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1. 发明授权

US06291840B1 GaN related compound semiconductor light-emitting device 失效
标题翻译： GaN相关化合物半导体发光器件
公开(公告)号：US06291840B1
公开(公告)日：2001-09-18
申请号：US08979346
申请日：1997-11-26
申请人： Toshiya Uemura , Naoki Shibata , Shizuyo Noiri , Masanori Murakami , Yasuo Koide , Jun Ito
发明人： Toshiya Uemura , Naoki Shibata , Shizuyo Noiri , Masanori Murakami , Yasuo Koide , Jun Ito
IPC分类号： H01L3300
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/32
摘要： A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting patten which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.
摘要翻译：通过气相沉积在p +层上形成包含钴（Co）的层，并且在其上形成包含金（Au）的层。通过热处理将两层合金化以形成透光电极。因此，透光电极具有降低的接触电阻和改善的透光性，并且给出长时间稳定的发光图案。此外，由于钴（Co）是具有大功函数的元素，因此获得令人满意的欧姆特性。

2. 发明授权

US08471288B2 Group III nitride semiconductor light-emitting device including an auxiliary electrode in contact with a back surface of an n-type layer 有权
标题翻译： III族氮化物半导体发光器件，其包括与n型层的背面接触的辅助电极
公开(公告)号：US08471288B2
公开(公告)日：2013-06-25
申请号：US12923318
申请日：2010-09-14
申请人： Toshiya Uemura , Jun Ito
发明人： Toshiya Uemura , Jun Ito
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： A Group III nitride semiconductor light-emitting device includes a support, a p-electrode provided on the support, a p-type layer including a Group III nitride semiconductor and provided on the p-electrode, an active layer including a Group III nitride semiconductor and provided on the p-type layer, an n-type layer including a Group III nitride semiconductor and provided on the active layer, an n-electrode which is connected to the n-type layer, a first trench having a depth extending from a back surface of the p-type layer on a side of the p-electrode to reach the n-type layer, an auxiliary electrode which is in contact with a back surface of the n-type layer at a bottom of the first trench, but is not in contact with side walls of the first trench, and an insulating film which exhibits light permeability.
摘要翻译： III族氮化物半导体发光器件包括支撑体，设置在支撑体上的p电极，设置在p电极上的包含III族氮化物半导体的p型层，包括III族氮化物半导体的有源层并且在p型层上设置包括III族氮化物半导体并且设置在有源层上的n型层，连接到n型层的n电极，具有从在p型电极侧的p型层的背面到达n型层，辅助电极与第n沟槽的底部的n型层的背面接触，但是不与第一沟槽的侧壁接触，并且具有透光性的绝缘膜。

3. 发明授权

US08389304B2 Method for producing group III nitride semiconductor light-emitting device 失效
标题翻译： III族氮化物半导体发光元件的制造方法
公开(公告)号：US08389304B2
公开(公告)日：2013-03-05
申请号：US13067142
申请日：2011-05-11
申请人： Toshiya Uemura , Jun Ito
发明人： Toshiya Uemura , Jun Ito
IPC分类号： H01L21/00
CPC分类号： H01L33/24 , H01L21/0237 , H01L21/02381 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/02516 , H01L21/0254 , H01L21/02658 , H01L33/007 , H01L33/382
摘要： The present invention provides a method for producing a Group III nitride semiconductor light-emitting device, the device including a light-emitting layer which is formed so as to contour a stripe-pattern embossment and to have a uniform thickness. In the production method, firstly, a stripe-pattern embossment having a serrated cross section is formed on one surface of a substrate. Subsequently, on the surface of the substrate on the side of the stripe-pattern embossment having a serrated cross section, an n-type layer, a light-emitting layer, and a p-type layer are sequentially deposited through reduced-pressure MOCVD so as to contour the embossment. Thus, each of the layers is formed so as to contour the embossment, and to have a stripe pattern with a serrated cross section. In this MOCVD process, the direction of gas flow is parallel with the direction of the stripe of the embossment. Thus, the light-emitting layer has uniform thickness and composition in an in-plane direction.
摘要翻译：本发明提供了一种制造III族氮化物半导体发光器件的方法，该器件包括形成为使条状图案压花轮廓化并具有均匀厚度的发光层。在制造方法中，首先，在基板的一个面上形成具有锯齿形截面的条纹图案压花。随后，在具有锯齿状横截面的条纹图案压花侧的基板表面上，通过减压MOCVD依次沉积n型层，发光层和p型层，从而为了轮廓浮雕。因此，每个层被形成为使得凸起轮廓化，并且具有锯齿状横截面的条纹图案。在该MOCVD工艺中，气流的方向与压花条的方向平行。因此，发光层在面内方向上具有均匀的厚度和组成。

