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1. 发明授权

US5894057A Charged beam drawing method 失效
标题翻译：充电光束绘图法
公开(公告)号：US5894057A
公开(公告)日：1999-04-13
申请号：US887842
申请日：1997-07-03
申请人： Toshio Yamaguchi , Kazuto Matsuki , Shuichi Tamamushi , Souji Koikari , Eiji Murakami , Shigehiro Hara
发明人： Toshio Yamaguchi , Kazuto Matsuki , Shuichi Tamamushi , Souji Koikari , Eiji Murakami , Shigehiro Hara
IPC分类号： H01J37/305 , G03F7/20 , H01J37/302 , H01L21/027 , H01L21/302 , G03F9/00 , G03C5/00
CPC分类号： H01J37/3026 , G03F7/2065 , H01J2237/31764 , H01J2237/31767 , Y10S430/143
摘要： The present invention provides a charged beam drawing method comprising a first step of setting a stripe field independent of drawing pattern definition data and of determining the drawing pattern definition data which belongs to the stripe field set, a second step of setting a sub-field independent of the drawing pattern definition data and of determining the drawing pattern definition data which belongs to the sub-field, among the drawing pattern definition data determined, a third step of drawing the drawing pattern definition data which belongs to the sub-field onto an object to be subjected to drawing, a fourth step of shifting a position of the stripe field by a first predetermined value, and of shifting a position of the sub-field by a second predetermined value, and a fifth step of repeating the first to fourth steps for at least two times.
摘要翻译：本发明提供了一种带电波束绘制方法，包括：第一步骤，设置与绘制图案定义数据无关的条带字段，并确定属于条带字段集的绘图模式定义数据;第二步，设置子场独立并且在确定的绘图模式定义数据中确定属于该子场的绘图模式定义数据，以及将属于子场的绘图模式定义数据绘制到一个对象上的第三步骤要进行绘制的第四步骤，将条纹域的位置移动第一预定值，并且将子场的位置移位第二预定值，第五步骤，重复第一至第四步骤至少两次。

2. 发明授权

US06319642B1 Electron beam exposure apparatus 有权
标题翻译：电子束曝光装置
公开(公告)号：US06319642B1
公开(公告)日：2001-11-20
申请号：US09275186
申请日：1999-03-23
申请人： Shigehiro Hara , Eiji Murakami , Hitoshi Higurashi , Toshio Yamaguchi , Kazuto Matsuki , Souji Koikari , Shuichi Tamamushi , Kazuyuki Okuzono
发明人： Shigehiro Hara , Eiji Murakami , Hitoshi Higurashi , Toshio Yamaguchi , Kazuto Matsuki , Souji Koikari , Shuichi Tamamushi , Kazuyuki Okuzono
IPC分类号： G03F900
CPC分类号： G03F7/704 , H01J37/3026 , H01J2237/3175
摘要： A pattern lithography system for lithographing a pattern with reference to a pattern data by deflecting an electron beam includes a controller, an extracting unit, a dividing unit, and an expansion unit. The controller analyzes the pattern data and determines stripes of the pattern to be successively lithographed. The extracting unit extracts parts of the pattern data corresponding to stripes of the pattern in response to commands from the controller and sends the data to the dividing unit. The dividing unit divides the part of the pattern data into a plurality of sub-patterns. The sub-patterns are sized smaller than a minimum deflection range of the electron beam. The expanding unit expands the sub-patterns in accordance with a command from the controller to produce stripe data for driving a lithographing unit to lithograph the stripe. Stripes may have at least one sub-pattern in common such that multiple lithography is performed.
摘要翻译：通过偏转电子束来参考图案数据对图案进行光刻的图案光刻系统包括控制器，提取单元，分割单元和扩展单元。控制器分析图案数据，并确定要连续刻蚀的图案的条纹。提取单元响应于来自控制器的命令提取对应于图案条纹的图案数据的部分，并将数据发送到分割单元。分割单元将图案数据的一部分划分成多个子图案。子图案的尺寸小于电子束的最小偏转范围。扩展单元根据来自控制器的命令扩展子图案，以产生用于驱动光刻单元以对该条纹进行光刻的条带数据。条纹可以具有共同的至少一个子图案，使得执行多次光刻。

