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1. 发明授权

US4769822A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4769822A
公开(公告)日：1988-09-06
申请号：US910530
申请日：1986-09-23
申请人： Takahiro Suyama , Kohsei Takahashi , Saburo Yamamoto , Toshiro Hayakawa , Masafumi Kondo
发明人： Takahiro Suyama , Kohsei Takahashi , Saburo Yamamoto , Toshiro Hayakawa , Masafumi Kondo
IPC分类号： H01S5/00 , H01S5/12 , H01S5/20 , H01S5/223 , H01S5/34 , H01S3/19
CPC分类号： H01S5/12 , H01S5/1237 , H01S5/2059 , H01S5/2231 , H01S5/3428
摘要： A semiconductor laser device comprising a laser oscillation-operating area containing a first cladding layer, an active layer, an optical guiding layer and a second cladding layer in that order, wherein a striped impurity-diffusion region is formed into said second cladding layer from one facet to the other facet and a plurality of narrow strips of GaAs with a spaced pitch are formed in parallel with both facets in the region, except for the region corresponding to said striped diffusion region, which is positioned at the interface between the optical guiding layer and the second cladding layer.
摘要翻译：一种半导体激光器件，包括依次包含第一包层，有源层，光导层和第二包层的激光振荡操作区域，其中从一个第一包层形成带状杂质扩散区域除了对应于所述条纹扩散区域的区域之外，与该区域中的两个小平面平行地形成具有间隔的间距的多个窄带的GaAs的另一个面和多个窄带的GaAs，所述区域位于光引导层和第二覆层。

2. 发明授权

US4841533A Semiconductor laser device having a graded index waveguide 失效
标题翻译：具有渐变折射率波导的半导体激光器件
公开(公告)号：US4841533A
公开(公告)日：1989-06-20
申请号：US920585
申请日：1986-10-17
申请人： Toshiro Hayakawa , Takahiro Suyama , Masafumi Kondo , Kohsei Takahashi , Saburo Yamamoto
发明人： Toshiro Hayakawa , Takahiro Suyama , Masafumi Kondo , Kohsei Takahashi , Saburo Yamamoto
IPC分类号： H01L21/203 , H01S5/00 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/34313 , H01S5/3432
摘要： A semiconductor laser device containing a laser oscillation-operating area comprising a superlatticed quantum well region which is composed of layers of GaAs alternating with layers of Al.sub.x Ga.sub.1-x As (0
摘要翻译：一种包含激光振荡操作区域的半导体激光器件，包括由Al x Ga 1-x As（0

3. 发明授权

US4745612A Separate confinement heterostructure semiconductor laser device 失效
标题翻译：分离限制异质结半导体激光器件
公开(公告)号：US4745612A
公开(公告)日：1988-05-17
申请号：US884554
申请日：1986-07-11
申请人： Toshiro Hayakawa , Takahiro Suyama , Kohsei Takahashi , Masafumi Kondo , Saburo Yamamoto
发明人： Toshiro Hayakawa , Takahiro Suyama , Kohsei Takahashi , Masafumi Kondo , Saburo Yamamoto
IPC分类号： H01S5/00 , H01S5/343 , H01S3/19
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/3432
摘要： The laser device has an Al.sub.x Ga.sub.1-x As (x.gtoreq.0.3) quantum well active region having a thickness of 200 angstroms or less. Al.sub.y Ga.sub.1-y As (y>x) carrier supplying layers sandwich the quantum well active region therebetween. An Al.sub.z Ga.sub.1-z As (z>y) cladding layer is disposed on each of the carrier supplying layers. Finally an Al.sub.w Ga.sub.1-w As (w>z) barrier layer is disposed between each of the carrier supplying layers and each of the cladding layers.
摘要翻译：激光器件具有厚度为200埃或更小的Al x Ga 1-x As（x> / = 0.3）量子阱有源区。 Al y Ga 1-y As（y> x）载流子供应层夹在其间的量子阱活性区域。在每个载体供给层上设置AlzGa1-zAs（z> y）包覆层。最后，在每个载流子供给层和每个包覆层之间设置AlwGa1-wAs（w> z）阻挡层。

4. 发明授权

US4860297A Quantum well semiconductor laser device 失效
标题翻译：量子阱半导体激光器件
公开(公告)号：US4860297A
公开(公告)日：1989-08-22
申请号：US81403
申请日：1987-08-04
申请人： Toshiro Hayakawa , Takahiro Suyama , Kohsei Takahashi , Masafumi Kondo , Saburo Yamamoto
发明人： Toshiro Hayakawa , Takahiro Suyama , Kohsei Takahashi , Masafumi Kondo , Saburo Yamamoto
IPC分类号： H01S5/00 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/34326
摘要： In a semiconductor laser device comprising In(Ga.sub.1-x Al.sub.x)P cladding layers and an active region which has one or more In(Ga.sub.1-y Al.sub.y)P (y
摘要翻译：在包括In（Ga1-xAlx）P包覆层和具有一个或多个In（Ga1-yAly）P（y

