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1. 发明授权

US07589528B2 Magnetic sensor formed of magnetoresistance effect elements 有权
标题翻译：磁传感器由磁阻效应元件形成
公开(公告)号：US07589528B2
公开(公告)日：2009-09-15
申请号：US11682841
申请日：2007-03-06
申请人： Hideki Sato , Toshiyuki Oohashi , Yukio Wakui , Susumu Yoshida , Kokichi Aiso
发明人： Hideki Sato , Toshiyuki Oohashi , Yukio Wakui , Susumu Yoshida , Kokichi Aiso
IPC分类号： G01R33/02
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/093 , H01F41/302 , Y10T29/49002 , Y10T29/49037 , Y10T428/32
摘要： On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.
摘要翻译：在单个芯片上形成有多个磁阻效应元件，该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。形成由NiCo制成的磁场施加磁性层，以在平面图中夹着磁性层。对磁场施加磁性层施加磁场。在磁场施加磁性层沿着箭头A所示的方向被磁化之后，去除磁场。结果，通过磁场施加磁性层的剩余磁化，所示方向上的磁场通过箭头B施加到将成为磁隧道效应元件11,21的磁性层，由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向上。

2. 发明申请

US20070182407A1 MAGNETIC SENSOR AND METHOD OF PRODUCING THE SAME 有权
标题翻译：磁传感器及其制造方法
公开(公告)号：US20070182407A1
公开(公告)日：2007-08-09
申请号：US11682841
申请日：2007-03-06
申请人： Hideki Sato , Toshiyuki Oohashi , Yukio Wakui , Susumu Yoshida , Kokichi Aiso
发明人： Hideki Sato , Toshiyuki Oohashi , Yukio Wakui , Susumu Yoshida , Kokichi Aiso
IPC分类号： G01R15/18 , G01R33/02
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/093 , H01F41/302 , Y10T29/49002 , Y10T29/49037 , Y10T428/32
摘要： On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.
摘要翻译：在单个芯片上形成有多个磁阻效应元件，该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。形成由NiCo制成的磁场施加磁性层，以在平面图中夹着磁性层。对磁场施加磁性层施加磁场。在磁场施加磁性层沿着箭头A所示的方向被磁化之后，去除磁场。结果，通过磁场施加磁性层的剩余磁化，所示方向上的磁场通过箭头B施加到将成为磁隧道效应元件11,21的磁性层，由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向。

3. 发明授权

US06904669B2 Magnetic sensor and method of producing the same 有权
标题翻译：磁传感器及其制造方法
公开(公告)号：US06904669B2
公开(公告)日：2005-06-14
申请号：US10052525
申请日：2002-01-23
申请人： Hideki Sato , Toshiyuki Oohashi , Yukio Wakui , Susumu Yoshida , Kokichi Aiso
发明人： Hideki Sato , Toshiyuki Oohashi , Yukio Wakui , Susumu Yoshida , Kokichi Aiso
IPC分类号： G01R33/09 , H01F10/14 , H01F41/18 , H01F41/30 , H01L43/08 , H01L43/12 , H01F10/08 , H01L21/00
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/093 , H01F41/302 , Y10T29/49002 , Y10T29/49037 , Y10T428/32
摘要： On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.
摘要翻译：在单个芯片上形成有多个磁阻效应元件，该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。形成由NiCo制成的磁场施加磁性层，以在平面图中夹着磁性层。对磁场施加磁性层施加磁场。在磁场施加磁性层沿着箭头A所示的方向被磁化之后，去除磁场。结果，通过磁场施加磁性层的剩余磁化，所示方向上的磁场通过箭头B施加到将成为磁隧道效应元件11,21的磁性层，由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向。

