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1. 发明授权

US07439454B2 Article transport apparatus having trough and reciprocating movement mechanism, and combination weighing apparatus provided therewith 失效
标题翻译：具有槽和往复运动机构的物品输送装置以及与其配合的组合计量装置
公开(公告)号：US07439454B2
公开(公告)日：2008-10-21
申请号：US10561388
申请日：2005-03-11
申请人： Toshiyuki Komatsu , Yukio Wakasa
发明人： Toshiyuki Komatsu , Yukio Wakasa
IPC分类号： B65G27/08 , G01G19/387
CPC分类号： B65G27/08
摘要： A transport apparatus that enables a trough to be easily removed in one step, and a combination weighing apparatus provided with the same are provided. The transport apparatus includes a trough and a reciprocating movement mechanism, and is configured to convey an article placed in the trough in a predetermined direction. The reciprocating movement mechanism includes a motor box, and a support member. The trough has one of a protruding part and a depressed part, while the support member had the other of the protruding part and the depressed part. The motor is configured to move the trough via the support member along the conveyance direction such that the trough moves faster in a direction opposite the conveyance direction than in the conveyance direction. The protruding part is removably connected to the depressed part.
摘要翻译：提供一种能够在一个步骤中容易地移除槽的输送装置，以及具有该槽的组合称重装置。输送装置包括槽和往复运动机构，并且构造成沿预定方向输送放置在槽中的物品。往复运动机构包括电动机箱和支撑构件。槽具有突出部和凹部中的一个，而支撑构件具有突出部和凹部中的另一个。马达构造成沿着输送方向经由支撑构件移动槽，使得槽沿与输送方向相反的方向移动得更快。突出部分可拆卸地连接到凹陷部分。

2. 发明申请

US20070095579A1 Transport apparatus and combination weighing apparatus provided therewith 失效
标题翻译：运输装置和组合称重装置
公开(公告)号：US20070095579A1
公开(公告)日：2007-05-03
申请号：US10561388
申请日：2005-03-11
申请人： Toshiyuki Komatsu , Yukio Wakasa
发明人： Toshiyuki Komatsu , Yukio Wakasa
IPC分类号： G01G21/00
CPC分类号： B65G27/08
摘要： In order to provide a transport apparatus that enables a trough to be easily removed in one step, and a combination weighing apparatus provided with the same, a transport apparatus (10) is a transport apparatus including a trough (11) and a reciprocating movement mechanism (20), and is configured to convey an article placed in the trough (11) in a predetermined direction. The reciprocating movement mechanism (20) includes a motor box (12), a parallel link (13), and a linking member (16). The parallel link (13) that also functions as a support member includes a first link (13a) and a second link (13b) which respectively have a first depressed part (15a) and a second depressed part (15b) formed on one end part thereof. The first depressed part (15a) and the second depressed part (15b) support protruding parts (11a, 11b) protruding from the trough (11).
摘要翻译：为了提供能够在一个步骤中容易地移除槽的输送装置和具有该输送装置的组合计量装置，输送装置（10）是包括槽（11）和往复运动机构（20），并且被构造成沿预定方向输送放置在所述槽（11）中的物品。往复运动机构（20）包括马达箱（12），平行连杆（13）和连接件（16）。也用作支撑构件的平行连杆（13）包括分别具有形成有第一凹部（15a）和第二凹部（15b）的第一连杆（13a）和第二连杆（13b）在其一端部分。第一凹部（15a）和第二凹部（15b）支撑从槽（11）突出的突出部（11a，11b）。

