki Sameshima , Atsushi Kohno , Mitsunobu Sekiya , Yasuhiro Kanaya , Michihisa Yano
发明人： Masaki Hara , Naoki Sano , Toshiyuki Sameshima , Atsushi Kohno , Mitsunobu Sekiya , Yasuhiro Kanaya , Michihisa Yano
IPC分类号： H01L21/205 , H01L21/20 , H01L21/324 , H01L21/336 , H01L29/78 , H01L29/786
CPC分类号： H01L21/67207 , H01L29/4908 , H01L29/66757 , H01L29/78618 , H01L29/78675 , H01L29/78696
摘要： A method and an apparatus for fabricating a thin film semiconductor device are disclosed. An a-Si:H thin film produced on a wafer is melting-recrystallized by irradiating a laser beam to it in a laser annealing chamber to produce a polycrystalline Si thin film. The wafer is then transported to a CVD chamber without exposing it to the outside air. A gate insulating film is produced on a clean surface of the polycrystalline Si thin film in the CVD chamber. In another case, an a-Si:H thin film is melting-recrystallized in the laser annealing chamber to produce a polycrystalline Si thin film and then the wafer is transported to a hydrogenating chamber without exposing it to the outside air. Thereafter the polycrystalline Si thin film is plasma hydrogenated in the hydrogenating chamber. The method and apparatus can fabricate thin film semiconductor devices having a high performance and a high reliability with a good uniformity by making a clean and high quality semiconductor/insulator interface or by hydrogenating a semiconductor thin film without changes in electrical conductivity.
摘要翻译：公开了一种用于制造薄膜半导体器件的方法和装置。在晶片上制造的a-Si：H薄膜通过在激光退火室中照射激光束而产生多晶Si薄膜而进行熔融再结晶。然后将晶片输送到CVD室，而不将其暴露于外部空气。在CVD室中的多晶Si薄膜的清洁表面上产生栅极绝缘膜。在另一种情况下，a-Si：H薄膜在激光退火室中熔融再结晶以产生多晶Si薄膜，然后将晶片输送到氢化室，而不暴露于外部空气。此后，多晶Si薄膜在氢化室中被等离子体氢化。该方法和装置可以通过制造清洁且高质量的半导体/绝缘体界面或通过不导电导电性的变化来氢化半导体薄膜来制造具有高性能和高可靠性的薄膜半导体器件。

3. 发明授权

US5552663A Cathode ray tube apparatus 失效
标题翻译：阴极射线管装置
公开(公告)号：US5552663A
公开(公告)日：1996-09-03
申请号：US310325
申请日：1994-09-22
申请人： Koichi Iida , Michihisa Yano
发明人： Koichi Iida , Michihisa Yano
IPC分类号： H01J29/86 , H01J31/10 , H01J29/18
CPC分类号： H01J29/861 , H01J2229/8616
摘要： The present invention enlarges the effective display area of a CRT for projecting while maintaining the strength of the panel necessary to allow for normal usage without breaking. The inside portion of the effective display area inside the rectangular display area is of a predetermined radius, and protrudes inward, extending in all directions. The four corners of the display area are outside of the circular boundary line comprised of the standard thickness Tf. Non-display areas H which are outside the boundary line are flat or protuberant, and have a thickness greater than the standard thickness Tf. Accordingly, with the present invention, the effective display area A2 can be made larger than previous effective display areas A1 in the prior art, which could not extend beyond a border that included the four corners, while maintaining overall the necessary strength.
摘要翻译：本发明在保持需要的面板的强度而不破坏的情况下扩大用于投影的CRT的有效显示区域。矩形显示区域内的有效显示区域的内部部分是预定的半径，并向内突出，在所有方向上延伸。显示区域的四个角落在由标准厚度Tf组成的圆形边界线之外。在边界线之外的非显示区域H是平坦的或突出的，并且具有大于标准厚度Tf的厚度。因此，利用本发明，可以使有效显示区域A2大于现有技术中的先前有效显示区域A1，其不能超过包括四个角的边界，同时保持总体必要的强度。

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