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1. 发明授权

US5441848A Optical recording/reproducing method 失效
标题翻译：光记录/再现方法
公开(公告)号：US5441848A
公开(公告)日：1995-08-15
申请号：US226358
申请日：1994-04-12
申请人： Toshiki Aoi , Atsuko Motai , Akio Ogawa
发明人： Toshiki Aoi , Atsuko Motai , Akio Ogawa
IPC分类号： G11B7/00 , G11B7/0045 , G11B7/125 , G11B7/24 , G11B7/247 , G11B7/249
CPC分类号： G11B7/2495 , G11B7/00451 , G11B7/00452 , G11B7/246 , G11B7/2472 , G11B2007/24612 , G11B7/2467 , G11B7/248 , G11B7/2533 , G11B7/2534 , G11B7/2542 , G11B7/2595 , Y10S430/146
摘要： In an optical recording medium comprising an organic dye base recording layer and a reflective layer on a resin substrate having a groove of 1,100 to 2,300 .ANG. deep formed in one surface thereof, signals are written by directing recording light to the recording layer within the groove from the back side of the substrate at a relative linear velocity of at least 3.6 m/s whereby record marks are formed in the recording layer as a result of partial decomposition of the dye while deforming the groove bottom surface. The deformation of the groove bottom surface is minimized to less than 18% of the groove depth. The medium requires a short time for recording and offers reduced jitter on reproduction.
摘要翻译：在包括有机染料基底记录层和反射层的光学记录介质中，在其一个表面上形成有深度为1,100至2300的凹槽的树脂基板上，通过将记录光指向凹槽内的记录层来写入信号基板的背面以至少3.6m / s的相对线速度，由此在使凹槽底面变形的同时使染料部分分解而在记录层中形成记录标记。凹槽底面的变形最小化到小于凹槽深度的18％。该介质需要很短的时间进行记录，并且在再现时提供减少的抖动。

2. 发明授权

US5419939A Optical recording disk 失效
标题翻译：光盘录像机
公开(公告)号：US5419939A
公开(公告)日：1995-05-30
申请号：US124036
申请日：1993-09-21
申请人： Hiroyuki Arioka , Toshiki Aoi , Akio Ogawa , Hideki Dohi
发明人： Hiroyuki Arioka , Toshiki Aoi , Akio Ogawa , Hideki Dohi
IPC分类号： G11B7/24 , G11B7/246 , G11B7/2467 , G11B7/2472 , G11B7/2495 , G11B7/2531 , G11B7/2533 , G11B7/2534 , G11B7/2542 , G11B7/257 , G11B7/2578 , G11B7/259 , B32B3/00
CPC分类号： G11B7/246 , G11B7/24 , G11B7/2578 , G11B7/259 , G11B2007/24612 , G11B2007/25706 , G11B2007/25713 , G11B2007/25715 , G11B2007/25716 , G11B7/2467 , G11B7/2472 , G11B7/248 , G11B7/2495 , G11B7/2531 , G11B7/2533 , G11B7/2534 , G11B7/2542 , Y10S428/913 , Y10S430/146 , Y10T428/31678
摘要： An optical recording disk includes a dye base recording layer, an intermediate layer, and a reflective layer on a substrate in the described order. The reflective layer is composed of one or more metal elements, for example, copper alloy, and the intermediate layer contains a compound of the one metal element or a compound of at least one of the metal elements, for example copper oxide. The intermediate layer minimizes undesirable interactions between the recording and reflective layers.
摘要翻译：光记录盘在上述顺序包括基片上的染料基底记录层，中间层和反射层。反射层由一种或多种金属元素，例如铜合金构成，中间层含有一种金属元素的化合物或至少一种金属元素的化合物，例如氧化铜。中间层使记录层和反射层之间的不期望的相互作用最小化。

3. 发明授权

US08436351B2 ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device 有权
标题翻译：含ZnO半导体层和含ZnO半导体发光器件
公开(公告)号：US08436351B2
公开(公告)日：2013-05-07
申请号：US12969304
申请日：2010-12-15
申请人： Tomofumi Yamamuro , Michihiro Sano , Naochika Horio , Hiroyuki Kato , Akio Ogawa , Hiroshi Kotani
发明人： Tomofumi Yamamuro , Michihiro Sano , Naochika Horio , Hiroyuki Kato , Akio Ogawa , Hiroshi Kotani
IPC分类号： H01L33/28
CPC分类号： H01L33/285
摘要： A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.
摘要翻译：含ZnO的半导体层含有添加到ZnO中的Se，并且具有紫外光的发射峰值波长和视觉光的发射峰值波长。通过将含ZnO的半导体层与被发射的紫外线激发的荧光体或半导体结合并发射视觉光，可以发出各种波长的视觉光。

