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1. 发明授权

US07944025B2 Semiconductor constructions 有权
标题翻译：半导体结构
公开(公告)号：US07944025B2
公开(公告)日：2011-05-17
申请号：US11452830
申请日：2006-06-13
申请人： Trung Tri Doan , Terry L. Gilton
发明人： Trung Tri Doan , Terry L. Gilton
IPC分类号： H01L29/02
CPC分类号： G03F7/322 , G03F7/36
摘要： The invention includes a process whereby a solvent is utilized to remove soluble portions of a resist, and subsequently the solvent can be removed with a gas-fortified liquid. In particular aspects, the gas-fortified liquid emits bubbles during the removal of the solvent. Additionally, the gas-fortified liquid can be utilized to remove residual resist scum, and in such aspects the gas-fortified liquid can emit bubbles during the scum removal.
摘要翻译：本发明包括使用溶剂去除抗蚀剂的可溶部分的方法，随后用气体强化液体除去溶剂。在特定方面，气体强化液体在除去溶剂期间会发出气泡。此外，气体强化液体可用于去除残留的抗蚀剂浮渣，并且在这些方面，气体强化液体可以在浮渣期间发出气泡。

2. 发明授权

US08096121B2 Micro-machine and a method of powering a micro-machine 失效
标题翻译：微机和微机供电方法
公开(公告)号：US08096121B2
公开(公告)日：2012-01-17
申请号：US11452185
申请日：2006-06-13
申请人： Terry L. Gilton
发明人： Terry L. Gilton
IPC分类号： F03C1/00
CPC分类号： F01K27/005
摘要： A rotatable micro-machine is comprised of a solvent reservoir, a porous evaporation region and a channel connecting the solvent reservoir to the evaporation region. The evaporation region may be constructed of capillary paths that enable a capillary action which pulls solvent from the channel so as to enable a flow of solvent from the reservoir to the evaporation region through the channel. A rotatable member has portions in communication with the channel so as to be rotated by the flow. In one embodiment, the rotatable member may be a component of a micro-turbine generator. A system may be comprised of the rotatable micro-machine in combination with at least one electrical circuit. The porous region may be positioned to receive heat from the circuit. That may be accomplished in several ways; the evaporation region may be formed adjacent to the circuit, the evaporation region may be fabricated on the side of a die that is opposite of the side of the die carrying the circuit, or the reservoir, micro-turbine generator, evaporation region, and channel may be fabricated on one die and the circuit fabricated on another die. The two dies may then be connected to one another by a heat transferring adhesive with the evaporation region proximate to the circuit. Methods of operating a rotatable micro-machine are also disclosed. Because of the rules governing abstracts, this abstract should not be used in construing the claims.
摘要翻译：可旋转的微型机器包括溶剂容器，多孔蒸发区域和将溶剂容器连接到蒸发区域的通道。蒸发区域可以由毛细管路径构成，其能够进行毛细管作用，其从通道中拉出溶剂，以便能够使溶剂从储存器流过通过通道的蒸发区域。可旋转构件具有与通道连通的部分，以便由流动旋转。在一个实施例中，可旋转构件可以是微型涡轮发电机的部件。系统可以包括与至少一个电路组合的可旋转微型机器。多孔区域可以被定位成从电路接收热量。这可以通过几种方式实现; 蒸发区域可以与电路相邻地形成，蒸发区域可以制造在与承载电路的模具的侧面相反的模具的侧面，或者储存器，微型涡轮发电机，蒸发区域和通道可以在一个管芯上制造，并且在另一管芯上制造电路。然后可以通过具有靠近电路的蒸发区域的传热粘合剂将两个模具彼此连接。还公开了操作可旋转微型机器的方法。由于管理摘要的规则，本摘要不应用于解释索赔。

