会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Pressure-sensitive adhesive sheet, method of processing adherend with the pressure-sensitive adhesive sheet, and apparatus for stripping pressure-sensitive adhesive sheet
    • 压敏粘合片,用粘合片加工被粘物的方法,剥离压敏粘合片的装置
    • US08337656B2
    • 2012-12-25
    • US12736804
    • 2009-05-01
    • Akinori NishioKazuyuki Kiuchi
    • Akinori NishioKazuyuki Kiuchi
    • B32B38/10
    • C09J133/10C09J7/29C09J2433/00H01L21/6835H01L21/6836H01L2221/68327H01L2221/6834H01L2221/68381H01L2221/68386Y10T156/1142Y10T156/1158Y10T156/1917Y10T428/2495
    • To provide a pressure-sensitive adhesive sheet which protects a ground, thin, fragile adherend from “warping” and which can be removed from the fragile adherend after the completion of backgrinding without damaging and contaminating the fragile adherend. The pressure-sensitive adhesive sheet 5 includes a base layer A, a pressure-sensitive adhesive layer A, a base layer B, and a pressure-sensitive adhesive layer B arranged in this order, in which: the base layer A has a product of its Young's modulus at 25° C. and its thickness of 1.0×105 to 4.0×105 N/m and a product of its Young's modulus at 80° C. and its thickness of 2.8×105 N/m or less; the pressure-sensitive adhesive layer A has a shear modulus at 80° C. of 0.2 MPa or less; the base layer B has a product of its Young's modulus at 25° C. and its thickness of smaller than that of the base layer A and has, upon 80° C. heating, a shrink percentage in MD and a shrink percentage in TD of each 20% or more; and the pressure-sensitive adhesive layer B has a Young's modulus at 80° C. of 10 MPa or more and an adhesive strength to a silicon wafer (180-degree peel at a tensile speed of 300 mm/min) of 0.2 N/10 mm or less.
    • 提供一种保护地面,薄而易碎的被粘物翘曲的压敏粘合片,并且可以在完成背面研磨之后从脆弱的被粘物上除去,而不损坏和污染易碎的被粘物。 粘合片5包括依次布置的基底层A,压敏粘合剂层A,基底层B和粘合剂层B,其中:基底层A具有 在25℃下的杨氏模量,其厚度为1.0×10 5〜4.0×10 5 N / m,其杨氏模量为80℃,其厚度为2.8×10 5 N / m以下的乘积。 压敏粘合剂层A在80℃下的剪切模量为0.2MPa以下; 基层B的杨氏模量为25℃,其厚度小于基底层A的厚度,并且在80℃加热下,MD的收缩率和TD的收缩百分比 每个20%以上; 并且压敏粘合剂层B在80℃下的杨氏模量为10MPa以上,对硅晶片的粘合强度(拉伸速度为300mm / min的180度剥离)为0.2N / 10 mm以下。