4. 发明授权

US07824608B2 Method for dewatering endoscope channels 有权
标题翻译：内窥镜通道脱水方法
公开(公告)号：US07824608B2
公开(公告)日：2010-11-02
申请号：US11701846
申请日：2007-02-02
申请人： Hisashi Kuroshima , Akio Ogawa , Kojiro Kotani , Takayoshi Iwanami , Hideto Onishi
发明人： Hisashi Kuroshima , Akio Ogawa , Kojiro Kotani , Takayoshi Iwanami , Hideto Onishi
IPC分类号： A61L2/18
CPC分类号： A61B1/123 , A61B1/015 , A61B1/125 , A61B90/70 , A61B2090/701 , A61L2/18 , A61L2/24 , A61L2202/17 , A61L2202/24
摘要： An apparatus washes/disinfects, at a time, a plurality of endoscopes having a plurality of channels with different diameters, and dewaters the channels at a time. For the dewatering, the apparatus includes plural ports for receiving air supply, and a plurality of tubes for connecting between each of the plurality of ports and each of the plurality of channels in each of the plurality of endoscopes. The apparatus also includes an on-off valve for intermittently supply air to the ports, and a control unit for opening/closing the valve a plurality of times at a predetermined ratio. Water droplets remaining in a large-diameter channel are mainly moved by wind pressure of continuously flowing air while the valve is open, and discharged. Water droplets in a smaller-diameter channel are mainly moved by hammer effect of high-pressure air caused while the valve is closed, and discharged. The valve opening/closing is repeated for complete dewatering.
摘要翻译：一次装置一次洗涤/消毒多个具有不同直径的通道的内窥镜，并一次对通道进行脱水。为了脱水，该装置包括用于接收空气供应的多个端口和用于在多个端口中的每一个和多个内窥镜中的每一个中的多个通道中的每一个连接的多个管。该装置还包括用于向端口间歇地供给空气的开关阀和用于以预定比率多次打开/关闭阀的控制单元。留在大直径通道中的水滴主要是通过持续流动的空气的风压在阀门打开时移动并排出。较小直径通道中的水滴主要是通过在阀门关闭时引起的高压空气的锤击作用而移动，并排出。阀门打开/关闭重复进行完全脱水。

5. 发明申请

US20090284857A1 METHOD AND APPARATUS FOR TESTING CHARACTERISTICS OF THIN-FILM MAGNETIC HEAD 有权
标题翻译：薄膜磁头测试特性的方法与装置
公开(公告)号：US20090284857A1
公开(公告)日：2009-11-19
申请号：US12467335
申请日：2009-05-18
申请人： Akio Ogawa , Tsutomu Chikamatsu , Kazuyuki Kobayashi , Haruhiko Yamaguchi , Kazunori Matsuiwa , Masaki Ohashi , Kazuyoshi Nakajima , Kiyotaka Shindo
发明人： Akio Ogawa , Tsutomu Chikamatsu , Kazuyuki Kobayashi , Haruhiko Yamaguchi , Kazunori Matsuiwa , Masaki Ohashi , Kazuyoshi Nakajima , Kiyotaka Shindo
IPC分类号： G11B27/36
CPC分类号： G11B5/455
摘要： The characteristics of thin-film magnetic heads are evaluated by measuring, in a step and repeat method and apparatus, the magnetic field generated by the respective heads in a bar including multiple heads.
摘要翻译：通过在步骤和重复方法和装置中测量由包括多个头的棒中的各个头产生的磁场来评估薄膜磁头的特性。