3. 发明授权

US07944768B2 Software refreshed memory device and method 有权
标题翻译：软件刷新存储器件和方法
公开(公告)号：US07944768B2
公开(公告)日：2011-05-17
申请号：US12824931
申请日：2010-06-28
申请人： Terry L. Gilton
发明人： Terry L. Gilton
IPC分类号： G11C7/00 , G11C11/00 , G06F13/00 , G06F13/28
CPC分类号： G11C5/005 , G11C11/406 , G11C11/40603 , G11C11/40622 , G11C13/0004 , G11C13/0011 , G11C13/0033 , G11C13/0069 , G11C16/3431
摘要： A software refreshed memory device comprises a plurality of memory cells that must be periodically refreshed to avoid losing data. Preferably, the memory cells can avoid losing data even though the time interval between successive memory refresh operations is relatively long, as compared to the time interval between successive memory refresh operations in a conventional volatile memory device, such as a DRAM. A processor can perform periodic memory refresh operations by executing a set of memory refresh instructions implemented in software, rather than in hardware. Accordingly, the memory device can advantageously be simplified, because the need for memory refresh circuitry and for a unique refresh control signal are advantageously eliminated. Moreover, the processor executing the memory refresh instructions can typically perform more sophisticated algorithms, as compared to memory refresh circuitry implemented in hardware, for determining when to perform a memory refresh operation. For example, the processor can determine whether each individual memory cell needs to be refreshed, thereby advantageously avoiding performing unnecessary refresh operations on memory cells that do not need to be refreshed.
摘要翻译：软件刷新的存储器件包括必须定期刷新以避免丢失数据的多个存储器单元。优选地，与常规易失性存储器件（例如DRAM）中的连续存储器刷新操作之间的时间间隔相比，即使连续存储器刷新操作之间的时间间隔相对较长，存储器单元也可避免丢失数据。处理器可以通过执行以软件实现的一组存储器刷新指令而不是硬件来执行周期性的存储器刷新操作。因此，有利地可以简化存储器件，因为有利地消除了对存储器刷新电路和唯一刷新控制信号的需要。此外，与硬件实现的存储器刷新电路相比，执行存储器刷新指令的处理器通常可以执行更复杂的算法，用于确定何时执行存储器刷新操作。例如，处理器可以确定每个单独的存储器单元是否需要刷新，从而有利地避免对不需要刷新的存储器单元执行不必要的刷新操作。

4. 发明授权

US07910397B2 Small electrode for resistance variable devices 有权
标题翻译：用于电阻可变器件的小电极
公开(公告)号：US07910397B2
公开(公告)日：2011-03-22
申请号：US11598089
申请日：2006-11-13
申请人： Jun Liu , Terry L. Gilton , John T. Moore
发明人： Jun Liu , Terry L. Gilton , John T. Moore
IPC分类号： H01L21/00
CPC分类号： H01L45/085 , H01L45/1233 , H01L45/1273 , H01L45/143 , H01L45/16
摘要： A memory element comprising first and second electrodes is provided. The first electrode is tapered such that a first end of the first electrode is larger than a second end of the first electrode. A resistance variable material layer is located between the first and second electrodes, and the second end of the first electrode is in contact with the resistance variable material. Methods for forming the memory element are also provided.
摘要翻译：提供包括第一和第二电极的存储元件。第一电极是锥形的，使得第一电极的第一端大于第一电极的第二端。电阻可变材料层位于第一和第二电极之间，第一电极的第二端与电阻变化材料接触。还提供了形成存储元件的方法。

5. 发明授权

US07768861B2 Software refreshed memory device and method 有权
标题翻译：软件刷新存储器件和方法
公开(公告)号：US07768861B2
公开(公告)日：2010-08-03
申请号：US12488817
申请日：2009-06-22
申请人： Terry L. Gilton
发明人： Terry L. Gilton
IPC分类号： G11C7/00 , G11C11/00 , G06F12/00 , G06F13/00
CPC分类号： G11C5/005 , G11C11/406 , G11C11/40603 , G11C11/40622 , G11C13/0004 , G11C13/0011 , G11C13/0033 , G11C13/0069 , G11C16/3431
摘要： A software refreshed memory device comprises a plurality of memory cells that must be periodically refreshed to avoid losing data. Preferably, the memory cells can avoid losing data even though the time interval between successive memory refresh operations is relatively long, as compared to the time interval between successive memory refresh operations in a conventional volatile memory device, such as a DRAM. A processor can perform periodic memory refresh operations by executing a set of memory refresh instructions implemented in software, rather than in hardware. Accordingly, the memory device can advantageously be simplified, because the need for memory refresh circuitry and for a unique refresh control signal are advantageously eliminated. Moreover, the processor executing the memory refresh instructions can typically perform more sophisticated algorithms, as compared to memory refresh circuitry implemented in hardware, for determining when to perform a memory refresh operation. For example, the processor can determine whether each individual memory cell needs to be refreshed, thereby advantageously avoiding performing unnecessary refresh operations on memory cells that do not need to be refreshed.
摘要翻译：软件刷新的存储器件包括必须定期刷新以避免丢失数据的多个存储器单元。优选地，与常规易失性存储器件（例如DRAM）中的连续存储器刷新操作之间的时间间隔相比，即使连续存储器刷新操作之间的时间间隔相对较长，存储器单元也可避免丢失数据。处理器可以通过执行以软件实现的一组存储器刷新指令而不是硬件来执行周期性的存储器刷新操作。因此，有利地可以简化存储器件，因为有利地消除了对存储器刷新电路和唯一刷新控制信号的需要。此外，与硬件实现的存储器刷新电路相比，执行存储器刷新指令的处理器通常可以执行更复杂的算法，用于确定何时执行存储器刷新操作。例如，处理器可以确定每个单独的存储器单元是否需要刷新，从而有利地避免对不需要刷新的存储器单元执行不必要的刷新操作。

