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JP2013191848A Light-emitting device and method for manufacturing the same 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：JP2013191848A
公开(公告)日：2013-09-26
申请号：JP2013050495
申请日：2013-03-13
申请人： Tsmc Solid State Lighting Ltd , 台積固態照明股▲ふん▼有限公司
发明人： LO MING-HUA , LI ZHEN-YU , HSIA HSING-KUO , KUO HAO-CHUNG
IPC分类号： H01L33/14 , H01L33/06 , H01L33/30
CPC分类号： H01L33/025 , H01L33/007 , H01L33/325 , H01L33/36
摘要： PROBLEM TO BE SOLVED: To provide a structure of a light-emitting device having a P-GaN layer improved by changing a pressure in a chamber during the growth of a semiconductor layer, and a method for manufacturing the light-emitting device.SOLUTION: A light-emitting device includes a photonic die structure including an LED die. For example, the LED die is a vertical LED die. The LED die includes a substrate. A P-doped group III-V compound layer and an N-doped group III-V compound layer are respectively provided on the substrate. A multiple quantum well (MQW) layer is provided between the P-doped group III-V compound layer and the N-doped group III-V compound layer. The P-doped group III-V compound layer includes a first region having doping concentration characteristics which do not change exponentially and a second region having doping concentration characteristics which change exponentially. In a concrete example, the second region is formed using a lower pressure than in the first region.
摘要翻译：要解决的问题：提供通过在半导体层生长期间改变室中的压力而改进的具有P-GaN层的发光器件的结构，以及制造发光器件的方法。解决方案：发光器件包括包括LED管芯的光子管芯结构。例如，LED管芯是垂直的LED管芯。 LED管芯包括衬底。在基板上分别设置P掺杂III-V族化合物层和N掺杂III-V族化合物层。在P掺杂的III-V族化合物层和N掺杂的III-V族化合物层之间提供多量子阱（MQW）层。 P掺杂的III-V族化合物层包括具有不会呈指数变化的掺杂浓度特性的第一区域和具有指数变化的掺杂浓度特性的第二区域。在具体的例子中，使用比第一区域低的压力来形成第二区域。

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