6. 发明申请

US20070134842A1 Manufacture method for ZnO based semiconductor crystal and light emitting device using same 审中-公开
标题翻译：基于ZnO的半导体晶体的制造方法和使用它的发光器件
公开(公告)号：US20070134842A1
公开(公告)日：2007-06-14
申请号：US11589998
申请日：2006-10-31
申请人： Hiroshi Kotani , Michihiro Sano , Hiroyuki Kato , Akio Ogawa
发明人： Hiroshi Kotani , Michihiro Sano , Hiroyuki Kato , Akio Ogawa
IPC分类号： H01L21/16 , H01L21/00
CPC分类号： H01L21/02576 , H01L21/0237 , H01L21/02403 , H01L21/02433 , H01L21/02472 , H01L21/02554 , H01L21/02565 , H01L21/02579 , H01L21/02631 , H01L33/0083
摘要： A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity plane of said substrate to grow ZnO based semiconductor crystal on the Zn polarity plane of said substrate in a Zn rich condition. (a) An n-type ZnO buffer layer is formed on a Zn polarity plane of a substrate. (b) An n-type ZnO layer is formed on the surface of the n-type ZnO buffer layer. (c) An n-type ZnMgO layer is formed on the surface of the n-type ZnO layer. (d) A ZnO/ZnMgO quantum well layer is formed on the surface of the n-type ZnMgO layer, by alternately laminating a ZnO layer and a ZnMgO layer. @(e) A p-type ZnMgO layer is formed on the surface of the ZnO/ZnMgO quantum well layer. (f) A p-type ZnO layer is formed on the surface of the p-type ZnMgO layer. @(g) An electrode is formed on the n-type ZnO layer and p-type ZnO layer. The n-type ZnO layer is formed under a Zn rich condition at the step (b).
摘要翻译：一种氧化锌（ZnO）系半导体晶体的制造方法，其特征在于，提供具有Zn极性面的基板，并且在所述衬底的Zn极性平面上使至少锌（Zn）和氧（O）反应，以在富锌条件下在所述衬底的Zn极性平面上生长ZnO基半导体晶体。（a）在基板的Zn极性平面上形成n型ZnO缓冲层。（b）在n型ZnO缓冲层的表面上形成n型ZnO层。（c）在n型ZnO层的表面上形成n型ZnMgO层。（d）通过交替层叠ZnO层和ZnMgO层，在n型ZnMgO层的表面上形成ZnO / ZnMgO量子阱层。 @（e）p型ZnMgO层形成在ZnO / ZnMgO量子阱层的表面上。（f）在p型ZnMgO层的表面上形成p型ZnO层。 @（g）在n型ZnO层和p型ZnO层上形成电极。在步骤（b），在富锌条件下形成n型ZnO层。

7. 发明申请

US20070034144A1 OXIDE CRYSTAL GROWTH APPARATUS AND FABRICATION METHOD USING THE SAME 审中-公开
标题翻译：氧化物晶体生长装置和使用该方法的制造方法
公开(公告)号：US20070034144A1
公开(公告)日：2007-02-15
申请号：US11463369
申请日：2006-08-09
申请人： Akio Ogawa , Michihiro Sano , Hiroyuki Kato , Hiroshi Kotani
发明人： Akio Ogawa , Michihiro Sano , Hiroyuki Kato , Hiroshi Kotani
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/16 , C30B23/005 , C30B23/02
摘要： A growth apparatus and a method for making a nitrogen (N)-doped oxide crystal grow can be configured to set a nitrogen concentration to a desired concentration and to make the concentration of nitrogen uniform in a depth direction. A nitrogen source gun configured to supply ammonia (NH3) gas into an ultrahigh vacuum chamber can be arranged on a side of an ultrahigh vacuum chamber that is approximately opposite to a side that includes an exhaust port. A stage can be located between the nitrogen source gun and the exhaust port so as to form a flow path for ammonia that allows ammonia introduced into the ultrahigh vacuum chamber to be quickly exhausted after reaching a ZnO substrate placed on the stage. As a result, accumulation of ammonia in the ultrahigh vacuum chamber can be minimized, so that the nitrogen concentration in a crystal growth layer on the ZnO substrate can be set at a desired concentration and can be made uniform in the depth direction.
摘要翻译：可以将生长装置和氮（N）掺杂氧化物晶体生长的方法构成为将氮浓度设定为所需浓度，并使氮浓度在深度方向上均匀。配置成将氮（NH 3）气体供应到超高真空室中的氮源枪可以布置在与包括排气口的一侧大致相反的超高真空室的一侧。阶段可以位于氮源枪和排气口之间，以便形成氨的流动通道，允许在达到放置在载物台上的ZnO衬底之后，引入超高真空室的氨被快速排出。结果，可以使超高真空室中的氨的积累最小化，使得ZnO基板上的晶体生长层中的氮浓度可以设定为期望的浓度并且可以在深度方向上均匀。

