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1. 发明授权

US06238590B1 Tribochemical polishing of ceramics and metals 失效
标题翻译：陶瓷和金属的摩擦化学抛光
公开(公告)号：US06238590B1
公开(公告)日：2001-05-29
申请号：US09142107
申请日：1998-12-14
申请人： Traugott E. Fischer , Jianjun Wei , Sangrok Hah
发明人： Traugott E. Fischer , Jianjun Wei , Sangrok Hah
IPC分类号： H01L21302
CPC分类号： B24B1/00 , B24B37/042 , B24B39/06 , H01L21/31053 , H01L21/3212
摘要： A method of polishing selected ceramics and metals is provided wherein the selected ceramic or metal material is rubbed against a solid surface in the presence of a nonabrasive liquid medium which only attacks the selected ceramic or metal material under friction. Examples of materials for the tribochemical polishing process includes ceramics such as silicon, silicon nitride, silicon carbide, silicon oxide, titanium carbide and aluminum nitride and metals such as tungsten. Both ceramic and metal surfaces can be polished, as in a damascene structure of an integrated circuit.
摘要翻译：提供抛光所选择的陶瓷和金属的方法，其中在非磨蚀性液体介质的存在下，将所选择的陶瓷或金属材料摩擦固体表面，所述非磨料液体介质仅在摩擦下攻击所选择的陶瓷或金属材料。用于摩擦化学抛光工艺的材料的实例包括诸如硅，氮化硅，碳化硅，氧化硅，碳化钛和氮化铝的陶瓷，以及诸如钨的金属。可以抛光陶瓷和金属表面，如集成电路的镶嵌结构。

2. 发明授权

US06709970B1 Method for creating a damascene interconnect using a two-step electroplating process 有权
标题翻译：使用两步电镀工艺创建镶嵌互连的方法
公开(公告)号：US06709970B1
公开(公告)日：2004-03-23
申请号：US10232684
申请日：2002-09-03
申请人： Chankeun Park , Sangrok Hah , Juhyuck Chung , Hongseong Son , Byunglyul Park
发明人： Chankeun Park , Sangrok Hah , Juhyuck Chung , Hongseong Son , Byunglyul Park
IPC分类号： H01L214763
CPC分类号： H01L21/76877
摘要： A method for forming void-free, low contact-resistance damascene interconnects during a manufacturing process of an integrated circuit having both narrow and deep openings and wide and shallow openings on a same substrate features a two-step copper (Cu) deposition process, with a high-temperature rapid annealing process being conducted after the first deposition. After forming in a top surface a narrow and deep opening and a wide and shallow opening, a first copper (Cu) layer is deposited on a seed layer using a small-grained Cu material to completely fill the narrow and deep opening. After annealing the first Cu layer to reduce stress on the resulting structure, a second layer of large-grained Cu material is deposited on the annealed first Cu layer to fill the remainder of the openings. The resulting assembly, which requires no additional annealing, is then planarized to the original surface.
摘要翻译：在同一衬底上具有窄和深开口以及宽而浅的开口的集成电路的制造过程中形成无空隙的低接触电阻大马士革互连的方法具有两步铜（Cu）沉积工艺，其中，在第一次沉积之后进行高温快速退火工艺。在顶表面形成窄而深的开口和宽而浅的开口之后，使用小粒度的Cu材料将第一铜（Cu）层沉积在种子层上，以完全填充窄而深的开口。在退火第一Cu层以减小所得结构上的应力之后，在退火的第一Cu层上沉积第二层大粒度的Cu材料以填充其余的开口。然后将不需要额外退火的所得组件平坦化到原始表面。

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