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1. 发明专利

JP2007243072A Semiconductor optical amplifier composite semiconductor laser apparatus 审中-公开
标题翻译：半导体光放大器复合半导体激光器
公开(公告)号：JP2007243072A
公开(公告)日：2007-09-20
申请号：JP2006066756
申请日：2006-03-10
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： INOUE DAISUKE , ITO KENJI , KACHI TORU , ITO HIROSHI , SATO AKIO
IPC分类号： H01S5/22 , G02B6/122 , H01S5/026 , H01S5/12
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical amplifier composite semiconductor laser apparatus capable of providing the high stimulation efficiency of a laser beam with high beam quality wherein waveform distortion is small and mode disturbance is suppressed. SOLUTION: A layer structure including: a laser 25 of a semiconductor laser structure; and an optical amplifier 26 of a semiconductor optical amplifier structure with a staircase ridge structure wherein an InP clad layer 16 and an InGaAs contact layer 17 both adopting tapered structures are overlapped in a way of two-stages are formed on an InP substrate 11. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体光放大复合半导体激光装置，其能够提供具有波长畸变小且抑制模式干扰的高光束质量的激光束的高刺激效率。解决方案：一种层结构，包括：半导体激光器结构的激光器25; 并且具有阶梯脊结构的半导体光放大器结构的光放大器26，其中在InP衬底11上形成两级采用锥形结构的InP包层16和InGaAs接触层17以两级重叠。 P>版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2007234990A Micro-optical element and manufacturing method thereof 审中-公开
标题翻译：微光元件及其制造方法
公开(公告)号：JP2007234990A
公开(公告)日：2007-09-13
申请号：JP2006056811
申请日：2006-03-02
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： ITO KENJI , INOUE DAISUKE , ITO HIROSHI , SATO AKIO
IPC分类号： H01S5/022 , H01S5/183
摘要： PROBLEM TO BE SOLVED: To provide a micro-optical element and manufacturing method thereof in which it is not necessary to align an optical axis of a lens and an optical axis of laser light, high productivity is included and a laser light emission plane can be effectively utilized.
SOLUTION: The present invention relates to a micro-optical element characterized in forming a plurality of steps 4 on a substrate 2 and integrally forming a lens 6 over all the top face of each of the steps 4. Furthermore, the present invention relates to a micro-optical element manufacturing method characterized in including a surface light emission laser production step of producing a surface light emission layer by performing step formation processing to form the plurality of steps on the substrate, and a lens formation step of integrally forming the lens over all the top face of each of the steps.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种微型光学元件及其制造方法，其中不需要使透镜的光轴与激光的光轴对准，因此包括高生产率和激光发射飞机可以有效利用。解决方案：本发明涉及一种微光学元件，其特征在于在基板2上形成多个台阶4，并且在每个台阶4的整个顶面上整体地形成透镜6.此外，本发明涉及一种微型光学元件制造方法，其特征在于包括：表面发光激光制造步骤，通过进行步骤形成处理，在所述基板上形成所述多个台阶来制造面发光层;以及透镜形成工序，镜头在每个步骤的所有顶面上。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2006066681A Vertical resonance type high output surface-emitting laser 审中-公开
标题翻译：垂直共振型高输出表面发射激光
公开(公告)号：JP2006066681A
公开(公告)日：2006-03-09
申请号：JP2004248010
申请日：2004-08-27
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SANPEI KAZUHISA , SATO AKIO , INOUE DAISUKE , ITO KENJI , KACHI TORU , ITO HIROSHI
IPC分类号： H01S5/187 , H01S5/343 , H01S5/42
摘要： PROBLEM TO BE SOLVED: To simulate and validate constitutional conditions of a surface-emitting laser device, where the number of semiconductor multilayer film layers, the number of quantum well layers, the relative value in gain peaks of a reflector and a quantum well at room temperature or the like can be improved in output.
SOLUTION: A vertical resonance type surface emitting laser comprises a laminate structure having a pair of distribution Bragg-reflection-type semiconductor multilayer film reflectors provided on and under an active layer which is formed on a semiconductor substrate for emitting laser light from the side of an n-type multilayer film reflector 104. A p-type multilayer film reflector 108 comprises 39 or more pairs of p-type AlGaAs with different composition alternately laminated, the n-type multilayer film reflector 104 comprises n-type AlGaAs with different composition alternately laminated, and the number of laminates is smaller than the number of laminates of the reflector 108.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了模拟和验证表面发射激光器件的结构条件，其中半导体多层膜层的数量，量子阱层的数量，反射器的增益峰值中的相对值和量子可以在室温等下进行输出。解决方案：垂直共振型表面发射激光器包括具有一对分布布拉格反射型半导体多层膜反射器的层压结构，其设置在有源层上和下面，该反射器形成在半导体衬底上，用于发射来自 n型多层膜反射器104包括39对或更多对具有交替层叠的不同组成的p型AlGaAs，n型多层膜反射器104包括具有不同形状的n型AlGaAs 组合物交替层压，并且层压体的数量小于反射器108的层压体的数量。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2005039150A Edge-emitting-type semiconductor laser 审中-公开
标题翻译：边缘发射型半导体激光器
公开(公告)号：JP2005039150A
公开(公告)日：2005-02-10
申请号：JP2003276919
申请日：2003-07-18
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SANPEI KAZUHISA , SATO AKIO , MATSUBARA HIROYUKI , HASEGAWA KAZUO , ICHIKAWA TADASHI , MAEDA MITSUTOSHI , ITO HIROSHI
IPC分类号： H01S5/125
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser of large output power in which variation of oscillating conditions by variation of external optical conditions such as dirt on the emission edge face or the arrangement of optical parts is reduced.
SOLUTION: The active layer 14 of the semiconductor laser has a DBR reflecting layer 15 on the emission-edge side, while a space for phase adjustment, where no DBR reflecting layer is formed, is provided between the emission edge 16 and the end of the emission-edge side of the DBR reflecting layer 15.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种大输出功率的半导体激光器，其中通过外部光学条件（例如发光边缘面上的污物）或光学部件的布置的变化而产生的振荡条件的变化减小。解决方案：半导体激光器的有源层14在发射边缘侧具有DBR反射层15，而在发射边缘16和发射边缘16之间设置没有形成DBR反射层的相位调整空间 DBR反射层15的发射边缘侧的端部。（C）2005年，JPO和NCIPI