8. 发明授权

US06991513B2 Magnetic head grinding device and method 有权
标题翻译：磁头研磨装置及方法
公开(公告)号：US06991513B2
公开(公告)日：2006-01-31
申请号：US10311207
申请日：2001-06-15
申请人： Kazushige Tohta , Hiroshi Shindo , Akio Ogawa , Osamu Fukuroi , Takashi Fujii
发明人： Kazushige Tohta , Hiroshi Shindo , Akio Ogawa , Osamu Fukuroi , Takashi Fujii
IPC分类号： B24B49/00
CPC分类号： B24B37/048 , B24B19/26 , B24B37/00 , B24B41/061 , G11B5/1871 , G11B5/3116 , G11B5/3163
摘要： The present invention relates to a lapping apparatus and a lapping method that may effect further machining in response to each element on a ceramic bar to the ceramic bar that is largely locally lapped and may reduce a cost needed for machining without any jig for holding the ceramic bar. The ceramic bar is held by a surface of an elastic member made of rubber or the like. A plurality of actuators are arranged on a back surface of this elastic member. When the ceramic bar is depressed against the lapping surface, a specific portion of the ceramic bar is deformed or strongly deformed through the elastic member by these actuators to thereby make it possible to perform the lapping in response to each element.
摘要翻译：研磨装置和研磨方法本发明涉及一种研磨装置和研磨方法，其可以响应于陶瓷棒上的每个元件对陶瓷棒进行进一步加工，所述陶瓷棒在很大程度上局部重叠，并且可以降低加工所需的成本，而不需要用于保持陶瓷的任何夹具酒吧。陶瓷棒由橡胶等制成的弹性部件的表面保持。多个致动器布置在该弹性构件的后表面上。当陶瓷条被压靠在研磨表面上时，通过这些致动器，陶瓷棒的特定部分通过弹性构件变形或强烈变形，从而可以响应于每个元件进行研磨。

9. 发明申请

US20110084275A1 ZnO-CONTAINING SEMICONDUCTOR LAYER AND ZnO-CONTAINING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：含ZnO的半导体层和含ZnO的半导体发光器件
公开(公告)号：US20110084275A1
公开(公告)日：2011-04-14
申请号：US12969304
申请日：2010-12-15
申请人： Tomofumi Yamamuro , Michihiro Sano , Naochika Horio , Hiroyuki Kato , Akio Ogawa , Hiroshi Kotani
发明人： Tomofumi Yamamuro , Michihiro Sano , Naochika Horio , Hiroyuki Kato , Akio Ogawa , Hiroshi Kotani
IPC分类号： H01L33/28
CPC分类号： H01L33/285
摘要： A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.
摘要翻译：含ZnO的半导体层含有添加到ZnO中的Se，并且具有紫外光的发射峰值波长和视觉光的发射峰值波长。通过将含ZnO的半导体层与被发射的紫外线激发的荧光体或半导体结合并发射视觉光，可以发出各种波长的视觉光。

10. 发明申请

US20090061559A1 MANUFACTURE METHOD FOR ZnO-CONTAINING COMPOUND SEMICONDUCTOR LAYER 有权
标题翻译：含ZnO复合半导体层的制造方法
公开(公告)号：US20090061559A1
公开(公告)日：2009-03-05
申请号：US12194791
申请日：2008-08-20
申请人： Tomofumi YAMAMURO , Michihiro Sano , Hiroyuki Kato , Akio Ogawa
发明人： Tomofumi YAMAMURO , Michihiro Sano , Hiroyuki Kato , Akio Ogawa
IPC分类号： H01L21/16
CPC分类号： H01L21/0237 , H01L21/02403 , H01L21/02472 , H01L21/02483 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02661
摘要： A manufacture method for a ZnO-containing compound semiconductor layer has the steps of: (a) preparing a substrate; and (b) growing a ZnO-containing semiconductor layer above the substrate by supplying at the same time at least Zn and O as source gases and S as surfactant. There is provided the manufacture method for the ZnO-containing compound semiconductor layer with improved flatness.
摘要翻译：含ZnO化合物半导体层的制造方法具有以下步骤：（a）制备基板; 和（b）通过同时供给作为源气体的至少Zn和O以及S作为表面活性剂，在衬底上生长含ZnO的半导体层。提供了具有改善的平坦度的含ZnO化合物半导体层的制造方法。

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