5. 发明授权

US4787089A Quantum well semiconductor laser device 失效
标题翻译：量子阱半导体激光器件
公开(公告)号：US4787089A
公开(公告)日：1988-11-22
申请号：US12702
申请日：1987-02-09
申请人： Toshiro Hayakawa , Kohsei Takahashi , Takahiro Suyama , Masafumi Kondo , Saburo Yamamoto
发明人： Toshiro Hayakawa , Kohsei Takahashi , Takahiro Suyama , Masafumi Kondo , Saburo Yamamoto
IPC分类号： H01S5/00 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34313 , H01S5/3432
摘要： A semiconductor laser device comprising a single or a plurality of quantum well regions formed by a superlatticed structure which is composed of alternate layers consisting of thin GaAs layers and thin Al.sub.x Ga.sub.1-x As (0
摘要翻译：一种半导体激光器件，包括由超薄结构形成的单个或多个量子阱区域，所述超晶格结构由由薄GaAs层和薄Al x Ga 1-x As（0

6. 发明授权

US4750183A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4750183A
公开(公告)日：1988-06-07
申请号：US15880
申请日：1987-02-18
申请人： Kohsei Takahashi , Toshiro Hayakawa , Takahiro Suyama , Masafumi Kondo , Saburo Yamamoto
发明人： Kohsei Takahashi , Toshiro Hayakawa , Takahiro Suyama , Masafumi Kondo , Saburo Yamamoto
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/34313 , H01S5/2004 , H01S5/22 , H01S5/3409 , H01S5/3432
摘要： An active layer for laser oscillation and optical guiding layers for guiding laser light sandwiching the active layer therebetween are included in the device. At least one of the optical guiding layers is formed by a superlattice, the optical refractive index of which is lower than that of the active layer. Further, the optical refractive index is gradually decreased in the direction from the portion of the optical guiding layer adjacent to the active layer, to the outside of the optical guiding layer.
摘要翻译：用于激光振荡的有源层和用于引导夹在其间的有源层的激光的光导层被包括在该装置中。至少一个光导层由超晶格形成，其光折射率低于有源层的光学折射率。此外，光学折射率在从与有源层相邻的光导层的部分到光导层外侧的方向上逐渐减小。

7. 发明授权

US4835783A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4835783A
公开(公告)日：1989-05-30
申请号：US41483
申请日：1987-04-23
申请人： Takahiro Suyama , Toshiro Hayakawa , Kohsei Takahashi , Masafumi Kondo , Saburo Yamamoto
发明人： Takahiro Suyama , Toshiro Hayakawa , Kohsei Takahashi , Masafumi Kondo , Saburo Yamamoto
IPC分类号： H01S5/00 , H01S5/22 , H01S5/34 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/4031 , H01S5/2202 , H01S5/3428 , H01S5/3432
摘要： A semiconductor device is formed by sequentially forming a first clad layer, active layer, second clad layer, and cap layer from, for example, an AlGaAs layer with an AlAs mixing ratio of .gtoreq.0.4, on a substrate made of GaAs or the like by MBE, MOCVD or another high precision growth process. Then AlGaAs layer is selectively removed only in the vicinity of formed ridges, and in this part, grooves on two stripes are formed from the cap layer surface, leaving the second clad layer with an intact thickness of, for example, only 3000 .ANG.. An insulation layer made of, for example, SiN is then formed in the groove area and the AlGaAs layer region, thereby creating a current stripe structure, in which only two grooves provide for current passages, that is, the light-emitting regions. In this structure, the thickness of the mesa pattern (ridge part) between the two grooves may be a minimum limit and the processing precision may be improved, while by properly selecting the thickness of the AlGaAs layer, a sufficiently large distance may be set between the mount surface and the active layer, so that the problem of solder climbing-up along the device end surface may be prevented. When the AlAs mixing ratio is controlled at 0.4 in the AlGaAs layer, it is possible to easily remove portions thereof selectively, by using hydrogen fluoride.
摘要翻译：半导体器件通过从例如AlAs混合比为> / = 0.4的AlGaAs层顺序地形成第一覆盖层，有源层，第二覆盖层和覆盖层而形成，所述AlGaAs层在由GaAs制成的衬底上或像MBE，MOCVD或另一个高精度增长过程。然后，仅在形成的脊的附近选择性地除去AlGaAs层，并且在该部分中，由盖层表面形成两个条纹上的槽，留下第二覆层的完整厚度例如仅为3000安。然后在沟槽区域和AlGaAs层区域中形成例如由SiN制成的绝缘层，从而产生电流条纹结构，其中只有两个沟槽提供电流通路，即发光区域。在这种结构中，两个槽之间的台面图案（脊部）的厚度可以是最小限度，并且可以提高加工精度，而通过适当地选择AlGaAs层的厚度，可以设置足够大的距离安装表面和有源层，从而可以防止沿着器件端面向上爬焊的问题。当在AlGaAs层中AlAs混合比控制在0.4时，可以通过使用氟化氢来选择性地容易地去除它们的部分。