4. 发明申请

US20110062488A1 Group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光器件
公开(公告)号：US20110062488A1
公开(公告)日：2011-03-17
申请号：US12923318
申请日：2010-09-14
申请人： Toshiya Uemura , Jun Ito
发明人： Toshiya Uemura , Jun Ito
IPC分类号： H01L33/40
CPC分类号： H01L33/38 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： A Group III nitride semiconductor light-emitting device includes an electrically conductive support; a p-electrode provided on the support; a p-type layer, an active layer, and an n-type layer, which are formed of a Group III nitride semiconductor and are sequentially provided on the p-electrode; an n-electrode which is connected to the n-type layer; a first trench extending from the surface of the p-type layer on the p-electrode's side to reach the n-type layer; an auxiliary electrode which is in contact with the surface of the n-type layer serving as the bottom of the first trench, but is not in contact with the side walls of the first trench; and an insulating film which exhibits light permeability and covers the auxiliary electrode and the bottom and side walls of the first trench.
摘要翻译： III族氮化物半导体发光器件包括导电支撑体; 设置在支撑体上的p电极; p型层，有源层和n型层，其由III族氮化物半导体形成，并且依次设置在p电极上; 与n型层连接的n电极; 从p型层的p电极侧的表面延伸到n型层的第一沟槽; 与作为第一沟槽的底部的n型层的表面接触但不与第一沟槽的侧壁接触的辅助电极; 以及表现出透光性并覆盖第一沟槽的辅助电极和底壁和侧壁的绝缘膜。

5. 发明授权

US06573117B2 GaN related compound semiconductor and process for producing the same 有权
公开(公告)号：US06573117B2
公开(公告)日：2003-06-03
申请号：US10053570
申请日：2002-01-24
申请人： Toshiya Uemura , Naoki Shibata , Shizuyo Noiri , Masanori Murakami , Yasuo Koide , Jun Ito
发明人： Toshiya Uemura , Naoki Shibata , Shizuyo Noiri , Masanori Murakami , Yasuo Koide , Jun Ito
IPC分类号： H01L2100
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/32
摘要： A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.

6. 发明授权

US06500689B2 Process for producing GaN related compound semiconductor 失效
标题翻译：生产GaN相关化合物半导体的方法
公开(公告)号：US06500689B2
公开(公告)日：2002-12-31
申请号：US09819622
申请日：2001-03-29
申请人： Toshiya Uemura , Naoki Shibata , Shizuyo Noiri , Masanori Murakami , Yasuo Koide , Jun Ito
发明人： Toshiya Uemura , Naoki Shibata , Shizuyo Noiri , Masanori Murakami , Yasuo Koide , Jun Ito
IPC分类号： H01L2128
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/32
摘要： A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.
摘要翻译：通过气相沉积在p +层上形成包含钴（Co）的层，并且在其上形成包含金（Au）的层。通过热处理将两层合金化以形成透光电极。因此，透光电极具有降低的接触电阻和改善的透光性，并且给出了长时间稳定的发光图案。此外，由于钴（Co）是具有大功函数的元素，因此获得令人满意的欧姆特性。

7. 发明申请

US20110281381A1 Method for producing group III nitride semiconductor light-emitting device 失效
标题翻译： III族氮化物半导体发光元件的制造方法
公开(公告)号：US20110281381A1
公开(公告)日：2011-11-17
申请号：US13067142
申请日：2011-05-11
申请人： Toshiya Uemura , Jun Ito
发明人： Toshiya Uemura , Jun Ito
IPC分类号： H01L33/22
CPC分类号： H01L33/24 , H01L21/0237 , H01L21/02381 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/02516 , H01L21/0254 , H01L21/02658 , H01L33/007 , H01L33/382
摘要： The present invention provides a method for producing a Group III nitride semiconductor light-emitting device, the device including a light-emitting layer which is formed so as to contour a stripe-pattern embossment and to have a uniform thickness. In the production method, firstly, a stripe-pattern embossment having a serrated cross section is formed on one surface of a substrate. Subsequently, on the surface of the substrate on the side of the stripe-pattern embossment having a serrated cross section, an n-type layer, a light-emitting layer, and a p-type layer are sequentially deposited through reduced-pressure MOCVD so as to contour the embossment. Thus, each of the layers is formed so as to contour the embossment, and to have a stripe pattern with a serrated cross section. In this MOCVD process, the direction of gas flow is parallel with the direction of the stripe of the embossment. Thus, the light-emitting layer has uniform thickness and composition in an in-plane direction.
摘要翻译：本发明提供了一种制造III族氮化物半导体发光器件的方法，该器件包括形成为使条状图案压花轮廓化并具有均匀厚度的发光层。在制造方法中，首先，在基板的一个面上形成具有锯齿形截面的条纹图案压花。随后，在具有锯齿状横截面的条纹图案压花侧的基板表面上，通过减压MOCVD依次沉积n型层，发光层和p型层，从而为了轮廓浮雕。因此，每个层被形成为使得凸起轮廓化，并且具有锯齿状横截面的条纹图案。在该MOCVD工艺中，气流的方向与压花条的方向平行。因此，发光层在面内方向上具有均匀的厚度和组成。