5. 发明专利

JP2004325957A Optical multiplexer 有权
公开(公告)号：JP2004325957A
公开(公告)日：2004-11-18
申请号：JP2003122655
申请日：2003-04-25
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SATO AKIO , SANPEI KAZUHISA , HASEGAWA KAZUO , MATSUBARA HIROYUKI , ICHIKAWA TADASHI , MAEDA MITSUTOSHI , ITO HIROSHI
IPC分类号： G02B6/28
摘要： PROBLEM TO BE SOLVED: To provide an optical multiplexer which can multiplex the output light of a plurality of incident side optical fibers to an exit side optical fiber with high efficiency.
SOLUTION: The light exit ends of a plurality of incident side optical fibers cores 11 and the light incident end of an exit side optical fiber core 16 are formed in a shape converging toward the front end and are arranged within a transparent body 13 having a refractive index smaller than the refractive index of the incident side optical fibers cores and the refractive index of the exit side optical fiber core in such a manner that their axial positions overlap each other.
COPYRIGHT: (C)2005,JPO&NCIPI

6. 发明专利

JP2005229060A Semiconductor laser light source 审中-公开
标题翻译：半导体激光光源
公开(公告)号：JP2005229060A
公开(公告)日：2005-08-25
申请号：JP2004038733
申请日：2004-02-16
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SATO AKIO , SANPEI KAZUHISA , HASEGAWA KAZUO , MATSUBARA HIROYUKI , ICHIKAWA TADASHI , MAEDA MITSUTOSHI , ITO HIROSHI
IPC分类号： G02B6/42 , G02B6/122 , H01S5/14 , H01S5/22
摘要： PROBLEM TO BE SOLVED: To improve the output characteristic of a semiconductor laser light source obtained by combining a semiconductor laser array and an optical multiplexer. SOLUTION: In the semiconductor laser light source obtained by combining the semiconductor laser array 1 and the optical multiplexer 2, an optical resonator is constituted of a high reflection mirror 3 arranged on the opposite side to the outgoing end of the semiconductor laser array 1 and a reflection mirror 4 arranged on the outgoing end side of the optical multiplexer 2. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提高通过组合半导体激光器阵列和光复用器而获得的半导体激光光源的输出特性。解决方案：在通过组合半导体激光器阵列1和光复用器2而获得的半导体激光光源中，光谐振器由布置在半导体激光器阵列的出射端的相对侧上的高反射镜3 1和反射镜4，布置在光复用器2的出射端侧。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2006066664A Double-side cooling surface emitting laser device 审中-公开
标题翻译：双面冷却表面发射激光器件
公开(公告)号：JP2006066664A
公开(公告)日：2006-03-09
申请号：JP2004247770
申请日：2004-08-27
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SATO AKIO , SANPEI KAZUHISA , INOUE DAISUKE , ITO KENJI , KACHI TORU , ITO HIROSHI
IPC分类号： H01S5/024
摘要： PROBLEM TO BE SOLVED: To cool a surface emitting laser device intensively, using an inexpensive material, to reduce heat resistance and improve light-emitting efficiency to enable the device to make large output.
SOLUTION: The double-side cooling surface emitting laser device has a surface emitting semiconductor laser element 102 which is in contact with an electrode on the laser-emitting side, the electrode having apertures 101 having a shape almost equal to or slightly larger than the section of emitted laser beams, and is in contact with a radiation board 104 on the non-laser-emitting side.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了降低耐热性和提高发光效率，为了使器件能够实现大的输出，为了冷却表面发射激光器件，使用便宜的材料来冷却表面发射激光器件。解决方案：双面冷却表面发射激光器件具有与激光发射侧的电极接触的表面发射半导体激光元件102，电极具有孔101，其形状几乎等于或稍大比发射的激光束的部分，并且与非激光发射侧的辐射板104接触。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005277080A Surface-emitting semiconductor laser device 有权
标题翻译：表面发射半导体激光器件
公开(公告)号：JP2005277080A
公开(公告)日：2005-10-06
申请号：JP2004087746