4. 发明授权

US07023310B2 Method for manufacturing magnetic sensor, magnet array used in the method, and method for manufacturing the magnet array 失效
标题翻译：用于制造磁性传感器的方法，该方法中使用的磁体阵列以及用于制造磁体阵列的方法
公开(公告)号：US07023310B2
公开(公告)日：2006-04-04
申请号：US11076069
申请日：2005-03-10
申请人： Toshiyuki Oohashi , Kokichi Aiso
发明人： Toshiyuki Oohashi , Kokichi Aiso
IPC分类号： H01H7/02 , G11B5/127
CPC分类号： B82Y25/00 , G01R33/093 , Y10T29/49002 , Y10T29/49021
摘要： A magnetic sensor includes eight SAF-type GMR elements. Four of the GMR elements detect a magnetic field in the direction of the X-axis and are bridge-connected to thereby constitute an X-axis magnetic sensor. The other four GMR elements detect a magnetic field in the direction of the Y-axis and are bridge-connected to thereby constitute a Y-axis magnetic sensor. The magnetization of a pinned layer of each of the GMR elements is pinned in a fixed direction by means of a magnetic field that a permanent bar magnet inserted into a square portion of a yoke of a magnet array generates in the vicinity of a rectangular portion of the yoke. A magnetic field generated in the vicinity of a certain rectangular portion of the yoke differs in direction by 90 degrees from a magnetic field generated in the vicinity of a rectangular portion adjacent to the former rectangular portion.
摘要翻译：磁传感器包括八个SAF型GMR元件。四个GMR元件在X轴的方向上检测磁场并被桥接，从而构成X轴磁性传感器。另外四个GMR元件在Y轴方向上检测磁场并桥接，从而构成Y轴磁传感器。每个GMR元件的被钉扎层的磁化通过磁场固定在固定方向上，该磁场插入到磁体阵列的磁轭的方形部分中的永久磁棒磁体在轭。在轭的某个矩形部分附近产生的磁场在与前一个矩形部分相邻的矩形部分附近产生的磁场方向相差90度。

5. 发明授权

US07187167B2 Magnetic sensor 有权
标题翻译：磁传感器
公开(公告)号：US07187167B2
公开(公告)日：2007-03-06
申请号：US10846554
申请日：2004-05-17
申请人： Hideki Sato , Toshiyuki Oohashi , Yukio Wakui , Susumu Yoshida , Kokichi Aiso
发明人： Hideki Sato , Toshiyuki Oohashi , Yukio Wakui , Susumu Yoshida , Kokichi Aiso
IPC分类号： G01R33/09
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/093 , H01F41/302 , Y10T29/49002 , Y10T29/49037 , Y10T428/32
摘要： On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.
摘要翻译：在单个芯片上形成有多个磁阻效应元件，该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。形成由NiCo制成的磁场施加磁性层，以在平面图中夹着磁性层。对磁场施加磁性层施加磁场。在磁场施加磁性层沿着箭头A所示的方向被磁化之后，去除磁场。结果，通过磁场施加磁性层的剩余磁化，所示方向上的磁场通过箭头B施加到将成为磁隧道效应元件11,21的磁性层，由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向上。

6. 发明申请

US20050200449A1 METHOD FOR MANUFACTURING MAGNETIC SENSOR, MAGNET ARRAY USED IN THE METHOD, AND METHOD FOR MANUFACTURING THE MAGNET ARRAY 失效
标题翻译：用于制造磁性传感器的方法，该方法中使用的磁体阵列以及制造磁体阵列的方法
公开(公告)号：US20050200449A1
公开(公告)日：2005-09-15
申请号：US11076069
申请日：2005-03-10
申请人： Toshiyuki Oohashi , Kokichi Aiso
发明人： Toshiyuki Oohashi , Kokichi Aiso
IPC分类号： H01L43/02 , G01R33/09 , H01L43/00 , H01L43/08 , H01L43/12
CPC分类号： B82Y25/00 , G01R33/093 , Y10T29/49002 , Y10T29/49021
摘要： A magnetic sensor includes eight SAF-type GMR elements. Four of the GMR elements detect a magnetic field in the direction of the X-axis and are bridge-connected to thereby constitute an X-axis magnetic sensor. The other four GMR elements detect a magnetic field in the direction of the Y-axis and are bridge-connected to thereby constitute a Y-axis magnetic sensor. The magnetization of a pinned layer of each of the GMR elements is pinned in a fixed direction by means of a magnetic field that a permanent bar magnet inserted into a square portion of a yoke of a magnet array generates in the vicinity of a rectangular portion of the yoke. A magnetic field generated in the vicinity of a certain rectangular portion of the yoke differs in direction by 90 degrees from a magnetic field generated in the vicinity of a rectangular portion adjacent to the former rectangular portion.
摘要翻译：磁传感器包括八个SAF型GMR元件。四个GMR元件在X轴的方向上检测磁场并被桥接，从而构成X轴磁性传感器。另外四个GMR元件在Y轴方向上检测磁场并桥接，从而构成Y轴磁传感器。每个GMR元件的被钉扎层的磁化通过磁场固定在固定方向上，该磁场插入到磁体阵列的磁轭的方形部分中的永久磁棒磁体在轭。在轭的某个矩形部分附近产生的磁场在与前一个矩形部分相邻的矩形部分附近产生的磁场方向相差90度。