8. 发明授权

US07291868B2 Light-emitting semiconductor device and a method of manufacturing it 有权
标题翻译：发光半导体装置及其制造方法
公开(公告)号：US07291868B2
公开(公告)日：2007-11-06
申请号：US10564416
申请日：2004-08-20
申请人： Masanobu Ando , Masahito Nakai , Toshiya Uemura , Masaaki Nakayama
发明人： Masanobu Ando , Masahito Nakai , Toshiya Uemura , Masaaki Nakayama
IPC分类号： H01L29/24
CPC分类号： B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/32 , H01S5/183 , H01S5/3086 , H01S5/3409 , H01S5/34333 , H01S2304/04
摘要： In layer structure 20 of a semiconductor laser of a surface emitting type, 21 and 24 represent an n-type contact layer made of n-type GaN and a p-layer made of p-type AlGaN, respectively. In the laser, an n-type DBR layer 22 made of n-type InGaN and a DBR layer 25 made of dielectric are formed on and below a InGaN active layer 23, respectively, each of which forms a reflection surface vertical to the z axis. By forming a reflection surface vertical to the z axis at each of on and above the active layer 23, a resonator is obtained. Here optical distance between two reflection facets are arranged to an integral multiple of half a oscillation wavelength. Consequently, the present invention enables to produce a semiconductor laser of a surface emitting type easier by far compared with a conventional invention.
摘要翻译：在表面发射型半导体激光器的层结构20中，21和24分别表示由n型GaN制成的n型接触层和由p型AlGaN制成的p层。在激光器中，分别在InGaN有源层23的下方形成由n型InGaN构成的n型DBR层22和由电介质形成的DBR层25，各层形成与z轴垂直的反射面。通过在有源层23的上方形成与z轴垂直的反射面，得到共振器。这里，两个反射面之间的光学距离被设置为振荡波长的一半的整数倍。因此，与现有技术相比，本发明能够制造出比现有技术更容易的表面发射型半导体激光器。

9. 发明申请

US20070228409A1 Light emitting element, light emitting device using the light emitting element and method for manufacturing light emitting element 有权
标题翻译：发光元件，使用该发光元件的发光元件及其制造方法
公开(公告)号：US20070228409A1
公开(公告)日：2007-10-04
申请号：US11730687
申请日：2007-04-03
申请人： Toshiya Uemura
发明人： Toshiya Uemura
IPC分类号： H01L33/00 , H01L29/24
CPC分类号： H01L33/22 , H01L33/20 , H01L33/52 , H01L2224/48091 , H01L2924/01004 , H01L2924/01012 , H01L2924/0102 , H01L2924/01025 , H01L2924/01078 , H01L2924/01079 , H01L2924/00014
摘要： To provide a light emitting element that can extract substantially all the light emitted from a luminous layer structure to the outside, a GaN substrate and a luminous layer structure are formed by growing III nitride compound semiconductor on a sapphire substrate that is a growth substrate. Thereafter, the sapphire substrate is lifted off and minute irregularities are formed on the exposed GaN substrate. The pitch of irregularities is shorter than the wavelength of light emitted from the luminous layer structure.
摘要翻译：为了提供可将基本上从发光层结构发出的所有光提取到外部的发光元件，通过在作为生长衬底的蓝宝石衬底上生长III族氮化物化合物半导体来形成GaN衬底和发光层结构。此后，蓝宝石衬底被剥离，并且在暴露的GaN衬底上形成微小的凹凸。不规则的间距比从发光层结构发出的光的波长短。

10. 发明授权

US07138662B2 Light-emitting device 失效
标题翻译：发光装置
公开(公告)号：US07138662B2
公开(公告)日：2006-11-21
申请号：US10664081
申请日：2003-09-17
申请人： Toshiya Uemura
发明人： Toshiya Uemura
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/505 , H01L33/508 , H01L33/60 , H01L2224/48091 , H01L2224/48247 , H01L2224/49107 , H01L2924/01004 , H01L2924/01012 , H01L2924/0102 , H01L2924/01025 , H01L2924/01029 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/12041 , H01L2924/3025 , H01L2924/00014
摘要： A light-emitting device including: a semiconductor light-emitting element using a substrate surface as a light-extracting surface; and a mount frame on which the semiconductor light-emitting element is mounted and which has a reflecting portion for reflecting light emitted from the substrate surface; wherein the mount frame has a swollen portion formed so that part of the substrate surface of the light-emitting element is supported by the swollen portion.
摘要翻译：一种发光装置，包括：使用基板表面作为光提取表面的半导体发光元件; 以及安装框架，其上安装有半导体发光元件，并且具有用于反射从基板表面发射的光的反射部分; 其中，所述安装框架具有形成为使得所述发光元件的所述基板表面的一部分由所述溶胀部支撑的隆起部。

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