3. 发明授权

US5760410A Electron beam lithography apparatus and method 失效
标题翻译：电子束光刻设备及方法
公开(公告)号：US5760410A
公开(公告)日：1998-06-02
申请号：US842508
申请日：1997-04-24
申请人： Kazuto Matsuki , Shuichi Tamamushi , Toshio Yamaguchi , Ryoichi Yoshikawa
发明人： Kazuto Matsuki , Shuichi Tamamushi , Toshio Yamaguchi , Ryoichi Yoshikawa
IPC分类号： G03F7/20 , H01J37/317 , H01L21/027 , H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31764 , H01J2237/31769
摘要： An electron beam lithography apparatus is provided for drawing a exposure pattern on a sample by dividing the exposure pattern into a plurality of pattern elements and individually directing the electron beam to the sample at the pattern element. The size of the pattern element is adjusted in accordance with a gradient of a spatial variation of a back scattering dose. By doing so, it is possible to suppress distortion at the exposure area of one shot and to suppress an uneven edge of an exposure area row. If the size of the pattern element is made uniformly smaller, the drawing throughput is markedly lowered. The sizes of the pattern element varies in accordance with the gradient of a spatial variation of the back scattering dose and it is, therefore, possible to suppress a fall in the drawing throughput.
摘要翻译：提供一种电子束光刻设备，用于通过将曝光图案分成多个图案元素并将电子束单独地引导到图案元件处的样品，来将样品上的曝光图案绘制。根据背散射剂量的空间变化的梯度来调整图案元素的尺寸。通过这样做，可以抑制一次曝光区域的变形并抑制曝光区域行的不均匀边缘。如果图案元件的尺寸均匀地变小，则绘图吞吐量显着降低。图案元素的尺寸根据背散射剂量的空间变化的梯度而变化，因此可以抑制绘图生成量的下降。

4. 发明授权

US5850083A Charged particle beam lithograph apparatus 失效
标题翻译：带电粒子光刻机
公开(公告)号：US5850083A
公开(公告)日：1998-12-15
申请号：US821303
申请日：1997-03-20
申请人： Souji Koikari , Shuichi Tamamushi , Shusuke Yoshitake , Munehiro Ogasawara
发明人： Souji Koikari , Shuichi Tamamushi , Shusuke Yoshitake , Munehiro Ogasawara
IPC分类号： H01L21/027 , H01J37/153 , H01J37/145
CPC分类号： H01J37/153 , H01J2237/3175
摘要： A charged particle beam lithograph apparatus of the present invention projects a charged particle beam onto a sample through a mask and lithographs a mask pattern on the sample through the movement of the charged particle beam. In order to focus the charged particle beam, the apparatus creates an electromagnetic field, from the magnetic lens, symmetric with respect to an optical axis of the charged particle beam. An aberration of the charged particle beam is created under the symmetric electromagnetic magnet. The aberration is compensated for under an electromagnetic field nonsymmetric with respect to the optical axis which is created by a deflection unit.
摘要翻译：本发明的带电粒子束光刻设备通过掩模将带电粒子束投射到样品上，并通过带电粒子束的运动对样品上的掩模图案进行平版印刷。为了聚焦带电粒子束，该装置从磁性透镜产生相对于带电粒子束的光轴对称的电磁场。在对称电磁磁铁下产生带电粒子束的像差。在由偏转单元产生的光轴不对称的电磁场下补偿像差。

5. 发明申请

US20110068281A1 CHARGED PARTICLE BEAM DRAWING APPARATUS AND PROXIMITY EFFECT CORRECTION METHOD THEREOF 有权
标题翻译：充电粒子束绘图装置及其近似效应校正方法
公开(公告)号：US20110068281A1
公开(公告)日：2011-03-24
申请号：US12882713
申请日：2010-09-15
申请人： Shigehiro HARA , Shuichi Tamamushi , Takashi Kamikubo , Hitoshi Higurashi , Shinji Sakamoto , Yusuke Sakai , Yoshihiro Okamoto , Akihito Anpo
发明人： Shigehiro HARA , Shuichi Tamamushi , Takashi Kamikubo , Hitoshi Higurashi , Shinji Sakamoto , Yusuke Sakai , Yoshihiro Okamoto , Akihito Anpo
IPC分类号： G21K5/10 , G03F7/20
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J2237/31769 , H01J2237/31776
摘要： A charged particle beam drawing apparatus forms a map having meshes, forms representative figures, area of each representative figure in each mesh being equal to gross area of figures in each mesh, and calculates a proximity effect correction dose of the charged particle beam in each mesh on the basis of area of each representative figure in each mesh. If it is necessary to change the proximity effect correction dose of the charged particle beam for drawing at least one pattern corresponding to at least one figure, the charged particle beam drawing apparatus changes area of the at least one figure before the representative figures are formed by a representative figure forming portion, and changes the proximity effect correction dose of the charged particle beam for drawing the at least one pattern corresponding to the at least one figure, calculated by a proximity effect correction dose calculating portion.
摘要翻译：带电粒子束描绘装置形成具有网格的图，形成代表性图，每个网格中每个代表图的面积等于每个网格中的图形的总面积，并计算每个网格中的带电粒子束的邻近效应校正剂量在每个网格中每个代表人物的面积的基础上。如果需要改变带电粒子束的接近效应校正剂量以绘制与至少一个图形相对应的至少一个图案，则带电粒子束描绘装置在代表性图形形成之前改变至少一个图形的面积，代表图形形成部分，并且改变用于绘制由邻近效应校正剂量计算部分计算的与至少一个图形相对应的至少一个图案的带电粒子束的邻近效应校正剂量。