3. 发明授权

US6025115A Processing method for etching a substrate 失效
标题翻译：蚀刻基板的加工方法
公开(公告)号：US6025115A
公开(公告)日：2000-02-15
申请号：US429288
申请日：1995-04-25
申请人： Toshiyuki Komatsu , Yasue Sato , Shin-Ichi Kawate
发明人： Toshiyuki Komatsu , Yasue Sato , Shin-Ichi Kawate
IPC分类号： C23C16/04 , G03F1/00 , G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26 , G03F7/36 , G03F7/38 , H01L21/02 , H01L21/033 , H01L21/285 , H01L21/308 , H01L21/311 , H01L21/316 , H01L21/32 , H01L21/321 , H01L21/3213
CPC分类号： H01L21/02071 , C23C16/047 , G03F1/68 , G03F7/2002 , G03F7/201 , G03F7/2022 , G03F7/2043 , G03F7/2053 , G03F7/265 , G03F7/36 , G03F7/38 , G03F7/7005 , G03F7/70841 , G03F7/70866 , G03F7/70875 , G03F7/70991 , H01L21/033 , H01L21/0332 , H01L21/0337 , H01L21/28556 , H01L21/28562 , H01L21/3086 , H01L21/31116 , H01L21/31144 , H01L21/31662 , H01L21/31683 , H01L21/32 , H01L21/321 , H01L21/32139 , G03F7/00 , G03F7/0035 , G03F7/0042
摘要： A processing method for etching a substrate is described. This method includes subjecting a surface of a substrate to be processed to selective irradiation with a light in a gas atmosphere to form a surface-modified layer. The substrate surface with the surface-modified layer is then annealed to stabilize and make the surface-modified layer more etch resistant. Both the stabilized surface-modified layer and a non-modified portion of the substrate are then subjected to dry etching, thereby utilizing the higher resistance to dry etching of the stabilized surface-modified layer compared to the non-modified portion to selectively etch the non-modified portion to a desired depth.
摘要翻译：对基板的蚀刻处理方法进行说明。该方法包括使待处理的基板的表面经受气体气氛中的光的选择性照射，以形成表面改性层。然后将具有表面改性层的衬底表面退火以稳定并使表面改性层更耐蚀刻。然后将稳定化的表面改性层和基底的未改性部分进行干蚀刻，从而与未改性部分相比，利用较稳定的表面改性层的干蚀刻的较高电阻以选择性地蚀刻非 - 改变的部分到期望的深度。

4. 发明授权

US5863706A Processing method for patterning a film 失效
标题翻译：图案化薄膜的加工方法
公开(公告)号：US5863706A
公开(公告)日：1999-01-26
申请号：US429287
申请日：1995-04-25
申请人： Toshiyuki Komatsu , Yasue Sato , Shin-Ichi Kawate
发明人： Toshiyuki Komatsu , Yasue Sato , Shin-Ichi Kawate
IPC分类号： C23C16/04 , G03F1/00 , G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26 , G03F7/36 , G03F7/38 , H01L21/02 , H01L21/033 , H01L21/285 , H01L21/308 , H01L21/311 , H01L21/316 , H01L21/32 , H01L21/321 , H01L21/3213
CPC分类号： H01L21/02071 , C23C16/047 , G03F1/68 , G03F7/2002 , G03F7/201 , G03F7/2022 , G03F7/2043 , G03F7/2053 , G03F7/265 , G03F7/36 , G03F7/38 , G03F7/7005 , G03F7/70841 , G03F7/70866 , G03F7/70875 , G03F7/70991 , H01L21/033 , H01L21/0332 , H01L21/0337 , H01L21/28556 , H01L21/28562 , H01L21/3086 , H01L21/31116 , H01L21/31144 , H01L21/31662 , H01L21/31683 , H01L21/32 , H01L21/321 , H01L21/32139 , G03F7/00 , G03F7/0035 , G03F7/0042
摘要： A processing method is described which has a first step of depositing on a substrate a specimen film which may be any one of a semiconductor, a metal and a insulator.In a second step, the surface of the specimen film deposited in the first step, is irradiated with an ion beam to produce a physical damage on the surface, next, in a third step, the damaged specimen film surface is selectively irradiated with the light to partially cause a photochemical reaction so that a mask pattern, which depends on the desired device structure, is formed on the film surface. Finally, in a fourth step, photoetching is performed using the mask pattern formed in the third step as a shielding member.
摘要翻译：描述了一种处理方法，其具有在基板上沉积可以是半导体，金属和绝缘体中的任何一个的试样膜的第一步骤。在第二步骤中，在第一步骤中沉积的样品膜的表面用离子束照射以在表面上产生物理损伤，接下来，在第三步骤中，损伤的样品膜表面被选择性地照射光以部分地引起光化学反应，使得在膜表面上形成取决于期望的器件结构的掩模图案。最后，在第四步骤中，使用在第三步骤中形成的掩模图案作为屏蔽部件进行光刻。