7. 发明申请

US20060268469A1 Magnetic sensor and manufacturing method therefor 失效
标题翻译：磁传感器及其制造方法
公开(公告)号：US20060268469A1
公开(公告)日：2006-11-30
申请号：US11497378
申请日：2006-08-02
申请人： Hideki Sato , Kokichi Aiso , Yukio Wakui
发明人： Hideki Sato , Kokichi Aiso , Yukio Wakui
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/0005 , G01R33/09 , H01F10/3268 , H01F10/3295 , H01F41/304 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49052 , Y10T29/49067
摘要： A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.
摘要翻译：磁传感器包括磁阻元件和永磁体膜，它们组合在一起以形成形成在具有正方形形状的石英衬底上的GMR元件，其中永磁体膜成对并连接到磁阻元件的两端，使得X 通过将GMR元件相对于石英基板的四个边进行适当配置来实现轴向磁传感器和Y轴磁传感器。这里，磁阻元件的被钉扎层的磁化方向相对于磁阻元件的长度方向相对于永久磁铁膜的磁化方向形成45°的规定角度。因此，即使施加强磁场，也可以可靠地抑制GMR元件的桥连接的偏移变化; 因此可以显着地提高对强磁场的电阻特性。

8. 发明申请

US20060268468A1 Magnetic sensor and manufacturing method therefor 失效
公开(公告)号：US20060268468A1
公开(公告)日：2006-11-30
申请号：US11497352
申请日：2006-08-02
申请人： Hideki Sato , Kokichi Aiso , Yukio Wakui
发明人： Hideki Sato , Kokichi Aiso , Yukio Wakui
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/0005 , G01R33/09 , H01F10/3268 , H01F10/3295 , H01F41/304 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49052 , Y10T29/49067
摘要： A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.

9. 发明申请

US20050054120A1 Magnetic sensor and manufacturing method therefor 有权
标题翻译：磁传感器及其制造方法
公开(公告)号：US20050054120A1
公开(公告)日：2005-03-10
申请号：US10891451
申请日：2004-07-15
申请人： Yukio Wakui , Susumu Yoshida , Kokichi Aiso
发明人： Yukio Wakui , Susumu Yoshida , Kokichi Aiso
IPC分类号： H01L43/08 , G01R33/09 , H01L21/00
CPC分类号： G01R33/0052 , B82Y25/00 , G01R33/093
摘要： A magnetic sensor comprises a substrate, magnetoresistive element of a spin-valve type, a bias magnetic layer (or a permanent magnet film), and a protective film, wherein the bias magnetic layer is connected with both ends of the magnetoresistive element and the upper surface thereof is entirely covered with the lower surface of the magnetoresistive element at both ends. Herein, distances between the side surfaces of the both ends of the magnetoresistive element and the side surfaces of the bias magnetic layer viewed from the protective film do not exceed 3 μm. In addition, a part of the bias magnetic layer can be covered with both ends of the magnetoresistive element, and an intermediate layer is arranged in relation to the magnetoresistive element, bias magnetic layer, and protective film so as to entirely cover the upper surface of the bias magnetic layer.
摘要翻译：磁传感器包括基板，自旋阀型磁阻元件，偏磁层（或永磁体膜）和保护膜，其中偏磁层与磁阻元件的两端连接，其表面完全被两端的磁阻元件的下表面覆盖。这里，磁阻元件的两端的侧面与从保护膜观察的偏磁层的侧面之间的距离不超过3μm。此外，偏磁层的一部分可以被磁阻元件的两端覆盖，并且相对于磁阻元件，偏磁层和保护膜布置中间层，以便完全覆盖磁阻元件的上表面偏磁层。

10. 发明授权

US07360302B2 Manufacturing method of a magnetic sensor 失效
标题翻译：磁传感器的制造方法
公开(公告)号：US07360302B2
公开(公告)日：2008-04-22
申请号：US11497352
申请日：2006-08-02
申请人： Hideki Sato , Kokichi Aiso , Yukio Wakui
发明人： Hideki Sato , Kokichi Aiso , Yukio Wakui
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/0005 , G01R33/09 , H01F10/3268 , H01F10/3295 , H01F41/304 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49052 , Y10T29/49067
摘要： A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.
摘要翻译：磁传感器包括磁阻元件和永磁体膜，它们组合在一起以形成形成在具有正方形形状的石英衬底上的GMR元件，其中永磁体膜成对并连接到磁阻元件的两端，使得X 通过将GMR元件相对于石英基板的四个边进行适当配置来实现轴向磁传感器和Y轴磁传感器。这里，磁阻元件的被钉扎层的磁化方向相对于磁阻元件的长度方向相对于永久磁铁膜的磁化方向形成45°的规定角度。因此，即使施加强磁场，也可以可靠地抑制GMR元件的桥连接的偏移变化; 因此可以显着地提高对强磁场的电阻特性。

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