6. 发明授权

US08207514B2 Charged particle beam drawing apparatus and proximity effect correction method thereof 有权
标题翻译：带电粒子束绘图装置及其接近效应校正方法
公开(公告)号：US08207514B2
公开(公告)日：2012-06-26
申请号：US12882713
申请日：2010-09-15
申请人： Shigehiro Hara , Shuichi Tamamushi , Takashi Kamikubo , Hitoshi Higurashi , Shinji Sakamoto , Yusuke Sakai , Yoshihiro Okamoto , Akihito Anpo
发明人： Shigehiro Hara , Shuichi Tamamushi , Takashi Kamikubo , Hitoshi Higurashi , Shinji Sakamoto , Yusuke Sakai , Yoshihiro Okamoto , Akihito Anpo
IPC分类号： G21K5/10
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J2237/31769 , H01J2237/31776
摘要： A charged particle beam drawing apparatus forms a map having meshes, forms representative figures, area of each representative figure in each mesh being equal to gross area of figures in each mesh, and calculates a proximity effect correction dose of the charged particle beam in each mesh on the basis of area of each representative figure in each mesh. If it is necessary to change the proximity effect correction dose of the charged particle beam for drawing at least one pattern corresponding to at least one figure, the charged particle beam drawing apparatus changes area of the at least one figure before the representative figures are formed by a representative figure forming portion, and changes the proximity effect correction dose of the charged particle beam for drawing the at least one pattern corresponding to the at least one figure, calculated by a proximity effect correction dose calculating portion.
摘要翻译：带电粒子束描绘装置形成具有网格的图，形成代表性图，每个网格中每个代表图的面积等于每个网格中的图形的总面积，并计算每个网格中的带电粒子束的邻近效应校正剂量在每个网格中每个代表人物的面积的基础上。如果需要改变带电粒子束的接近效应校正剂量以绘制与至少一个图形相对应的至少一个图案，则带电粒子束描绘装置在代表性图形形成之前改变至少一个图形的面积，代表图形形成部分，并且改变用于绘制由邻近效应校正剂量计算部分计算的与至少一个图形相对应的至少一个图案的带电粒子束的邻近效应校正剂量。

7. 发明授权

US07485879B2 Electron beam writing apparatus and writing method 有权
标题翻译：电子束写入装置和写入方法
公开(公告)号：US07485879B2
公开(公告)日：2009-02-03
申请号：US11478744
申请日：2006-07-03
申请人： Hitoshi Sunaoshi , Shuichi Tamamushi
发明人： Hitoshi Sunaoshi , Shuichi Tamamushi
IPC分类号： G21K5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/31776
摘要： A writing apparatus including a selector unit responsive to receipt of input data of a pattern to be written by shots of irradiation of an electron beam, configured to select a current density of the electron beam being shot and a maximal shot size thereof based on the input data of the pattern to be written; and a writing unit configured to create an electron beam with the current density selected by said selector unit, shape the created electron beam into a shot size less than or equal to said maximal shot size in units of the shots, and shoot the shaped electron beam onto a workpiece to thereby write said pattern.
摘要翻译：一种写入装置，包括：选择器单元，响应于接收到要被写入的图形的输入数据的电子束的照射，被配置为基于所述输入来选择正在被拍摄的电子束的电流密度和最大镜头大小要写入的模式的数据; 以及写入单元，其被配置为产生具有由所述选择器单元选择的电流密度的电子束，将所创建的电子束形成为以所述拍摄为单位小于或等于所述最大投射尺寸的投射尺寸，并且拍摄成形电子束到工件上，从而写入所述图案。

