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    • 1. 发明申请
    • THIN FILM SEMICONDUCTOR SUBSTRATE AND APPARATUS FOR MANUFACTURING THE SAME
    • 薄膜半导体基板及其制造方法
    • US20120025213A1
    • 2012-02-02
    • US12737543
    • 2009-03-27
    • Shigeyoshi OtsukiToshimasa EguchiMasatoshi NakaKazushige TakechiKiyoshi Ouchi
    • Shigeyoshi OtsukiToshimasa EguchiMasatoshi NakaKazushige TakechiKiyoshi Ouchi
    • H01L27/15B32B38/18
    • G02F1/133305G02F1/1362H01L27/1218
    • A flat panel display is manufactured by mass production and easily stored and transported at low cost. Provided is a thin film semiconductor substrate which faces a plastic substrate 7 and is combined with the plastic substrate 7 so as to be a flat panel display. Single-board-like insulating substrates 4 each of which has a thin film semiconductor array 3 are continuously bonded onto a lengthy plastic film 2. An apparatus is also provided for manufacturing the thin film semiconductor substrate which faces the plastic substrate 7 and is combined with the plastic substrate 7 so as to be the flat panel display. The apparatus includes a bonding section 20 for continuously bonding, onto the lengthy plastic film 2, the single-board-like insulating substrates 4 each of which has a protection film 5 bonded thereon for protecting the thin film semiconductor array 3, a peeling section 30 for peeling the protection film 5 by heating or ultraviolet irradiation, a laminating section 40 which laminates a lengthy protection film 6 on the lengthy plastic film 2 so as to protect the thin film semiconductor array 3, and a take-up section 50 for taking up, in a roll-shape, the lengthy plastic film 2, which has the lengthy protection film 6 laminated thereon.
    • 平板显示器通过批量生产制造,并且以低成本容易地储存和运输。 提供一种面向塑料基板7并与塑料基板7组合以便成为平板显示器的薄膜半导体基板。 具有薄膜半导体阵列3的单板状绝缘基板4连续地接合到长的塑料膜2上。还提供了一种用于制造面向塑料基板7并与塑料基板7组合的薄膜半导体基板的装置 塑料基板7,以便成为平板显示器。 该装置包括:接合部分20,用于在长的塑料膜2上连续地粘合单板状绝缘基板4,该单板状绝缘基板4具有粘合在其上的用于保护薄膜半导体阵列3的保护膜5,剥离部分30 为了通过加热或紫外线照射来剥离保护膜5,层压部分40,其在长的塑料膜2上层叠长的保护膜6以保护薄膜半导体阵列3,以及卷取部分50用于卷取 卷状的长的塑料薄膜2具有层叠在其上的长保护膜6。
    • 10. 发明授权
    • Thin-film transistor array, method of fabricating the same, and liquid crystal display device including the same
    • 薄膜晶体管阵列,其制造方法和包括该薄膜晶体管阵列的液晶显示装置
    • US07804091B2
    • 2010-09-28
    • US11890677
    • 2007-08-07
    • Kazushige TakechiMitsuru Nakata
    • Kazushige TakechiMitsuru Nakata
    • H01L31/00
    • H01L27/124H01L27/1225H01L27/1288H01L29/78618H01L29/7869
    • A thin-film transistor array includes an electrically insulating substrate, a plurality of thin-film transistors arranged in a matrix on the substrate, and each including a channel, a source, and a drain each comprised of an oxide-semiconductor film, a pixel electrode integrally formed with the drain, a source signal line through which a source signal is transmitted to a group of thin-film transistors, a gate signal line through which a gate signal is transmitted to a group of thin-film transistors, a source terminal formed at an end of the source signal line, and a gate terminal formed at an end of the gate signal line. The source terminal and the gate terminal are formed in the same layer as a layer in which the channel is formed. The source terminal and the gate terminal have the same electric conductivity as that of the pixel electrode.
    • 薄膜晶体管阵列包括电绝缘基板,在基板上以矩阵形式布置的多个薄膜晶体管,每个薄膜晶体管包括沟道,源极和漏极,每个沟道,源极和漏极由氧化物半导体膜,像素 与漏极整体形成的电极,将源极信号通过​​该源极信号传输到一组薄膜晶体管的源极信号线,栅极信号线,栅极信号通过​​该栅极信号线传输到一组薄膜晶体管,源极端子 形成在源极信号线的端部,以及栅极端子,形成在栅极信号线的一端。 源极端子和栅极端子形成在与形成沟道的层相同的层中。 源极端子和栅极端子具有与像素电极相同的导电性。