5. 发明授权

US5714306A Processing method and apparatus 失效
公开(公告)号：US5714306A
公开(公告)日：1998-02-03
申请号：US428431
申请日：1995-04-25
申请人： Toshiyuki Komatsu , Yasue Sato , Shin-Ichi Kawate
发明人： Toshiyuki Komatsu , Yasue Sato , Shin-Ichi Kawate
IPC分类号： C23C16/04 , G03F1/68 , G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26 , G03F7/36 , G03F7/38 , H01L21/02 , H01L21/033 , H01L21/285 , H01L21/308 , H01L21/311 , H01L21/316 , H01L21/32 , H01L21/3213
CPC分类号： G03F1/68 , C23C16/047 , G03F7/2002 , G03F7/201 , G03F7/2022 , G03F7/2043 , G03F7/2053 , G03F7/265 , G03F7/36 , G03F7/38 , G03F7/7005 , G03F7/70841 , G03F7/70866 , G03F7/70875 , G03F7/70991 , H01L21/02071 , H01L21/033 , H01L21/0332 , H01L21/0337 , H01L21/28556 , H01L21/28562 , H01L21/3086 , H01L21/31116 , H01L21/31144 , H01L21/31662 , H01L21/31683 , H01L21/32 , H01L21/32139 , G03F7/00 , G03F7/0035 , G03F7/0042
摘要： A processing method comprises: a first step of depositing on a substrate which is a specimen a film of any one of a semiconductor, a metal and an insulator; a second step of subjecting the surface of the film deposited in the first step, to irradiation with a beam having a given energy to produce a physical damage on the surface; a third step of subjecting the film surface on which the physical damage is produced in the second step, to selective irradiation with light to partially cause a photochemical reaction so that a mask pattern depending on the desired device structure is formed on the film surface; and a fourth step of carrying out photoetching using as a shielding member the mask pattern formed in the third step.

6. 发明授权

US5576060A CVD process of forming hydrogenated a-Si films 失效
标题翻译：形成氢化a-Si膜的CVD工艺
公开(公告)号：US5576060A
公开(公告)日：1996-11-19
申请号：US487561
申请日：1995-06-07
申请人： Yutaka Hirai , Toshiyuki Komatsu , Katsumi Nakagawa
发明人： Yutaka Hirai , Toshiyuki Komatsu , Katsumi Nakagawa
IPC分类号： C23C14/00 , C23C14/16 , C23C16/24 , C23C16/44 , C23C16/455 , C23C16/507 , C23C16/509 , G03G5/082 , H01L31/09 , H01L31/20 , C23C16/00 , B05D3/06
CPC分类号： C23C14/16 , C23C14/0036 , C23C14/0057 , C23C16/24 , C23C16/45523 , C23C16/507 , C23C16/509 , G03G5/08221 , G03G5/08228 , G03G5/08242 , G03G5/08278 , H01L31/095 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A CVD process of forming a hydrogenated amorphous silicon film comprising not more than 40 atomic percent of hydrogen atoms is disclosed, which comprises introducing a silicon-containing gas and a gas containing impurity for controlling conductivity of said film into a film-forming space, wherein the concentration of the gas containing the impurity is controlled during film formation to vary the content of the impurity in the thickness direction of the amorphous silicon film.
摘要翻译：公开了形成不超过40原子％氢原子的氢化非晶硅膜的CVD工艺，其包括将含硅气体和含有杂质的气体导入到成膜空间中，其中所述杂质用于控制所述膜的导电性，其中在成膜期间控制含有杂质的气体的浓度以改变非晶硅膜的厚度方向上杂质的含量。

7. 发明授权

US4830946A CVD process for forming an image forming member for electrophotography 失效
标题翻译：用于形成电子照相用图像形成部件的CVD工艺
公开(公告)号：US4830946A
公开(公告)日：1989-05-16
申请号：US198582
申请日：1988-05-16
申请人： Toshiyuki Komatsu , Yutaka Hirai , Katsumi Nakagawa , Tadaji Fukuda
发明人： Toshiyuki Komatsu , Yutaka Hirai , Katsumi Nakagawa , Tadaji Fukuda
IPC分类号： G03G5/082
CPC分类号： G03G5/08235 , G03G5/08221 , G03G5/08292
摘要： An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.
摘要翻译：用于电子照相的图像形成部件具有包含由硅和/或锗作为基体的氢化非晶半导体和基质中所含的至少一种化学改性剂如碳，氮和氧的光电导层。