8. 发明申请

US20080265174A1 CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD 审中-公开
标题翻译：充电颗粒光束书写装置和方法
公开(公告)号：US20080265174A1
公开(公告)日：2008-10-30
申请号：US12103321
申请日：2008-04-15
申请人： Makoto HIRAMOTO , Takashi Kamikubo , Shuichi Tamamushi
发明人： Makoto HIRAMOTO , Takashi Kamikubo , Shuichi Tamamushi
IPC分类号： H01J3/26
CPC分类号： H01J37/09 , B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3174 , H01J2237/0209 , H01J2237/3045 , H01J2237/30461
摘要： A charged particle beam writing apparatus includes an unit configured to irradiate a beam, a deflector configured to deflect the beam, a stage, on which a target is placed, configured to perform moving continuously, an lens configured to focus the beam onto the target, an unit configured to calculate a correction amount for correcting positional displacement of the beam on a surface of the target resulting from a first magnetic field caused by the lens and a second magnetic field caused by an eddy current generated by the first magnetic field and the moving of the stage, an unit configured to calculate a correction position where the positional displacement on the surface of the target has been corrected using the correction amount, and an unit configured to control the deflector so that the beam may be deflected onto the correction position.
摘要翻译：带电粒子束写入装置包括被配置为照射光束的单元，被配置为使光束偏转的偏转器，配置有目标的台阶，其被配置为连续地进行移动;配置成将光束聚焦到目标上的透镜，被配置为计算校正量，用于校正由由透镜引起的第一磁场产生的目标表面上的光束的位置偏移和由由第一磁场和移动的所产生的涡流引起的第二磁场所述单元被配置为使用所述校正量来计算已经校正了所述目标的表面上的位置偏移的校正位置，以及被配置为控制所述偏转器使得所述光束可能偏转到所述校正位置的单元。

9. 发明申请

US20080105827A1 SYSTEM AND METHOD FOR CHARGED-PARTICLE BEAM LITHOGRAPHY 有权
标题翻译：充电颗粒光栅的系统和方法
公开(公告)号：US20080105827A1
公开(公告)日：2008-05-08
申请号：US11933797
申请日：2007-11-01
申请人： Shuichi Tamamushi
发明人： Shuichi Tamamushi
IPC分类号： G21K1/08
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , Y10S430/143
摘要： A charged-particle beam lithography system is provided. A region to be patterned is divided into plural frames, a main deflection positions a beam to a subfield within the frame, and an auxiliary deflection draws a pattern in units of subfield. The deflection control portion draws a pattern in units of stripe including a first frame drawing region and a second frame drawing region. The first frame drawing region corresponds to one of the frames, and the second frame drawing region is a region moved by a distance C from the first frame drawing region toward a frame to be drawn next. The deflection control portion controls the driver to alternately pattern a first sub-field drawing region in the first frame drawing region and a second sub-field drawing region in the second frame drawing region. The distance C satisfies 0
摘要翻译：提供带电粒子束光刻系统。要被图案化的区域被分成多个框架，主偏转将光束定位在框架内的子场，并且辅助偏转以子场为单位绘制图案。偏转控制部分以包括第一框架绘制区域和第二框架绘制区域的条状单元绘制图案。第一框架图形区域对应于一个框架，第二框架绘制区域是从第一框架绘制区域移动距离C的区域朝向下一个要被绘制的框架。偏转控制部分控制驾驶员在第一框架绘制区域中交替地绘制第一子场绘制区域和第二帧画面区域中的第二子场绘制区域。距离C满足0

10. 发明申请

US20080067338A1 CHARGED PARTICLE BEAM LITHOGRAPHY SYSTEM AND METHOD FOR EVALUATING THE SAME 有权
标题翻译：充电粒子束光刻系统及其评估方法
公开(公告)号：US20080067338A1
公开(公告)日：2008-03-20
申请号：US11855613
申请日：2007-09-14
申请人： Rieko Nishimura , Shuichi Tamamushi
发明人： Rieko Nishimura , Shuichi Tamamushi
IPC分类号： G21K1/08 , G21K5/10
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/302 , H01J37/304 , H01J2237/3045 , H01J2237/30472
摘要： In the charged particle beam lithography system, a pattern area to be drawn is divided into a plurality of frames, a main deflection positions a charged particle beam to a subfield within the frame, and an auxiliary deflection draws a pattern in units of the subfield. The charged particle beam lithography system includes a beam optical system including a deflector deflecting the beam, a driver driving the deflector, and a deflection control, portion controlling the driver according to drawing data indicating a pattern to be drawn. The deflection control portion controls the driver according to a settling time that is determined so that an offset of an irradiation position of the charged particle beam has a certain value irrespective of any changes in deflection amount of the auxiliary deflection in the subfield.
摘要翻译：在带电粒子束光刻系统中，要绘制的图案区域被分成多个框架，主偏转将带电粒子束定位在框架内的子场，辅助偏转以子场为单位绘制图案。带电粒子束光刻系统包括光束光学系统，其包括偏转光束的偏转器，驱动偏转器的驱动器和偏转控制部分，根据指示要绘制的图案的图形数据控制驱动器。偏转控制部分根据确定为使得带电粒子束的照射位置的偏移具有一定值而不考虑子场中的辅助偏转的偏转量的变化的稳定时间来控制驾驶员。

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