8. 发明授权

US4899349A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4899349A
公开(公告)日：1990-02-06
申请号：US285342
申请日：1988-12-14
申请人： Toshiro Hayakawa , Takahiro Suyama , Kohsei Takahashi , Masafumi Kondo , Saburo Yamamoto
发明人： Toshiro Hayakawa , Takahiro Suyama , Kohsei Takahashi , Masafumi Kondo , Saburo Yamamoto
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/2081 , H01S5/209 , H01S5/32316
摘要： A double-heterostructure multilayered crystal structure in a semiconductor laser device contains an active layer for laser oscillation. A striped etching-protective thin layer is formed on the double-heterostructure multilayered crystal. A striped-mesa multilayered crystal is formed on the striped etching-protective thin layer. A burying layer is formed on the double-heterostructure multilayered crystal outside of both the striped thin layer and striped-mesa multilayered crystal. This provides refractive index distributions within the active layer corresponding to the inside and the outside of the striped-mesa multilayered crystal. Further, it provides a striped structure which functions as a current path composed of the striped-mesa multilayered crystal.
摘要翻译：半导体激光器件中的双异质结构多层晶体结构包含用于激光振荡的有源层。在双异质结构多层晶体上形成条纹蚀刻保护薄层。在条纹蚀刻保护薄层上形成条状台面多层晶体。在条纹薄层和条纹 - 台面多层晶体之外的双异质结构多层晶体上形成掩埋层。这提供了对应于条状台面多层晶体的内部和外部的有源层内的折射率分布。此外，它提供了条纹结构，其作为由条状台面多层晶体组成的电流路径。

9. 发明授权

US4807235A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4807235A
公开(公告)日：1989-02-21
申请号：US905516
申请日：1986-09-09
申请人： Takahiro Suyama , Kohsei Takahashi , Saburo Yamamoto , Toshiro Hayakawa , Masafumi Kondo
发明人： Takahiro Suyama , Kohsei Takahashi , Saburo Yamamoto , Toshiro Hayakawa , Masafumi Kondo
IPC分类号： H01S5/00 , H01S5/02 , H01S5/028 , H01S5/042 , H01S5/06 , H01S5/10 , H01S5/16 , H01S5/227 , H01S3/19
CPC分类号： H01S5/10 , H01S5/0422 , H01S5/164 , H01S5/0202 , H01S5/0281 , H01S5/0425 , H01S5/0602 , H01S5/2275
摘要： A semiconductor laser device comprising a multi-layered semiconductor crystal containing an active region for laser oscillation, wherein the extended portions of said active region which are adjacent to both sides of one facet having the width of a selected value of said device constitute light-absorbing regions by which light in a high-order transverse mode is absorbed to a greater extent than that in a fundamental transverse mode, thereby achieving laser oscillation in a stable fundamental transverse mode up to a high output power.
摘要翻译：一种半导体激光器件，包括含有用于激光振荡的有源区的多层半导体晶体，其中与所述器件的选定值的宽度相邻的一个面的两侧相邻的所述有源区的延伸部分构成吸光在高次横模中的光被吸收到比基本横向模式更大程度地吸收的区域，从而实现高达高输出功率的稳定的基本横模的激光振荡。

10. 发明授权

US4737959A Semiconductor laser array device 失效
标题翻译：半导体激光阵列器件
公开(公告)号：US4737959A
公开(公告)日：1988-04-12
申请号：US772789
申请日：1985-09-05
申请人： Takahiro Suyama , Toshiro Hayakawa , Kohsei Takahashi , Saburo Yamamoto
发明人： Takahiro Suyama , Toshiro Hayakawa , Kohsei Takahashi , Saburo Yamamoto
IPC分类号： H01S5/00 , H01S5/223 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4031 , H01S5/223
摘要： A semiconductor laser array device comprising a substrate having a plurality of adjacent striped channels on its surface, and a plurality of laser operation areas each of which contains a cladding layer, an active layer and another cladding layer which have been successively formed on the surface of said substrate by molecular beam epitaxy or metal organic chemical vapor deposition in such a manner that the surface of each of these layers becomes parallel to the surface of said substrate.
摘要翻译：一种半导体激光器阵列器件，包括在其表面上具有多个相邻条纹沟道的衬底，以及多个激光器操作区域，每个激光器操作区域包含已经依次形成在表面上的覆层，有源层和另一覆层所述衬底通过分子束外延或金属有机化学气相沉积，使得这些层中的每一层的表面平行于所述衬底的表面。

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