申请日：2004-03-24
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： INOUE DAISUKE , ITO KENJI , KACHI TORU , ITO HIROSHI , SANPEI KAZUHISA , SATO AKIO
IPC分类号： H01S5/187
摘要： PROBLEM TO BE SOLVED: To solve a problem that the direction of a polarized wave of an ejected laser beam is not settled in a surface-emitting semiconductor laser utilizing a diffraction grating.
SOLUTION: The surface-emitting semiconductor laser device is provided with a lamination structure wherein an active layer 26 is formed between a pair of a lower clad layer 24 and an upper clad layer 28. The diffraction grating 32 is formed on the upper clad layer 28. The diffraction grating 32 is has a bearing range constituted of the diffraction grating 32 in which a distance from a center to the diffraction grating 32 is uniform. Further, the diffraction grating 32 has the other bearing range having a distance (the diffraction grating is not formed, and therefore, the distance is substantially infinity) different from the uniform distance. The bearing range is a region 32a wherein ring opening regions of a plurality of the diffraction gratings 32 coincide along the peripheral direction from the center of the diffraction gratings 32.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了解决使用衍射光栅的喷射激光束的偏振波的方向没有落在表面发射半导体激光器中的问题。解决方案：表面发射半导体激光器件设置有层叠结构，其中在一对下包层24和上覆层28之间形成有源层26.衍射光栅32形成在上层衍射光栅32具有由衍射光栅32构成的轴承范围，其中从中心到衍射光栅32的距离是均匀的。此外，衍射光栅32具有与均匀距离不同的距离（衍射光栅未形成，因此距离基本上无限大）的另一个轴承范围。轴承范围是区域32a，其中多个衍射光栅32的开环区域沿着衍射光栅32的中心沿圆周方向重合。（C）2006，JPO和NCIPI

9. 发明专利

JP2005026625A Surface-emitting laser and its manufacturing method 审中-公开
标题翻译：表面发射激光及其制造方法
公开(公告)号：JP2005026625A
公开(公告)日：2005-01-27
申请号：JP2003270710
申请日：2003-07-03
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SATO AKIO , SANPEI KAZUHISA , ITO HIROSHI , KACHI TORU , MATSUBARA HIROYUKI , ITO KENJI , HASEGAWA KAZUO , INOUE DAISUKE
IPC分类号： H01L21/316 , H01S5/183
摘要： PROBLEM TO BE SOLVED: To improve the uniformity and yield of processing by increasing the controllability of an oxidizing process. SOLUTION: An area of an AlAs layer 15 to be oxidized is irradiated with laser light according to the pattern of a mask layer 18 and the difference in reactivity between the laser irradiated part and an unirradiated part is used to generate a difference in oxidation speed, thereby making the oxidation stop at a laser light irradiation boundary. COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2005019804A Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：JP2005019804A
公开(公告)日：2005-01-20
申请号：JP2003184477
申请日：2003-06-27
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SATO AKIO , SANPEI KAZUHISA , ITO HIROSHI , MAEDA MITSUTOSHI , KACHI TORU , ICHIKAWA TADASHI , MATSUBARA HIROYUKI , ITO KENJI , HASEGAWA KAZUO , INOUE DAISUKE
IPC分类号： H01S5/42 , H01S5/022 , H01S5/183
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of emitting a laser beam high in beam quality and power.
SOLUTION: Rays emitted by a surface emitting laser chip 13, wherein surface emitting laser elements 21 are arranged in a two-dimensional array, are condensed by a condenser 15 for the generation of a high-power laser beam. By providing reflectors 16 on the plane of the condenser 15 facing the surface emitting laser elements 21, the oscillation mode of each of surface emitting laser elements 21 is selected to make it in a single mode and to make it have a high power.
COPYRIGHT: (C)2005,JPO&NCIPI

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