6. 发明授权

US07692177B2 Resistance variable memory element and its method of formation 有权
标题翻译：电阻变量记忆元件及其形成方法
公开(公告)号：US07692177B2
公开(公告)日：2010-04-06
申请号：US11480412
申请日：2006-07-05
申请人： John T. Moore , Kristy A. Campbell , Terry L. Gilton
发明人： John T. Moore , Kristy A. Campbell , Terry L. Gilton
IPC分类号： H01L47/00
CPC分类号： C23C16/305 , C23C14/0623 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/1616 , H01L45/1625 , Y10T428/12694
摘要： A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a thickness of less than about 250 Angstroms over a second chalcogenide glass layer, formed over a first metal containing layer, formed over a first chalcogenide glass layer. The thin metal containing layer preferably is a silver layer. An electrode may be formed over the thin silver layer. The electrode preferably does not contain silver.
摘要翻译：本文公开了一种用于控制电阻变量存储元件中硫族化物玻璃的银掺杂的方法。该方法包括在第一硫族化物玻璃层上形成的厚度小于约250埃的含金属薄层，形成在第一硫族化物玻璃层上形成的第一金属含层上。含金属薄层优选为银层。可以在薄银层上方形成电极。电极优选不含银。

7. 发明授权

US07564731B2 Software refreshed memory device and method 有权
标题翻译：软件刷新存储器件和方法
公开(公告)号：US07564731B2
公开(公告)日：2009-07-21
申请号：US11806216
申请日：2007-05-30
申请人： Terry L. Gilton
发明人： Terry L. Gilton
IPC分类号： G11C7/00 , G11C27/00 , G11C11/00
CPC分类号： G11C5/005 , G11C11/406 , G11C11/40603 , G11C11/40622 , G11C13/0004 , G11C13/0011 , G11C13/0033 , G11C13/0069 , G11C16/3431
摘要： A software refreshed memory device comprises a plurality of memory cells that must be periodically refreshed to avoid losing data. Preferably, the memory cells can avoid losing data even though the time interval between successive memory refresh operations is relatively long, as compared to the time interval between successive memory refresh operations in a conventional volatile memory device, such as a DRAM. A processor can perform periodic memory refresh operations by executing a set of memory refresh instructions implemented in software, rather than in hardware. Accordingly, the memory device can advantageously be simplified, because the need for memory refresh circuitry and for a unique refresh control signal are advantageously eliminated. Moreover, the processor executing the memory refresh instructions can typically perform more sophisticated algorithms, as compared to memory refresh circuitry implemented in hardware, for determining when to perform a memory refresh operation. For example, the processor can determine whether each individual memory cell needs to be refreshed, thereby advantageously avoiding performing unnecessary refresh operations on memory cells that do not need to be refreshed.
摘要翻译：软件刷新的存储器件包括必须定期刷新以避免丢失数据的多个存储器单元。优选地，与常规易失性存储器件（例如DRAM）中的连续存储器刷新操作之间的时间间隔相比，即使连续存储器刷新操作之间的时间间隔相对较长，存储器单元也可避免丢失数据。处理器可以通过执行以软件实现的一组存储器刷新指令而不是硬件来执行周期性的存储器刷新操作。因此，有利地可以简化存储器件，因为有利地消除了对存储器刷新电路和唯一刷新控制信号的需要。此外，与硬件实现的存储器刷新电路相比，执行存储器刷新指令的处理器通常可以执行更复杂的算法，用于确定何时执行存储器刷新操作。例如，处理器可以确定每个单独的存储器单元是否需要刷新，从而有利地避免对不需要刷新的存储器单元执行不必要的刷新操作。