8. 发明授权

US4766477A Semiconductor device including a semiconductor layer having a polycrystalline silicon film with selected atomic constituency 失效
标题翻译：半导体器件包括具有选定的原子选区的多晶硅膜的半导体层
公开(公告)号：US4766477A
公开(公告)日：1988-08-23
申请号：US885336
申请日：1986-07-11
申请人： Katsumi Nakagawa , Toshiyuki Komatsu , Yoshiyuki Osada , Satoshi Omata , Yutaka Hirai , Takashi Nakagiri
发明人： Katsumi Nakagawa , Toshiyuki Komatsu , Yoshiyuki Osada , Satoshi Omata , Yutaka Hirai , Takashi Nakagiri
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/203 , H01L21/205 , H01L27/12 , H01L29/04 , H01L29/167 , H01L29/78 , H01L29/786 , H01L31/0368
CPC分类号： H01L31/03682 , H01L29/04 , H01L29/167 , H01L29/78 , H01L29/78675 , Y02E10/546 , Y10S148/122
摘要： A semiconductor device mainly comprises a semiconductor layer of a polycrystalline silicon film containing at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen as a constituent.
摘要翻译：半导体器件主要包括含有选自由碳，硫，氮和氧组成的组中的至少一个原子的多晶硅膜的半导体层。

9. 发明授权

US4763189A Color image sensor with three line sensors on different layers separated by electrically-insulating layers 失效
标题翻译：彩色图像传感器，在由绝缘层分隔的不同层上的三线传感器
公开(公告)号：US4763189A
公开(公告)日：1988-08-09
申请号：US28052
申请日：1987-03-19
申请人： Toshiyuki Komatsu , Masaki Fukaya , Tatsumi Shoji , Masaru Kamio , Nobuyuki Sekimura , Katsumi Nakagawa , Hirofumi Iwamoto , Shinichi Seitoh
发明人： Toshiyuki Komatsu , Masaki Fukaya , Tatsumi Shoji , Masaru Kamio , Nobuyuki Sekimura , Katsumi Nakagawa , Hirofumi Iwamoto , Shinichi Seitoh
IPC分类号： G03F7/00 , H01L27/146 , H04N1/48 , H04N1/46 , H01L27/14 , H01L31/00 , H04N1/028
CPC分类号： H01L27/14667 , G03F7/0007 , H04N1/486
摘要： A line sensor for color reading comprises a plurality of line sensors, each having photosensors arranged one-dimensionally, for the number of the color signals to be separated arranged in parallel with each other on one and the same substrate; and a color filter for color signal separation directly disposed on the light-receiving portion of each of said line sensors. The parallel line sensors may be disposed so as to be non-coplanar, e.g., by provision of insulating layers at least on wiring sections of the first and second line sensors, the second and third line sensors being disposed on the first and second insulating layers, respectively.
摘要翻译：用于彩色读取的线传感器包括多个线传感器，每个线传感器具有一维排列的光电传感器，用于在同一基板上彼此并联布置的待分离的颜色信号的数量; 以及用于颜色信号分离的滤色器，其直接设置在每个所述线传感器的光接收部分上。平行线传感器可以被布置为非共面的，例如至少在第一和第二线传感器的布线部分上设置绝缘层，第二和第三线传感器设置在第一和第二绝缘层上，分别。

10. 发明授权

US4737428A Image forming process for electrophotography 失效
标题翻译：电子照像的图像形成工艺
公开(公告)号：US4737428A
公开(公告)日：1988-04-12
申请号：US77102
申请日：1987-07-23
申请人： Eiichi Inoue , Isamu Shimizu , Toshiyuki Komatsu
发明人： Eiichi Inoue , Isamu Shimizu , Toshiyuki Komatsu
IPC分类号： G03G5/08 , G03G5/04 , G03G5/043 , G03G5/082 , H01L31/08 , G03G13/048
CPC分类号： G03G5/08221 , G03G5/0433 , G03G5/0436 , G03G5/082
摘要： An image-forming member for electrophotography comprises a photoconductive layer including as constituting layers, a hydrogenated amorphous silicon layer and an amorphous inorganic semiconductor layer. The amorphous inorganic semiconductor layer is laminated on the hydrogenated amorphous silicon layer to thereby provide a heterojunction.
摘要翻译：用于电子照相术的图像形成部件包括作为构成层的光电导层，氢化非晶硅层和无定形无机半导体层。无定形无机半导体层层压在氢化非晶硅层上，从而提供异质结。

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