8. 发明授权

US07542319B2 Chalcogenide glass constant current device, and its method of fabrication and operation 有权
标题翻译：硫族化物玻璃恒流装置及其制造和操作方法
公开(公告)号：US07542319B2
公开(公告)日：2009-06-02
申请号：US11653883
申请日：2007-01-17
申请人： Kristy A. Campbell , Terry L. Gilton , John T. Moore , Joseph F. Brooks
发明人： Kristy A. Campbell , Terry L. Gilton , John T. Moore , Joseph F. Brooks
IPC分类号： G11C27/00
CPC分类号： C03C3/321 , C03C17/02 , G11C13/0004 , G11C13/0011 , G11C27/00 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/1608 , H01L45/1641
摘要： The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximately 700 mV. The invention also provides a method of changing and resetting the constant current value in a constant current device by either applying a positive potential to decrease the constant current value, or by applying a voltage more negative than the existing constant current's voltage upper limit, thereby resetting or increasing its constant current level to its original fabricated value. The invention further provides a method of forming and converting a memory device into a constant current device. The invention also provides a method for using a constant current device as an analog memory device.
摘要翻译：本发明涉及用于提供两端恒流装置的方法和装置及其操作。本发明提供一种恒定电流器件，其在至少约700mV的施加电压范围内保持恒定电流。本发明还提供了通过施加正电位以减小恒定电流值或施加比现有恒定电流电压上限更负的电压来改变和重置恒定电流装置中的恒定电流值的方法，由此重置或将其恒定电流水平提高到其原始制造值。本发明还提供一种将存储器件形成和转换成恒流器件的方法。本发明还提供一种使用恒流装置作为模拟存储装置的方法。

9. 发明授权

US07374174B2 Small electrode for resistance variable devices 有权
标题翻译：用于电阻可变器件的小电极
公开(公告)号：US07374174B2
公开(公告)日：2008-05-20
申请号：US11018366
申请日：2004-12-22
申请人： Jun Liu , Terry L. Gilton , John T. Moore
发明人： Jun Liu , Terry L. Gilton , John T. Moore
IPC分类号： H01L29/04
CPC分类号： H01L45/085 , H01L45/1233 , H01L45/1273 , H01L45/143 , H01L45/16
摘要： A memory element comprising first and second electrodes is provided. The first electrode is tapered such that a first end of the first electrode is larger than a second end of the first electrode. A resistance variable material layer is located between the first and second electrodes, and the second end of the first electrode is in contact with the resistance variable material. Methods for forming the memory element are also provided.
摘要翻译：提供包括第一和第二电极的存储元件。第一电极是锥形的，使得第一电极的第一端大于第一电极的第二端。电阻可变材料层位于第一和第二电极之间，第一电极的第二端与电阻变化材料接触。还提供了形成存储元件的方法。

10. 发明授权

US07223627B2 Memory element and its method of formation 有权
标题翻译：记忆元素及其形成方法
公开(公告)号：US07223627B2
公开(公告)日：2007-05-29
申请号：US10988836
申请日：2004-11-16
申请人： John T. Moore , Kristy A. Campbell , Terry L. Gilton
发明人： John T. Moore , Kristy A. Campbell , Terry L. Gilton
IPC分类号： H01L21/00 , H01L21/20
CPC分类号： C23C16/305 , C23C14/0623 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/1616 , H01L45/1625 , Y10T428/12694
摘要： A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a thickness of less than about 250 Angstroms over a second chalcogenide glass layer, formed over a first metal containing layer, formed over a first chalcogenide glass layer. The thin metal containing layer preferably is a silver layer. An electrode may be formed over the thin silver layer. The electrode preferably does not contain silver.
摘要翻译：本文公开了一种用于控制电阻变量存储元件中硫族化物玻璃的银掺杂的方法。该方法包括在第一硫族化物玻璃层上形成的厚度小于约250埃的含金属薄层，形成在第一硫族化物玻璃层上形成的第一金属含层上。含金属薄层优选为银层。可以在薄银层上方形成电极。电极优选不含银。

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